• 제목/요약/키워드: Emitter orientation

검색결과 4건 처리시간 0.017초

Simulation Study on the Effect of the Emitter Orientation and Photonic Crystals on the Outcoupling Efficiency of Organic Light-Emitting Diodes

  • Lee, Ju Seob;Ko, Jae-Hyeon;Park, Jaehoon;Lee, Jong Wan
    • Journal of the Optical Society of Korea
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    • 제18권6호
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    • pp.732-738
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    • 2014
  • Combined optical simulation of the ray-tracing technique and the finite difference time domain method was used to investigate the effect of the emitter orientation and the photonic crystal layer on the outcoupling efficiency (OCE) of bottom-emission type organic light emitting diodes (OLEDs). The OLED with a horizontal emitter exhibited an opposite interference effect to that of one with a vertical emitter, which suggested that the OCE would be very sensitive to the emitter orientation at a fixed emitter-cathode distance. The OLED with a horizontal emitter exhibited much larger OCE than that with a vertical emitter did, which was due to the substantial difference in the radiation pattern along with the different coupling with the surface plasmon excitation. The OCE with a horizontal emitter was increased by approximately 1.3 times by inserting a photonic crystal layer between the indium tin oxide layer and the glass substrate. The present study suggested that appropriate control of the emitter orientation and its combination to other outcoupling structures could be used to enhance the OCE of OLEDs substantially.

쌍극자 광원의 진동방향, Mie 산란자, 그리고 Pillow 렌즈가 OLED의 광추출효율에 미치는 영향에 대한 시뮬레이션 연구 (Simulation of the Combined Effects of Dipole Emitter Orientation, Mie Scatterers, and Pillow Lenses on the Outcoupling Efficiency of an OLED)

  • 이주섭;이종완;박재훈;고재현
    • 한국광학회지
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    • 제25권4호
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    • pp.193-199
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    • 2014
  • 본 연구에서는 FDTD와 광선추적기법을 결합한 시뮬레이션을 활용해 광원으로 설정된 쌍극자의 진동 방향, 유리기판에 적용된 Mie 산란입자와 Pillow 렌즈가 광결정 구조가 포함된 OLED의 광추출효율에 미치는 영향을 조사하였다. 쌍극자 광원의 진동방향이 OLED 표면에 대해 수평인 경우, 광결정구조만 적용된 OLED의 효율이 54%인데 반해 최적화된 조건의 Mie 산란입자, Pillow 렌즈가 적용된 OLED는 약 86%의 광추출효율을 나타냈다. 아울러 광결정 구조로 인해 특정 각도로 광도가 증가하는 문제점이 Mie 산란입자의 산란효과로 인해 완화될 수 있음을 알았다. 본 연구는 광추출효율을 향상시키는 다양한 광학구조를 적용함과 더불어 발광체 유기분자의 배향을 조절함으로써 OLED의 효율을 큰 폭으로 향상시킬 수 있음을 보여준다.

Considerations for Design and Implementation of a RF Emitter Localization System with Array Antennas

  • Lim, Deok Won;Lim, Soon;Chun, Sebum;Heo, Moon Beom
    • Journal of Positioning, Navigation, and Timing
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    • 제5권1호
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    • pp.37-45
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    • 2016
  • In this paper, design and implementation issues for a network-oriented RF emitter localization system with array antenna are discussed. For hardware, the problem of array mismatch and RF/IF channel mismatch are introduced and the calibration schemes for solving those problems are also provided. For software, it is explained how to overcome the drawback of conventional MUltiple Signal Identification and Classification (MUSIC) algorithm in a point of identifying the number of received signals and problems such as Data Association Problem and Ghost Node Problem in regard to multiple emitter localization are presented with some approaches for getting around those problems. Finally, for implementation, a criterion for arranging each of sensors and a requirement for alignment of array antenna' orientation are also given.

The study of silicon etching using the high density hollow cathode plasma system

  • Yoo, Jin-Soo;Lee, Jun-Hoi;Gangopadhyay, U.;Kim, Kyung-Hae;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.1038-1041
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    • 2003
  • In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

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