• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.539-542
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• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.51-56
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• 2019

LuAG:Ce(Lu₃Al₅O₁₂:Ce³⁺) nano phosphor were synthesized by applying the coprecipitation method. It is used to increase the color rendering of phosphor ceramic plate for high power LEDs and laser lighting. Internal quantum efficiency and absorption of LuAG:Ce nano phosphor are 51.5 % and 64.4 %, respectively, which is higher than the previously studied nano phosphors. The maximum absorption wavelength of this phosphor is 450 nm blue light, and the emission wavelength is 510 nm. The emission wavelength shifted to longer wavelength when the concentration of Ce increased in the heat treatment of the reducing atmosphere. Thermal quenching of LuAG nano phosphor was 70 % at 200 ℃, it was explained by their significant quenching of all raman scattering modes, implying the restriction of electron-phonon couplings caused by their defects.

• 한국진공학회지
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• 제21권3호
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• pp.164-170
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• 2012

청색 발광다이오드(LED) InGaN/GaN의 방사 피크 파장에 따른 LED 소자의 성능 저하를 광학적 및 전기적 특성을 고려하여 조사하였다. 방사 피크 파장이 437~452 nm인 LED 소자에 전류를 각각 60 mA, 75 mA, 그리고 90 mA로 구동하여 장시간 동안 스트레스를 주었다. 형광체의 유무에 따라서 LED 소자의 광 감쇠 특성을 관측하였다. 형광체가 없는 소자의 광 감쇠 특성은 피크 파장이 단파장일수록 급속하게 떨어진다. 형광체가 있는 소자는 형광체가 없는 것보다 감쇠 특성이 둔감해진다. 전기적 특성은 방사 피크 파장에 의존하지 않고, 스트레스 시간에 따른 LED의 내부 저항이 서서히 증가하는 현상으로 나타난다. 피크 파장에 따른 외형변화는 동일 전류 조건에서 단파장일 때 열화현상이 심하게 발생한다. 이는 청색 발광다이오드에서 발생한 빛의 파장이 단파장영역으로 갈수록 칩 외의 재료에서 단파장 광 흡수가 증가하여 열화현상이 가속화되는 것으로 분석된다. 따라서 LED 소자의 장수명을 얻기 위해서는 청색 칩의 방사 피크 파장과 소자재료의 광 열화해석이 중요하다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.57-58
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• 2008

We have studied an organic layer and semitransparent Al electrode thickness dependent optical properties and microcavity effects for top-emission organic light-emitting diodes. Manufactured top-emission device structure is Al(100nm)/TPD(xnm)/Alq(ynm)/LiF(0.5nm)/Al(25nm). While a thickness of total organic layer was varied from 85nm to 165n, a ratio of those two layers was kept to be about 2:3. Semitransparent Al cathode was varied from 20nm to 30nm for the device with an organic layer total thickness of 140nm. As the thickness of total organic layer increases, the emission spectra show a shift of peak wavelength from 490nm to 580nm, and the full width at half maxima from 90nm to 35nm. The emission spectra show a blue shift as the view angle increases. Emission spectra depending on a transmittance of semitransparent cathode show a shift of peak wavelength from 515nm to 593nm. At this time, the full width at half maximum was about to be a constant of 50nm. With this kind of microcavity effect, we were able to control the emission spectra from the top-emission organic light-emitting diodes.

• Transactions on Electrical and Electronic Materials
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• 제10권1호
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• pp.28-30
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• 2009

We have studied organic layer-thickness dependent electrical and optical properties of bottom- and top-emission devices. Bottom-emission device was made in a structure of ITO(170 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(100 nm), and a top-emission device in a structure of glass/Al(100 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(25 nm). A hole-transport layer of TPD (N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine) was thermally deposited in a range of 35 nm and 65 nm, and an emissive layer of $Alq_3$ (tris-(8-hydroxyquinoline) aluminum) was successively deposited in a range of 50 nm and 100 nm. Thickness ratio between the hole-transport layer and the emissive layer was maintained to be 2:3, and a whole layer thickness was made to be in a range of 85 and 165 nm. From the current density-luminance-voltage characteristics of the bottom-emission devices, a proper thickness of the organic layer (55 nm thick TPD and 85 nm thick $Alq_3$ layer) was able to be determined. From the view-angle dependent emission spectrum of the bottom-emission device, the peak wavelength of the spectrum does not shift as the view angle increases. However, for the top-emission device, there is a blue shift in peak wavelength as the view angle increases when the total layer thickness is thicker than 140 nm. This blue shift is thought to be due to a microcavity effect in organic light-emitting diodes.

• 상하수도학회지
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• 제23권1호
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• pp.69-75
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• 2009

The characteristics of disinfection and organic removal were investigated with pulse UV lamp in this study. The intensity and emission wavelength of pulse UV Lamp were compared with low pressure UV lamp. The emission spectrum range of pulse UV lamp was between 200 and 400 nm while the emission spectrum of low pressure UV lamp was only single wavelength of 254nm. 3 Log inactivation rate of B. subtilis spore by pulse UV and low pressure UV irradiation was determined as $44.71mJ/cm^2$ and $57.7mJ/cm^2$, respectively. This results implied that wide range of emission spectrum is more effective compared to single wavelength emission at 254nm. 500ng/L of initial 2-MIB concentration was investigated on the removal efficiency by UV only and $UV/H_2O_2$ process. The removal efficiency of UV only process achieved approximately 80% at $8,600mJ/cm^2$ dose. 2-MIB removal rate of $UV/H_2O_2$ (5 mg/L $H_2O_2$) process was 25 times increased compared to UV only process. DOC removal efficiency for the water treatment plant effluent was examined. The removal efficiency of DOC by UV and $UV/H_2O_2$ was no more than 20%. Removal efficiency of THMFP(Trihalomethane Formation Potential), one of the chlorination disinfection by-products, is determined on the UV irradiation and $UV/H_2O_2$ process. Maximum removal efficiency of THMFP was approximately 23%. This result indicates that more stable chemical structures of NOM(Natural Organic Matter) than low molecule compounds such as 2-MIB, hydrogen peroxide and other pollutants affect low removal efficiency for UV photolysis. Consequently, pulse UV lamp is more efficient compared to low pressure lamp in terms of disinfection due to it's broad wavelength emission of UV. Additional effect of pulse UV is to take place the reactions of both direct photolysis to remove micro organics and disinfection simultaneously. It is also expected that hydrogen peroxide enable to enhance the oxidation efficiency on the pulse UV irradiation due to formation of OH radical.

• Bulletin of the Korean Chemical Society
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• 제29권7호
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• pp.1353-1358
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• 2008

Benzyl arylether dendrimers with zinc porphyrin core and terminal vinyl groups have been synthesized and their photophysical properties and the influence of dendritic environments were investigated. Free base porphyrin-cored benzyl arylether dendrimers 1a-1c and 3a-3c, and their zinc derivatives 2a-2c and 4a-4c have been prepared. Absorption spectra are similar for all porphyrin-cored benzyl arylether dendrimers, except that absorption intensity at 280 nm increases in the higher generation of dendrimer. Fluorescence spectra are similar with two bands for all free base porphyrin dendrimers 1a-1c and 3a-3c, although fluorescence intensity ratio of shorter wavelength emission band to longer wavelength band varies with the generation of dendrimer. Emission efficiencies of 1a-1c and 3a-3c are lower than that of TTP. Emission efficiencies of 2a-2c and 4a-4c are higher than that of ZnTTP. Absorption and emission properties of 1a-1c, 2a-2c, 3a-3c, and 4a-4c were affected negligibly with dendritic environments.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.465-465
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• 2008

Conjugated polymers have attracted much scientific and technological research interest during the past few decades because of their potential use such as polymer light-emitting diodes (PLEDs).1,2 Particularly, lots of phenylene-based polymers such as polyfluorene and its derivatives have been synthesized because of their high photoluminescence quantum efficiencies and thermal stabilities. However, troublesome long wavelength emission in polymer film of polyfluorenes on heating during device formation or operation has been the crucial problem for practical applications. The source of the long wavelength emission was initially believed to be solely due to excimer emission as a result of polymer aggregation. It has also recently been correlated with emissions from ketonic defects in the fluorene units. Many efforts have been made to reduce the tendency to red-shifted emission. Here, we report for the first time the design and synthesis of novel 9,9-spiro bifluornene-based polymers containing heteroatoms such as N, S in its molecular skeleton. Especially, the 9,9-spiro bifluornene-based polymers containing N atom showed stable blue electroluminescence, which did not show spectral change upon thermal annealing.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.429-434
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• 2002

In this paper, multiheterostructure white organic light-emitting device was fabricated by vacuum evaporation. The structure of white organic light-emitting device is ITO/CuPc/TPD/DPBi:DPA/$Alq_3/Alq_3$:DCJTB/BCT/$Alq_3$/Ca/Al. Three primary colors are implemented with DPVBi, Alq$_3$and DCJTB. The maximum EL wavelength of the fabricated white organic light-emitting device is 647nm. And the CIE coordinate is (0.33, 0.33) at 13 V. In the fabrication of white organic light-emitting devices with DCJTB, $Alq_3$, DPVBi, the EL spectrum has two peaks at 492nm, 647nm. Two peaks appeared because the blue light is combined with green light. The maximum wavelength of red light is not changed with applied voltage. After voltage applied, for the first time, the electrons met the holes in the red emission layer and emitted red light. And then the electrons moved to the green emission layer, and blue emission layer continuously. Finally, when all of the emission layer activated, the white light is emitted.

• Bulletin of the Korean Chemical Society
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• 제21권8호
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• pp.769-773
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• 2000

The dependence of photoluminescence (PL) and photoluminescence itation (PLE) on preparation condi-tions and the aging of porous silicon carbide (PSC) have been investigatted. The fiber size of the material pre-pared under dark-current mode, labele d DCM, was larger than that of the photoassisted (PA)process.The intensity of the PL spectrum for the PA condition was higher than that of the DCM condition. The PA condition giving small fiber size exhibited amore prominent high-energy component but the emission bands of both con-ditionsobserved were rather similar. The origin of the PL may have played an importantrole in the surface defect center introduced by the reaction conditions ofHFatthe surface of the silicon carbide. Selective excita-tion of the PL bandsusingdifferent excitation wavelengths has been used to identify distinct componentswith-in the PL bandwidth. Two main PL bands with peak wavelength of494 and534 nm were clearly resolved. On the other hand, selectivc emission of the PLEbands using different emission wavelengths has been used to identify distinct components within the PLE bandwidth. The higher energy band with peak wavelength of 338 nm and the lower energy bands involving 390,451 and 500 nm were clearly resolved. According to the pro-ionged aging in air, PL spectra appearedasone band, This emission probably originated from states localized to the band-to-band recombination due to the oxidation on the crystallite surface.