• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.127-132
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• 2009

We have investigated the intrinsic defects remaining in epitaxial GaSb layers grown on SI-GaAs substrates compared to those in bulk GaSb crystal substrate, which is a basic material of Sb-based strained-layer superlattice infrared photodetectors. From the functional dependence of the band-to-band transition energy of the photomuminescence (PL) spectra observing up to near room-temperature (250 K), the temperature parameters of [$E_o$, $\alpha$, $\beta$] of undoped GaSb crystal are determined by using the Varshni empirical equation describing the temperature variation of the bandgap energy. Additionally to the antisite-Ga ([$Ga_{Sb}$]) with an ionization energy of 29 meV that is well known to a major intrinsic defect in GaSb, epitaxial GaSb layers show a pair of deep states at the emission energy of 732/711 meV that may be related with a complex of two antisite-Ga and antisite-Sb ([$Ga_{Sb}-Sb_{Ga}$]). Based on the analysis of the temperature and the excitation-power dependences of PL, it suggests that excess-Sb substitutes Ga-site by self-diffusion and two anti sites of [$Ga_{Sb}$] and [$Sb_{Ga}$] could form as a complex of [$Ga_{Sb}-Sb_{Ga}$] in GaSb epilayers grown under Sb-rich condition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.2
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• pp.71-77
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• 2001

We investigated photoluminescence, long-phosphorescent and crystalline properties with various $Dy_2$$O_3$ compositions (0.0~9.5mol%) in $SrAl_2$$O_4$ : $Eu^{2+}$,$Dy^{3+}$ phosphor powders prepared by the solid state reaction. The highest emission wavelength (520nm) of photoluminescence spectra was not affected by the Dy doping concentrations. The$SrAl_2$$O_4$single phase which was determined by X-ray diffraction and photoluminescence was appeared for the concentrations of $Dy_2$$O_3$$\leq$1.0 mol%. After removal of the pulsed Xe-lamp excitation (360nm), also, excellent long phosphorescent properties of the phosphors were obtained with the concentrations of $Dy_2$$O_3$$\leq$1.0mol%, although the decay time for all phosphors decrease exponentially.

• Journal of The Korean Astronomical Society
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• v.49 no.6
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• pp.261-288
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• 2016

We present the results of simultaneous monitoring observations of $H_2O$ $6_{1,6}-5_{2,3}$ (22GHz) and SiO J=1-0, 2-1, 3-2 maser lines (43, 86, 129GHz) toward five post-AGB (candidate) stars, using the 21-m single-dish telescopes of the Korean VLBI Network. Depending on the target objects, 7 - 11 epochs of data were obtained. We detected both $H_2O$ and SiO maser lines from four sources: OH16.1-0.3, OH38.10-0.13, OH65.5+1.3, and IRAS 19312+1950. We could not detect $H_2O$ maser emission toward OH13.1+5.1 between the late OH/IR and post-AGB stage. The detected $H_2O$ masers show typical double-peaked line profiles. The SiO masers from four sources, except IRAS 19312+1950, show the peaks around the stellar velocity as a single peak, whereas the SiO masers from IRAS 19312+1950 occur above the red peak of the $H_2O$ maser. We analyzed the properties of detected maser lines, and investigated their evolutionary state through comparison with the full widths at zero power. The distribution of observed target sources was also investigated in the IRAS two-color diagram in relation with the evolutionary stage of post-AGB stars. From our analyses, the evolutionary sequence of observed sources is suggested as OH65.5+1.3${\rightarrow}$OH13.1+5.1${\rightarrow}$OH16.1-0.3${\rightarrow}$OH38.10-0.13, except for IRAS 19312+1950. In addition, OH13.1+5.1 from which the $H_2O$ maser has not been detected is suggested to be on the gateway toward the post-AGB stage. With respect to the enigmatic object, IRAS 19312+1950, we could not clearly figure out its nature. To properly explain the unusual phenomena of SiO and $H_2O$ masers, it is essential to establish the relative locations and spatial distributions of two masers using VLBI technique. We also include the $1.2-160{\mu}m$ spectral energy distribution using photometric data from the following surveys: 2MASS, WISE, MSX, IRAS, and AKARI (IRC and FIS). In addition, from the IRAS LRS spectra, we found that the depth of silicate absorption features shows significant variations depending on the evolutionary sequence, associated with the termination of AGB phase mass-loss.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.81-88
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• 2006

Laterally self-aligned InGaAs/GaAs quantum-dots (QDs) have been fabricated by using a multilayer stacking technique. For the growth optimization, we vary the number of stacks and the growth temperature in the ranges of 1-15 periods and $500-540^{\circ}C$. respectively, Atomic force microscope (AFM) images and photoluminescence (PL) spectra reveal that the lateral alignment of QDs is enhanced in extended length by an increased stack period, but severely degrades into film-like wires above a critical growth temperature. The morphological and the photoluminescence characteristics of laterally self-aligned InGaAs QDs have been analyzed through mutual comparisons among four samples with different parameters. An anisotropic arrangement develops with increasing number of stacks, and high-temperature capping allows isolated QDs to be spontaneously organized into a one-dimensionally aligned chain-like shape over a few ${\mu}m$, Moreover, the migration time allowed by growth interruption plays an additional important role in the chain arrangement of QDs. The QD chains capped at high temperature exhibit blue shifts in the emission energy, which may be attributed to a slight outdiffusion of In from the InGaAs QDs.

• Journal of Korean Society for Atmospheric Environment
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• v.24 no.2
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• pp.176-188
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• 2008

Anthropogenic emissions of nitrogen oxides and sulfur dioxide in Northeast Asia are of great concern because of their impact on air quality and atmospheric chemistry on regional and intercontinental scales. Satellite remote sensing based on DOAS (Differential Optical Absorption Spectroscopy) technique has been preferred to measure atmospheric trace species and to investigate their emission characteristics on regional and global scales. Absorption spectra obtained by the satellite-born instrument, SCIAMACHY (Scanning Imaging Absorption Spectrometer for Atmospheric Chartography) have been utilized to retrieve the information of $SO_2$ and $NO_2$ over Northeast Asia. $SO_2$ levels over Northeast Asia were in order of East China, Yellow Sea, South Sea and Korean Peninsula with mean vertical columns of $1.78({\pm}1.0){\times}10^{16}$, $1.11({\pm}0.67){\times}10^{16}$, $0.60({\pm}0.63){\times}10^{16}$, $0.71({\pm}0.65){\times}10^{16}\;molecules/cm^2$, respectively. $NO_2$ levels were in order of East China, Yellow Sea, Korean Peninsula, and South Sea with mean vertical columns of $1.2({\pm}0.56){\times}10^{16}$, $0.38({\pm}0.19){\times}10^{16}$, $0.48({\pm}0.28){\times}10^{16}$, $0.26({\pm}0.16){\times}10^{16}\;molecules/cm^2$, respectively. High levels of $SO_2$ and $NO_2$ were observed over East China, in particular in winter by the contribution of heating fuel combustion exhausts. The $SO_2$ and $NO_2$ levels over East China were the highest in January with 34% and 42% higher over the annual means. Low levels of $SO_2$ ranged over Korean peninsula, while $NO_2$ levels were relatively high, in particular in winter. The $SO_2$ and $NO_2$ levels over Yellow Sea were relatively higher compared to those over Korean peninsula and South Sea, which could be mainly attributed to their transport from East China.

• Journal of the Korean Chemical Society
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• v.43 no.6
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• pp.636-643
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• 1999

Green-emission intensity of a $Zn_{2-x}Mn_xSiO_4$ phosphor, which is a potential candidate as a green component in PDP device, significantly increases provided that the compound is additionally heat treated at 900$^{\circ}C$ after solid state reaction at 1300$^{\circ}C$. In order to verify origin of such an intensity enhancement after the additional heat treatment in association with the electronic and local structural change at around Mn ions, the Mn K-edge X-ray absorption spectra were recorded. From the analyses of the preedge peak corresponding to $1s{\rightarrow}3d$ bound state transition and XANES spectrum, it is known that most Mn ions are in +2 oxidation state and substitute Zn ion site regardless of the thermal treatment. In addition, EXAFS analyses revealed that Mn ions formed $MnO_4$ tetrahedra with the Mn-O bond length shortened by 0.01${\AA}$ and with reduced Debye-Waller factor in the thermally treated sample.

• Journal of the Korean Ceramic Society
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• v.41 no.5
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• pp.370-374
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• 2004

Sr$_{l-x}$Ba$_{x}$Al$_2$O$_4$:Eu (x = 0, 0.1, 0.2, and 0.3 mol) phosphor was synthesized by the hydrothermal method and its properties of photoluminescence and long-afterglow were investigated. The mixtures of Sr(NO$_3$)$_2$, Al(NO$_3$)$_3$9$H_2O$, and Eu(NO$_3$)$_3$$.$6$H_2O$ salts dissolved in distilled water, after controlling their pH by NH$_4$OH solution, put into an Autoclave reactor with high temperature and pressure to react. Such synthesized SrAl$_2$O$_4$:Eu powders showed homogeneous and ultra-fine particles of sub-micron size. In order to have the photoluminescence characteristic, powders were heat treated at 1100 -140$0^{\circ}C$ for 2 h in Ar/H$_2$ reduction atmosphere. Photoluminescence spectra showed a excitation along the wide wavelength of 250 ∼ 450 nm, and broaden emission with maxima peak at 520 nm. Also, it showed a good long afterglow with decaying over 1000 sec after excitation illumination for 10 min. In addition, the microstructure and crystal structure of SrAl$_2$O$_4$:Eu powders were investigated by an SEM and XRD, respectively.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.21-27
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• 1998

Electrical and optical characteristics of ZnS:Mn/ZnS:Tb multilayer TFEL devices were investigated for multi-color electroluminescent display applications. Emission spectra of M $n^{2+}$ and T $b^{3+}$ ions were observed from ZnS:Mn/ZnS:Tb multi-layer TFEL devices, and were very broad from 540 nm to 640 nm. Saturation luminance measured at 155 V was 1025 Cd/$m^2$. C-V, $Q_{t}$ - $V_{p}$ curves showed that the phosphor capacitance ( $C_{p}$ ) and the insulator capacitance ( $C_{i}$ ) were 13.5nF/$\textrm{cm}^2$ and 60 nF/$\textrm{cm}^2$, respectively. Threshold voltage( $V_{thl}$) was shown to decrease from 126 V to 93 V due to the increase of the applied voltage from 155 V to 185 V, which was attributed to the increase of the polarization charge. The equation for the calculation of the threshold voltage as a function of the applied voltage was proposed for the first time. The calculated threshold voltage agreed well with the data obtained from the measurement.t.t.t.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.67-72
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• 2008

We have studied the effect of heat treatment of multi-walled carbon nanotubes (MWNTs) as a counter electrode on the electro-chemical properties of dye-snsitized solar cells. MWNTs on the p-type Si substrate were synthesized by thermal chemical vapor deposition (CVD) using Fe catalysts. We prepared the two types of MWNTs samples with the different diameters. The rapid thermal annealing (RTA) treatment for the MWNTs was carried out at the growth temperature ($900^{\circ}C$) for 1 minute with $N_2$ gas atmosphere. The structural, electrical and electrochemical properties of MWNTs were investigated by field-emission scanning electron microscopy (FE-SEM), Raman spectroscopy, 2-point probe station and electrochemical impedance spectroscopy (EIS). The I(D)/I(G) ratio of heat-treated MWNTs in Raman spectra was considerably decreased. It was also found that the heat-treated MWNTs showed better redox reaction of iodide at the interface between MWNTs surface and electrolyte than that of as-grown MWNTs. The redox resistance value of heat-treated electrodes was measured to be much lower than that of as-grown electrode at the interface. As a result, the counter electrode using the heat-treated MWNTs showed better electrochemical properties.

• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.279-285
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• 2007

We have demonstrated structural evolution and optical properties of the Si-NWs on Si (111) substrates with synthesized nanoscale Au-Si islands by rapid thermal chemical vapor deposition(RTCVD). Au nano-islands (10-50nm in diameter) were employed as a liquid-droplet catalysis to grow Si-NWs via vapor-liquid-solid mechanism. Si-NWs were grown by a mixture gas of $SiH_4\;and\;H_2$ at pressures of $0.1{\sim}1.0$Torr and temperatures of $450{\sim}650^{\circ}C$. SEM measurements showed the formation of Si-NWs well-aligned vertically for Si (111) surfaces. The resulting NWs are 30-100nm in diameter and $0.4{\sim}12um$ in length depending on growth conditions. HR-TEM measurements indicated that Si-NWs are single crystals convered with about 3nm thick layers of amorphous oxide. In addition, optical properties of NWs were investigated by micro-Raman spectroscopy. The downshift and asymmetric broadening of the Si optical phonon peak with a shoulder at $480cm^{-1}$ were observed in Raman spectra of Si-NWs.