• Economic and Environmental Geology
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• v.44 no.6
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• pp.463-474
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• 2011

The Haenam epithermal mineralized zone is located in the southwestern part of South Korea, and hosts low sulfidation epithermal Au-Ag deposit (Eunsan-Moisan) and clay quarries (Okmaesan, Seongsan, and Chunsan). Epithermal deposits and accompanying hydrothermal alteration related to Cretaceous volcanism caused large zoned assemblages of hydrothermal alteration minerals. Advanced argillic-altered rocks with mineral assemblages of alunite-quartz, alunite-dickite-quartz, and dickite-kaolinite-quartz exposed on the Okmaesan, Seongsan, and Chunsan area. Advanced Spaceborne Thermal Emission and Reflection Radiometer (ASTER), with three visible and near infrared bands, six shortwave infrared bands, and five thermal infrared bands, was used to identify advanced argillic-altered rocks within the Haenam epithermal mineralized zone. The distinct spectral features of hydrothermal minerals allow discrimination of advanced argillic-altered rocks from non-altered rocks within the study area. Because alunite, dickite, and kaolinite, consisting of advanced argillic-altered rocks within the study area are characterized by Al-O-H-bearing minerals, these acid hydrothermal minerals have a strong absorption feature at $2.20{\mu}m$. The band combination and band ratio transformation cause increasing differences of DN values between advanced argillic-altered rock and non-altered rock. The alunite and dickite-kaolinite of advanced argillic-altered rocks from the Okmaesan, Seongsan, and Chunsan have average DN values of 1.523 and 1.737, respectively. These values are much higher than those (1.211 and 1.308, respectively) of non-altered area. ASTER images can remotely provide the distribution of hydrothermal minerals on the surface. In this way good relation between ASTER spectra analysis and field data suggests that ASTER spectral analysis can be useful tool in the initial steps of mineral exploration.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.563-575
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• 2006

Ti(C,N) films are synthesized by pulsed DC plasma enhanced chemical vapor deposition (PEMOCVD) using metal-organic compounds of tetrakis diethylamide titanium at $200-300^{\circ}C$. To compare plasma parameter, in this study, $H_2$ and $He/H_2$ gases are used as carrier gas. The effect of $N_2\;and\;NH_3$ gases as reactive gas is also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma are analyzed in-situ by optical emission spectroscopy (OES) at various pulsed bias voltages and gas species. He and $H_2$ mixture is very effective in enhancing ionization of radicals, especially for the $N_2$. Ammonia $(NH_3)$ gas also highly reduces the formation of CN radical, thereby decreasing C content of Ti(C, N) films in a great deal. The microhardness of film is obtained to be $1,250\;Hk_{0.01}\;to\;1,760\;Hk_{0.01}$ depending on gas species and bias voltage. Higher hardness can be obtained under the conditions of $H_2\;and\;N_2$ gases as well as bias voltage of 600 V. Hf(C, N) films were also obtained by pulsed DC PEMOCYB from tetrakis diethyl-amide hafnium and $N_2/He-H_2$ mixture. The depositions were carried out at temperature of below $300^{\circ}C$, total chamber pressure of 1 Torr and varying the deposition parameters. Influences of the nitrogen contents in the plasma decreased the growth rate and attributed to amorphous components, to the high carbon content of the film. In XRD analysis the domain lattice plain was (111) direction and the maximum microhardness was observed to be $2,460\;Hk_{0.025}$ for a Hf(C,N) film grown under -600 V and 0.1 flow rate of nitrogen. The optical emission spectra measured during PEMOCVD processes of Hf(C, N) film growth were also discussed. $N_2,\;N_2^+$, H, He, CH, CN radicals and metal species(Hf) were detected and CH, CN radicals that make an important role of total PEMOCVD process increased carbon content.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.348-353
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• 1997

Hydrogenated amorphous carbon(a-C:H) films were deposited on p-type Si(100) by DC saddle-field plasma enhanced CVD to investigate the effect of substrate bias on optical properties and structural changes. They were deposited using pure methane gas at a wide range of substrate bias at room temperature and 90 mtorr. The substrate bias voltage ($V_s$) was employed from $V_s=0 V$ to $V_s=400 V$. The information of optical properties was investigated by photoluminescence and transmitance. Chemical bondings of a-C:H have been explored from FT-IR and Raman spectroscopy. The thickness and relative hydrogen content of the films were measured by Rutherford backscattering spectroscopy (RBS) and elastic recoil detection (ERD) technigue. The growth rate of a-C:H film was decreased with the increase of $V_s$, but the hydrogen content of the film was increased with the increase of $V_s$. The a-C:H films deposited at the lowest $V_s$ contain the smallest amount of hydrogen with most of C-H bonds in the of $CH_2$ configuration, whereas the films produced at higher $V_s$ reveal dominant the $CH_3$ bonding structure. The emission of white photoluminescence from the films were observed even with naked eyes at room temperature and the PL intensity of the film has the maximum value at $V_s$=200 V. With $V_s$ lower than 200 V, the PL intensity of the film increased with V, but for V, higher than 200 V, the PL intensity decreased with the increase of $V_s$. The peak energy of the PL spectra slightly shifted to the higher energy with the increase of $V_s$. The optical bandgap of the film, determined by optical transmittance, was increased from 1.5 eV at $V_s$=0V to 2.3 eV at $V_s$=400 V. But there were no obvious relations between the PL peak and the optical gap which were measured by Tauc process.