• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.631-635
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• 2006

The properties of metal interlayered DLC films between the Si substrate and the DLC films were studied. DC magnetron sputtering method has been used to deposit intermediate layers of metals. And RF-PECVD method has been employed to synthesize DLC onto substrates of the silicon and metal layers. After we used metal Inter-layers, such as chromium, nickel, titanium and we studied tribological properties of the DLC films. The thickness of films were observed by field emission scanning electron microscope (FE-SEM). Also the surface morphology of the films were observed by an atomic force microscope (AFM). The crystallographic properties of the films were analyzed with X-ray diffraction (XRD), the friction coefficients were investigated by AFM in friction force microscope (FFM) mode. Tribological performances of the films were estimated by nano-indenter, stress tester measurement.

• Journal of the Korean Society for Heat Treatment
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• v.35 no.3
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• pp.150-158
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• 2022

The effects of scandium addition on the Al-6Si-2Cu Alloy were investigated. The Al-6Si-2Cu-Sc alloy was prepared by gravity die casting process. In this study, scandium was added at 0.2 wt%, 0.4 wt%, 0.8 wt%, and 1.0 wt%. The microstructure of Al-6Si-2Cu-Sc alloy was investigated using Optical Microscope, Field Emission Scanning Electron Microscope, Electron Back Scatter Diffraction, and Transmission Electron microscope. The microstructure of Al-6Si-2Cu alloy with scandium added changed from dendrite structure to equiaxed crystal structure in specimens of 0.4 wt% Sc or more, and coarse needle-shape eutectic Si and β-Al₅FeSi phases were segmented and refined. The nanosized Al₃Sc intermetallic compound was observed to be uniformly distributed in the modified Al matrix.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.63-68
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• 1999

In this paper, the correlation between the growth mechanism and the optical property in GaN films grown by low-pressure metalorganic chemical vapor deposition was characterized using room temperature cathodoluminescence spectroscopy. An intense near band-edge emission, 364nm, and deep-level emission, 550nm, were observed. The intensity of 364nm peak was increased with increasing the beam current. Also the peak position of 364nm emission was red-shifted and the intensity of 550nm peak was increased with increasing the accelerating voltage. It shows that the deep-level emission is strongly associated with crystalline defects in the GaN at early stage. The relationship between the microstructure and the deep level emission observed by scanning electron microscope images and cathodoluminescence spectra was carefully analyzed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.145-146
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• 2013

• Applied Microscopy
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• v.51
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• pp.15.1-15.2
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• 2021

Puccinia miscanthi teliospores were observed on the leaf surface of Miscanthus sinensis using a field emission scanning electron microscope. Details of teliospore mucilage could be visualized through the axial imaging of secondary electrons for a better understanding of pathogen behavior in rust diseases.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.303-310
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• 2008

We fabricated hydrogenated amorphous silicon(a-Si:H) 140 nm thick film on a $180\;nm-SiO_2/Si$ substrate with an inductively-coupled plasma chemical vapor deposition(ICP-CVD) equipment at $250^{\circ}C$. Moreover, 30 nm-Ni film was deposited with a thermal-evaporator sequently. Then the film stack was annealed to induce silicides by a rapid thermal annealer(RTA) at $200{\sim}500^{\circ}C$ in every $50^{\circ}C$ for 30 minuets. We employed a four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscope(FE-SEM), transmission electron microscope(TEM), and scanning probe microscope(SPM) in order to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure evolution, and surface roughness, respectively. We confirmed that nano-thick high resistive $Ni_3Si$, mid-resistive $Ni_2Si$, and low resistive NiSi phases were stable at the temperature of <300, $350{\sim}450^{\circ}C$, and >$450^{\circ}C$, respectively. Through SPM analysis, we confirmed the surface roughness of nickel silicide was below 12 nm, which implied that it was superior over employing the glass and polymer substrates.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.588-593
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• 2014

Current crowding problem can worsen the internal quantum efficiency and the negative-voltage ESD of InGaN-based LEDs. In this paper, by using photon emission microscope and thermal emission microscope measurement, we confirmed that the electric field and the current of the InGaN-based LED sample are crowded in specific regions where the distance between p-type metal contact and n-type metal contact is shorter than other regions. To improve this crowding problem of electric field and current, modified metal contact geometry having uniform distance between the two contacts is proposed and verified by a numerical simulation. It is confirmed that the proposed structure shows better current spreading, resulting in higher internal quantum efficiency and reduced reverse leakage current.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1288-1293
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• 2007

The present study covers the design and analysis of a thermionic scanning electron microscope (SEM) column. The SEM column contains an electron optical system in which electrons are emitted and moved to form a focused beam, and this generates secondary electrons from the specimen surfaces, eventually making an image. The electron optical system mainly consists of a thermionic electron gun as the beam source, the lens system, the electron control unit, and the vacuum unit. In the design process, the dimension and capacity of the SEM components need to be optimally determined with the aid of finite element analyses. Considering the geometry of the filament, a three-dimensional (3D) finite element analysis is utilized. Through the analysis, the beam emission characteristics and relevant trajectories are predicted from which a systematic design of the electron optical system is enabled. The validity of the proposed 3D analysis is also discussed by comparing the directional beam spot radius. As a result, a prototype of a thermionic SEM is successfully developed with a relatively short time and low investment costs, which proves the adoptability of the proposed 3D analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.369.2-369.2
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• 2014

Diamond-like Carbon(DLC) films doping Si were deposited by linear ion source(LIS)-physical vapor deposition method on Si wafer. We have studied the effects of Si content on friction and wear properties of DLC films and the characteristics of the films were investigated using Nano-indentation, Micro raman spectroscopy, Field Emission-Scanning Electron Microscope (FM-SEM) and X-ray Photoelectron Spectroscopy (XPS). The films has been various low-friction and low-stress by varying the flow rates of silane gas. Under the about 2% of Si doping is very suitable for improving the adhesion of films and reducing internal stress while maintaining the surfaces hardness of DLC films. Linear ion source (LIS)를 사용하여 Si wafer위에 Si 이온이 첨가된 DLC 박막을 증착하였다. 참가된Si 이온의 양에 따라 DLC 박막에 미치는 영향을 분석하기 위하여 마찰 계수 및 경도를 비교하였고, Micro raman spectroscopy, Field Emission-Scanning Electron Microscope (FM-SEM) and X-ray Photoelectron Spectroscopy (XPS)를 통하여 표면 상태를 분석하였다. 천체 주입된 가스량의 약 2%까지 Si 이온 주입이 늘어날수록 DLC 박막의 마찰계수는 낮아졌고, 경도는 Si 이온이 주입되지 않았을 경우와 비슷한 값(약 20~23 GPa)을 가졌다. 2% 이상의 주입량에서는 마찰계수는 주입량이 늘어날수록 높아졌으며 경도는 떨어지는 경향을 보였다. 이는 Si이온이 2%이하로 첨가되었을 경우, DLC 박막의 생성시 탄소 이온들의 결합 Stress를 줄여 마찰계수가 줄어든다고 볼 수 있으며, 그 양이 2%이상이 되면 오히려 불순물로 작용하여 DLC 박막의 Stress는 급격히 증가하고 마찰계수도 높아짐을 알 수 있다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.256-257
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• 2015

마그네슘 합금은 낮은 비중, 높은 비강도, 주조성 및 절삭가공성, 치수안정성, 내흠집성이 우수한 특성을 지니고 있는 경량금속으로써 우수한 주조성과 상온강도, 연신율을 나타낸다. 최근에는 마그네슘 합금을 사용한 IT 기기의 케이스 및 자동차 내, 외장 부품 등의 제품이 다양하게 출시되어지며 금속 질감의 감성 기능까지 적용시킨 전자 기기 제품에 대한 수요가 급증하고 있는 추세이다. 하지만 마그네슘 합금의 낮은 부식 저항성은 마그네슘 합금을 적용시킨 제품에 큰 단점으로 작용되고 있으며 이를 해결하기 위한 연구가 활발히 진행 중이다. 본 연구에서는 플라즈마 전해산화법과 실리카 졸-겔 코팅법을 이용하여 마그네슘 합금의 내부식성을 향상시킴과 동시에 금속질감의 감성 기능을 구현하고자 하였다. 플라즈마 전해산화 공정으로 형성된 산화피막층과 $SiO_2$ 코팅으로 형성된 코팅층의 표면과 단면에 대해서는 FE-SEM(Field emission Scanning Electron Microscope)과 FE-TEM(Field emission Transmission Electron Microscope)으로써 확인하였고 전기화학적 특성 분석을 통한 동전위(Potentiodynamic polarization)와 EIS(Eletrochemical Impedance Spectroscopy) 그리고 Salt spray등을 분석하였다.