• 천문학논총
• /
• 제15권spc1호
• /
• pp.61-71
• /
• 2000

The emission line objects such as planetary nebulae, symbiotics, gaseous nebulae, HII regions, novae, supernovae, SNRs, nearby spiral galaxies, dIrr, dE, and nearby active galactic nuclei, would be goldmines for us to dig with the 1.8m bohyunsan optical (BOAO) telescope. We discussed the importance of strategically important diagnostic lines and atomic constant calculation for a study of Galactic and extragalactic emission objects. The scientific background on a spectrometer development history is briefly presented and spectroscopic research areas other than the emission objects are also summarized.

• Applied Science and Convergence Technology
• /
• 제25권1호
• /
• pp.1-6
• /
• 2016

Quantum dots (QDs) are considered as excellent color conversion and self-emitting materials for display and lighting applications. In this article, various technologies which can be used to realize white light emission with QDs are discussed. QDs have good color purity with a narrow emission spectrum and tunable optical properties with size control capabilities. For white light emission with a color-conversion approach, QDs are combined with blue-emitting inorganic and organic light-emitting diodes (LED) to generate white emission with high energy conversion efficiency and a high color rendering index for various display and lighting applications. Various device structures for self-emitting white QD light-emitting diodes (QD-LED) are also reviewed. Various stacking and patterning technologies are discussed in relation to QD-LED devices.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
• /
• pp.153-156
• /
• 2005

In this study, we have investigated transient properties of top emission organic light emitting diode (OLED) with a red electrophosphorescent dopant. The emission spectrum shows a strong peak at 620 nm accompanied with a small peak at 675 nm in the red region. Time evolution of electrophosphorescence reveals a decay time of 703 ms at a voltage pulse of 5 V in a device with an emitting area of 20 $mm^2$. Rise and delay times vary from 450 to 14 ms and 73 to 3 ms, respectively, as the voltage amplitude increases from 4.5 to 10 V. These results are compared with the red emitting device without an electron injection layer.

• Journal of Photoscience
• /
• 제2권1호
• /
• pp.13-18
• /
• 1995

The steady-state emission spectra of dicoumarol (DC) in ethanol and EPA have been examined at various temperatures (77-298 K). At room temperature, a fluorescence spectrum of DC in ethanol shows a emission maximum at 350 nm. In EPA a Stokes-shifted emission band appears around 470 nm in addition to the 350 nm emission, and its intensity is enhanced as temperature decreases. This emission is attributed to a zwitterionic tautomer of DC formed by a single excited-state intramolecular proton transfer (ESIPT) along the internal hydrogen-bonding. The fluorescence lifetimes have been measured at 350 and 450 nm as a function of temperature. The fluorescence decay at 350 nm is single exponential at any temperature, whereas the one at 450 nm becomes biexponential at temperatures below 250 K. These results are discussed in terms of a conformational change followed by the ESIPT. The activation energy barrier for the conformational change has been determined to be 3.7 $\pm$ 0.2 kJ/mole.

• 한국의학물리학회:학술대회논문집
• /
• 한국의학물리학회 2002년도 Proceedings
• /
• pp.244-247
• /
• 2002

We examined a possibility to use inorganic plastic scintillator, which has the effective atomic number close to that of human soft tissue, for the measurement of dose distributions in a shorter time period. The method was to irradiate a block of plastic scintillator as a phantom, and to measure the distribution of the scintillation light by a wave length analyzer through a thread of plastic optical fiber. By irradiating the diagnostic x-ray, we observed the emission spectrum of the scintillation light from the scintillator. It showed a peak at around 420nm with a full width of 140 nm. The emission spectrum was integrated to determine the total number of photons. The dependences of the amount of photons on the irradiated dose were measured. The results of the experiment show that the amount of emission light is in proportional to the irradiated dose. From this fact, we conclude that the present method can be used for the measurement of the depth dose distribution of the diagnostic x-rays.

• 마이크로전자및패키징학회지
• /
• 제9권1호
• /
• pp.29-33
• /
• 2002

The SrS:Cu, Ag thin film electroluminescient devices were fabricated on $AlTiO_3$/ITO/glass substrates by electron-beam evaporation. The emission spectrum of the device was about 460 nm with $\chi$=0.20, y=0.29 in the CIE color coordinator. It was found that the emission spectrum was saturated to pure blue color when Ag sensitizer was doped in SrS:CuCl phosphors. The luminance of the device was increased by increasing the sulfur pressure. The measured luminance was saturated with 430 cd/$m^2$at the applied voltage of 90 V and the maximum luminance was 580 cd/$m^2$at 110V. The polarization charge and conduction charge of the devices were found to be found to be about $3.5\mu$C/$\textrm{cm}^2$ and $7.4\mu$C/$\textrm{cm}^2$, respectively.

• 한국태양에너지학회 논문집
• /
• 제22권4호
• /
• pp.44-50
• /
• 2002

Photosynthesis of plants is effective in the range of 550 to 700 nm of the wavelength of solar irradiation. If the conversion of ultraviolet to the above mentioned region is possible, the photosynthesizing ability is expected to be enhanced. $Eu^{3+}$ doped soda-lime bulk and $TiO_2-SiO_2$ sol-gel coated glasses were prepared and their spectroscopic properties were studied. The absorption and emission spectra for the specimens were measured with the changes of wavelength and Eu ion concentration in the range of the wavelength of 300 to 700nm. The transmittance intensity of visible light through the bulk glass and the coated one was unchanged with the addition of Eu element. The emission spectrum intensity of $Eu^{3+}$ was found to be the maximum at 618 nm which is a transition of $^5DO{\rightarrow}^7F_2$. Additionally, it was shown that the intensity was linearly increased up to 10% of the Eu concentration.

• 한국재료학회지
• /
• 제13권3호
• /
• pp.195-199
• /
• 2003

The $p-CdIn_2$$Te_4$single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_2$$Te_4$crystal and the various heat-treated crystals, the ($D^{\circ}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_2$T $e_4$:Cd, while the ($A^{\circ}$, X) emission completely disappeared in the $CdIn_2$T $e_4$:Cd. However, the ($A^{\circ}$, X) emission in the photoluminescence spectrum of the $CdIn_2$T $e_4$:Te was the dominant intensity like an as-grown $CdIn_2$T $e_4$crystal. These results indicated that the ($D^{\circ}$, X) is associated with $V_{Te}$ acted as donor and that the ($A^{\circ}$, X) emission is related to $V_{cd}$ acted as acceptor, respectively. The $p-CdIn_2$T $e_4$crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of ( $D^{\circ}$, $A^{\circ}$) emission and its TO phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and accepters such as $V_{cd}$ or T $e_{int}$. Also, the In in the $CdIn_2$X$CdIn_4$was confirmed not to form the native defects because it existed in the stable form of bonds.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.179-182
• /
• 2004

The $p-CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the Photoluminescence spectra of the as-grown $CdIn_2Te_4$ crystal and the various heat-treated crystals, the $(D^{o},X)$ emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_2Te_4:Cd$, while the $(A^{o},X)$ emission completely disappeared in the $CdIn_2Te_4:Cd$. However, the $(A^{o},X)$ emission in the photoluminescence spectrum of the $CdIn_2Te_4:Te$ was the dominant intensity like an as-grown $p-CdIn_2Te_4$ crystal. These results indicated that the $(D^{o},X)$ is associated with $V_{Te}$ acted as donor and that the $(A^{o},X)$ emission is related to $V_{Cd}$ acted as acceptor, respectively. The $p-CdIn_2Te_4$ crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of $(D^{o},\;A^{o})$ emission and its TO Phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and accepters such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_2Te_4$ was confirmed not to form the native defects because it existed in the stable form of bonds.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.278-281
• /
• 2003

The p-CIn2Te4 single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the photoluminescence spectra of the as-grown CdIn2Te4 crystal and the various heat-treated crystals, the (Do, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the CdIn2Te4:Cd, while the (Ao, X) emission completely disappeared in the CdIn2Te4:Cd. However, the (Ao, X) emission in the photoluminescence spectrum of the CdIn2Te4:Te was the dominant intensity like an as-grown CdIn2Te4 crystal. These results indicated that the (Do, X) is associated with VTe acted as donor and that the (Ao, X) emission is related to VCd acted as acceptor, respectively. The p-CdIn2Te4 crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of (Do, Ao) emission and its TO phonon replicas is related to the interaction between donors such as VTe or Cdint, and accepters such as VCd or Teint. Also, the In in the CdIn2Te4 was confirmed not to form the native defects because it existed in the stable form of bonds.