• 제목/요약/키워드: Emission Spectrum

검색결과 712건 처리시간 0.03초

Photoluminescience properties for CdIn2Te4 single crystal grown by Bridgman method

  • Hong, Myung-Seok;Hong, Kwang-Joon;Kim, Jang-Bok
    • 센서학회지
    • /
    • 제15권6호
    • /
    • pp.379-385
    • /
    • 2006
  • Single crystal of p-$CdIn_{2}Te_{4}$ was grown in a three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by x-ray diffraction and photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_{2}Te_{4}$ crystal and the various heat-treated crystals, the ($D^{o}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Cd, while the ($A^{o}$, X) emission completely disappeared in the $CdIn_{2}Te_{4}$:Cd. However, the ($A^{o}$, X) emission in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Te was the dominant intensity like in the as-grown $CdIn_{2}Te_{4}$ crystal. These results indicated that the ($D^{o}$, X) is associated with $V_{Te}$ which acted as donor and that the ($A^{o}$, X) emission is related to $V_{Cd}$ which acted as acceptor, respectively. The p-$CdIn_{2}Te_{4}$ crystal was obviously found to be converted into n-type after annealing in Cd atmosphere. The origin of ($D^{o},{\;}A^{o}$) emission and its to phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and acceptors such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_{2}Te_{4}$ was confirmed not to form the native defects because it existed in a stable bonding form.

펄스 UV 램프를 이용한 미생물 소독 및 2-MIB 제거 특성 (Characteristics of Disinfection and Removal of 2-MIB Using Pulse UV Lamp)

  • 안영석;양동진;채선하;임재림;이경혁
    • 상하수도학회지
    • /
    • 제23권1호
    • /
    • pp.69-75
    • /
    • 2009
  • The characteristics of disinfection and organic removal were investigated with pulse UV lamp in this study. The intensity and emission wavelength of pulse UV Lamp were compared with low pressure UV lamp. The emission spectrum range of pulse UV lamp was between 200 and 400 nm while the emission spectrum of low pressure UV lamp was only single wavelength of 254nm. 3 Log inactivation rate of B. subtilis spore by pulse UV and low pressure UV irradiation was determined as $44.71mJ/cm^2$ and $57.7mJ/cm^2$, respectively. This results implied that wide range of emission spectrum is more effective compared to single wavelength emission at 254nm. 500ng/L of initial 2-MIB concentration was investigated on the removal efficiency by UV only and $UV/H_2O_2$ process. The removal efficiency of UV only process achieved approximately 80% at $8,600mJ/cm^2$ dose. 2-MIB removal rate of $UV/H_2O_2$ (5 mg/L $H_2O_2$) process was 25 times increased compared to UV only process. DOC removal efficiency for the water treatment plant effluent was examined. The removal efficiency of DOC by UV and $UV/H_2O_2$ was no more than 20%. Removal efficiency of THMFP(Trihalomethane Formation Potential), one of the chlorination disinfection by-products, is determined on the UV irradiation and $UV/H_2O_2$ process. Maximum removal efficiency of THMFP was approximately 23%. This result indicates that more stable chemical structures of NOM(Natural Organic Matter) than low molecule compounds such as 2-MIB, hydrogen peroxide and other pollutants affect low removal efficiency for UV photolysis. Consequently, pulse UV lamp is more efficient compared to low pressure lamp in terms of disinfection due to it's broad wavelength emission of UV. Additional effect of pulse UV is to take place the reactions of both direct photolysis to remove micro organics and disinfection simultaneously. It is also expected that hydrogen peroxide enable to enhance the oxidation efficiency on the pulse UV irradiation due to formation of OH radical.

BCP 전자수송층 두께가 백색 OLED의 효율 및 발광 특성에 미치는 영향 (Effects of BCP Electron Transport Layer Thickness on the Efficiency and Emission Characteristics of White Organic Light-Emitting Diodes)

  • 서유석;문대규
    • 한국전기전자재료학회논문지
    • /
    • 제27권1호
    • /
    • pp.45-49
    • /
    • 2014
  • We have fabricated white organic light-emitting diodes (OLEDs) using several thicknesses of electron-transport layer. The multi-emission layer structure doped with red and blue phosphorescent guest emitters was used for achieving white emission. 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was used as an electron-transport layer. The thickness of BCP layer was varied to be 20, 55, and 120 nm. The current efficiency, emission and recombination characteristics of multi-layer white OLEDs were investigated. The BCP layer thickness variation results in the shift of emission spectrum due to the recombination zone shift. As the BCP layer thickness increases, the recombination zone shifts toward the electron-transport layer/emission-layer interface. The white OLED with a 55 nm thick BCP layer exhibited a maximum current efficiency of 40.9 cd/A.

Spectral Studies of Conformational Change at the Active Site of Mutant O-acetylserine Sulfhydrylase-A (C43S)

  • Park, Joon-Bum;Kim, Sung-Kun;Yoon, Moon-Young
    • BMB Reports
    • /
    • 제29권1호
    • /
    • pp.32-37
    • /
    • 1996
  • The cysteine 43, potentially important in the activity of O-acetylserine sulfhydrylase (OASS) from Salmonella typhimurium, has been changed to serine. This mutant enzyme (C43S) has been studied in order to gain insight into the structural basis for the binding of inhibitor, substrate and product. UV-visible spectra of C43S exhibit the same spectral change in the presence of OAS as that observed with wild type enzyme, indicating C43S will form an ${\alpha}$-aminoacrylate Schiff base intermediate. At pH 6.5, however, the deacetylase activity of C43S is much higher than wild type enzyme indicating that cysteine 43 plays a role in stabilizing the ${\alpha}$-aminoacrylate intermediate. The fluoroscence spectrum of C43S exhibits a ratio of emission at 340 to 502 nm of 16.9, reflecting the lower fluorescence of PLP and indicating that the orientation of cofactor and tryptophan are different from that of the wild type enzyme. The emission spectrum of C43S in the presence of OAS gives two maxima at 340 and 535 nm. The 535 nm emission is attributed to the fluoroscence of the ${\alpha}$-aminoacrylate intermediate. The visible circular dichroic spectrum was similar to wild type enzyme, but the negative effect observed at 530~550 nm and the molar ellipicity values for the mutant are decreased by about 50% compared to wild type enzyme. The circular dichroic and fluoroscence studies suggest binding of the cofactor is less asymmetric in C43S than in the wild type enzyme.

  • PDF

알루미늄 군입자 화염특성 분석을 위한 광학기법 연구 (Optical Diagnostic Study for Flame Characteristic Analysis in Aluminum Dust Clouds)

  • 이상협;고태호;임지환;이도형;윤웅섭
    • 한국추진공학회지
    • /
    • 제17권5호
    • /
    • pp.47-53
    • /
    • 2013
  • 본 연구에서는 고에너지 금속 알루미늄 군입자 연소 화염 분석을 위한 측정기법 개발 연구로서 스펙트로메터를 사용하여 화염 온도와 자발광 스펙트럼을 측정하였다. 마이크로 크기의 알루미늄 군입자 연소 반응시 발생하는 화염온도는 약 2400 K 이상의 초고온이므로 비접촉식 광학 계측 방법을 사용하였으며, 측정을 위해 개발된 기법은 520 nm, 640 nm를 사용하는 이색법을 응용한 방법과 광대역 파장 비교법으로서 각각의 방법은 정밀하게 검증 후 실험에 적용되었다. 연소실 하단에서 화염온도 측정결과 두 방법 모두 2400 K 이상의 화염온도를 확인할 수 있었으며 자발광 측정 결과 알루미늄 연소 반응시 가장 지배적으로 발생하는 화학종인 AlO를 확인할 수 있었다.

음향방출 기반 배관 조기 결함 검출 및 진단 방법 (Acoustic Emission based early fault detection and diagnosis method for pipeline)

  • 김재영;정인규;김종면
    • 예술인문사회 융합 멀티미디어 논문지
    • /
    • 제8권3호
    • /
    • pp.571-578
    • /
    • 2018
  • 노후된 배관은 예기치 못한 누수나 균열을 발생시킨다. 이를 방치하거나 늦게 대응하면 지속적인 가스자원, 수자원 등의 막대한 손실을 발생시킨다. 본 논문에서는 배관의 결함을 검출하기 위해 음향방출 신호를 사용하는 배관 조기 결함 검출 방법과 진단 알고리즘을 제안한다. 배관의 결함으로 인해 변형이 생길 경우 배관의 고유진동수가 변화하므로 이를 관찰함으로써 배관의 이상 유무를 판단할 수 있다. 배관 조기결함 검출 방법은 정상상태의 스펙트럼과 취득된 신호의 스펙트럼을 주파수 성분의 크기에 대해 비교함으로써 배관의 결함 유무를 판단한다. 배관 조기 결함 진단 알고리즘은 정상상태와 결함상태를 기계학습 알고리즘인 서포트 벡터 머신(SVM)으로 학습하고 실제 취득된 배관 음향방출 신호를 입력하여 배관 상태를 진단한다. 실험에서는 제작된 배관 테스트베드를 사용하여 정상상태, 5mm 균열 상태, 10mm 균열 및 파공 상태를 가공하여 제안 방법을 테스트하였다. 실험 결과에서는 제안한 검출 방법 및 진단 알고리즘의 배관 조기 결함 검출 성능의 우수성을 검증하였다.

Spectroscopic Evidence for Aggregation of Stilbene Derivatives in Solution

  • Aguiar, M.;Akcelrud, L.;Pinto, M.R.;Atvars, T.D.Z.;Karasz, F.E.;Saltiel, Jack
    • Journal of Photoscience
    • /
    • 제10권1호
    • /
    • pp.149-155
    • /
    • 2003
  • The absorption, fluorescence and fluorescence-excitation spectra of concentrated toluene solutions of selected para substituted trans-stilbene derivatives provide strong evidence for aggregation. A red-shifted fluorescence spectrum peaking at 420 nm gains in intensity as the stilbene concentration is increased. The excitation spectrum of this new emission is well to the red of the normal stilbene absorption spectrum, consistent with the appearance of a red shifted shoulder in the UV spectrum. Formation of a fluorescent ground state dimer (or higher aggregate) is proposed to account for these observations. The presence of polar substituents is crucial to the formation of this ground state complex.

  • PDF

음향방출법에 의한 발전용 밸브 누설평가 (The Evaluation of Internal Leak in Valve for Power Plant Using Acoustic Emission Method)

  • 이상국;이선기;이준신;이욱륜
    • 대한기계학회:학술대회논문집
    • /
    • 대한기계학회 2004년도 추계학술대회
    • /
    • pp.1733-1739
    • /
    • 2004
  • The objective this study is to estimate the feasibility of acoustic emission method for the internal leak from the valves in nuclear power plants. From the experimental results, it was suggested that the acoustic emission method for monitoring of leak was feasible. When the background levels are higher than the acoustic signals from leak, we can detect the leak analyzing the spectrum of the remainders which take the background noise from the acoustic signals.

  • PDF

GaOOH 선구체의 스핀코팅에 의한 GaN 박막의 성장 (Growth of GaN Thin-Film from Spin Coated GaOOH Precursor)

  • 이재범;김선태
    • 한국재료학회지
    • /
    • 제17권1호
    • /
    • pp.1-5
    • /
    • 2007
  • GaN thin fan were grown by spin coated colloidal GaOOH precursor. Polycrystalline GaNs with crystalline size of $10{\sim}100nm$ were grown on $SiO_2$ substrate. The shape of crystallite above $900^{\circ}C$ had the hexagonal plate and column type. X-ray diffraction patterns for them correspond to those of the hexagonal wurtzite GaN. With increasing droplets. i.e, thickness of deposited layers, XRD intensity increased. PL (photoluminescence) spectrum consisted with an weak near band-edge emission at 3.45 eV and a broad donor-acceptor emission band at 3.32 eV. From the low temperature PL measurement on GaN grown at $800^{\circ}C$ that the shallow donor-acceptor recombination induced emission was more intense than the near band-edge excitonic emission.