• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.494-498
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• 2022

In this study, SiO₂ 20 phr, ATH 70 phr, and platinum flame retardant were mixed with raw silicone rubber and -10 kV was applied to measure electrostatic charge attenuation voltage, surface resistance, and volume resistance, and the following conclusions were obtained. When the platinum flame retardant was 0 phr, the humidity 74.6% and the temperature was 21.8℃, the potential was half-reduced to 0.63 kV, 0.57 kV, and 0.44 kV when the applied voltage was changed from -10 kV to -8 kV, and the time halved to 50% was increased to 2.40 seconds, 2.47 seconds, and 2.61 seconds. It was confirmed that as the platinum flame retardant increased from 0.1 to 0.3 phr, the potential half-reduced to 0.67 kV, 0.60 kV, and 0.595 kV decreased, and the charge potential attenuation time half-reduced to 50% decreased to 3.44 seconds, 1.78 seconds, and 1.60 seconds. It was confirmed that the surface resistance increased as the humidity decreased, and the volume resistance decreased as the platinum flame retardant increased.

• Journal of the Korean Society of Safety
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• v.15 no.4
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• pp.62-68
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• 2000

Static electricity in electronics manufacturing plants causes the economic loss, yet it is one of the least understood and least recognized effects haunting the industry today. Today's challenge in semiconductor devices is to achieve greater functional density pattern and to miniaturize electronic systems of being more fragile by electrostatic discharges(ESD) phenomena. As the use of automatic handling equipment for static-sensitive semiconductor components is rapidly increased, most manufacturers need to be more alert to the problem of ESD. One of the most common causes of electrostatic damage is the direct transfer of electrostatic charge from the human body or a charged material to the static-sensitive devices. To evaluate the ESD hazards by charged human body and devices, in this paper, characteristics of electrostatic attenuation in domestic semiconductor devices is investigated and the voltage to cause electronic component failures is investigated by field-induced charged device model(FCDM) tester. The FCDM simulator provides a fast and inexpensive test that faithfully represents ESD hazards in plants. Also the results obtained in this paper can be used for the prevention of semiconductor failure from ESD hazards.