• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.192-193
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• 2002

In this paper we investigate the phase modulation efficiency in the electrooptic phase modulator using PPpinNN GaAs/AlGaAs W-type waveguide. The phase change is affected by the refractive index change taking place inside the depletion region. The behavior of the modulator can be understood in terms of two electric field-related and two carrier-related effects linear electrooptic, quadratic electrooptic, plasma, and bandgap shift. As a result, the phase modulation efficiency was measured about 34.6($^{\circ}$/V$.$mm) for the TE polarized light. The quadratic electrooptic coefficient R 5.82${\times}$10$\^$-15/($\textrm{cm}^2$/V$^2$) is Obtained ant the Phase efficiency Caused by the quadratic electrooptic effect is about 10 times larger than that from the conventional linear electrooptic effect.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.5
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• pp.644-648
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• 1995

Transparent xBa(La$_{1}$2/Nb$_{1}$2/)O$_{3}$-(1-x)Pb(Zr, Ti)O$_{3}$ (x=8.5, 9.0[mol.%], Zr/Ti=70/30~40/60) ceramics were fabricated by the two-stage sintering method, the electrooptic properties were investigated with Ba(La$_{1}$2/Nb$_{1}$2/)O$_{3}$ content and Zr/Ti composition ratio. Decreasing the Zr/Ti ratio, the electrooptic property was changed from a quadratic electrooptic effect to a linear electrooptic effcet. In the BLN-PZT 9.0/50/50 specimen having the tetragonal structure, the linear electrooptic coefficient had the highest value of 6.01*10$^{-10}$ [m/V] and in the BLN-PZT 9.0/55/45 specimen which located near the MPB region, the quadratic electrooptic coefficient had the highest value of 10.53*10$^{-16}$ [m$^{2}$/V$^{2}$].

• The Transactions of the Korean Institute of Electrical Engineers
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• v.34 no.10
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• pp.399-406
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• 1985

In this paper transparent PLZT ceramics for the composition of 9/65/35 (La/Zr/Ti ) are fabricated using hotpress and the possibility of application to optical shutter is examined by obtaining the On-Off characteristics of specimens. The ferroelectric E-P hysteresis loop exhibits slim loop suitable for the quadratic electrooptic effect. Measurements of the electrooptic effect show that specimens have the quadratic electrooptic effect but the light intensities as functions of electric field exhibit butterfly type hysteresis curves because of its slightly large saturation remanent polarization and coercive field. On-Off characteristics are obtained by electric fields of-6 kv/cm and +2kv/cm. As a result of experiments, 9/65/35 PLZT ceramics can be applied to optical shutter but construction with other composition which has more slim hysteresis loop is desired for obtaining the Off state by zero electric field.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.48 no.3
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• pp.53-59
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• 2011

Charge transfer through DNA oligonucleotides has been investigated for potential applications of DNA into molecular electrooptic switching devices. Electrons were injected using gold electrode probes where DNA oligomers were adsorbed that are separated in medium. The results show that increased adsorption of DNA reduces the ionization current due to the combined effect of charge transfer through DNA and surface-limited charge transport. The probe-based charge injection was extended to examine the capability of extinguishing fluorescence of Cy3 dye molecules attached to DNA. It is expected that the results may be employed to implementing a novel electrooptic switching device based on DNA molecules.

• 전기의세계
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• v.19 no.6
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• pp.8-12
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• 1970

A Device is described which intensity modulates a light beam at modulating frequency in the M/W region. A Method of designing a practical crystalline microwave-Freg. light modulator has been described. In addition, Electrooptic properties and operation as light modulator of NH$_{4}$H$_{2}$po$_{4}$ is described. A light path is provided through the crystal into a suitably oriented analyzer. The intensity of the light beam emerging from the latter varies at the same rate as the cavity frequency.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.72-78
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• 1998

Polarization mode converters have been produced by utilizing Ti:LiNbO$_{3}$ channel waveguide and strain-optic effect. Shear strain for periodic perturbations of optical channel waveguides and phase matching can be obtained by an evaporated periodic SiO$_{2}$ thin film at 300.deg. C. The electrodes located on the either side of waveguide provide a means to electro-optically tune the wavelength for maximum polarization conversion via the electrooptic effect. The maximum conversion effeciency was observed at 21.deg. C for V=0 and 46.deg. C for V=30V aro the device having 7 .mu.m waveguide wiith and 350 periodic pads. The dependence of the number of pads on conversion efficiency was observed experimentally.fficiency was observed experimentally.

• Analytical Science and Technology
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• v.5 no.1
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• pp.115-120
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• 1992

The upper limit of solid solution of $Al_2O_3$ in $LiTaO_3$ was investigated using X-ray diffraction and Raman spectroscopy. By substituting cations in $LiTaO_3$ with $Al^{3+}$, the melting temperature was lowed and the ferroelectric properties can be improved. It is easier at lower temperature to fabricate the single crystal used for SAW filters and IR sensors. From the measured lattice constants and Raman band broadening, the solubility limit was X=0.25mol in $Li_{1-X}Al_{2X}Ta{1-X}O_3$, above which $Al_2O_3$ was obsered as a second phase. The Raman band of sintered $LiTaO_3$ was compared with that of the single crystal to see the effect of grain size on the band broadening.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.15-22
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• 2011

Integrated-optic symmetric/asymmetric Mach-Zehnder interferometers at $1.3{\mu}m$ wavelength were studied as sensing part for electric-field measurement system. The devices were simulated based on the BPM software and fabricated utilizing Ti-diffused $LiNbO_3$ channel optical waveguides and lumped-type electrodes. A half-wave voltage of $V_{\pi}$=6.6V and modulation depth of 100% and 75% for a symmetric structure were measured for 200Hz and 1kHz electrical signal bandwidth, respectively. By the way, almost half-maximum power transmission was observed for asymmetric interferometers with ${\pi}$/2 intrinsic phase difference. Expected experimental measurements were observed for 1kHz electrical signal bandwidth.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.50-54
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• 1999

$(Pb_xLa_{1-x}) (Zr_yTi_{1-y})O_3$ (PLZT) thin films with electrooptic effect are promising for the optical application such as display or light shutter. However, it is difficult to use inexpensive and transparent glass substrates because the conventional process for preparation of PLZT requires temperatures above $600^{\circ}C$. In order to deposit a perovskite PLZT thin films at low processing temperatures through alkoxide route, we have offered several seeding processes which reduce the activation energy for crystallization. In this study, we optimized the stacking structure of multilayered PLZT for obtaining single phase perovskite at lower temperatures. As a result, ferroelectric PLZT thin films with different compositions were successfully prepared at a temperature as low at $500^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.1260-1262
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• 1992

We have developed an optical switch array, which consists of 16X8 reflective symmetric self electrooptic effect devices(RS-SEED), from MOCVD-grown GaAs/AlGaAs low-barrier(LB) multiple quantum well (MQW) structures.