• 제목/요약/키워드: Electronic transport

검색결과 907건 처리시간 0.029초

Au/3C-SiC/Al 쇼터키 다이오드의 전기적 특성 (Electrical characteristics of Au/3C-SiC/Si/Al Schottky, diode)

  • 심재철;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.65-65
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    • 2009
  • High temperature silicon carbide Schottky diode was fabricated with Au deposited on poly 3C-SiC thin film grown on p-type Si(100) using atmospheric pressure chemical vapor deposition. The charge transport mechanism of the diode was studied in the temperature range of 300 K to 550 K. The forward and reverse bias currents of the diode increase strongly with temperature and diode shows a non-ideal behavior due to the series resistance and the interface states associated with 3C-SiC. The charge transport mechanism is a temperature activated process, in which, the electrons passes over of the low barriers and in turn, diode has a large ideality factor. The charge transport mechanism of the diode was analyzed by a Gaussian distribution of the Schottky barrier heights due to the Schottky barrier inhomogeneities at the metal-semiconductor interface and the mean barrier height and zero-bias standard deviation values for the diode was found to be 1.82 eV and $s_0$=0.233 V, respectively. The interface state density of the diode was determined using conductance-frequency and it was of order of $9.18{\times}10^{10}eV^{-1}cm^{-2}$.

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초전도 케이블용 BSCCO의 사고각에 따른 통전특성 분석 (The Analysis of The Transport Current Property Depend on The Fault Angle of BSCCO HTS Cable)

  • 이동혁;두호익;두승규;김민주;김용진;한병성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.367-368
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    • 2009
  • BSCCO HTS(High Temperature Superconductor) could be applied to superconducting cable, magnet and motor, using its hight critical properties. Especially, superconducting cable has a hight possibility of practical use due to the possibility of low voltage and high capacity transmission caused by its lower power loss than copper cable. In this paper, the transport characteristics of BSCCO superconducting cable, according to the change of BSCCO superconducting cable's accident point at phase $0^{\circ}$ and $45^{\circ}C$, were analyzed and compared each other. Consequently, when the accident was occur the resistance of the HTS was higher at the point phase $0^{\circ}$ than $45^{\circ}$ which means it will cause much higher load on the HTS.

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다항근사 볼츠만 방정식의 타당성 검토를 위한 가스의 전자수송계수 비교 (The comparison of electron transport coefficients of gases for analysis of multi-term approximation of the Boltzmann equation)

  • 송병두;하성철;전병훈
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 춘계학술대회 논문집 유기절연재료 방전 플라즈마연구회
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    • pp.69-72
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    • 2003
  • This paper describes the information for the difference between two-term and multi-term approximation of the Boltzmann. In previous paper, we calculated the electron transport coefficients in pure Oxygen and Argon gases by using two-term approximation of Boltzmann equation. Therefore, in this paper, we calculated the electron transport coefficients(W and $N{\cdot}D_L$) in pure Oxygen and Argon gases for range of E/N values from 0.01~500[Td] at the temperature was 300[K] and pressure was 1[Torr] by using multi-term approximation of the Boltzmann equation by Robson and Ness, The results of two-term and multi-term approximation of the Boltzmann equation has been compared with the experimental data for a range of E/N.

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볼츠만 다항근사 방정식을 이용한 Xe 가스의 전자수송계수 해석 (The analysis of electron transport coefficients in Xenon gas by multi-term approximation of the Boltzmann equation)

  • 전병훈;하성철;송병두
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 춘계학술대회 논문집 유기절연재료 방전 플라즈마연구회
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    • pp.73-76
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    • 2003
  • This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients in pure Xenon gas by using two-term approximation of Boltzmann equation. Therefore, in this paper, we calculated the electron transport coefficients(W, $N{\cdot}D_L$ and $D_{L/{\mu}}$) in pure Xenon gas for range of E/N values from 0.01 ~ 500[Td] at the temperature was 300[K] and pressure was 1[Torr] by using multi-term approximation of the Boltzmann equation by Robson and Ness, The results of two-term and multi-term approximation of the Boltzmann equation has been compared with the experimental data by L. S. Frost and A. V. Phelps for a range of E/N.

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볼츠만 방정식에 의한 $CF_4$ 분자가스의 전리 및 부착계수에 관한 연구 (The study of ionization and attachment coefficients in $CF_4$ molecular gas by Boltzmann equation)

  • 송병두;하성철;전병훈
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.628-631
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    • 2004
  • A tetrafluoromethane$(CF_4)$ is most useful gas in plasma dry etching, because it has a electron attachment cross-section. therefor it is important to calculate transport coefficients like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient. and critical E/N. The aim of this study is to get these transport coefficients for information of the insulation strength and efficiency of etching process. Electron transport coefficients in $CF_4+Ar$ gas mixture are simulated in range of E/N values from 1 to 250 [Td] at 300[K} and 1 [Torr] by using Boltzmann equation method. The results of this method can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas. and is presented in this paper for various mixture ratios of $CF_4+Ar$ gas mixture.

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Charge Transport Properties of Boron/Nitrogen Binary Doped Graphene Nanoribbons: An ab Initio Study

  • Kim, Seong Sik;Kim, Han Seul;Kim, Hyo Seok;Kim, Yong Hoon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.180.2-180.2
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    • 2014
  • Opening a bandgap by forming graphene nanoribbons (GNRs) and tailoring their properties via doping is a promising direction to achieve graphene-based advanced electronic devices. Applying a first-principles computational approach combining density functional theory (DFT) and DFT-based non-equilibrium Green's function (NEGF) calculation, we herein study the structural, electronic, and charge transport properties of boron-nitrogen binary edge doped GNRs and show that it can achieve novel doping effects that are absent for the single B or N doping. For the armchair GNRs, we find that the B-N edge co-doping almost perfectly recovers the conductance of pristine GNRs. For the zigzag GNRs, it is found to support spatially and energetically spin-polarized currents in the absence of magnetic electrodes or external gate fields: The spin-up (spin-down) currents along the B-N undoped edge and in the valence (conduction) band edge region. This may lead to a novel scheme of graphene band engineering and benefit the design of graphene-based spintronic devices.

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전하 트랩 및 주입 문제를 해결하기 위한 비정질 셀레늄 필름의 계면 특성 (Interfacial Properties of a-Se Thick Films to Solve Charge Trap and Injection Problems)

  • 조진욱;최장용;박창회;김재형;이형원;남상희;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.497-500
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    • 2001
  • Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

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차폐층을 갖는 다층고온초전도 전력케이블의 전류분류 분석 (Analysis on Current Distribution in Multi-layer HTSC Power Cable with Shield Layer)

  • 이종화;임성훈;임성우;두호익;한병성
    • 한국전기전자재료학회논문지
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    • 제19권3호
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    • pp.273-279
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    • 2006
  • High-$T_c$ superconducting (HTSC) power cable is one of the interesting parts in power application using HTSC wire. However, its stacked structure makes the current distribution between conducting layers non-uniform due to difference between self inductances of conducting layers and mutual inductances between two conducting layers, which results in lower current transmission capacity of HTSC power cable. In this paper, the transport current distribution between conducting layers was investigated through the numerical analysis for the equivalent circuit of HTSC power cable with a shield layer, and compared with the case of without a shield layer. The transport current distribution due to the increase of the contact resistance in each layer was improved. However, its magnetization loss increased as the contact resistance increased. It was confirmed from the analysis that the shield layer was contributed to the improvement of the current distribution between conducting layers if the winding direction and the pitch length were properly chosen.

Transport Properties of Conversion Materials for Digital Radiography

  • Kim, Jae-Hyung;Park, Chang-Hee;Nam, Sang-Hee
    • Transactions on Electrical and Electronic Materials
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    • 제8권6호
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    • pp.250-254
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    • 2007
  • Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.