• 제목/요약/키워드: Electronic property

검색결과 1,568건 처리시간 0.029초

RF magnetron sputtering 방법을 이용하여 제작된 PTFE 박막의 발수성 분석

  • 윤현오;서성보;김지환;김미선;류성원;박승환;김화민
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.123-123
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    • 2009
  • In our experiment, a PTFE was sputter-coated on substrates to induce water-repellent properties and the RF-magnetron sputtering method for fabrication of PTFE film is used due to the advantages of the simple process, time saving, environmentally friendly, insulating property, and a good adhesion property to substrates. As a result of the correlation between surface roughness of PTFE films and contact angle with water, we found that the roughness surfaces are proportioned to contact angles related to low interfacial energy.

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IPS-LCD의 전압-투과율 히스테리시스법을 이용한 잔류 DC 전압 특성 (Residual DC Voltage Property in the In-plane Switching Cell Using the Voltage-transmittance Hysteresis Method)

  • 김향율;서대식;김재형
    • 한국전기전자재료학회논문지
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    • 제14권6호
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    • pp.487-490
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    • 2001
  • Residual DC voltage of the in-plane switching (IPS)-liquid crystal display(LCD) by voltage-transmittance (V-T) hysteresis method was studied. Several IPS-LCD which have different concentrations of cynao LCs and different resistivities of fluorine LCs were fabricated. We found that the residual DC voltage of the IPS-LCD was decreasing with increasing concentration of cyano LCs and increasing with decreasing specific resistivity of fluorine LC materials. The residual DC voltage property can be improved by low molecular weight and high polarity of cyano LC.

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열처리온도에 따른 $SnO_2$/Si 이종접합 태양전지의 전기적 특성 (Electrical characteristics of Sn $O_{2}$Si heterojunction solar cells depending on annealing temperature)

  • 이재형;박용관
    • E2M - 전기 전자와 첨단 소재
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    • 제7권6호
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    • pp.481-489
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    • 1994
  • The $SnO_2$/(n)Si solar cell was fabricated by electron beam evaporation method, and their properties were investigated. In proportion to increase of substrate and annealing temperature, the conductivity of $SnO_2$ thin film was increased, but its optical transmission decreases because of increasing optical absorption of free electrons in the thin film. $SnO_2$/Si Solar cell characteristics were improved by annealing, but the solar cells was deteriorated by heat treatment above 500[.deg. C]. The optimal outputs of $SnO_2$/Si solar cell through above investigations were $V_{\var}$:350[mV], $J_{sc}$ ;16.53[mA/c $m^{2}$], FF;0.41, .eta.=4.74[%]

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한국의 해양통신 발전방향에 관한 연구 (A Study on the Development Direction in Korea Marine Communication)

  • 신현식
    • 한국전자통신학회논문지
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    • 제8권4호
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    • pp.527-534
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    • 2013
  • 이 논문은 우리나라의 해난 사고가 매년 600~700건씩 발생되어 많은 인명과 재산피해가 나타나고 있다. 그러므로 해난 재해시 선박 통신의 역할은 많은 인명과 재산피해를 가져오는 원인을 제거하는 것이라 생각하고 국가적인 차원에서 연구하고자 한다.

$O_2$ : Ar 혼합가스 플라즈마로 ITO표면 처리한 OLED의 동작특성 향상과 표면개질에 관한 연구 (Plasma treatments of indium tin oxide(ITO) anodes in argon/oxygen to improve the performance and morphological property of organic light-emitting diodes(OLED))

  • 서유석;문대규;조남인
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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    • pp.67-68
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    • 2008
  • A simple bi-layer structure of organic light emitting diode (OLED) was used to study the characteristics of anode preparation. Indium tin oxide (ITO) anode surface treatment of OLEDs was performed to get the optimum condition for the ITO anode. The ITO surface was treated by $O_2$ or $O_2$ / Ar mixed gas plasma with different processing time. The electrical characteristics of OLED were improved by plasma treatment. The operating voltage of OLED with $O_2$ or $O_2$/Ar mixed gas plasma treated anodes decreases from 8.2 to 3.4 V and 3.2V, respectively. The $O_2$ /Ar mixed gas plasma treatment results in better electrical property.

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Effects of Cu Wire's Shape on the Plating Property of Sn-Pb Solder for Photovoltaic Ribbons

  • Cho, Tae-Sik;Chae, Mun-Seok;Cho, Chul-Sik
    • Transactions on Electrical and Electronic Materials
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    • 제15권4호
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    • pp.217-220
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    • 2014
  • We studied the plating properties of Sn-Pb solder according to the shape of the Cu wire's cross-section for photovoltaic ribbon. The thickness of the Sn-Pb layer largely decreased to 29% on a curved Cu surface, compared to a flat Cu surface. This phenomenon is caused by the geometrical decrease in the contact angle of the liquid Sn-Pb solder and an increase in the surface energy of the solid/vapor on the curved Cu surface. We suggest a new ribbon's design where the Cu wire's cross-section is a semi-ellipse. These semi-ellipse ribbons can decrease the use of Sn-Pb solder to 64% and increase the photovoltaic efficiency, by reducing the contact area between the ribbon and cell, to 84%. We also see an improvement of reflectivity in the curved surface.

구동방법에 따른 세라믹 메탈 할라이드 램프의 전기적 및 방전특성 분석 (Electrical and Discharge Charcteristics Analysis of Ceramic Metal Halide Lamp with Operating Method)

  • 장혁진;양종경;김남군;박대희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1623_1624
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    • 2009
  • The use of arc tubes made of ceramic material further enhanced some of the metal halide lamp’s properties. These properties translate into higher efficacy with better color rendering, stable color through lamp long life. Recently, due to an increase in the application of the ceramic metal-halide lamp, the study for the property etc. according to Ballast's driving scheme and the study for arc tube material, optimization of gas and so on are being proceeded to improve the property of the lamp. Especially, to control ceramic metal-halide lamp, the vigorous study and practical use with respect to Electronic Ballast, which has been improved in the disadvantages of the conventional Magnetic Ballast are made. In this paper, Electrical characteristics and gas insulation destroy time are analyzed by comparing magnetic ballast with electronic ballast.

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플라즈마처리에 따른 에폭시 복합재료의 표면특성 (Surface Properties of Epoxy Composites by Plasma Treatment)

  • 임경범;이백수;이덕출
    • 한국전기전자재료학회논문지
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    • 제14권10호
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    • pp.821-827
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    • 2001
  • In this study performed to identify a degradation mechanism in macromolecular insulating material, the contact angel, surface potential decay, surface resistivity, and XPS analysis were compared after exposure of FRP laminate to plasma discharge. In the case of contact angle, the surface of specimen untreated showed weak hydrophobic property of 73。. However, the contact angle was decreased to 20。in the plasma-treated specimen. In the case of chemical changes arising form plasma treatment, carboxl radicals were generated mainly in the surface treated, which was rapidly changed to the hydrophilic one. In the corona potential decay study to determine the electrical changes of the surface, positive charges were rapidly decreased when compared with negative charges, leading to negative property in the surface of specimen not treated. However, in the case of the hydrophilic surface, lots of carboxl radicals acting as positive polarity were generated, resulting in positive surface. Owing to such positive surface, charges of negative polarity applied were rapidly decreased.

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Ag 편광 광도핑에 의한 칼코게나이드 박막의 광유기 이방성(PA) (The photoinduced anisotropy(PA) by Ag polarized-photodoping in amorphous chalcogenide thin films)

  • 장선주;여철호;박정일;정홍배
    • 한국전기전자재료학회논문지
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    • 제13권6호
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    • pp.533-537
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    • 2000
  • It was known that chalcogenide glasses have the superior property of the photoinduced anisotropy(PA). In this study we observed the phenomenon of Ag polarized-photodoping in chalcogenide As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ and the double-layer of Ag doped As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ thin film using the irradiation with the polarized He-Ne laser light. The Ag polarized-photodoping results in reducing the time of saturation anisotorpy and increasing the sensitivity of linearly anisotropy intensity up to maximum 220% The Ag polrized-photodoping shows improvement of the photoinduced anisotropy property in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.in film.ilm.

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Ge계 열전센서의 출력특성 (Output Property of Ge-Thermopile Sensor)

  • 박수동;김봉서;오민욱
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.265-266
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    • 2006
  • It was well known that thermopile was quiet a competent sensor using to probe the temperature of "hot point" where the temperature can be off the temperature-limitation for normal operation of the main electrical power equipment. In the present work, we aimed for developing new Ge-thermopile materials which can be using a non-contact temperature sensors at various hot-point of the power equipment and evaluation of its output property. As a results of the present works, a new thermopile which were composed Ga-poded p-type and Sb-doped n-type in Ge-semiconductor were designed and manufactured by MBE(Molecular Beam Epitaxy) process and showed superior sensitivity at room temperature.

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