• 제목/요약/키워드: Electronic property

검색결과 1,568건 처리시간 0.032초

ArF 포토리소그라피공정을 위한 실리콘이 함유된 반사방지막코팅 (Silicon Containing Bottom Anti-Reflective Coating for ArF Photolithography)

  • 이준호;김형기;김명웅;임영택;박주현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.66-66
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    • 2006
  • Development of ArF Photo-lithography process has proceeded with the increase of numerical aperature (NA) and the decrease of resist thickness. It makes many problems such as cost and process complexity. A novel spin-on hard mask system is proposed to overcome many problems Spin-on hard mask composed of two layers of siloxane and carbon. The optical thickness of two layers is designed from reflectivity measurement at specified n, k respectively. The property of photo-resist shows different results according to Si contents. Si-contents was measured XPS(X-ray Photoelectron spectroscopy).

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저자상거래에서 신 경쟁형태에 따른 공정경쟁에 관한 연구 (A Study on Fair Competition Forms under the Electronic Commerce of the New Competition Forms)

  • 강이수
    • 한국중재학회지:중재연구
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    • 제15권1호
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    • pp.179-206
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    • 2005
  • The development of information & telecommunication technology and internet-based electronic commerce helps to create a new economic environment. Such an economic environment requires the companies to change themselves, while providing unlimited potential and opportunities to them. Thus, in order to help the companies engaged in a fair and free competition in the electronic market, a fair competition policy needs to be designed and operated. The electronic commerce has not only promote the competition but also impede it. The electronic commerces tend to violate the fair trade than the conventional commerces in terms of differentiation, monopoly, conference, limited competition and intellectual property rights, schumpeterian competition, Alliance competition. With such basic concepts in mind, this study was aimed at reviewing the economic effects of the electronic commerce in the market and addressing the problems involving the application of the fair trade code to the electronic commerce, and thereby, suggesting the insights into our fair competition policy and reform measures.

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PLD 및 MOD법으로 제조된 2세대 HTS 선재의 전자기 특성 (Electromagnetic properties of HTS coated conductors fabricated by PLD and MOD)

  • 오상수;황선역;송규정;강석일;하동우;고락길;박찬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.65-68
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    • 2004
  • A lot of R&D efforts are being concentrated on the development of high performance HTS coated conductors(CC). Unlike the HTS Bi-2223 tape, a variety of processes have been tried to fabricate CC tapes. PLD and MOD are believed to be very effective methods, and high critical currents of long length CC tape have been reported. In this study, we prepared two kinds of YBCO CCs to evaluate electromagnetic property. One is YBCO tape deposited on IBAD template by PLD and the other is AMSC's MOD CC tape Critical current (Ic) in magnetic fields, its angular dependency, and n-value were measured and analyzed. Magnetic field property of Ic was appeared to be different due the fabrication process. MOD tape showed higher in-field property, n-value of both PLD and MOD tapes exponentially decreased with magnetic field. MOD tape showed higher n-value in whole magnetic fields.

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플라즈마 표면처리에 따른 고분자절연재료의 표면개질 (Surface Modification of Polymer Insulator by Plasma Surface Treatment)

  • 임경범;황명환;이백수;유도현;육재호;김형권;임헌찬;박강식;이덕출
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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    • pp.31-35
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    • 2002
  • It is hard to expect excellent electrical, mechanical and chemical properties from most of the composite materials presently used as insulators due to insufficient wettability property caused by the difference of interfacial properties between the matrix material and the reinforcer. Therefore, various interfacial coupling agents have been developed to improve the interfacial properties of composite materials. But if the wettable coupling agents are used outdoor for a long time, change in quality takes place in the coupling agents themselves, bringing about deterioration of the properties of the composite materials. In this study, composite materials were put to dry interfacial treatment by use of plasma technology. It has been presented that the optimum parameters for the best wettability of the samples at the time of generation of plasma were oxygen atmosphere, 0.1 torr of system pressure, 100 W of discharge power, and 3 minutes of discharge time. Also, the surface resistance rate and dielectric property were improved.

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탄소계 박막의 성장과 특성에 대한 나노 Buffer Layer의 영향 (Effect of Nano Buffer Layer on Property and Growth of Carbon Thin Film)

  • 류정탁
    • 한국전기전자재료학회논문지
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    • 제16권1호
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    • pp.53-59
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    • 2003
  • Using Platinum-silicide (PtSi) formed between silicon substrate and carbon film, we have improved the field emission of electrons from carbon films. Pt films were deposited on n-Si(100) substrates at room temperature by DC sputter technique. After deposition, these PtSi thin films were annealed at 400 ~ $600^{\circ}C$ in a vacuum chamber, and the carbon films were deposited on those Pt/Si substrates by laser ablation at room temperature. The field emission property of C/Pt/Si system is found to be better than that of C/Si system and it is showed that property was improved with increasing annealing temperature. The reasons why the field emission from carbon film was improved can be considered as follows, (1)the resistance of carbon films was decreased due to graphitization, (2)electric field concentration effectively occurred because the surface morphology of carbon film deposited on Pt/si substrates with rough surface, (3)it is showed that annealing induced reaction between Pt film and Si substrate, as a consequence that the interfacial resistance between Pt film and Si substrate was decreased.

화학 기계적 연마에 의한 리튬 니오베이트의 광학 특성에 관한 연구 (Study on Optical Properties of Lithium niobate using Chemical Mechanical Polishing)

  • 정석훈;김영진;이현섭;정해도
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.121-122
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    • 2008
  • Lithium Niobate (LN:LiNbO3) is a compound of niobium, lithium and oxygen. The characteristics of LN are piezoelectricity, ferroelectricity and photoelectricity, and which is widely used in surface acoustic wave (SAW). To manufacture LN device, the LN surface should be a smooth surface and defect-free because of optical property, but the LN material is processed difficult by traditional processes such as grinding and mechanical polishing (MP) because of its brittleness. To decrease defects, chemical mechanical polishing (CMP) was applied to the LN wafer. In this study, the suitable parameters scuh as pressure and relative velocity, were investigated for the LN CMP process. To improve roughness, the LN CMP was performed using the parameters that were the highest removal rate among process parameters. And, evaluation of optical property was performed by the optical reflectance and non-linear characteristic.

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Bi-2223/Ag 고온초전도 선재의 전처리에 따른 가공성 및 초전도 특성 (The effect of pre-treatment on superconducting property and deformation of Bi-2223/Ag tapes.)

  • 하홍수;이동훈;최정규;황선역;양주생;김상철;하동우;오상수;권영길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 춘계학술대회 논문집 초전도 자성체 연구회
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    • pp.25-29
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    • 2003
  • Pre-treatment of Bi-2223/Ag tapes has been investigated to improve the superconducting property and grain alignment. However, rolling deformability of Bi-2223/Ag wires was degraded by the breakage of Ag alloy sheath after pre-treatment. Various pre-treatment conditions were tried to prevent the problem of sliver sheath and improve the superconducting property of Bi-2223/Ag tapes. Filament precursor of Bi-2223/Ag tapes was modified to be textured easily during main sintering by the optimum pre-treatment with low oxygen pressure and up to $800^{\circ}C$. Critical current was also increased up to 20% than that of no pre-treated tape.

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SrBi2Ta2O9SiN/Si 구조를 이용한 MFISFET의 제작 및 특성 (Fabrication and Properties of MFISFET using SrBi2Ta2O9SiN/Si Structures)

  • 김광호
    • 한국전기전자재료학회논문지
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    • 제15권5호
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    • pp.383-387
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    • 2002
  • N-channel metal-ferroelectric-insulator-semiconductor field-effect-transistors (MFISFET's) by using $SrBi_2Ta_2O_9$/Silicon Nitride/Si (100) structure were fabricated. The fabricated devices exhibit comfortable memory windows, fast switching speeds, good fatigue resistances, and long retention times that are suitable for advanced ferroelectric memory applications. The estimated switching time and polarization ($2P_r$) of the fabricated FET measured at applied electric field of 376 kV/cm were less than 50 ns and about 1.5 uC/$\textrm{cm}^2$, respectively. The magnitude of on/off ratio indicating the stored information performance was maintained more than 3 orders until 3 days at room temperature. The $I_DV_G$ characteristics before and after being subjected to $10^11$ cycles of fatigue at a frequency of 1 MHz remained almost the same except a little distortion in off state.

IMPLEMENTATION OF STRUCTURAL DIAGRAM FOR INTELLECTUAL PROPERTY MANAGEMENT AND PROTECTION(IPMP)

  • Park, Jung-Hee;Lee, Ki-Dong;Lee, Sang-Jae
    • 한국디지털정책학회:학술대회논문집
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    • 한국디지털정책학회 2004년도 International Conference on Digital Policy & Management
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    • pp.435-448
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    • 2004
  • While Internet promises ubiquitous access, it also creates a fundamental challenge to the traditional ownership toward digital assets traded in e-commerce market. Sharing digital information freely through shared networks leads to many untapped business opportunities, but uncontrolled digital asset transaction undermines many electronic business models. Thus, in this Internet age, proper protection and safe delivery of Intellectual Property (IP) and its representation as digital assets would be a crucial ingredient of building trust in upcoming e-business environment. In this paper, we give a general structural diagram of Intellectual Property Management and Protection (IPMP) and implement an IPMP prototype based on the RSA encryption algorithm and XrML (eXtensible rights Markup Language) WORK tags to show how proper protection and safe delivery of the intellectual property is achieved. This study concludes that IPMP mechanism may contribute significantly to the volume and quality of e-commerce market.

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IPS 셀의 전압보유율 및 잔류 DC 특성에 관한 연구 (A Study on the Voltage Holding Ratio and Residual DC Property in the IPS Cell)

  • 전용제;김향율;서대식;김재형;남상희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.174-177
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    • 2001
  • The voltage holding ratio (VHR) and Residual DC property in the in-plane switching (IPS) cell was studied Several IPS cells which have different concentrations of cynao liquid crystals (LCs) and different resistivities of fluorine LCs were fabricated VHR and residual DC voltage in the IPS cells using the capacitance-voltage (C-V) hysteresis method was measured. We found that the VHR of the IPS cell was decreasing with increasing concentration of cyano LC. The residual DC voltage of the IPS cell was decreasing with increasing concentration of cyano LCs. We suggest that the high polarity of cyano LC helps reducing the residual DC voltage.

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