• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.115-121
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• 2013

We fabricated thin film transistors (TFTs) using TiInZnO(TiIZO) thin films as active channel layer. The thin films of TiIZO were deposited at room temperature by RF-magnetron co-sputtering system from InZnO(IZO) and Ti targets. We examined the effects of titanium addition by X-ray diffraction, X-ray photoelectron spectroscopy and the electrical characteristics of the TFTs. The TiIZO TFTs were investigated according to the radio-frequency power applied to the Ti target. We found that the transistor on-off currents were greatly influenced by the composition of titanium addition, which suppressed the formation of oxygen vacancies, because of the stronger oxidation tendency of Ti relative to that of Zn or In. A optimized TiIZO TFT with rf power 40W of Ti target showed good performance with an on/off current ratio greater than $10^5$, a field-effect mobility of 2.09 [$cm^2/V{\cdot}s$], a threshold voltage of 2.2 [V] and a subthreshold swing of 0.492 [V/dec.].

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.70-77
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• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

• Journal of Korea Multimedia Society
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• v.7 no.2
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• pp.223-230
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• 2004

A shooting game is all game genres that hit targets through shooting. It include a lot of genres from a flying shot of game room to a personal shooting action game. In this point, a shooting game was regarded it as the origin of all game and it was developed from the early days of game. At present we can meet it in an electronic game room or personal computer, and mobile phone etc.. The popularity of shooting game caused to take aim by simple system, interface, and speedy play. Also it was enticed everyone to enjoy it easily. A shooting games is worked from old like ways until recently and a process of playing game is intuitive than another game. Therefore it popular with a PC player as well as persons of all levels. Beginners can train this game easily through direction such as control way of object, advent way of enemy aircraft and scroll way of background. But as an usability of working and controlling game, beginners of game development can pass over a shooting sense that shout and hit basically. And after design, they will feel that cannot convey realistic effect and thrill etc.. At a result, hitting sense happens to graphic elements and sound. Therefore a measure of effect on these elements is started from analysis of good shooting game. This study was to focus on the advance effect of hitting sense in shooting game through analysis centered for 'the Beetlewing' and '1945 Plus'.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.671-678
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• 2001

All solid-state thin film micro supercapacitor, which consists of $RuO_2$/LiPON/$RuO_2$ multi layer structure, was fabricated on Pt/Ti/Si substrate using a $RuO_2$ electrode. Bottom $RuO_2$ electrode was grown by dc reactive sputtering system with increasing $O_2/[Ar+O_2]$ ratio at room temperature, and a LiPON electrolyte film was subsequently deposited on the bottom $RuO_2$ electrode at pure nitrogen ambient by rf reactive sputtering system. Room temperature charge-discharge measurements based on a symmetric $RuO_2$/LiPON/$RuO_2$ structure clearly demonstrates the cyclibility dependence on the microstructure of the $RuO_2$ electrode. Using both glancing angle x-ray diffraction (GXRD) and transmission electron microscopy (TEM) analysis, it was found that the microstructure of the $RuO_2$ electrode was dependent on the oxygen flow ratio. In addition, x- ray photoelectron spectroscopy(XPS) examination shows that the Ru-O binding energy is affected by increasing oxygen flow ratio. Furthermore, TEM and AES depth profile analysis after cycling demonstrates that the interface layer formed by interfacial reaction between LiPON and $RuO_2$ act as a main factor in the degradation of the cyclibility of the thin film micro-supercapacitor.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.346-351
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• 2012

$Li_{1+x}Al_xTi_{2-x}(PO_4)_3$(LATP) is a promising solid electrolyte for all-solid-state Li ion batteries. In this study, LATP is prepared through a sol-gel method using relatively the inexpensive reagents $TiCl_4$. The thermal behavior, structural characteristics, fractured surface morphology, ion conductivity, and activation energy of the LATP sintered bodies are investigated by TG-DTA, X-ray diffraction, FE-SEM, and by an impedance method. A gelation powder was calcined at $500^{\circ}C$. A single crystalline phase of the $LiTi_2(PO_4)_3$(LTP) system was obtained at a calcination temperature above $650^{\circ}C$. The obtained powder was pelletized and sintered at $900^{\circ}C$ and $1000^{\circ}C$. The LTP sintered at $900{\sim}1000^{\circ}C$ for 6 h had a relatively low apparent density of 75~80%. The LATP(x = 0.3) pellet sintered at $900^{\circ}C$ for 6 h was denser than those sintered under other conditions and showed the highest ion conductivity of $4.50{\times}10^{-5}$ S/cm at room temperature. However, the ion conductivity of LATP (x = 0.3) sintered at $1000^{\circ}C$ decreased to $1.81{\times}10^{-5}$ S/cm, leading to Li volatilization and abnormal grain growth. For LATP sintered at $900^{\circ}C$ for 6 h, x = 0.3 shows the lowest activation energy of 0.42 eV in the temperature range of room temperature to $300^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.174-174
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• 2000

A strong antiferromagnetic coupling in Fe/Si multilayered films (MLF) had been recently discovered and much consideration has been given to whether the coupling in the Fe/Si MLF system has the same origin as the metal/metal MLF. Nevertheless, the nature of the interfacial ron silicide is still controversial. On one hand, a metal/ semiconductor structure was suggested with a narrow band-gap semiconducting $\varepsilon$-FeSi spacer that mediates the coupling. However, some features show that the nature of coupling can be well understood in terms of the conventional metal/metal multilayered system. It is well known that both magneto-optical (MO) and optical properties of a metal depend strongly on their electronic structure that is also correlated with the atomic and chemical ordering. In this study, the nature of the interfacial regions is the Fe/Si multilayers has been investigated by the experimental and computer-simulated MO and optical spectroscopies. The Fe/Si MLF were prepared by rf-sputtering onto glass substrates at room temperature with the number of repetition N=50. The thickness of Fe sublayer was fixed at 3.0nm while the Si sublayer thickness was varied from 1.0 to 2.0 nm. The topmost layer of all the Fe/Si MLF is Fe. In order to carry out the computer simulations, the information on the MO and optical parameters of the materials that may constitute a real multilayered structure should be known in advance. For this purpose, we also prepared Fe, Si, FeSi2 and FeSi samples. The structural characterization of Fe/Si MLF was performed by low- and high -angle x-ray diffraction with a Cu-K$\alpha$ radiation and by transmission electron microscopy. A bulk $\varepsilon$-FeSi was also investigated. The MO and optical properties were measured at room temperature in the 1.0-4.7 eV energy range. The theoretical simulations of MO and optical properties for the Fe/Si MLF were performed by solving exactly a multireflection problem using the scattering matrix approach assuming various stoichiometries of a nonmagnetic spacer separating the antiferromagnetically coupled Fe layers. The simulated spectra of a model structure of FeSi2 or $\varepsilon$-FeSi as the spacer turned out to fail in explaining the experimental spectra of the Fe/Si MLF in both intensity and shape. Thus, the decisive disagreement between experimental and simulated MO and optical properties ruled out the hypothesis of FeSi2 and $\varepsilon$-FeSi as the nonmagnetic spacer. By supposing the spontaneous formation of a metallic ζ-FeSi, a reasonable agreement between experimental and simulated MO and optical spectra was obtained.

• Journal of the Korean Magnetics Society
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• v.20 no.3
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• pp.106-113
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• 2010

In order to get the precise blood pressure and pulse number in the cuffless status, the wrist wearable pulsimeter with a portable and small size apparatus using by Hall device is developed. The regression analysis of the pulse wave measured by the testing product of pulsimeter is conducted two equations of the blood pressure algorithm. The estimated values of blood pressure obtained by the cuffless pulsimeter during 5 s are compared with the practical values measured by electronic or mercury liquid blood pressure meters. The standard deviation of the estimated value and the practical value for the high blood pressure and the low blood pressure were 12.1 and 5.9, respectively, which have the neighborhood values of BP International Standard. The detail analysis of a pulse wave measured by cuffless wrist wearable detecting the changes of the magnetic field can be used to develop a new diagnostic algorithm of blood pressure applying for oriental medical apparatus like as the wrist wearable pulsimeter.

• Korean Journal of Health Education and Promotion
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• v.32 no.4
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• pp.79-92
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• 2015

Objectives: The purpose of this study is to identify the trends of jjok-bang research based on the perspective of Community-Based Participatory Research and Social Ecological Model and to provide information for future public health interventions, policy designs, and policy implementations. Methods: Studies used in the systematic review are published from 1999 to 2014 and searched using key words such as 'jjok-bang' and 'single room occupancy' using domestic and international electronic databases. However, there were no studies from abroad published during this period. Search in domestic databases such as KCI, KISS, RISS generated 119 studies. In this paper, 20 cases which meet the criteria of the systematic review were included in the final analysis. Results: The contents of research included are the life of jjok-bang inhabitants(9 cases), the demand for welfare services(4 cases) and welfare need(2 cases), mental health(1 cases), and the history of jjok-bang formation(4 cases). Fourteen cases of empirical study were analyzed focusing Community-Based Participatory Research and Social Ecological Model. Some of research was carried out forming a partnership with various community partners and this trend increased since 2008. There are high frequency of intrapersonal level and interpersonal level studies. However, studies looking at the organization, community or policy level were relatively few. Conclusions: Future studies of jjok-bang area should consider the various social determinants which affect the health delivery system, community organization and policies, as well as individual or community level.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.70.1-70.1
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• 2012

In-situ X-ray photoelectron spectroscopy (XPS) and infrared (IR) spectroscopy studies of SOFC cathode materials will be discussed in this presentation. The mixed conducting perovskites (ABO3) containing rare and alkaline earth metals on the A-site and a transition metal on the B-site are commonly used as cathodes for solid oxide fuel cells (SOFC). However, the details of the oxygen reduction reaction are still not clearly understood. The information about the type of adsorbed oxygen species and their concentration is important for a mechanistic understanding of the oxygen incorporation into these cathode materials. XPS has been widely used for the analysis of adsorbed species and surface structure. However, the conventional XPS experiments have the severe drawback to operate at room temperature and with the sample under ultrahigh vacuum (UHV) conditions, which is far from the relevant conditions of SOFC operation. The disadvantages of conventional XPS can be overcome to a large extent with a "high pressure" XPS setup installed at the BESSY II synchrotron. It allows sample depth profiling over 2 nm without sputtering by variation of the excitation energy, and most importantly measurements under a residual gas pressure in the mbar range. It is also well known that the catalytic activity for the oxygen reduction is very sensitive to their electrical conductivity and oxygen nonstoichiometry. Although the electrical conductivity of perovskite oxides has been intensively studied as a function of temperature or oxygen partial pressure (Po2), in-situ measurements of the conductivity of these materials in contact with the electrolyte as a SOFC configuration have little been reported. In order to measure the in-plane conductivity of an electrode film on the electrolyte, a substrate with high resistance is required for excluding the leakage current of the substrate. It is also hardly possible to measure the conductivity of cracked thin film by electrical methods. In this study, we report the electrical conductivity of perovskite $La_{0.6}Sr_{0.4}CoO_{3-{\delta}}$ (LSC) thin films on yttria-stabilized zirconia (YSZ) electrolyte quantitatively obtained by in-situ IR spectroscopy. This method enables a reliable measurement of the electronic conductivity of the electrodes as part of the SOFC configuration regardless of leakage current to the substrate and cracks in the film.

• Journal of the Korean Ceramic Society
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• v.54 no.3
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• pp.211-216
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• 2017

ZnO nanopowder was synthesized using a relatively facile and convenient glycol process. ZnO nanopowder was successfully synthesized at temperatures as low as $125^{\circ}C$ using zinc acetate as the Zn source and 1,4-butanediol as the solvent. Then, the effects of water content on the growth process and morphological evolution of ZnO powders were investigated using 1,4-butanediol and water as binary solvent mixtures. Using pure 1,4-butanediol at a temperature above $125^{\circ}C$, the prepared hexagonal ZnO nanopowder exhibited a quasi-spherical shape with average crystalline size of approximately 30 - 50 nm. It is also demonstrated that the morphology of ZnO powders can be controlled by the addition of various water content in 1,4-butanediol. With increasing water content, the morphologies of the ZnO powders changed sequentially from quasi-spherical to hexagonal plate and pyramid, and finally to hexagonal prismatic with a pyramidal tip. A sharp peak centered at 384 nm in the UV region and a weak broad peak in the visible region between 450 and 700 nm were shown in the room temperature PL spectra of the ZnO synthesized using the glycol process, regardless of the addition of water, suggesting that ZnO nanopowders with the best crystallinity were obtained under these conditions.