• Title/Summary/Keyword: Electronic devices

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Deep red electrophosphorescent organic light-emitting diodes based on new iridium complexes

  • Gong, Doo-Won;Kim, Jun-Ho;Lee, Kum-Hee;Yoon, Seung-Soo;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1075-1078
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    • 2006
  • New iridium complex was synthesized and demonstrated a deep red light emission in organic light-emitting diodes (OLEDs). The maximum luminance of 8320 cd/m2 at 15 V and the luminance efficiency of 2.5 cd/A at 20 mA/cm2 were achieved. The peak wavelength of the electroluminescence was at 626 nm with the CIE coordinates of (0.69, 0.30), and the device also showed a stable color chromaticity with various voltages.

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Hole trapping in carbon nanotube-polymer composite organic light emitting diodes

  • Woo, H.S.;Czerw, R.;Carroll, D.L.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.1047-1052
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    • 2003
  • Controlling carrier transport in light emitting polymers is extremely important for their efficient use in organic opto-electronic devices [1]. Here we show that the interactions between single wall carbon nanotubes (SWNTs) and conjugated polymers can be used to modify the overall mobility of charge carriers within nanotube-polymer nanocomposites. By using a unique, double emitting-organic light emitting diodes (DE-OLEDs) structure. we have characterized the hole transport within electroluminescent nanocomposites (nanotubes in poly (m-phenylene vinylene-co-2,5-dioctoxy-p-phenylene) or PmPV). We have shown using this idea that single devices with color tunability can be fabricated. It is seen that SWNTs in PmPV are responsible for hole trapping, leading to shifts in the emission wavelengths. Our results could lead to improved organic optical amplifiers, semiconducting devices, and displays.

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Gate All Around Metal Oxide Field Transistor: Surface Potential Calculation Method including Doping and Interface Trap Charge and the Effect of Interface Trap Charge on Subthreshold Slope

  • Najam, Faraz;Kim, Sangsig;Yu, Yun Seop
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.5
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    • pp.530-537
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    • 2013
  • An explicit surface potential calculation method of gate-all-around MOSFET (GAAMOSFET) devices which takes into account both interface trap charge and varying doping levels is presented. The results of the method are extensively verified by numerical simulation. Results from the model are used to find qualitative and quantitative effect of interface trap charge on subthreshold slope (SS) of GAAMOSFET devices. Further, design constraints of GAAMOSFET devices with emphasis on the effect of interface trap charge on device SS performance are investigated.

Smart Phone Based Infrared Remote Controller without Restriction of Target Devices (대상 기기에 제한이 없는 스마트폰 기반의 적외선 리모컨)

  • Hwang, Seong-Jin;Lee, Mi-Hyun;Hong, Jeong-Pyo;Park, Tae-Geun;Kim, Yong-Seok
    • Journal of Industrial Technology
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    • v.34
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    • pp.27-32
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    • 2014
  • Infrared remote controllers are widely used in controlling electronic devices due to its simplicity and convenience. This paper presents a smart phone application unifying any infrared remote controllers. We can select a device from device list menu of the application. Any new device can be added easily by downloading the protocol file of the device from protocol file server. Remote controller protocol files are stored in audio file format, and the file related to a specific menu button is transmitted through the audio jack of smart phones. The protocol file server is a standard file server, and protocol files for various devices are collected by infrared receiver module. For smart phones without infrared facility, a small infrared module translating audio signal to infrared signal is applied.

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Electrical Properties of Silicone Gels due to the Curing Condition (경화조건에 따른 실리콘 젤의 전기적 특성)

  • 홍능표;이수원;홍진웅
    • Journal of the Korean Society of Safety
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    • v.15 no.1
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    • pp.86-92
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    • 2000
  • Recently, more advanced electronic elements become, they consume powerful and radiate more heat in devices. So the most suitable packaging technique is keenly needed. The most important purpose of packaging is to protect devices within a system for a long time and to prevent life of devices from external environments; floating ions such as humidity or sodium, and exposure from ultraviolet rays. In order to study the electrical properties of silicone gels often used as packing material due to the curing condition, volume resistivity and AC breakdown experiment are performed. Specimens are made up at several cured times and temperatures condition ; 0.5[H], 1[H] and 2[H] at 100[$^{\circ}C$], 125[$^{\circ}C$], 150[$^{\circ}C$], 160[$^{\circ}C$], 170[$^{\circ}C$] and 180[$^{\circ}C$]. It is confirmed that from volume resistivity experiment liquid silicone become get state at 90~100 [$^{\circ}C$] and cured specimen for 1~2[H] at 170[$^{\circ}C$] are superior in electrical properties.

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A New Structure of SOI MOSFETs Using Trench Mrthod (트랜치 기법을 이용한 SOI MOSFET의 전기적인 특성에 관한 연구)

  • Park, Yun-Sik;Sung, Man-Young;Kang, Ey-Goo
    • 한국컴퓨터산업교육학회:학술대회논문집
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    • 2003.11a
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    • pp.67-70
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    • 2003
  • In this paper, propose a new structure of MOFET(Metal-Oxide-Semiconductor Field Effect Transistor) which is widely application for semiconductor technologies. Eleminate the latch-up effect caused by closed devices when conpose a electronic circuit using proposed devices. In this device have a completely isolation structure, and advantage of leakage current elimination. Each independent devices are isolated by trench-well and oxide layer of SOI substrate. Using trench gate and self aligned techniques reduces parasitic capacitance between gate and source, drain. In this paper, we proposed the new structure of SOI MOSFET which has completely isolation and contains trench gate electrodes and SOI wafers. It is simulated by MEDICI that is device simulator.

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($LEXAN^{(R)}$ for Flexible OLED Display Technology

  • Yan, Min;Ezawa, Hiro
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.614-615
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    • 2005
  • The use of plastic substrates enables new applications, such as flexible display devices, and other flexible electronic devices, using low cost, roll-to-roll (R2R) fabrication technologies. One of the limitations of polymeric substrate in these applications is that oxygen and moisture rapidly diffuse through the material and subsequently degrade the electro-optical devices. GE Global Research (GEGR) has developed a plastic substrate technology comprised of a superior high-heat polycarbonate ($LEXAN^{(R)}$) substrate film and a unique transparent coating package that provides the ultrahigh barrier (UHB) to moisture and oxygen,chemical resistance to solvents used in device fabrications, and a high performance transparent conductor. This article describes the coating solutions for polycarbonate ($LEXAN^{(R)}$) films and its compatibility with OLED device fabrication processes.

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Flexible Ultra-high Gas Barrier Substrate for Organic Electronics

  • Yan, Min;Erlat, Ahmet Gun;Zhao, Ri-An;Scherer, Brian;Jones, Cheryl;Smith, David J.;McConnelee, Paul A.;Feist, Thomas;Duggal, Anil
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.445-446
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    • 2007
  • The use of plastic substrates enables new applications, such as flexible display devices, and other flexible electronic devices, using low cost, rollto-roll (R2R) fabrication technologies. One of the limitations of polymeric substrate in these applications is that oxygen and moisture rapidly diffuse through the material and subsequently degrade the electro-optical devices. GE Global Research (GEGR) has developed a plastic substrate technology comprised of a superior high-heat polycarbonate (LEXAN(R)) substrate film and a unique transparent coating package that provides the ultrahigh barrier (UHB) to moisture and oxygen, chemical resistance to solvents used in device fabrications, and a high performance transparent conductor. This article describes the coating solutions for polycarbonate (LEXAN(R)) films and its compatibility with OLED device fabrication processes.

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The Soft Recovery Pulse Width Modulation Quasi Resonant Converter with Revised Folding Snubber Network (개선된 폴딩 스너버 망을 이용하여 소프트하게 역 복귀하는 의사 공진형 펄스 폭 컨버터)

  • Chung, Jin-Kuk
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.47 no.1
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    • pp.62-66
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    • 2010
  • A new soft recovery pulse width modulation quasi resonant converter composed only passive devices snubber network is proposed. This passive devices snubber network is revised form of folding snubber network that suppressed the reverse recovery current of main rectify diode in PWM converter. It also makes the MOSFET switching devices operate in soft state. The efficient of the proposed converter is almost same level to that of the converter of active snubber type. The overall circuit is simple and easy to realized. Therefore, it is suitable to apply to middle range output power source.

Performance of an inverter refrigeration system with a change of expansion devices (인버터형 냉동시스템의 팽창장치 변경에 따른 성능특성)

  • 이용택;김용찬;박윤철;김민수
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.11 no.6
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    • pp.928-936
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    • 1999
  • An experimental study was performed to investigate characteristics of an inverter driven water-to-water refrigeration system with a variation of compressor frequencies and expansion devices. The frequency of a compressor varied from 30Hz to 75Hz, and performance of the systems applying three different expansion devices such as capillary tube, thermostatic expansion valve(TXV), and electronic expansion valve(EEV) were measured. The load conditions were altered by varying the temperature of the secondary fluid entering condenser and evaporator with a constant flow rate. When the test conditions were deviated from the standard value(rated value), TXV and EEV showed better performance than capillary tube due to optimum control of mass flow rate and superheat. In the present study, it was observed that the variable area expansion device had better performance than constant area expansion device in an inverter refrigeration system due to active control of flow area with a change of compressor frequency and load conditions.

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