• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.103-106
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• 1999

Organic electroluminescent devices (OELDs) have received a great deal of attention due to their potential application as full-color displays. Europium complexes are known as excellent red light-emitting materials for OELDs since they show intense photoluminescence at around 612 nm with a narrow spectral bandwidth. In this study, a novel curopium complex, Eu(TTA)$_3$(TPPO) was synthcsizcd and its photoluminescent and electroluminescent characteristics were investigated with a device structure of ITO/TPD/Eu(TTA)3(TPPO)/A1q$_{3}$ Al, where sharp emission at the wavelength of 615 nm has been observed. Details on the electrical properties of these structures will be also discussed.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.626-632
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• 1995

In this paper, The effect of the impedances in SNOSFET's memory devices has been developed. The effect of source and drain impedances measured by means of two bias resistances - field effect bias resistance by inner region, external bias resistance. The effect of the impedances by source and drain resistance shows the dependence of the function of voltages applied to the gate. It shows the differences of change in source drain voltage by means of low conductance state and high conductance state. It shows the delay of threshold voltages. The delay time of low conductance state and high conductance state by the impedances effect shows 3[.mu.sec] and 1[.mu.sec] respectively.

• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.119-122
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• 2015

Laser sealing with glass frits appears a promising technology for sealing various electronic devices (e.g., solar cells, displays) due to its several advantages. The purpose of this study is to understand the relationship between the composition of glasses and their laser-heating conditions. To allow glass to be sealed using laser heating, CuO was added to two different glass systems, in different amounts. The optical absorptivity of the glass samples was related directly to their CuO content. The laser-heating temperature and the CuO content exhibited a proportional relationship. Furthermore, the heating temperature increased linearly with the laser power used. From these results, we could determine the appropriate laser-heating conditions and CuO content for sealing electronic devices using laser-sealing technology.

• Transactions of the Korean Society of Mechanical Engineers
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• v.13 no.4
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• pp.726-733
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• 1989

Conduction heat transfer in heat spreaders with concentrated heat sources is analyzed by finite element method calculation and the results are compared to analytical solutions for simplified cases. The local temperature rise is dependent on the heat flux, thermal conductivity of the spreader material, and the contact size of the heat source. The effect of the adjacency of other heat sources is also examined.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.7
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• pp.1378-1384
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• 2011

In this paper, the electromagnetic shielding performance of a BiMODAL Tram is investigated by means of an electromagnetic analysis tool, called HFSS. For the purposed of doing this, first, three-dimensional finite element modeling for the tram including electronic devices and engine room is carried out. Then, for quantitatively assessing the electromagnetic shielding performance of the tram's body, concentration indexes for electric field magnitude and time-average stored electric energy are introduced. From numerical results, it is inferred that the tram's body can protect the electronic devices and engine room against external electromagnetic waves from 30 MHz to 100 MHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.137-140
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• 2001

To improve structural properties and induce higher conductivity, we have annealed emitting layer, The temperature condition was investigated by various experiment. To observe the surface morphology of emitting layer, measured the AFM and the X-ray diffraction pattern of P3HT film is shown. It is move to slightly low angles and diffraction peaks also become much sharper. After annealing of emitting layer, EL intensity and Voltage-current-luminance curve is better as compared with untreated. But PL intensity was decreased. It is known that by emission principal. After annealing of emitting layer, EL devices enhances the interface adhesion between the emissive polymer and Indium-tin-oxide electrode, which takes a critical role to improve the emitting properties of EL devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.243-246
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• 2001

In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effect and forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power devices and applicate to another power devices including IGBT, EST and etc.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.225-230
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• 1994

In this paper, we have fabricated short channel MOSFETs with these parameters to verify the validity of process parameters extraction by DTC method. The experimental results of fabricated short channel devices according to the optimal process parameters demonstrate good device characteristics such as good drain current-voltage characteristics, low body effects and threshold voltage of$\leq$+-.1.0V, high punch through and breakdown voltage of$\leq$12V, low subthreshold swing(S.S) values of$\leq$105mV/decade.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.16-19
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• 2000

Power transistors to be used in Power Integrated Circuits(PIC) are required to have low on resistance, fast switching speed, and high breakdown voltage. The lateral IGBTs(LIGBTs)are promising power devices for high voltage PIC applications, because of its superior device characteristics. In this paper, dual cathode LIGBT(DCIGBT) for high voltage is presented. We have verified the effectiveness of high blocking voltage in the new device by using two dimensional devices simulator. We have analyzed the forward blocking characteristics , the latch up performance and turn off characteristics of the proposed structure. Specially, we have focused forward blocking of LIGBT. The forward blocking voltage of conventional LIGBT and the proposed LIGBT are 120V and 165V, respectively. . The forward blocking characteristics of the proposed LIGBT is better than that of the conventional LIGBT. This forward blocking comparison exhibits a 1.5 times improvement in the proposed LIGBT.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.38-43
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• 1996

A coprecipitation method was used for preparing Ca and Pt doped $SnO_2$ fine powder. Components of the powder were investigated by XPS and SIMS. Crystallite size and specific surface area were investigated by TEM, XRD, and BET analysis. $SnO_2$(Ca)/Pt based thick film devices were prepared by a screen printing technique for methane gas detection. Then sensing characteristics of the devices were investigated. As Ca and Pt added, the crystal growth of $SnO_2$ was suppressed during calcining and sintering, and the sensitivity of $SnO_2$(Ca)/Pt thick film to methane gas was enhanced. For the Pt doped $SnO_2$ fine particle, the thick film device shows sensitivity of about 83% to 2000 ppm methane gas at an operating temperature of >$400^{\circ}C$.