• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.114-114
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• 2009

ZnO has received considerable attention due to its potential applicability to optoelectronic devices such as ultraviolet-light emitting diodes (UVLEDs) and laser diodes (LDs). As well known, however, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency. Recently, nonpolar ZnO has been studied to avoid such a polarization effect. In order to realize applications of nonpoar ZnO-based films to LEDs, growth of high quality alloys for quantum well structures is one of the important tasks that should be solved. $Mg_xZn_{1-x}O$ and $Cd_xZn_{1-x}O$ is ones of most promising alloys for this application because the alloys of ZnO with MgO and CdO provide a wide range of band-gap engineering spanning from 2.4 to 7.8 eV. In this study, we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios. The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). With the relatively low Mg/Zn flux ratios, a typical striated anisotropic surface morphology which was generally observed from the nonpolar (11-20) ZnO film on r-plane sapphire substrates. By increasing the Mg/Zn flux ratio, however, additional islands were appeared on the surface and finally the surface morphology was entirely changed, which was generally observed for the (0001) polar ZnO films by losing the striated morphology. Investigations by X-ray $\Theta-2{\Theta}$ diffraction revealed that (0002) and (10-11) ZnO planes are appeared in $Mg_xZn_{1-x}O$ films by increasing the Mg/Zn flux ratio. Further detailed investigation by transmission electron microscopy (TEM) and photoluminescence (PL) will be discussed.

• Journal of Digital Convergence
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• v.18 no.6
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• pp.53-63
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• 2020

Electronic financial transactions are also actively increasing due to the rapid spread of information communication media such as the Internet, smart devices, and IoT, but as a derivative by-product, threats of financial security such as leakage of various personal information and hacking are also increasing. Therefore, the importance of financial security against this is increasing, but in Korea, financial security technology is relatively insufficient compared to advanced countries in the field of financial security, such as Active-X. Therefore, this study aims to present the major development direction in the domestic financial security field by comparing key technology trends with IPC classification frequency analysis, keyword frequency analysis, and keyword network analysis based on domestic and foreign financial security-related patent data. In conclusion, it seems that recent domestic and foreign trends have focused on the development of related technologies according to the development of smart device-based electronic financial services. Accordingly, it is intended to be used as the basis data for technology development of financial security by mapping the trend of financial security research trend and technology trend analysis through thesis data analysis that reflects the research of the preceding aspect as the technology of commercialization in the future.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.1
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• pp.211-218
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• 2014

In this paper the magnetic field properties of the soft magnetic alloys (Fe-Si-Cr and Fe-Ni-Cr) are studied in advance for the development of electro-magnetic shielding films, which could be used in the IT Devices (NFC, mobile phone, computer, etc.).As a result each of the selected soft magnetic alloy melts of the corresponding compositions is water-dispersed into the disk-shaped grains, which are soaked in polymer resin, and of which two types of thin film of thickness 0.1mm and 1mm are made by passing through the heating calendar roller. And the magnetic permeability and the shielding effectiveness of the polymer films containing the soft magnetic alloy grains are measured over the whole frequency bands from the low frequency to 10GHz. Before the experiments of the soft magnetic alloy, a special equation is proposed to estimate the permeability of the alloy, and the equation is verified with the pre-published data by MATLAB, and from which the most optimal compositions can be decided. And the SE(Shielding Effectiveness) of the polymer films containing the soft magnetic alloy grains is simulated by the HFSS.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.11
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• pp.755-759
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• 2016

The use of heat pipes in the electronic telecommunication field is increasing. Among the various types of heat pipes, the thin flat heat pipe has relatively high applicability compared with the circular heat pipe in the electronic packaging application. The thin flat heat pipe based on extrusion fabrication has a simple capillary wick structure consisting of rectangular cross sectional grooves on the inner wall of the pipe. Although the groove serves as a simple capillary wick, and many such grooves are provided on the inner wall, it is difficult for the grooves to realize a sufficiently high capillary force. In the present study, a thin flat heat pipe with a wire bundle was developed to overcome the drawback of poor capillary force in the thin flat heat pipe with grooves, and was evaluated by conducting tests. In the performance test, the thin flat heat pipe with the wire bundle showed a lower thermal resistance of approximately 3.4 times, and a higher heat transfer rate of approximately 3.8 times with respect to the thin flat heat pipe with grooves as the capillary wick respectively. The possibility of using the wire bundle as a capillary wick in the heat pipe was validated in the present study; further study for commercializing this concept will be taken up in the future.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.11
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• pp.114-122
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• 2016

EIS (Electro interstitial scan) is a non-invasive and simple method to find the physio-pathological information inferred by electric current response with respect to low direct current applied between remote sites of the body. Although a few EIS-based devices for diagnosing diabetes were commercialized, they were not successful in offering clinical validity nor in confirming diagnostic principle. In this study, we measured the voltage responses of diabetic patients and normal subjects with a commercialized EIS device to test the usefulness of EIS in screening diabetes. For this purpose, voltage was measured between pairs of electrodes contacted at both palm, both soles of the feet and left and right forehead above both eyes. After feature extraction of voltage signals, the AUC (area under the curve) between the two groups was calculated and we found that seven variables were appropriately shown above 60% of accuracy. In addition, we applied the k-NN (k-nearest neighbors) method and found that the accuracy of classification between the two groups reached the accuracy of 76.2%. This result implies that the voltage response analysis based on EIS has potential as a diabetics screening method.

• Journal of the Korean Society of Clothing and Textiles
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• v.33 no.6
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• pp.893-903
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• 2009

Smart clothing represents the future of both the textile/clothing industry and electronic industry and has an effort to make electronic devices a genuine part of our daily life. The researches about technologies innovation and application of smart clothing can be found in previous studies. But consumer researches about perception or attitude toward smart clothing can be hardly found. Therefore, we proposed a conceptual framework that explores the impact of perceived risks on perceived attributes to adopt smart clothing. In addition, we compared differences of this framework among three counties. Korea, U.S. and Spain. Based on the literature review and hypotheses development, a research model was constructed. After data analysis using Amos 7.0, the results can be concluded as following: First, the influences of psychological risk among Korea, U.S. and Spain are same. Psychological risk has negative effect on relative advantage and complexity, but has positive effect on trialability. Second, loss risk was found to have nothing to do with relative advantage. But it negatively influences complexity for Korean consumers and positively influences trialability for both Korean and American consumers. Third, the influences of performance risk for different consumers are different. At last, based on our discussion, some implications were also concluded.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.313-313
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• 2009

OLED 소자는 직접발광, 광시야각, 그리고 빠른 응답속도 때문에 동영상에 적합하여 최근 각광받고 있는 디스플레이장치 중의 하나이다. OLED 소자의 양극재료로는 높은 광투과율과 $\sim10^{-4}{\Omega}\;cm$ 수준의 낮은 전기 비저항을 갖는 ITO (Sn-doped $In_2O_3$)가 널리 사용되고 있다. 하지만 원료 물질인 인듐의 수급량 부족으로 인한 문제점과 독성, 저온증착의 어려움, 스퍼터링시 음이온 충격에 의한 막 손상으로 저항의 증가의 문제점이 있고, 또한 액정디스플레이의 투명전극으로 사용될 경우 $400\;^{\circ}C$정도의 높은 온도와 수소 플라즈마 분위기에서 장시간 노출 시 열화로 인한 광학적 특성변화가 문제가 된다. 반면에 Al이 도핑 된 ZnO (AZO)박막은 넓은 밴드갭 (3.37eV)와 400nm에서 700nm 사이의 가시광 영역에서 80% 이상의 우수한 투과성을 지니고 있다. 특히 Al이 도핑된 ZnO는 박막의 전기적 특성이 크게 향상되어 디스플레이나 태양전지로의 응용이 가능하다. 또한 비교적 낮은 비용과 플라즈마에서의 안정성, 무독성, 그리고 전기전도성과 같은 많은 이점이 있다. 그 결과 AZO 박막은 ITO기판을 대안하는 지원물질로 활발히 연구가 진행되고 있다. 본 연구에서는 TCO 박막의 면 저항과 표면 거칠기에 따른 OLED 소자의 특성을 분석하였다. ITO와 AZO 박막은 챔버 내 다양한 가스 분위기(Ar, Ar+$O_2$ and Ar+$H_2$)에서 R.F Magnetron Sputtering방법으로 증착하였다. TCO 박막의 구조적인 이해를 돕기 위해서 X-ray diffraction 과 FESEM으로 분석하였다. 광학적 투과도와 박막의 두께는 ultraviolet spectrophotometer (Varian, cary-500)와 surface profile measurement system으로 각각 측정하였다. 면저항 charge carrier 농도, 그리고 TCO 박막의 이동도와 같은 전기적특성은 four-point probe와 hall effect measurement(HMS-3000)로 각각 측정하였다. TCO 박막의 표면 거칠기 조절을 위해 photo lithography 공정을 사용하여 TCO 박막을 화학에칭 하였다. 미세사이즈 패턴 마스크가 사용되었으며 에칭의 깊이는 에칭시간에 따라 조절하였다. TCO 박막의 표면 형태는 FESEM과 AFM으로 관찰하였다. 투명전극으로 사용되는 ITO 및 AZO 기판 상용화를 위해 ITO 및 AZO 기판 위에 ${\alpha}$-NPB, Alq3, LiF, Al 의 순서로 증착 및 패터닝함으로써 OLED 소자를 제작하였다. 전류밀도와 전압 그리고 발광휘도와 전압과 같은 전기적 특성은 spectrometer(minolta CS-1000A)를 이용하여 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.269-270
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• 2009

The biased vertical alignment (BVA) liquid crystal (LC) mode shows a has a distinct advantage of lower manufacture cost due to the elimination of a lithographic process step to form either ITO-patterning or protrusions on the color-filter substrates. However, those devices have complex voltage conditions which is the respective induce voltage on common electrode, pixel electrode and bias electrode when positive and negative frame. In order to overcome the complex voltage condition, the pretilt angles is controlled by photo polymerization of the UV-curable reactive mesogen (RM). According to our studies, voltages to the cell are critical to achieve an optimized surface-modified quality BVA (Q-BVA) mode which provides the well defined reorientation of the LCs with respect to an electric field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.311-311
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• 2009

Carbon nanotubes (CNTs) belong to an ideal material for field emitters because of their superior electrical, mechanical, and chemical properties together with unique geometric features. Several applications of CNTs to field emitters have been demonstrated in electron emission devices such as field emission display (FED), backlight unit (BLU), X-ray source, etc. In this study, we fabricated a CNT cathode by using filtration processes. First, an aqueous CNT solution was prepared by ultrasonically dispersing purified single-walled CNTs (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). The aqueous CNT solution in a milliliter or even several tens of micro-litters was filtered by an alumina membrane through the vacuum filtration, and an ultra-thin CNT film was formed onto the alumina membrane. Thereafter, the alumina membrane was solvated by acetone, and the floating CNT film was easily transferred to indium-tin-oxide (ITO) glass substrate in an area defined as 1 cm with a film mask. The CNT film was subjected to an activation process with an adhesive roller, erecting the CNTs up to serve as electron emitters. In order to measure their luminance characteristics, an ITO-coated glass substrate having phosphor was employed as an anode plate. Our field emitter array (FEA) was fairly transparent unlike conventional FEAs, which enabled light to emit not only through the anode frontside but also through the cathode backside, where luminace on the cathode backside was higher than that on the anode frontside. Futhermore, we added a reflecting metal layer to cathode or anode side to enhance the luminance of light passing through the other side. In one case, the metal layer was formed onto the bottom face of the cathode substrate and reflected the light back so that light passed only through the anode substrate. In the other case, the reflecting layer coated on the anode substrate made all light go only through the cathode substrate. Among the two cases, the latter showed higher luminance than the former. This study will discuss the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the either side.