• Applied Science and Convergence Technology
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• v.23 no.4
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• pp.192-199
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• 2014

The electronic property of graphene was investigated by hydrazine treatment. Hydrazine ($N_2H_4$) highly increases electron concentrations and up-shifts Fermi level of graphene based on significant shift of Dirac point to the negative gate voltage. We have observed contact resistance and channel length dependent mobility of graphene in the back-gated device after hydrazine monohydrate treatment and continuously monitored electrical characteristics under Nitrogen or air exposure. The contact resistance increases with hydrazine-treated and subsequent Nitrogen-exposed devices and reduces down in successive Air-exposed device to the similar level of pristine one. The channel conductance curve as a function of gate voltage in hole conduction regime keeps analogous value and shape even after Nitrogen/Air exposure specially whereas, in electron conduction regime change rate of conductance along with the level of conductance with gate voltage are decreased. Hydrazine could be utilized as the highly effective donor without degradation of mobility but the stability issue to be solved for future application.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.598-598
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• 2012

Rechargeable lithium-ion batteries have been considered the most attractive power sources for mobile electronic devices. Although graphite is widely used as the anode material for commercial lithium-ion batteries, it cannot fulfill the requirement for higher storage capacity because of its insufficient theoretical capacity of 372 mAh/g. For the sake of replacing graphite, Sn-based materials have been extensively investigated as anode materials because they can have much higher theoretical capacities (994 mAh/g for Sn, 875 mAh/g for SnO, 783 mAh/g for $SnO_2$). However, these materials generate huge volume expansion and shrinkage during $Li^+$ intercalation and de-intercalation and result in the pulverization and cracking of the contact between anode materials and current collector. Therefore, there have been significant efforts of avoiding these drawbacks by using nanostructures. In this study, we present the CVD growth of SnO branched nanostructures on Cu current collector without any binder, using a combinatorial system of the vapor transport method and resistance heating technique. The growth mechanism of SnO branched nanostructures is introduced. The SnO nanostructures are evaluated as an anode for lithium-ion battery. Remarkably, they exhibited very high discharge capacities, over 520mAh/g and good coulombic efficiency up to 50 cylces.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.26-26
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• 2011

Self-assembled monolayers (SAMs) prepared by sulfur-containing organic molecules on metal surfaces have drawn much attention for more than two decades because of their technological applications in wetting, chemical and biosensors, molecular recognition, nanolithography, and molecular electronics. In this talk, we will present self-assembly mechanism and two-dimensional (2D) structures of various organic thiol SAMs on Au(111), which are mainly demonstrated by molecular-scale scanning tunneling microscopy (STM) observation. In addition, we will provide some idea how to control 2D molecular arrangements of organic SAMs. For instance, the formation and surface structure of pentafluorobenzenethiols (PFBT) self-assembled monolayers (SAMs) on Au(111) formed from various experimental conditions were examined by means of STM. Although it is well known that PFBT molecules on metal surfaces do not form ordered SAMs, we clearly revealed for the first time that adsorption of PFBT on Au(111) at $75^{\circ}C$ for 2 h yields long-range, well-ordered self-assembled monolayers having a $(2{\times}5\sqrt{13})R30^{\circ}$ superlattice. Benzenethiols (BT) SAMs on gold usually have disordered phases, however, we have clearly demonstrated that the displacement of preadsorbed cyclohexanethiol self-assembled monolayers (SAMs) on Au(111) by BT molecules can be a successful approach to obtain BT SAMs with long-range ordered domains. Our results will provide new insight into controlling the structural order of BT or PFBT SAMs, which will be very useful in precisely tailoring the interface properties of metal surfaces in electronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.433-433
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• 2011

Since the concept of graphene was established, it has been intensively investigated by researchers. The unique characteristics of graphene have been reported, the graphene attracted a lot of attention for material overcomes the limitations of existing semiconductor materials. Because of these trends, economical fabrication technique is becoming more and more important topic. Especially, the epitaxial growth method by sublimating the silicon atoms on Silicon carbide (SiC) substrate have been reported on the mass production of high quality graphene sheets. Although SiC exists in a variety of polytypes, the 3C-SiC polytypes is the only polytype that grows directly on Si substrate. To practical use of graphene for electronic devices, the technique, forming the graphene on 3C-SiC(111)/Si structure, is much helpful technique. In this paper, we report on the growth of graphene on 3C-SiC(111) surface. To investigate the morphology of formed graphene on the 3C-SiC(111) surface, the radial distribution function (RDF) was calculated using molecular dynamics (MD) simulation. Through the comparison between the kinetic energies and the diffusion energy barrier of surface carbon atoms, we successfully determined that the graphitization strongly depends on temperature. This graphitization occurs above the annealing temperature of 1500K, and is also closely related to the behavior of carbon atoms on SiC surface. By analyzing the results, we found that the diffusion energy barrier is the key parameter of graphene growth on SiC surface.

• Transactions of the Korean Society of Automotive Engineers
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• v.24 no.6
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• pp.668-676
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• 2016

The accelerated convergence of automobiles and ICT has led to an increase in in-vehicle electronic devices designed to enhance the safety and convenience of drivers. Consequently, the information presentation on in-vehicle display systems for drivers and passengers need to be taken into account in order to guarantee driving stability while satisfying the needs of UX-based design users. This study compared and evaluated requirements for information items shown on in-vehicle displays regarding driving safety and convenience by groups according to driving career. A total of 38 information items related to safety and convenience that can be displayed while driving and pulling over were collected. Their level of necessity was tested and evaluated by 234 drivers. Using the results, we conducted a comparative analysis on the requirements for information presentation on in-vehicle display systems by groups according to driving career.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.56-56
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• 2018

Transparent conductive oxides (TCOs) have attracted attention due to their high electrical conductivity and optical transparency in the visible region. Consequently, TCOs have been widely used as electrode materials in various electronic devices such as flat panel displays and solar cells. Previous studies on TCOs focused on their electrical and optical performances; there have been numerous attempts to improve these properties, such as chemical doping and crystallinity enhancement. Recently, due to rapidly increasing demand for flexible electronics, the academic interest in the mechanical stability of materials has come to the fore as a major issue. In particular, long-term stability under bending is a crucial requirement for flexible electrodes; however, research on this feature is still in the nascent stage. Hydrogen-incorporated amorphous In-Sn-O (a-ITO) thin films were fabricated by introducing hydrogen gas during deposition. The hydrogen concentration in the film was determined by secondary ion mass spectrometry and was found to vary from $4.7{\times}10^{20}$ to $8.1{\times}10^{20}cm^{-3}$ with increasing $H_2$ flow rate. The mechanical stability of the a-ITO thin films dramatically improved because of hydrogen incorporation, without any observable degradation in their electrical or optical properties. With increasing hydrogen concentration, the compressive residual stress gradually decreased and the subgap absorption at around 3.1 eV was suppressed. Considering that the residual stress and subgap absorption mainly originated from defects, hydrogen may be a promising candidate for defect passivation in flexible electronics.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.3 no.3
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• pp.219-234
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• 2009

This paper presents a novel approach for extracting simultaneously human daily activity patterns and discovering the temporal relations of these activity patterns. It is necessary to resolve the services conflict and to satisfy a user who wants to use multiple services. To extract the simultaneous activity patterns, context has been collected from physical sensors and electronic devices. In addition, a context model is organized by the proposed incremental statistical method to determine conflicts and to infer user intentions through analyzing the daily human activity patterns. The context model is represented by the sets of the simultaneous activity patterns and the temporal relations between the sets. To evaluate the method, experiments are carried out on a test-bed called the Ubiquitous Smart Space. Furthermore, the user-intention simulator based on the simultaneous activity patterns and the temporal relations from the results of the inferred intention is demonstrated.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.12 no.9
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• pp.4527-4547
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• 2018

Signcryption is a cryptographic primitive that provides authentication (signing) and confidentiality (encrypting) simultaneously at a lower computational cost and communication overhead. With the proposition of certificateless public key cryptography (CLPKC), certificateless signcryption (CLSC) scheme has gradually become a research hotspot and attracted extensive attentions. However, many of previous CLSC schemes are constructed based on time-consuming pairing operation, which is impractical for mobile devices with limited computation ability and battery capacity. Although researchers have proposed pairing-free CLSC schemes to solve the issue of efficiency, many of them are in fact still insecure. Therefore, the challenging problem is to keep the balance between efficiency and security in CLSC schemes. In this paper, several existing CLSC schemes are cryptanalyzed and a new CLSC scheme without pairing based on elliptic curve cryptosystem (ECC) is presented. The proposed CLSC scheme is provably secure against indistinguishability under adaptive chosen-ciphertext attack (IND-CCA2) and existential unforgeability under adaptive chosen-message attack (EUF-CMA) resting on Gap Diffie-Hellman (GDH) assumption and discrete logarithm problem in the random oracle model. Furthermore, the proposed scheme resists the ephemeral secret leakage (ESL) attack, public key replacement (PKR) attack, malicious but passive KGC (MPK) attack, and presents efficient computational overhead compared with the existing related CLSC schemes.

• Laser Solutions
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• v.13 no.1
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• pp.11-15
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• 2010

Indium tin oxide (ITO) provides high electrical conductivity and transparency in the visible and near IR (infrared) wavelengths. Thus, it is widely used as a transparent electrode for the fabrication of liquid crystal displays (LCDs) and organic light emitting diode displays (OLRDs), photovoltaic devices, and other optical applications. Lasers have been used for removing coating on polymer substrate for flexible display and electronic industry. In selective removal of ITO layer, laser wavelength, pulse energy, scan speed, and the repetition rate of pulses determine conditions, which are efficient for removal of ITO coating without affecting properties of the polymer substrate. ITO coating removal with a laser is more environmentally friendly than other conventional etching methods. In this paper, pattering of ITO film from polymer substrates is described. The Yb:KGW femtosecond laser processing system with a pulse duration of 250fs, a wavelength of 1030nm and a repetition rate of 100kHz was used for removing ITO coating in air. We can remove the ITO coating using a scanner system with various pulse energies and scan speeds. We observed that the amount of debris is minimal through an optical and a confocal microscope, and femtosecond laser pulses with 1030nm wavelength are effective to remove ITO coating without the polymer substrate ablation.

• Journal of Surface Science and Engineering
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• v.40 no.3
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• pp.144-148
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• 2007

To prepare the transparent electrode for electronic devices such as flat panel or flexible displays, solar cells, and touch panels; tin doped $In_2O_3$ (ITO) films with low resistivity and a high transparency were fabricated using a facing target sputtering (FTS) system at the various oxygen gas flow rate. The carrier concentration and mobility of ITO films were measured by Hall Effect measurement. And the transmittance was measured using the UV-VIS spectrometer. As a result, we can obtain the ITO thin films prepared at 10% oxygen gas flow ratio, thickness 150 nm with transmittance 85% and resistivity $8.1{\times}10^{-4}{\Omega}cm$ and surface roughness 5.01 nm.