• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.29 no.11
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• pp.605-611
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• 2017

The purpose of this study is to calculate the energy consumption rate based on data regarding energy use in office buildings, and to confirm the general characteristics of energy consumption. The energy consumption rate of the building is calculated by dividing the energy consumption by the floor area. The energy consumption rate of small-sized office buildings was calculated as $101.48{\sim}201.55kWh/m^2{\cdot}year$ and in the case of medium-sized buildings, the range was $92.77{\sim}177.89kWh/m^2{\cdot}year$. In the case of small buildings, it was found that the energy consumption was $73.24kWh/m^2{\cdot}year$ in electronic device, $34.31kWh/m^2{\cdot}year$ in hot water supply, and $18.37kWh/m^2{\cdot}year$ in heating. In the case of medium-sized buildings, electronic devices was $73.08kWh/m^2{\cdot}year$, lighting was $18.35kWh/m^2{\cdot}year$ and heating, $15.37kWh/m^2{\cdot}year$. In all of the study buildings, the peak heating energy use was observed from 8:00 a.m. to 10:00 a.m during the winter, and the peak power management was required. Energy use at and around the midnight hour is confirmed to be 40~60% of weekly working hours, so it is necessary to manage power use at night time as well as during the day. In order to improve the accuracy of future studies, it is necessary to make efforts to secure the data with standardized energy measuring units for the various type of buildings.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.27 no.4
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• pp.913-921
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• 2017

Mobile electronic commerce is rapidly growing up on the strength of popularization of smart devices such as smart phone followed by internet user increase. Concurrently with this, the anxiety on information security and personal information leakage of the user of mobile electronic commerce significantly built up in recent. In this respect, the information security and personal information protection should be become aware of their importance for the sustainable expansion and development of mobile commerce. Based on the demands as mentioned, this study analyzed the effects of the awareness of personal information security on recognized risk, recognized confidence and intent to use. The result of this study indicates that information security and personal information protection contribute to improvement in confidence by decreasing anxiety and uncertainty related to mobile commerce. Reduction of anxiety and uncertainty implies a crucial point that affects psychological mechanism making intent to use higher.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.128.1-128.1
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• 2016

Nitrided-metal gates on the high-${\kappa}$ dielectric material are widely studied because of their use for sub-20nm semiconductor devices and the academic interest for the evanescent states at the Si/insulator interface. Issues in these systems with the Si substrate are the electron mobility degradation and the reliability problems caused from N defects that permeates between the Si and the $SiO_2$ buffer layer interface from the nitrided-gate during the gate deposition process. Previous studies proposed the N defect structures with the gap states at the Si band gap region. However, recent experimental data shows the possibility of the most stable structure without any N defect state between the bulk Si valence band maximum (VBM) and conduction band minimum (CBM). In this talk, we present a new type of the N defect structure and the electronic structure of the proposed structure by using the first-principles calculation. We find that the pair structure of N atoms at the $Si/SiO_2$ interface has the lowest energy among the structures considered. In the electronic structure, the N pair changes the eigenvalue of the silicon-induced gap state (SIGS) that is spatially localized at the interface and energetically located just above the bulk VBM. With increase of the number of N defects, the SIGS gradually disappears in the bulk Si gap region, as a result, the system gap is increased by the N defect. We find that the SIGS shift with the N defect mainly originates from the change of the kinetic energy part of the eigenstate by the reduction of the SIGS modulation for the incorporated N defect.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.139.1-139.1
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• 2016

Multiferroic materials are of great interest because of its potential applications in the design of devices combining magnetic, electronic and optical functionalities. Among various multiferroic materials, $BiFeO_3$(BFO) is known to be one of the intensively focused mainly due to the possibility of multiferroism at device working temperature (> $200^{\circ}C$). However, leakage current and weak polarization resulting from oxygen deficiency and crystalline defect should be resolved. Furthermore the magnetic ordering of pure BFO mainly prefers to have antiferromagnetic coupling. Up to now many attempts have been performed to improve the ferromagnetic and the ferroelectric properties of BFO by doping. In this work, we investigated the effects of Ni substitution on the multiferroism of bulk BFO. Four BFO samples (a pure BFO and three Ni-doped BFO's; $BiFe_{0.99}Ni_{0.01}O_3$, $BiFe_{0.98}Ni_{0.02}O_3$ and $BiFe_{0.97}Ni_{0.03}O_3$) were synthesized by the standard solid-state reaction and rapid sintering technique. The XRD results reveal that Ni atoms are substituted into Fe-sites and give rise to phase transition of cubic to rhombohedal. By using vibrating sample magnetometer and standard ferroelectric tester, the multiferroic properties at room temperature were characterized. We found that the magnetic moment of Ni-doped BFO turned out to be maximized for 3% of Ni dopant.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.8
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• pp.890-895
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• 2016

As the wireless communication technique is developing rapidly, the use of smart devices is increasing. Due to gradually increasing data traffic, a new area, more than 6GHz of bandwidth to increase capacity of the network, has been studied. Millimeter Wave(MmWave) communications utilizes the bandwidth above 6GHz, which makes it possible to achieve one gigabit per second data rate. To overcome the path loss due to the smaller wavelength, the mass of the antenna arrangement is used. This paper presents an algorithm that maximizes the spectral efficiency of the system in the pre-coding process using a hybrid beamforming. Also it is suggested with the optimization of the number of beams that maximizes the spectral efficiency was maximized by the propose method.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.11
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• pp.2113-2120
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• 2015

This paper presents an integrated receiver to support multimode broadcasting standards such as DVB-T2, DVB-C2, and DVB-S2 in a single platform. The integrated receiver consists of a tuner block, a receiver engine, a frame processor, and an A/V decoder. The receiver engine includes a channel decoding engine and a demodulation engine to perform OFDM and APSK demodulations. The frame processor performs deinterleaving and BB frame decoding functions. The demodulator engine and the frame processor are implemented in two FPGA devices and DSP-based embedded software, respectively. To verify the functionality of the integrated receiver, it is tested in the laboratory. Commercial PC-based modulators are used to generate the DVB-T2, DVB-C2, and DVB-S2 modulated signals. The integrated receiver was tested under various operation modes as specified in the standards such as DVB-T2, DVB-C2, and DVB-S2 and showed successful operation in all the scenarios tested.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.440-440
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• 2009

Semiconductor nanowires offer exciting possibilities as components of solar cells and have already found applications as active elements in organic, dye-sensitized, quantum-dot sensitized, liquid-junction, and inorganic solid-state devices. Among many semiconductors, silicon is by far the dominant material used for worldwide photovoltaic energy conversion and solar cell manufacture. For silicon wire to be used for solar device, well aligned wire arrays need to be fabricated vertically or horizontally. Macroscopic silicon wire arrays suitable for photovoltaic applications have been commonly grown by the vapor-liquid-solid (VLS) process using metal catalysts such as Au, Ni, Pt, Cu. In the case, the impurity issues inside wire originated from metal catalyst are inevitable, leading to lowering the efficiency of solar cell. To escape from the problem, the wires of purity of wafer are the best for high efficiency of photovoltaic device. The fabrication of wire arrays by the electrochemical etching of silicon wafer with photolithography can solve the contamination of metal catalyst. In this presentation, we introduce silicon wire arrays by electrochemical etching method and then fabrication methods of radial p-n junction wire array solar cell and the various merits compared with conventional silicon solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.223-223
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• 2009

In this paper, designed and simulated Power Splitter (PS) integrated Mach-Zehnder interferometer (MZI) based planar type optical waveguide devices (which is called here a PS-MZI). The PS-MZI optical waveguide sensor was preceded by a Y-junction, which splits the input power between the sensor, and a reference branch, to minimize the effect of optical power variations. The PS-MZI optical waveguide sensor induced changing phases of the incident beam, which had fallen upon the waveguide through computer simulation, according to the small changes in the index of refraction, thus beam intensity was changed. The waveguide were optimized at a wavelength of 1550 nm and fabricated according to the design rule of 0.45 delta%, which is the difference of refractive index between the core and clad. The fabrication of PS-MZI optical waveguide sensor was performed by a conventional planar lightwave circuit (PLC) fabrication process. The PS-MZI optical waveguide that was fabricated to be applied as a biosensor revealed a low insertion loss and a low polarization-dependent loss. After having etched the over-clad at the sensor part in the MZI optical waveguide that was fabricated, Ti deposition was made on the adhesion layer, and then Au thin-film deposition was carried out thereon. In addition, its optical properties were measured by having changed the index of refraction oil at the sensing part of the MZI. To apply the planar type PS-MZI optical waveguide as a biosensor, a detection test for Staphylococcus aureus was conducted according to changes in concentration, having adopted Ti-alkoxide as ligand. The detection result of the S. aureus by the PS-MZI optical waveguide sensor was possible to the level of $10^1$ CFU/ml.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.331-331
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• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.284-284
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• 2009

We have fabricated semiconductor nanocrystals using phase separation on flexible substrates for future application in QD-LEDs. The phase separation between the CdSe semiconductor nanocrystals and TPD organic underlayer can occur during the solvent drying, and the CdSe may rise towards the surface of the coated films, which is arranged into close packed array called self-assembly process. In this work, the polyethylene naphthalate (PEN) films of $200{\mu}m$ thickness was used as a flexible substrate, which was coated with indium tin oxide(ITO) as a transparent electrode of <$15{\Omega}/cm^2$. A number of solvents such as chloroform, toluene, and hexane was used and their coating properties were investigated using the spin coating process. The dispersion of both QD and TPD was rather poor in toluene and hexane and resulted in rougher surface and some aggregates. Meanwhile, the surface roughness of templates can be a very critical issue in the fabrication of QD-LED devices. Some experiments was performed to reduce the ~4nm surface roughness of the PEN films and It can be decreased to the minimum of ~0.7nm. Also discussed are the optical properties of semiconductor nanocrystals used in this phase separation and possible large area and continuous coating process for future application.