• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.8 no.5
• /
• pp.394-399
• /
• 2015

This paper is a study related to connecting to medical device in IoT environment for e-Health Implementation. The implementation environment of this paper consists of sensing device node, gateway and its server. The information from medical devices on sensor node is transferred to gateway. The gateway transfers the information from their devices into the server and the server saves their transferred information. The medical information from medical devices is ready to use in making medical decision which is saved in database. In this paper, we connected the gateway to the commercial sensor node for implementing gateway functions. We studied and implemented how their network entities communicate each other.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.211.1-211.1
• /
• 2014

Recently, the scaling of conventional planar NAND flash devices is facing its limits by decreasing numbers of electron stored in the floating gate and increasing difficulties in patterning. Three-dimensional vertical NAND devices have been proposed to overcome these issues. Atomic layer deposition (ALD) is the most promising method to deposit charge trap layer of vertical NAND devices, SiN, with excellent quality due to not only its self-limiting growth characteristics but also low process temperature. ALD of silicon nitride were studied using NH3 and silicon chloride precursors, such as SiCl4[1], SiH2Cl2[2], Si2Cl6[3], and Si3Cl8. However, the reaction mechanism of ALD silicon nitride process was rarely reported. In the present study, we used density functional theory (DFT) method to calculate the reaction of silicon chloride precursors with a silicon nitride surface. DFT is a quantum mechanical modeling method to investigate the electronic structure of many-body systems, in particular atoms, molecules, and the condensed phases. The bond dissociation energy of each precursor was calculated and compared with each other. The different reactivities of silicon chlorides precursors were discussed using the calculated results.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1515-1517
• /
• 2002

$MnO_2$ is used for the oxide electrode of electrochemical equipments because of its good electric conductivity and low oxygen overpotential. The effect of additives on the properties of $MnO_2$ has been investigated to enhance the electric conductivity and the stability in an acid solution. In this research, the effect of Ni addition on ${\beta}-MnO_2$ was studied by the theoretical quantum chemical method. The calculation was carried out by the discrete variation $X{\alpha}$ method, which is a sort of the first principle method and use Hatre-Fock-Slater approximation. The electron energy level, the density of state, the bond overlap population, the charge density distribution and the net ionic transfer between cations and anions were calculated and discussed. The used cluster model was $(Mn_{10}NiO_{44})^{-44}$.

• Proceedings of the KIEE Conference
• /
• 1999.11d
• /
• pp.962-964
• /
• 1999

We studied emitting properties of devices fabricated using the spin-coating and Langmuir-Blodgett[LB] technique. The LB technique has the advantage of precise control of the thickness better than spin-coating method. Poly(3-hexylthiophene)[P3HT] LB films used as the emitting layer in light-emitting devices. LB monolayers were deposited 27 layers onto the indium-tin-oxide[ITO] as Y-type films by the vertical dipping method. The thickness is about 80nm. Absorption spectrum of LB films presented that P3HT is regiorandom conformation. Also, current-voltage-luminance characteristics and electroluminescence spectra of light-emitting devices fabricated by LB method is studied. In current-voltage-luminescence characteristics, turn-on voltage of P3HT LB film LEDs is higher than that of spin-coating LEDs. But electroluminescence spectrum is similar to the spin-coating LEDs. The orange-red light was clearly visible in a darkened room.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• v.6 no.2
• /
• pp.566-579
• /
• 2012

Ubiquitous computing called pervasive one is based on the thought of pervading ability of computation in daily life applications. In other words, it aims to include computation in devices such as electronic equipment and automobiles. This has led to disengagement of computers from desktop form. Accordingly, the notice in ubiquitous computing being taken of a world steeped in remote and wireless computer-based-services. Handheld and wearable programmed devices such as sense and control appliances are such devices. This advancement is rapidly moving domestic tasks and life from device-and-human communication to the device-and-device model. This model called Machine to Machine (M2M) has led to acceleration of developments in sciences such as nano-science, bio-science, and information science. As a result, M2M led to appearance of applications in various fields such as, environment monitoring, agricultural, health care, logistics, and business. Since it is envisaged that M2M communications will play a big role in the future in all wireless applications and will be emerged as a progressive linkage for next-generation communications, this paper aims to consider how much M2M architectures can realize ubiquitous computing in daily life applications. This is carried out after acquainting and initiating readers with M2M architectures and arguments for M2M. Some of the applications was not achievable before but are becoming viable owing to emergence of M2M communications.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• v.2 no.1
• /
• pp.37-49
• /
• 2008

At the present time the task of designing a highly integrated ZigBee radio frequency (RF) receiver with an excellent coexistence performance is still very demanding and challenging. This paper presents a number of system issues and design considerations for a ZigBee RF receiver, namely IEEE 802.15.4, for coexistence with wireless devices in the 2.4-GHz ISM-band. With regard to IEEE 802.15.4, the paper analyzes receiver performance requirements for; system noise figure (NF), system third-order intercept point (system-IIP3), local oscillator phase noise and selectivity. Based on some assumptions, the paper illustrates the relationship between minimum detectable signal (MDS) and various situations that involve the effects of electromagnetic interference generated by other wireless devices. We infer the necessity of much more stringent specification requirements than the published standard for various wireless communication field environments

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.597-597
• /
• 2012

A simple solution-based method is developed to deposit crystalline ultrathin (2 nm) nickel hydroxide on vertically grown ZnO nanowires to achieve high specific capacitance and long-term life for flexible and wearable energy storage devices. Ultrathin crystalline $Ni(OH)_2$ enables fast and reversible redox reaction to improve the specific capacitance by utilizing maximum number of active sites for the redox reaction while vertically grown ZnO nanowires on wearable textile fiber effectively transport electrolytes and shorten the ion diffusion path. Under the highly flexible state $Ni(OH)_2$ coated ZnO nanowires electrode shows a high specific capacitance of 2150 F/g (based on pristine $Ni(OH)_2$ in 1 M LiOH aqueous solution with negligible decrease in specific capacitance after 1000 cycles. The synthesized energy-storage electrodes are easy-to-assemble which can provide unprecedented design ingenuity for a variety of wearable and flexible electronic devices.

• Applied Microscopy
• /
• v.41 no.2
• /
• pp.89-98
• /
• 2011

Atom Probe Tomography (APT) can provide 3-dimensional information such as position and chemical composition with atomic resolution. Despite the ability of this technique, APT could not be applied for poor conductive materials such as semiconductor. Recently APT has dramatically developed by applying the laser pulsing and combining with Focused Ion Beam (FIB). The invention and combination of these techniques make possible site-specific sample preparation and permit the investigation of various materials including insulators. In this paper, we introduced the recently achieved state of the art applications of APT focusing on Si based FET devices, LED devices, low dimensional materials.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.21 no.6
• /
• pp.1398-1415
• /
• 1996

Instead of using three charge-coupled devices (CCDs) for the corresponding color channels, most consumer's most consummer's color macmorders reconstruct color images by using only one CCD with a color filter array (CFA), which periodically samples different color signals. By this reson the resulting image cannot produce the full resolution of the input image. More sepecifically, a single-CCD color camcorder reconstructs red, greed, and blue color channels from a color filter array followed by a CCD. During the reconstruction process, color cross-talk among channels (interchannel distortion) and eriodically space-verying blur (intrachannel distortion) occur. The proposed restoration system reduces distortions due to interchannel interference, and then restores each color channel by removing the corresponding intrachannel distortion. Experimental results show that the proposedsystem provides the improved image in oth objective and subjective senses. A major advantage of the proposed system is feasible to real-time image improvement because it can be implemented by a finite impulse response (FIR) filter structure.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.500-500
• /
• 2011

With recent advances in flexible and stretchable electronics, the development of physically responsive field-effect transistors (physi-FETs) that are easily integrated with transformable substrates may enable the omnipresence of physical sensing devices in electronic gadgets. However, physical stimuli typically induce whole sensing physi-FET devices under global influences that also cause changes in the parameters of FET transducers, such as channel mobility and dielectric capacitance that prevent proper interpretations of response in sensing materials. Extended-gate structures with isolated stimuli have been used recently in physi-FETs to demonstrate performances of sensing materials only. However, such approaches are limited to prototype researches since isolated stimuli rarely occur in real-life applications. In this report, we theoretically and experimentally demonstrated that integrating piezoelectric nanocomposites directly into flexible organic FETs (OFETs) as gate dielectrics provides a general research direction to physi-FETs with a simple device structure and the capability of precisely investigating functional materials. Measurements with static stimulations, which cannot be performed in conventional systems, exhibited giant-positive d33 values of nanocomposites of barium titanate (BT) NPs and poly (vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)).