• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.5
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• pp.299-304
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• 2018

An ideal circuit breaker should supply electric power to loads without losses in a conduction state and completely isolate the load from the power source by providing insulation strength in a break state. Fault current is relatively easy to break in an Alternating Current (AC) circuit breaker because the AC current becomes zero at every half cycle. However, fault current in DC circuit breaker (DCCB) should be reduced by generating a high arc voltage at the breaker contact point. Large fire may occur if the DCCB does not take sufficient arc voltage and allows the continuous flow of the arc fault current with high temperature. A semiconductor circuit breaker with a power electronic device has many advantages. These advantages include quick breaking time, lack of arc generation, and lower noise than mechanical circuit breakers. However, a large load capacity cannot be applied because of large conduction loss. An extinguishing technology of DCCB with polymeric positive temperature coefficient (PPTC) device is proposed and evaluated through experiments in this study to take advantage of low conduction loss of mechanical circuit breaker and arcless breaking characteristic of semiconductor devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.104-110
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• 2008

In this paper we proposed a new source-drain structure for N-type MOSFET which can suppress the output resistance reduction of a device in saturation region due to soft break down leakage at high drain voltage when the gate is biased around relatively low voltage. When a device is generally used as a switch at high gate bias the current level is very important for the operation. but in electronic circuit like an amplifier we should mainly consider the output resistance for the stable voltage gain and the operation at low gate bias. Hence with T-SUPREM simulator we designed devices that operate at low gate bias and high gate bias respectively without a extra photo mask layer and ion-implantation steps. As a result the soft break down leakage due to impact ionization is reduced remarkably and the output resistance increases about 3 times in the device that operates at the low gate bias. Also it is expected that electronic circuit designers can easily design a circuit using the offered N-type MOSFET device with the better output resistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.135-140
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• 2016

In this study, we developed the solution-processed PMMA-$HfO_x$ hybrid ReRAM devices to overcome the respective drawbacks of organic and inorganic materials. The performances of PMMA-$HfO_x$ hybrid ReRAM were compared to those of PMMA- and $HfO_x$-based ReRAMs. Bipolar resistive switching behavior was observed from these ReRAMs. The PMMA-$HfO_x$ hybrid ReRAMs showed a larger operation voltage margin and memory window than PMMA-based and $HfO_x$-based ReRAMs. The reliability and electrical instability of ReRAMs were remarkably improved by blending the $HfO_x$ into PMMA. An Ohmic conduction path was commonly generated in the LRS (low resistance state). In HRS (high resistance state), the PMMA-based ReRAM showed SCLC (space charge limited conduction). the PMMA-$HfO_x$ hybrid ReRAM and $HfO_x$-based ReRAM revealed the Pool-Frenkel conduction. As a result of flexibility test, serious defects were generated in $HfO_x$ film deposited on PI (polyimide) substrate. On the other hand, the PMMA and PMMA-$HfO_x$ films showed an excellent flexibility without defect generation.

• Journal of International Society for Simulation Surgery
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• v.3 no.1
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• pp.1-8
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• 2016

In the field of Radiology, the Computer Aided Diagnosis is the technology which gives valuable information for surgical purpose. For its importance, several computer vison methods are processed to obtain useful information of images acquired from the imaging devices such as X-ray, Magnetic Resonance Imaging (MRI) and Computed Tomography (CT). These methods, called pattern recognition, extract features from images and feed them to some machine learning algorithm to find out meaningful patterns. Then the learned machine is then used for exploring patterns from unseen images. The radiologist can therefore easily find the information used for surgical planning or diagnosis of a patient through the Computer Aided Diagnosis. In this paper, we present a review on three widely-used methods applied to Computer Aided Diagnosis. The first one is the image processing methods which enhance meaningful information such as edge and remove the noise. Based on the improved image quality, we explain the second method called segmentation which separates the image into a set of regions. The separated regions such as bone, tissue, organs are then delivered to machine learning algorithms to extract representative information. We expect that this paper gives readers basic knowledges of the Computer Aided Diagnosis and intuition about computer vision methods applied in this area.

• Proceedings of the Korean Magnestics Society Conference
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• 2017.05a
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• pp.165-166
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• 2017

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.620-624
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• 2015

We have studied structural, optical and electrical properties of In-Ga-doped ZnO (IGZO) thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 30, 50, 70, and 90 W respectively. All of the IGZO thin films transmittance in the visible range (400 nm ~ 800 nm) was above 83%. XRD analysis showed the IGZO thin films amorphous structure of the thin films without any peak. And also IGZO thin film have low resistivity ($1.99{\times}10^{-3}{\Omega}cm$), high carrier concentration ($6.4{\times}10^{20}cm^{-3}$), and mobility ($10.3cm^2V^{-1}s^{-1}$). By the studies we found that IGZO transparent thin film can be used as optoelectronic material and introduced application possibility for future electronic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.669-673
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• 2011

The charged particle type display is a kind of the reflectivity type display and shows an image by absorption and reflection of external light source, which has keep an image without additional electric power because of bistability. In this paper, we made a device whose cell gap is $56\;{\mu}m$ and also analyzed driving and memory characteristics by applied driving voltages. As a result, we found that the driving voltage and memory effect depend on q/m(charge to mass ratio) of charged particle. In this case of breakdown voltage, the devices showed degradation of reflectivity and memory effect due to irregular movement of overcharged particles. In addition, contrast ratio of the device varies with memory effect. Thus, we consider that device needs uniform q/m for improvement of electric and optical properties and memory effect.

• Journal of Sensor Science and Technology
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• v.25 no.6
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• pp.388-393
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• 2016

MPEG-V(ISO/IEC 23005) standardizes normative sensory effects metadata and sensory devices command for adapting the sensory effects between the virtual world and the real world. MPEG-V(Virtual) standardization has been carried out by 3DG(Dimensional Graphics) ad-hoc group inside MPEG Working Group(ISO IEC JTC1/SC29/WG11). For the scent effect, one of the sensory effects within MPEG-V, we proposed an olfactory interaction model including electronic nose and scent display to the ad-hoc group. Recently, we proposed types and elements related to the electronic nose as a sensor defined in MPEG-V standard for olfactory interaction. At the 114th MPEG meeting, the types and elements were consequently reflected on MPEG-V CD(Committee Draft) 4th edition. In this paper, we implement an electronic nose system applicable to MPEG-V standard by using MPEG-V schema, encoder, and decoder in order to assess their adequacy.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.4
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• pp.357-363
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• 2014

A programmable smart charger compatible to various load conditions is proposed in this paper. Since the proposed smart charger is compatible to various mobile devices having different rated voltage and power, it is convenient for carrying and easy to standardize many kinds of battery chargers. Moreover, since it uses the input impedance and built-in PMIC (Power management IC) of the load system to recognize the connection state and specifications of load system, hardware changes of load system is not only hardly necessary but it also features no addition communication cable and easy implementation. To confirm the validity of the proposed charger, the theoretical analysis and experiment results from a prototype compatible to three load conditions 5V/1A, 5V/2A and 12V/1A are provided.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.55-56
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• 2007

The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Using the ampoule-tube to fabricate the p-type ZnO will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.