• Laser Solutions
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• v.15 no.4
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• pp.12-15
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• 2012

On behalf of the existing semiconductor process, the electronic devices to low-cost mass production to mass print the way, the research for development of roll-to-roll printing process is actively underway. This study was performed in about the research on the manufacturing technology of the printing roll used in the printing process of electronic devices. The indirect laser imprinting technology was used to create printable roll, and after coating copper on the surface of steel and thereon after coating polymer, after removing the polymer on the surface of roll, the printable roll was made. The laser system and roll feeder system were constructed and control program was developed. We has found the optimal conditions to perform laser patterning experiments using a system developed and We can make the minimum line width of 18 ${\mu}m$.

• Journal of Sensor Science and Technology
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• v.11 no.2
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• pp.111-117
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• 2002

In this paper, we proposed calibration techniques to improve measurement accuracy in the characteristic analysis system for semiconductor devices. Systematic errors can be reduced using proposed calibration techniques. Also, error current reduction procedures including leakage current and offset current are proposed to measure low-level current in pA level. Calibration parameters are calculated and stored by microprocessor using least-square fitting with measured sample data. During measurement time microprocessor corrects measured data using stored calibration parameters. Experimental results show that current measurement error above nA level is less than 0.02%. And they also show that current measurement in pA level can be performed with about 0.2% accuracy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.878-882
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• 2006

We have fabricated single organic layer devices of the organolanthanide complex, terbium tris-(1-phenyl-3-methyl-4-(tertiarybutyry)pyrazol-5-one)triphenylphosphine oxide [$(tb-PMP)_{3}Tb-(Ph_{3}PO)$] for the investigation of its light emission and electrical conduction properties. The thickness of ($(tb-PMP)_{3}Tb-(Ph_{3}PO)$) layer was varied to 60, 75, 95 nm. Mg and Ca layers were used for the cathode contact. The electrical conduction in the $(tb-PMP)_{3}Tb-(Ph_{3}PO)$ single layer devices was dominated by the injection of electrons into the organic layer from the cathode. A higher current density at much lower voltages can be attained with Ca cathode because of the enhanced electron injection. The device shows very sharp emission at 548 nm. The FWHM of the strongest emission peak was 12 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.679-687
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• 2001

It is known that amorphous BaTiO$_3$ thin films have good insulating properties[1][2]. In this investigation, amorphous BaTiO$_3$ thin films were deposited by rf magnetron sputtering on thick BaTiO$_3$ films of AC powder EL devices which were fabricated by screen-printing. The electrical and optical properties of the EL devices were then investigated. Adding amorphous BaTiO$_3$ thin film, it showed that leakage current density was decreased. Especially, leakage current density was decreased more with he sample of 0.5-hour deposition than the sample of 4-hours deposition. This result led to the improvement of luminous efficiency by 11%. It could be concluded that proper amorphous BaTiO$_3$ thin film deposition improved the surface property of dielectric layer.

• Transactions on Electrical and Electronic Materials
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• v.5 no.2
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• pp.76-80
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• 2004

Piezoelectric and dielectric properties as functions of x and y mole ratio in yPb(ZrxTil-x)O$_3$(1-y)Pb(Mn$\_$1/3/Nb/2/3/)O$_3$, ceramics, PZT-PMN, are investigated for large displacement piezoelectric devices. From the experimental results, when y is 0.95 and x is 0.505, the piezoelectric and dielectric properties are maximum, that is, electromechanical coupling coefficient(kp), piezoelectric strain constant(d$\_$33/), permittivity($\varepsilon$$\_$33/$\^$T//$\varepsilon$$\_$0/), and Curie temperature are 58 %, 272 pC/N, 1520 and about 350$^{\circ}C$, respectively. Also, when y is 0.90 and x is 0.50, their properties are 56 %, 242 pC/N, 1220, and 290$^{\circ}C$, respectively. As MgO dopant is added from 0 wt% to 1 wt%, kp increases to 63 % and Qm decreases to 500 at the MgO dopant of 0.1 wt%, and then kp decreases to 57 % as MgO is added.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1060-1064
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• 2002

We have studied the effect of crystallization temperature, composition and film thickness, which are the fundamental processing parameters of lead zirconate titanate(PZT) thin film fabrication, in the respect of the piezoelectric properties by our pneumatic loading method(PLM). A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. Even though the piezoelectric properties of thin films are very critical factors in the micro-electro mechanical system(MEMS) and thin film sensor devices, a few reports for the piezoelectric characterization are provided for the last decade unlikely the bulk piezoelectric devices. We have found that the piezoelectric properties of thin films are improved as the increase of crystallization temperature up to 750$\^{C}$ and this behavior can be also explained by the analysis of dielectric polarization hysteresis loop, X-ray diffraction and scanning electron microscopy. The effect of Zr/Ti composition has been also studied. This gives us the fact that the maximum piezoelectricity is found near Morphotropic Phase Boundary(MPB) as bulk PZT system does.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.77-82
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• 2003

The ac loss is an important issue in the design of high-Tc superconducting power devices such as transformers and cables. In these devices many Bi-2223 tapes are closely stacked together and exposed to alternating magnetic fields that can have different orientations with respect to a tape. In such arrangement the magnetization loss is influenced by the screening current induced in adjacent tapes and thus different from that in a single tape. This stacking effect was experimentally investigated by measuring the magnetization loss in a stack, which consists of a number of tapes. First the magnetization loss in the single tape was measured in order to confirm the reliability of the loss data measured in the stack. The results for the single tape coincide well will the loss characteristics described in other previous works. For the stack In parallel and longitudinal magnetic fields the measured loss is Independent of both the number of tapes and stacking type. The longitudinal magnetization loss Is well explained rather by the slab model for decoupled filaments. For the tall stack in perpendicular field the measured loss at low fields is greatly decreased, compared to the loss of the single tape. However the loss at high fields is unaffected. These loss behaviors in the tall stack are well described by the slab model for full coupling.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.26-32
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• 2003

Then-channel poly-Si thin-film transistors (poly-Si TFT's) formed by solid phase crystallization (SPC) method on glass were measured to obtain the electrical parameters such as of I-V characteristics, mobility, leakage current, threshold voltage, and subthreshold slope. Then, devices were analyzed to obtain the reliability and appliability on TFT-LCD with large-size and high density. In n-channel poly-Si TFT with 5$\mu\textrm{m}$/2$\mu\textrm{m}$, 8$\mu\textrm{m}$, 30$\mu\textrm{m}$ devices of channel width/length, the field effect mobilities are 111, 116, 125 $\textrm{cm}^2$/V-s and leakage currents are 0.6, 0.1, and 0.02 pA/$\mu\textrm{m}$, respectively. Low threshold voltage and subthreshold slope, and good ON-OFF ratio are shown, as well. Thus. the poly-Si TFT's used by SPC are expected to be applied on TFT-LCD with large-size and high density, which can integrate the display panel and peripheral circuit on a targe glass substrate.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.101-105
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• 2005

Electroluminescence(EL) and current-voltage(I-V) characteristics of hybrid EL devices containing Pr and Mn co-doped ZnS nanoparticles were investigated in this study. For the insertion of a hole transport layer of poly (N-vinyl carbazole)(PVK), the current level became lower due to the accumulation of electrons at the interface between PVK and nanoparticles. When both PVK and buffer layer $BaF_2$ were simultaneously introduced, the enhanced EL efficiency and improved I-V characteristics were obtained. This results from the additional increase of hole injection owing to the internal field induced by the significant accumulation of electrons at the interface. The presence of buffer layer $BaF_2$ together with PVK makes it possible the charge accumulation enough to induce the sufficient internal field for further hole injection.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.329-334
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• 2008

Aluminum oxide films were deposited on n-type GaN substrates by RF magnetron sputtering technique for MIS devices applications using optimized conditions, Well-behaved C - V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $9\times10^{10}/cm^2$ eV in the upper bandgap. The gate leakage current densities of the MIS structures were about $10^{-9}A/cm^2$ and about $10^{-4}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for $a{\pm}1MV/cm$, respectively. These results indicate that the interface property of this structure is enough quality to MIS devices applications.