• Journal of Electrical Engineering and Technology
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• 제13권2호
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• pp.858-867
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• 2018

Analytical modeling equations are proposed for the conventional and modified three-section branch-line couplers. The analytical equations are explicit and capable of determining the characteristic impedance of each branch line for the coupler at desired coupling level as well as the suitability of broadband S-parameters analysis. In addition, a bandwidth extension and miniaturization of three-section branch-line coupler using slow-wave and meandering line structures were designed. The modified coupler, which is able to operate within frequencies from 1.5 to 3.32 GHz has been fabricated, tested and compared. A bandwidth extension of 600 MHz and 53% reduced size of the modified coupler have been achieved compared to a conventional coupler. The modified coupler has roughly insertion loss and coupling of -4 dB and -3.2 dB, while the isolation and return loss, respectively less than -14 dB with fractional bandwidth of 77 %, as well as phase imbalances less than $2^{\circ}$ over the operating bandwidth. Overall, the derived analytical model, simulation and measurement results demonstrated a good agreement.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.826-832
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• 1998

In this study the thin films with the structure of Si+SiO$_2$+TiN are made by RF supttering method. TiN, which has small diffusion coefficient and low resistivity, is evaporated between SiO$_2$ and Al layers. It investigates the V-R characteristics depending on the thickness of SiO$_2$ which is used as insulation layer and researches its effects on voltage stability of thin film and varistor. These films show very small resistance valus in negative(-) voltage and large and large value in positive voltage band, and with the increase of voltage, resistance value is rapidly reduced and the satisfactory characteristic of varistor is shown at +1[V]. It is found that resistance value of TiN thin film is small and also TiN thin film has more current than the thin film which is not evaporated by TiN thin film. When Al electrode is evaporated of SiO$_2$ thin film, spiking occurs, but the spiking can be prevented with evaporation of TiN between SiO$_2$ and Al layers and this thin films in made easily because of its good attachment. With the increase of voltage, the resistance is changed into non-linear pattern and the bidirectional varistor characteristic is shown and then its theory can be verified by this experiment. Accordingly, when TiN is evaporated of Si Wafer(n-100), it obtains better voltage-resistance than thin film which is not evaporated and also when varistor character is used electrically to automatic control element such as elimination of flame, power distribution arrestor and constant voltage compensation, satisfactory reproducibilities are expected.

• 한국전기전자재료학회논문지
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• 제27권3호
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• pp.178-183
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• 2014

Recently, various type of nanomaterials such as nanorod, nanowire, nanotube and their core/shell nanostructures have attracted much attention in photocatalyst due to their unique properties. Among them, Type-II core/shell heterostructures have extensively studied because it has exhibited improved electrical and optical properties against their single-component nanostructure. Such structures are expected to offer high absorption efficiency and fast charge transport due to their stepwised energetic combination and large internal surface area. Thus, it has been considered as potential candidates for high efficient photocatalytic activity. In this work, we introduce a novel chemical conversion process to synthesize Type-II ZnO/ZnSe core/shell heterostructures. A plausible conversion mechanism to ZnO/ZnSe core/shell heterostructres was proposed based on SEM, XRD, TEM and XPS analysis. The ZnO/ZnSe heterostructures exhibited excellent photocatalytic activity toward the decomposition of RhB dye compared to the ZnO nanorod arrays due to enhanced light absorption and the type-II cascade band structure.

• 전기전자학회논문지
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• 제21권1호
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• pp.73-76
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• 2017

실리콘카바이드 소자는 넓은 밴드갭을 갖는 물질로서 많은 주목을 받아왔다. 특히 4H-SiC 쇼트키 배리어 다이오드는 빠른 스위칭 속도와 낮은 순방향 전압강하의 특성으로 인해 널리 사용되고 있다. 그러나 쇼트키 배리어 다이오드의 낮은 신뢰성으로 인한 문제로 대안인 Super Barrier Rectifier(SBR)가 연구되었다. 본 논문은 4H-SiC trench-type accumulation super barrier rectifier(TASBR)를 분석하고 제안한다. 2D 시뮬레이션을 통해 본 구조는 심각한 역방향 저지전압의 감소와 누설전류의 증가가 없는 동시에 순방향 전압 강하는 21.06% 향상됨을 확인 할 수 있었다. 이러한 새로운 정류기 구조를 이용하면 전력손실이 적은 애플리케이션을 기대할 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.80-80
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• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.

• 한국항행학회논문지
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• 제17권5호
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• pp.491-496
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• 2013

본 논문에서는 보안등의 통합 모니터링과 제어를 위한 3G 이동통신용 RF모듈에 적용 가능한 반파장 폴디드 슬롯 안테나를 제안하였다. 제안된 안테나는 입력임피던스가 $50{\Omega}$에 가까운 총 길이가 ${\lambda}g$인 전형적인 폴디드 슬롯 안테나의 장점을 유지하면서 절반의 크기를 가지고 PCB의 가장자리에 위치할 수 있도록 변형된 폴디드 슬롯 구조이다. 제안된 안테나는 국내 3G 이동통신 대역용으로, $40.5{\times}62mm^2$의 기판 중 상단 $40.5{\times}10mm^2$의 공간을 이용하여 설계 및 제작하였다. 제작된 안테나를 측정한 결과, 390 MHz의 대역폭, 2 dBi의 이득을 얻을 수 있었다.

• 한국자기학회지
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• 제9권3호
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• pp.127-130
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• 1999

사각형구조를 갖는 Ru 단층에서 살창상수와 자성과의 관계를 총 에너지 총 퍼텐셜 보강 평면 파동(FLAPW) 에너지띠 방법에 의해 연구하였다. 반강자성상태를 고려하기 위해 2개의 원자를 포함하는 사각형에서 살창상수가 7.30a.u.보다 큰 경우는 강자성이었고 그 보다 작은 경우에는 상자성이었다. 반강자성상태도 고려하였으나 총 에너지 계산결과 그 가능성은 없었다. 총 에너지 최소값은 살창상수가 6.53a.u.인 경우로 이 때의 자기적 상태는 상자성이었다. Ag의 살창상수값 근처인 7.72a.u.에서 자기모멘트는 2.49$\mu$B로 계산되었다. 살창상수가 7.86a.u.인 경우에 자기모멘트가 거의 포화되었으며 그 때의 자기모멘트는 2.57$\mu$B이었다.

• 한국전자통신학회논문지
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• 제16권4호
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• pp.763-770
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• 2021

본 논문에서는 ISM 대역에서 동작하는 BAN(Body Area Network) 신호의 영향을 배제하기 위해서 4.567 GHz에서 작동하는 온 바디 마이크로스트립 패치 안테나의 설계 및 최적화 과정을 제시하였다. 하지 해면골 골다공증 감시를 위한 이 안테나는 향상된 반사손실 및 대역폭을 가지면서, 경박단소하도록 설계하였다. 적용된 하지 주변 구조는 5층 유전체 평면으로 구조화 하였으며, 손실을 고려한 각층의 복소유전상수는 다중 Cole-Cole 모델 매개변수를 사용하여 계산하였으나, 정상 및 골다공증 해면골은 단극형 모델을 사용하였다. 팬텀상 동축급전 안테나의 반사손실은 4.567 GHz에서 -67.26 dB이고, 골다공증 경우 동일 주파수에서 반사손실차 𝚫S₁₁=35.88 dB이고, 공진 주파수 차는 약 7 MHz이다.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.387-392
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• 2019

$Dy^{3+}$ and $Eu^{3+}$-co-doped $La_2MoO_6$ phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the $La_2MoO_6$ phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of $100^{\circ}C$ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the $^5D_0{\rightarrow}^7F_2$ and $^5D_0{\rightarrow}^7F_4$ transitions of the $Eu^{3+}$ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of the $Dy^{3+}$ ions. The results suggest that $La_2MoO_6$ phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.

• International Journal of Computer Science & Network Security
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• 제22권12호
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• pp.245-251
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• 2022

In this paper, a high gain, broadband planar vivaldi antenna (PVA) by utilizing a broadband stripline feed is developed for wireless communication for IoT systems. The suggested antenna is designed by attaching a tapered-slot construction to a typical vivaldi antenna, which improves the antenna's radiation properties. The PVA is constructed on a low-cost FR4 substrate. The dimensions of the patch are 1.886λ₀×1.42λ₀×0.026λ₀, dielectric constant Ɛ_r=4.4, and loss tangent δ=0.02. The width of the feed line is reduced to improve the impedance bandwidth of the antenna. The computed reflection coefficient findings show that the suggested antenna has a 46.2% wider relative bandwidth calculated at a 10 dB return loss. At the resonance frequencies of 6.5 GHz, the studied results show an optimal gain of 5.82 dBi and 85% optimal radiation efficiency at the operable band. The optometric analysis of the proposed structure shows that the proposed antenna can achieve wide enough bandwidth at the desired frequency and hence make the designed antenna appropriate to work in satellite communication and medical internet of things (M-IoT) healthcare applications.