• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.387-391
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• 2012

Graphene was fabricated onto Ni/Si substrate using a rapid-thermal pulse CVD and they were transferred onto the Ti/PES flexible substrate. For top electrode applications of the BMNO dielectric films, graphene was patterned using a argon plasma. Through an AFM image and a leakage current density of the BMNO films grown onto various bottom electrodes before and after bending test, BMNO films grown onto the graphene bottom electrode showed no change of the microstructure and the leakage current density after the bend.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.13-17
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• 2002

Ga$_2$O$_3$ nanomaterials were synthesized from mechanically ground GaN powders with thermal annealing Ga$_2$O$_3$ nanobelts were farmed in a nitrogen atmosphere, while Ga$_2$O$_3$ nanoparticles were formed inan oxygen atmosphere. The structural properties of the Ga$_2$O$_3$ nanomaterials were investigated by X-ray diffractometer (XRD) and high-resolution transmission eleotron microscope (HRTEM). The study of field emission scanning electron microscopy (FESEM) on the microstructures of nanomaterials revealed that the nanobelts are with the range of about 10∼200nm width and 10∼50nm thickness, and that nanoparticles are with the range of about 20∼50nm radius. On the basis of XRD and HRTEM data, we determined that the nanobelts grow toward a direction perpendicular to the (010) lattice plane and that they are enclosed by facets of the (10T) and (101) lattice planes. The formation of the nanobelts may be described by the vapor-solid(VS) mechanism, and the supersaturation device of gaseous phase may play an important role in the formation of Ga$_2$O$_3$ nanomaterials.

• Applied Science and Convergence Technology
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• 제23권3호
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• pp.113-127
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• 2014

For more than five decades, silicon has dominated the semiconductor industry that supports memory devices, ICs, photovoltaic devices, etc. Photoluminescence (PL) is an attractive silicon characterization technique because it is contactless and provides information on bulk impurities, defects, surface states, optical properties, and doping concentration. It can provide high resolution spectra, generally with the sample at low temperature and room-temperature spectra. The photoluminescence properties of silicon at low temperature are reviewed and discussed in this study. In this paper, silicon bulk PL spectra are shown in multiple peak positions at low temperature. They correspond with various impurities such as In, Al, and Be, phonon interactions, for example, acoustical phonons and optical phonons, different exciton binding energies for boron and phosphorus, dislocation related PL emission peak lines, and oxygen related thermal donor PL emissions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.137-140
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• 1993

Electrical properties and thermal annealing effects of $C_{22}$-quinolium(TCNQ) Langmuir-Blodgett(LB) films were studied. Typical current-voltage(I-V) characteristics along the perpendicular direction chow an anomalous behavior of breakdown near the electric-field strength of $10^{6}$V/cm. To see the thermal influence of the specimen, current was measured as a function of temperature(20∼$180^{\circ}C$). It shows that the current increases about 4 orders of magnitude near 60∼$70^{\circ}C$ and remains constant far a while up to ∼$150^{\circ}C$ and then suddenly drops. Such increase of current near 60∼$70^{\circ}C$ seems tn be related to a softness of alkyl chains. Besides the electrical measurements, UV/visible absorption(300∼800 nm) of the thermally annealed sample was measured to see the internal-structure change. It is found that there are four characteristic peaks. At 494 nm, the optical absorption of the thermally annealed specimen at $60^{\circ}C$ starts increase and stays almost constant upto∼ $140^{\circ}C$. And eventually it disappears above $180^{\circ}C$. After heat treatment of the specimen up to $150^{\circ}C$, Uv/visible absorption was measured while cooling.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.327-327
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• 2010

In this paper, an investigation of factors affecting piezoelectric transformers is presented by ATILA software. These transformers are multi-layer piezoelectric transformers in square shape $28\;{\times}\;28\;mm$ and operate in first vibration mode for step-down function. The piezoelectric transformers were modeled in 3D-dimension and analyzed using finite element method in ATILA software, a popular software in piezoelectric analysis. Modal and harmonic modules were used in this process. Effective factors to the properties of piezoelectric transformers including different input electrode patterns, directions of polarization, sizes of connective comer, number of layers were examined on the simulated model using input voltage of 20 V and load resistance of $100\;{\Omega}$. Moreover, thermal analysis was also obtained with conditions of input voltage of 5 V and no-load.

• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.587-593
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• 1995

Silicone oils used insulating substances exhibit the both of organic and inorganic properties, and it has many superior characteristics such as the high thermal resistance and low thermal oxidation level when compared to other insulation oils. In order to investigate the dielectric loss due to the increase of viscosity, silicone oils of viscosity 1, 2, 5[cSt] had been chosen as the specimen and experiment has been performed in the temperature range of -70[.deg. C] - 65[.deg. C] and frequency range of 30 - 1*10$\^$5/[Hz]. As a result, the linear decrease of loss at low frequency region in high temperature was due to the influence of applying frequency, whereas the increase of loss at high frequency region was contributed by electrode's resistance. And increasing viscosity, the activation energy increased from 3.77[kcal/mole] to 7.21[kcal/mole]. The dipole moment of specimen was become clear 1.48 - 2.26[debyel in high temperature region(5 - 65[.deg. C]) and 1.05 - 1.80[debye] in low temperature region (-70 - -25[.deg. C])respectively.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.441-447
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• 2003

When a SnO$_2$ thin film was deposited by thermal CVD, two different types of growth behavior that were dependent on the deposition temperature were observed. The film grown at 475$^{\circ}C$ had a wide grain size distribution and a faceted surface shape. On the other hand, the film grown at 5$25^{\circ}C$ had a relatively narrow grain size distribution and a rounded sulfate shape. The aspects of grain shape and growth behavior agree well with the theory of gram growth and a roughening transition. The charge tarrier density decreased with deposition time. According to photoluminescence measurements, the peak intensity of the spectra occurred at approximately 2.5 eV, which is related to oxygen vacancies, and decreased with increasing of deposition time. These measurement results suggest that the number of oxygen vacancies, which is related to the electrical conductivity, decrease with deposition time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.335-338
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• 1999

The effect of monoclinic $ZrO_2$(pure) and tetragonal $ZrO_2$ containing 5.35wt% $Y_2$$O_3$(Y-TZP) addition on the mechanical properties and thermal shock resistance of $Al_2$$O_3$ ceramic were investigated. The addition of $ZrO_2$(m) and Y-TZP increased sintering density of $Al_2$$O_3$. The vickers hardness increased with increasing the volume fraction of Y-TZP going through a maximum at 20wt%. The hardness of the specimens was found to be depend on the sintering density. With increasing the volume fraction of $ZrO_2$(m) and Y-TZP, the fracture toughness of the composite is increased. This result may be taken as evidence that toughening of ${Al_2}{O_3}$ can also be achieved by the transformation toughening and microcrack toughening of $ZrO_2$. The property of the& shock for ${Al_2}{O_3}$-$ZrO_2$ composites was improved by increasing the volume fraction of monoclinic $ZrO_2$(pure).Grain size increased with increasing the volume fraction of $ZrO_2$.

• 한국전기전자재료학회논문지
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• 제32권3호
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• pp.219-222
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• 2019

In this study, we fabricated plate-type shunt resistors with thermal stability by parallelly connecting metal alloy plates with positive temperature coefficient of resistance (TCR) and carbon nanotube (CNT) plates with negative TCR. The metal alloy plates, which were prepared by alloying Cu and Mn with a composition of 91 wt% of Cu and 9 wt% of Mn, showed around $800ppm/^{\circ}C$ of TCR, and the CNT plates prepared from the CNT solution by using the vacuum filtration method showed around $-800ppm/^{\circ}C$ of TCR. The shunt resistor that was fabricated by stacking metal alloy plates and CNT plates in this work showed about $46.93ppm/^{\circ}C$ of TCR. Therefore, we conclude that a shunt resistor with low TCR can be realized by simply adjusting the TCR of the metal alloy only, because the TCR of the CNT plate has an identical value.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.65-65
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• 2011

We report the application of conducting metal oxide electrodes for semiconducting metal oxide gas sensors. Pt interdigitated electrodes have been commonly used for metal oxide gas sensor because of the low resistivity, excellent thermal and chemical stability of Pt. However, the high cost of Pt is an obstacle for the wide use of metal oxide gas sensors compared with its counterpart electrochemical gas sensors. Meanwhile, relatively low-cost conducting metal oxides are widely being used for light-emitting diodes, flat panel displays, solar cell and etc. In this work, we have fabricated $WO_3$ and $SnO_2$ thin film gas sensors using interdigitated electrodes of conducting metal oxides. Thin film gas sensors based on conducting metal oxides exhibited superior gas sensing properties than those using Pt interdigitated electrodes. The result was attributed to the low contact resistance between the conducting metal oxide and the sensing material. Consequently, we demonstrated the feasibility of conducting metal oxide interdigitated electrodes for novel gas sensors.