• 대한화학회지
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• 제53권1호
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• pp.17-26
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• 2009

Isonicotinic acid hydrazid의 Hydrazones, 즉, N-isonicotinamido-furfuralaldimine (INH-FFL), N-isonicotnamido- cinnamalidine (INH-CIN) 및 N-isonicotnamido-3',4',5'-trimethoxybenzaldimine (INH-TMB)를 isonicotinic acid hydrazide와 예를 들면 furfural, cinnamaldehyde 또는 3,4,5-trimethoxy-benzaldehyde 등과 같 은 각각의 방향족 알데히드와의 반응으로부터 제조하였다. INH-FFL, INH-CIN and INH-TMB와 같은 새로운 hydrazones을 코발트(II) 염과 반응시켜 새로운 일련의 15개 코발트(II) 착물을 제조하였다. 적외선 분광 데이타를 통해 hydrazone 리간드들이 $Co^{2+}$ 이온에 대해 N, O 주개원자의 배열을 갖는 두자리 리간드임을 규명하였다. 착물 의 특성은 원소분석, 수자율, 전도도, 적외선 및 전자 스펙트럼 측정을 통해 조사하였다. 분석 데이터로부터 착물은 [$Co(L)_2X_2$] 및 [$Co(L)_3](ClO_4)_2$ (L = INH-FFL, INH-CIN 또는 INH-TMB, 그리고X = $Cl^-,\;{NO_3}^-,\;NCS^-$ 또는 $CH_3COO^-$)의 일반적 조성을 가짐을 알 수 있었다. 열무게법으로부터 착물의 열적 행동을 조사하였다. 전자 스펙 트럼 결과와 자화율 측정으로부터 코발트(II) 킬레이트가 6배위의 기하구조를 이루고 있다는 것을 확인할 수 있었 다. 코발트(II) 착물과 약간의 표준약물에 대한 향균성으로부터 이들 착물이 매우 적합한 향균성질을 가짐을 알 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.56-56
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• 2010

Single-walled carbon nanotubes (SWCNTs) have attracted much attention as a promising material for transparent conducting films (TCFs), due to their superior electrical conductivity, high mechanical strength, and complete flexibility as well as their one-dimensional morphological features of extremely high length-to-diameter ratios. This study investigated three kinds of SWCNTs with different purities: as-produced SWCNTs (AP-SWCNTs), thermally purified SWCNTs (TH-SWCNTs), thermally and acid purified SWCNTs (TA-SWCNTs). The purity of each SWCNT sample was assessed by considering absorption peaks in the semiconducting ($S_{22}$) and metallic ($M_{11}$) tubes with UV-Vis NIR spectroscopy and a metal content with thermogravimetric analysis (TGA). The purity increased as proceeding the purification stages from the AP-SWCNTs through the thermal purification to the acid purification. The samples containing different contents of SWCNTs were dispersed in water using sodium dodecyl benzensulfate (SDBS). Aqueous suspensions of different purities of SWCNTs were prepared to have similar absorbances in UV-Vis absorption measurements so that one can make the TCFs possess similar optical transmittances irrespective of the SWCNT purity. Transparent conductive SWCNT networks were formed by spraying an SWCNT suspension onto a poly(ethyleneterephthalate) (PET) substrate. As expected, the TCFs fabricated with AP-SWCNTs showed very high sheet resistances. Interestingly, the TH-SWCNTs gave lower sheet resistances to the TFCs than the TA-SWCNTs although the latter was of higher purity in the SWCNT content than the former. The TA-SWCNTs would be shortened in length and be more bundled by the acid purification, relative to the TH-SWCNTs. For both purified (TH, TA) samples, the subsequent nitric acid ($HNO_3$) treatment greatly lowered the sheet resistances of the TCFs, but almost eliminated the difference of sheet resistances between them. This seems to be because the electrical conductivity increased not only due to further removal of surfactants but also due to p-type doping upon the acid treatment. The doping effect was likely to overwhelm the effect of surfactant removal. Although the nitric acid treatment resulted in the similar. electrical properties to the two samples, the TCFs of TH-SWCNTs showed much lower sheet resistances than those of the TA-SWCNTs prior to the acid treatment.

• 한국전자통신학회논문지
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• 제14권3호
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• pp.497-504
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• 2019

본 연구에서는 고주파 마그네트론 스퍼터링 법을 이용하여 $HfO_2$ 박막을 제작하고, 질소 분위기에서 급속 열처리 온도에 따른 $HfO_2$ 박막의 구조적 및 광학적 특성을 조사하였다. XRD 측정을 통해 열처리 유무에 상관없이 $HfO_2$ 박막은 다결정 구조를 가짐을 확인할 수 있었고, 열처리 온도가 증가함에 따라 반가폭은 감소하는 추세를 나타내었다. 박막의 표면을 AFM 으로 조사한 결과, $600^{\circ}C$ 에서 열처리한 박막의 표면 거칠기가 3.454 nm 로 가장 작은 값을 나타내었다. 모든 $HfO_2$ 박막들은 가시광 영역에서 약 80% 정도의 투과도를 나타내었다. 또한 투과도와 반사도로부터 구한 굴절률과 셀마이어 분산 관계로부터, 파장에 따른 $HfO_2$ 의 굴절률을 예측할 수 있었다. $600^{\circ}C$ 에서 열처리 한 $HfO_2$ 박막이 2.0223 (${\lambda}=632nm$) 의 높은 굴절률과 0.963 의 높은 우수한 충진율을 나타내었다.

• 한국산학기술학회논문지
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• 제17권9호
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• pp.502-507
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• 2016

이산화바나듐은 섭씨 68도에서 금속-절연체 상전이 특성을 나타내는 써모크로믹(thermochromic) 소재로서, 상전이 현상이 일어날 때 광학적, 전기적 성질이 급격히 변화하며, 이러한 상전이 현상은 가역적인 특성을 가지고 있다. 이산화바나듐의 금속-절연체 상전이 현상을 응용하기 위하여 상전이 온도를 상온 부근으로 낮추고자하는 많은 시도들이 있었으며, 직경 100 nm의 1차원 나노구조를 갖는 이산화바나듐 나노와이어의 경우 $29^{\circ}C$ 근처에서 상전이 현상이 일어남이 보고되었다. 본 연구에서는 기상 수송 방법(vapor transport method)을 사용하여 1차원 또는 2차원 나노구조를 갖는 이산화바나듐을 성장시켰다. 특히 동일한 성장 조건에서도 기판에 따라 다른 형태로 이산화바나듐이 성장하는 것을 확인하였다. 즉 Si 기판($Si{\setminus}SiO_2$(300 nm) 위에서는 1차원 나노와이어 형태의 이산화바나듐이 성장하였고, 그래핀 나노시트 위에서 합성된 이산화바나듐은 2차원 또는 3차원 나노구조를 가지고 성장하였다. 바나듐 옥사이드 나노구조체의 성장에 사용된 Si 웨이퍼 위에 박리-전사된 그래핀 나노시트 기판과 thermal CVD 시스템으로 성장된 1D 또는 2D & 3D 나노 구조를 갖는 $VO_2$의 결정학적 특성을 Raman 분광학으로 분석하였다. Raman 분석결과 성장된 바나듐 옥사이드는 $VO_2$ 상을 갖는 것을 확인하였다.

• 동아시아식생활학회지
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• 제23권6호
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• pp.789-798
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• 2013

In the present study, optimization on ${\beta}$-glucanase-assisted extraction was made in order to isolate waxy barley starch from domestic cultivar using the D-optimal design suitable for response surface methodology (RSM). The results demonstrated that the amount of enzyme was found to be a major influencing factor on the extraction yield, which was substantially increased by increasing the amount of enzyme. It was also influenced by the reaction time and amount of water addition; however, the two factors were less influential than the amount of enzyme. The optimized condition by RSM for the reaction time was found to be 2.63 hours and amount of enzyme 1.7%, and amount of water addition 4.38 times the weight of raw material. With the enzyme treatment, the starch content in residues (R), particularly in R1 and R5, was reduced considerably, resulting in an increase in the extraction yield and therefore primarily and effectively releasing B-type starch small granule confirmed by scanning electronic microscopy. In addition, the study determined the physicochemical properties of isolated waxy starch (i.e., purity, water adsorption capacity, thermal properties, rheology and starch morphology) and compared them with those from the enzyme-not treated sample. It was found that they were almost similar to each other, except for the purity of starch, which was lower in the enzyme-treated sample than in the enzyme-not treated one.

• 폴리머
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• 제32권3호
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• pp.251-255
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• 2008

본 연구는 전자 부품 운반용으로 가장 많이 사용되는 수지인 폴리스티렌에 금속염 화합물과 에스터계 화합물로 제조된 대전방지제를 혼합하여 대전방지성능, 기계적 강도를 높인 대전방지 재료를 제시하였다. 이를 위하여 상용화제인 Poly(styrene-co-maleic anhydride) 내의 MAH 함량을 달리하여 기계적, 열적, 그리고 전기적 특성에 대한 연구를 하였다. HIPS(75 wt%)/TPU(25 wt%) 블렌드의 상용성의 전기적 특성을 확인하기 위해서 잔류 공간전하를 측정한 결과 PS-co-MAH(MAH : 25 wt%)가 첨가된 재료에서 상대적으로 작은 잔류 전하가 발견되었으며, 인장강도도 가장 높은 수치를 보였다. 또한 대전 방지제를 첨가했을 때 상용화제를 첨가하지 않은 재료보다 우수한 정전기 성능을 확인할 수 있었다. 결과적으로 HIPS/TPU 블렌드시 PS-co-MAH가 첨가되어 두 고분자의 계면 결합을 우수하게 하며, 대전방지제의 분산성을 좋게 함을 확인할 수 있다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.142.2-142.2
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• 2018

One-dimensional metal oxide nanostructures have attracted considerable research activities owing to their strong application potential as components for nanosize electronic or optoelectronic devices utilizing superior optical and electrical properties. In which, semiconducting $SnO_2$ material with wide-bandgap Eg = 3.6 eV at room temperature, is one of the attractive candidates for optoelectronic devices operating at room temperature [1, 2], gas sensor [3, 4], and transparent conducting electrodes [5]. The synthesis and gas sensing properties of semiconducting $SnO_2$ nanomaterials have become one of important research issues since the first synthesis of SnO2 nanowires. In this study, $SnO_2$ nanowire networks were synthesized on a basis of a two-step process. In step 1, Sn spheres (30-800 nm in diameter) embedded in $SiO_2$ on a Si substrate was synthesized by a chemical vapor deposition method at $700^{\circ}C$. In step 2, using the source of these Sn spheres, $SnO_2$ nanowire (20-40 nm in diameter; $1-10{\mu}m$ in length) networks on a spherical Sn surface were synthesized by a thermal oxidation method at $800^{\circ}C$. The Au layers were pre-deposited on the surface of Sn spherical and subsequently oxidized Sn surface of Sn spherical formed SnO2 nanowires networks. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images indicated that $SnO_2$ nanowires are single crystalline. In addition, the $SnO_2$ nanowire is also a tetragonal rutile, with the preferred growth directions along [100] and a lattice spacing of 0.237 nm. Subsequently, the $NO_2$ sensing properties of the $SnO_2$ network nanowires sensor at an operating temperature of $50-250^{\circ}C$ were examined, and showed a reversible response to $NO_2$ at various $NO_2$ concentrations. Finally, details of the growth mechanism and formation of Sn spheres and $SnO_2$ nanowire networks are also discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.122-122
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• 2008

Recently, Metal/Alumina/Silicon-Nitride/Silicon-Oxide/Silicon (MANOS) structures are one of the most attractive candidates to realize vertical scaling of high-density NAND flash memory [1]. However, as ANO layers are miniaturized, negative and positive bias temperature instability (NBTI/PBTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density increase, ${\Delta}D_{it}$, the gate leakage current, ${\Delta}I_G$. and the retention characteristics, in MONOS capacitors, becomes an important issue in terms of reliability. It is well known that tunnel oxide degradation is a result of the oxide and interfacial traps generation during FN (Fowler-Nordheim) stress [2]. Because the bias temperature stress causes an increase of both interfacial-traps and fixed oxide charge could be a factor, witch can degrade device reliability during the program and erase operation. However, few studies on NBTI/PBTI have been conducted on improving the reliability of MONOS devices. In this work, we investigate the effect of post-annealing gas on bias temperature instability (BTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density shift, ${\Delta}I_G$ retention characteristics, and the gate leakage current characteristics of MANOS capacitors. MANOS samples annealed at $950^{\circ}C$ for 30 s by a rapid thermal process were treated via additional annealing in a furnace, using annealing gases $N_2$ and $N_2-H_2$ (2 % hydrogen and 98 % nitrogen mixture gases) at $450^{\circ}C$ for 30 min. MANOS samples annealed in $N_2-H_2$ ambient had the lowest flat band voltage shift, ${\Delta}V_{FB}$ = 1.09/0.63 V at the program/erase state, and the good retention characteristics, 123/84 mV/decade at the program/erase state more than the sample annealed at $N_2$ ambient.

• Elastomers and Composites
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• 제48권1호
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• pp.67-75
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• 2013

E-TPE(Engineering Thermoplastic Polyether Ester)는 Ester 관능기를 갖는 Elastomer 소재로서 리사이클이 가능하며 빠른 가공성을 지닌다. 또한 경량성이 뛰어나 자동차의 경우 연비향상에 도움을 주는 친환경 소재로 부각되고 있다. 고무와 엔지니어링 플라스틱의 특성을 모두 가지고 있는 E-TPE는 사용 가능한 온도영역이 넓고, 내열성 및 내유성이 우수하여 자동차 부품소재분나 전기전자분야의 신소재로 주목받고 있으나 국내에서는 원천기술이 부족하여 전량 수입에 의존하고 있는 실정이므로 연구개발이 시급하다. 본 연구에서는 하드 세그먼트로 폴리에스터계(TPEE)를 base로 하여 소프트 세그먼트로 Ethylen-prophylene-Copolymer와 CSM(Choloro sulphonated polyethylene Rubber), VAMAC(Ethylene Acrylic Rubber), NBR(Acrylonitrin Butadiene Rubber)의 탄성체를 1,3-Phenylene-bisoxazoline 가교제로 동적가교 시켜 함량과 첨가된 고무에 따른 물성을 관찰하였다. 그 결과 NBR 첨가된 동적가교물의 물성이 다른 고무에 비해 내열성 및 내유성 향상에 되었음을 확인하였다.