• 한국전기전자재료학회논문지
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• 제26권8호
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• pp.597-601
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• 2013

The accelerated thermal aging of a CSPE were carried out for 0, 80.82, 161.63 days at $100^{\circ}C$, which are equal to 0, 40 and 80 years of aging at $50^{\circ}C$, respectively. The volume electrical resistivities of the seawater and freshwater flooding were measured through 3-terminal circuit diagram. The volume electrical resistivities of the 0y, 40y and 80y were $2.454{\times}10^{13}{\sim}1.377{\times}10^{14}{\Omega}{\cdot}cm$, $1.121{\times}10^{13}{\sim}7.529{\times}10^{13}{\Omega}{\cdot}cm$ and $1.284{\times}10^{13}{\sim}8.974{\times}10^{13}{\Omega}{\cdot}cm$ at room temperature, respectively. The dielectric constant of the 0y, 40y and 80y were 2.922~3.431, 2.613~3.285 and 2.921~3.332 at room temperature, respectively. It is certain that the ionic ($Na^+$, $Cl^-$, $Mg^{2+}$, ${SO_4}^{2-}$, $Ca^{2+}$, $K^+$) conduction current was formed by the salinity of the seawater. The volume electrical resistivity of the cleaned CSPE via freshwater trends slightly upward with the number of dried days at room temperature. As a result, the $CH_2$ component of thermally accelerated aged CSPE decreased after seawater and freshwater flooding for 5 days respectively, whereas the atoms such as Cl, O, Pb, Al, Si, Sb, S related with the conducting ion ($Na^+$, $Cl^-$, $Mg^{2+}$, ${SO_4}^{2-}$, $Ca^{2+}$, $K^+$) component increased relatively.

• 센서학회지
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• 제11권6호
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• pp.342-349
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• 2002

본 논문에서는 새로운 방식의 금속 산화물 감지막의 형성 기술에 대해서 제안을 하였다. Sn 증착을 위해 사용된 기판은 Pt 전극을 가진 실리콘 웨이퍼를 이용하였다. 증착 방식은 금속 Sn이 연속적인 막이 아닌 island로만 형성된 상태로 하였다. 제안된 방식의 최적의 Sn 증착 조건을 구하기위해 Pt 전극간의 저항이 $1\;k{\Omega}$, $5\;k{\Omega}$, $10\;k{\Omega}$ 및 $50\;k{\Omega}$이 되도록 Sn을 증착하여 시료를 제작하였다. 또한 일반적인 방식과 새롭게 제안된 방식의 시료를 비교하기 위해서 Sn 막의 두께가 $1,500\;{\AA}$인 시료를 준비하였다. 이것들을 $700^{\circ}C$의 산소분위기에서 3시간 동안 산화를 하여 $SnO_2$를 형성하였다. 산화물 감지막들의 특성 평가를 위해서 SEM, XRD 및 AFM을 이용하였다. 분석을 통하여 $10\;k{\Omega}$의 시료($300\;{\AA}$)가 최적의 감지막 증착 조건임을 알았다. 또한 제조된 감지막을 다양한 농도의 부탄, 프로판 및 일산화탄소에 대해서 동작온도 $250^{\circ}C$, $300^{\circ}C$ 및 $350^{\circ}C$의 경우에 대해서 측정하였다. 그 결과 촉매를 첨가하지 않았음에도 불구하고 모든 가스에 대한 높은 감도 특성을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.429-429
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• 2007

For various applications of liquid crystal displays (LCDs), the uniform alignment of liquid crystal (LC) molecules on treated surfaces is significantly important. Generally, a rubbing method has been widely used to align the LC molecules on polyimide (PI) surfaces. Rubbed PI surfaces have suitable characteristics, such as uniform alignment. However, the rubbing method has some drawbacks, such as the generation of electrostatic charges and the creation of contaminating particles. Thus, we strongly recommend a non contact alignment technique for future generations of large high-resolution LCDs. Most recently, the LC aligning capabilities achieved by ultraviolet and ion-beam exposures which are non contact methods, on diamond-like carbon (DLC) inorganic thin film layers have been successfully studied because DLC thin films have a high mechanical hardness, a high electrical resistivity, optical transparency, and chemical inertness. In addition, nitrogen-doped DLC (NDLC) thin films exhibit properties similar to those of the DLC thin films and a higher thermal stability than the DLC thin films because C:N bonding in the NDLC thin filmsis stronger against thermal stress than C:H bonding in the DLC thin films. Our research group has already studied the NDLC thin films by an ion-beam alignment method. The $SiN_x$ thin films deposited by plasma-enhanced chemical vapor deposition are widely used as an insulation layer for a thin film transistor, which has characteristics similar to those of DLC inorganic thin films. Therefore, in this paper, we report on LC alignment effects and pretilt angle generation on a $SiN_x$, thin film treated by ion-beam irradiation for various N ratios

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.196-196
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• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, has grabbled appreciable attention due to its extraordinary mechanical, thermal, electrical, and optical properties. Based on the graphene's high carrier mobility, high frequency graphene field effect transistors have been developed. Graphene is useful for photonic components as well as for the applications in electronic devices. Graphene's unique optical properties allowed us to develop ultra wide-bandwidth optical modulator, photo-detector, and broadband polarizer. Graphene can support SPP-like surface wave because it is considered as a two-dimensional metal-like systems. The SPPs are associated with the coupling between collective oscillation of free electrons in the metal and electromagnetic waves. The charged free carriers in the graphene contribute to support the surface waves at the graphene-dielectric interface by coupling to the electromagnetic wave. In addition, graphene can control the surface waves because its charge carrier density is tunable by means of a chemical doping method, varying the Fermi level by applying gate bias voltage, and/or applying magnetic field. As an extended application of graphene in photonics, we investigated the characteristics of the graphene-based plasmonic waveguide for optical signal transmission. The graphene strips embedded in a dielectric are served as a high-frequency optical signal guiding medium. The TM polarization wave is transmitted 6 mm-long graphene waveguide with the averaged extinction ratio of 19 dB at the telecom wavelength of $1.31{\mu}m$. 2.5 Gbps data transmission was successfully accomplished with the graphene waveguide. Based on these experimental results, we concluded that the graphene-based plasmonic waveguide can be exploited further for development of next-generation integrated photonic circuits on a chip.

• 전자공학회논문지 IE
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• 제49권2호
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• pp.1-8
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• 2012

단사정 구조의 순수 $ZrO_2$ 또는 5.35wt%의 $Y_2O_3$를 첨가한 정방정 구조의 $Y_2O_3(Y-TZP)$를 $Al_2O_3$에 첨가하여 그 기계적 특성 및 열충격 저항성을 연구하였다. $ZrO_2(m)$와 Y-TZP의 첨가량이 커짐에 따라 $Al_2O_3$의 소결 밀도가 증가하였다. 또한 Y-TZP의 첨가량이 증가함에 따라 비커스 경도도 증가하였고 첨가량 20wt%에서 최고값을 나타내었다. 시편의 경도는 소결 밀도에 의존함을 알 수 있었다. $ZrO_2(m)$나 Y-TZP 첨가량의 증가는 파괴인성을 향상시키는 결과를 얻을 수 있었다. 이러한 결과로 $Al_2O_3$의 경도는 $ZrO_2$의 transformation toughening 뿐 아니라 미세균열 강화에서도 얻어짐을 알 수 있었다. 단사정 구조의 순수 $ZrO_2$의 첨가는 $Al_2O_3-ZrO_2$의 열 충격 저항성을 향상시켰다. 결정입도는 $ZrO_2$의 첨가량이 증가함에 따라 커진다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.42.2-42.2
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• 2010

Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.

• 대한화학회지
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• 제53권6호
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• pp.683-692
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• 2009

본 연구는Isoniazid의 hydrazone으로부터 유도된 새로운 리간드를 갖는 몇 가지 새로운 니켈(II) 착물의 합성에 대해 보고한다. 착물의 조성은 [$Ni(L)_2X_2$] 또는 $[Ni(L)_3](ClO_4)_2$ {L = N-isonicotinamidofurfuraldimine(INH-FFL), N-isonicotinamido-3',4',5'-trimethoxybenzaldimine (INH-TMB) 또는 N-isonicotinamido-cinnamalidene (INH-CIN) 및 X=$Cl^-$, ${NO_3}^-$, $NCS^-$ 또는 $CH_3COO^-$} 이다. 리간드 hydrazone 은 카보닐 산소와 아조메틴 질소를 통해서 중성의 두 자리 (N및 O주개) 리간드로 작용한다. 육면체 구조를 갖는 새로운 착물들은 원소분석, 분자질량분석, 자화율, 열분석과 적외선 및 전기적 스펙트럼을 이용한 전기화학 및 분광학적 연구를 통해 규명하였다. 니트로벤젠($PhNO_2$) 에서의 전기 전도성 측정에 의하면 [$Ni(L)_2X_2$] 및 $[Ni(L)_3](ClO_4)_2$ 착물들은 각각 비전해질 및 1:2전해질임을 알았다. 착물의 기하구조를 알기 위한 열적특성도 역시 연구되었다. 니켈(II) 착물 및 약간의 표준 약품의 항균성 및 항진균성 또한 연구되었고, 이를 통해 착물이 적당한 향균성 활동을 하는 것을 알 수 있었다.

• Composites Research
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• 제16권1호
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• pp.1-12
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• 2003

본 연구는 보강재의 부피분율이 49%, 56%, 63%첨가된 패키징용 SiC/Al복합재료를 가압주조법을 통해 개발하였다. SiC/Al복합재료는 0.8%의 무기성형제와 $Al_2$O$_3$섬유가 SiC입자에 비해 부피비 1:10의 비율로 첨가되었으며 새로이 고안된 몰드에서 제조되었다. 제조된 SiC/Al복합재료에 대해 30-300 구간에서 열팽창 계수를 측정하고, FEM수치해석과 비교하여 온도에 따른 특성을 분석하였다. 실험결과 SiC/Al복한재료의 열팽창계수는 혼합법칙, Turner모델의 중간값을 가졌으며 상온에서는 Turner모델에 가깝다가 온도가 높아질수록 혼합법칙에 가까와졌다. 이러한 특성은 모재의 소성변형 및 잔류응력에 의한 것으로 본 연구에서 제안한 모재와 보강재 사이에 작용하는 평균응력 차이로부터 분석이 된다. 해석결파 모재의 소성변형이 시작되는 온도에서 SiC/Al복합재료의 열팽창계수가 급격히 증가하였으며, 가공 잔류응력은 이러한 소성변형의 시작온도를 고온으로 이동시킴으로써 열팽창계수에 영향을 끼침을 밝혔다. 이러한 일련의 연구를 통해 온도에 따른 열팽창 특성은 복수입자모델에 의한 2차인 해석을 통해 성공적으로 분석됨을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.851-856
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• 2003

We have investigated the material and electrical properties of $Bi_{4-x}La_xTi_3O_{12}$ (BLT) ferroelectric thin film for ferroelectric nonvolatile memory applications of capacitor type and single transistor type. The 120nm thick BLT films were deposited on $Pt/Ti/SiO_2/Si$ and $SiO_2/Nitride/SiO_2$ (ONO) substrates by the sol-gel spin coating method and were annealed at $700^{\circ}C$. It was observed that the crystallographic orientation of BLT thin films were strongly affected by the excess Bi content and the intermediate rapid thermal annealing (RTA) treatment conditions regardeless of two type substrates. However, the surface microstructure and roughness of BLT films showed dependence of two different type substrates with orientation of (111) plane and amorphous phase. As increase excess Bi content, the crystallographic orientation of the BLT films varied drastically in BLT films and exhibited well-crystallized phase. Also, the conversion of crystallographic orientation at intermediate RTA temperature of above $450^{\circ}C$ started to be observed in BLT thin films with above excess 6.5% Bi content and the rms roughness of films is decreased. We found that the electrical properties of BLT films such as the P-V hysteresis loop and leakage current were effectively modulated by the crystallographic orientations change of thin films.