• THE INTERNATIONAL COMMERCE & LAW REVIEW
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• 제75권
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• pp.71-94
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• 2017

The Rotterdam Rules is the first international maritime carriage of goods Convention that acknowledge electronic records of contracts of carriage. The Rules have developed separate chapter in relation to electronic transport records' issuing, transfer, etc. This paper aims to evaluate Rotterdam Rules' contribution to the use of electronic transport records. To achieve the aims firstly this paper have examined the related articles of Rotterdam Rules, Secondly in practical aspects, this paper explores the opportunities and obstacles which could be happened in practical procedures, applicable to transport industry, shipper and holder of electronic transport records. Findings could be summarized as follows, first the Rules shows high acceptability to whom it may involved in transport industry by simplify the contents of the Rules to avoid conflict with each countries' national laws. The Rules acknowledge the functional equivalence between paper and electronic transport records in specific provisions. This could be important development to facilitate the use of electronic transport records. But the Rules have not mentioned liability limit of transport industry when the problems arise from issuing, tele-transmission, transfer of the records. And the secure of the functional equivalence between paper and electronic transport records also could be remained in uncertain regime due to different stance of each national laws.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1002-1006
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• 2004

The studies on OLED(Organic Light-Emitting Diode) materials and structures have been researched in other to improve luminescence efficiency of OLED. Electrons and holes are injected into the devices, transported across the layer and recombine to form excitons, their profiles are sensitive to mobility velocity of electrons and holes. A suggested means of improving the efficiency of LEDs would be to balance the injection of electrons and holes into light emission layer of the device. In this paper, we demonstrate the difference of velocity between hole and electron by experiments, and compare with a data of simulation and experiment changing hole carrier transport layer thickness, so we get the optimal we improve luminescence efficiency. We improve understanding of the various luminescence efficiency through experiments and numerical analysis of luminescence efficiency in the hole carrier transport layer's thicknes.

• Electrical & Electronic Materials
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• 제7권6호
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• pp.462-472
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• 1994

In this paper, electron drift velocity is experimentally measured in SF$_{6}$+N$_{2}$ Gas by induced cur-rent method and quantitaive production of electron transport coefficient is calculated by backward-prolongation of Boltzmann equation. Then electron energy distribution function and attachment coefficients are calculated. This paper can use the electron drift velocity by experimentally and the electron transport coefficient by calculated as a basic data of mixed Gas by comparing and investigating.g.

• Transactions on Electrical and Electronic Materials
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• 제17권2호
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• pp.113-117
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• 2016

Temperature dependent reverse-bias current-voltage (I-V) characteristics in Cu Schottky contacts to oxygen plasma treated n-InP were investigated. For untreated sample, current transport mechanisms at low and high temperatures were explained by thermionic emission (TE) and TE combined with barrier lowering, respectively. For plasma treated sample, experimental I-V data were explained by TE or TE combined with barrier lowering models at low and high temperatures. However, the current transport was explained by a thermionic field emission (TFE) model at intermediate temperatures. From X-ray photoemission spectroscopy (XPS) measurements, phosphorus vacancies (VP) were suggested to be generated after oxygen plasma treatment. V_P possibly involves defects contributing to the current transport at intermediate temperatures. Therefore, minimizing the generation of these defects after oxygen plasma treatment is required to reduce the reverse-bias leakage current.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• 제10권6호
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• pp.552-557
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• 2017

Wire, wireless digital broadcasting has sharply expanded with the birth of high definition TV since 2010, the use of duplex contents as well as simplex contents has rapidly increased. Currently, our satellite communications system adopted DVB by European digital broadcasting standardization organization as a standard of domestic data broadcasting, the method how to use selective contents has been studied variously according to the development of IPTV. Digital broadcasting utilizes the method using Transport Stream Packet(TSP) by the way of multiplexing of information in order to send multimedia information such as video, audio and data of MPEG-2, this streams include detail information on TV guide and program as well as video and audio information. In order to understand these data broadcasting system, this study realized TS analyzer that divides transport stream (TS) by packet in Linux environment, analyzes and prints by function, it can help the understanding of TS, the enhancement of stream parsing ability.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제13권6호
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• pp.2964-2985
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• 2019

Global data center IP traffic is expected to reach 20.6 zettabytes (ZB) by the end of 2021. Intra-data center networks (Intra-DCN) will account for 71.5% of the data center traffic flow and will be the largest portion of the traffic. The understanding of traffic distribution in IntraDCN is still sketchy. It causes significant amount of bandwidth to go unutilized, and creates avoidable choke points. Conventional transport protocols such as Optical Packet Switching (OPS) and Optical Burst Switching (OBS) allow a one-sided view of the traffic flow in the network. This therefore causes disjointed and uncoordinated decision-making at each node. For effective resource planning, there is the need to consider joining the distributed with centralized management which anticipates the system's needs and regulates the entire network. Methods derived from Kalman filters have proved effective in planning road networks. Considering the network available bandwidth as data transport highways, we propose an intelligent enhanced SDN concept applied to OBS architecture. A management plane (MP) is added to conventional control (CP) and data planes (DP). The MP assembles the traffic spatio-temporal parameters from ingress nodes, uses Kalman filtering prediction-based algorithm to estimate traffic demand. Prior to packets arrival at edges nodes, it regularly forwards updates of resources allocation to CPs. Simulations were done on a hybrid scheme (1+1) and on the centralized OBS. The results demonstrated that the proposition decreases the packet loss ratio. It also improves network latency and throughput-up to 84 and 51%, respectively, versus the traditional scheme.

• Transactions on Electrical and Electronic Materials
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• 제14권2호
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• pp.94-100
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• 2013

The elements B, P and As can each be implanted in silicon; for the fabrication of integrated semiconductor devices and the wells in CMOS (complementary metal oxide semiconductor). The implanted range due to different implanted species calculated using TRIM (Transport of Ions in Matter) simulation results was considered. The profiles of implanted samples could be measured using SIMS (secondary ion mass spectrometry). In the comparison between the measured and simulated data, some deviations were shown in the profiles of MeV implanted silicon. The Moliere, C-Kr, and ZBL potentials were used for the range calculations, and the results showed almost no change in the MeV energy region. However, the calculations showed remarkably improved results through the modification of the electronic stopping power. The results also matched very well with SIMS data. The calculated tolerances of $R_p$ and ${\Delta}R_p$ between the modified $S_e$ of TRIM and SIMS data were remarkably better than the tolerances between the TRIM and SIMS data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제17권12호
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• pp.1341-1346
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• 2004

The OLED research is gone for two directions. One is material development research, and another one is structural improvement part. All two are thing to heighten luminescence efficiency of OLED. n other to improve luminescence efficiency of OLED Electron - hole pairs must consist much more in the device Their profiles are sensitive to mobility velocity of electrons and holes. In this paper, we demonstrate the difference of velocity between hole and electron by experiments, and compare with a data of simulation and experiment changing hole carrier transport layer thickness, so we get the optimal we improve luminescence efficiency. We suggest improving the efficiency of OLEDS would be to balance the injection of electrons and holes into light emission layer of the device. And, we improve understanding of the various luminescence efficiency through experiments and numerical analysis of luminescence efficiency in variable hole carrier transport layer's thickness.

• Electrical & Electronic Materials
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• 제8권6호
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• pp.685-692
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• 1995

The electron transport coefficients in argon gas is studied over the range of E/N values from 85 to 566 Td by the Monte Carlo method considering the latest cross section data. The result of the Monte Carlo method analysis shows that the value of the electron transport coefficients such as the electron drift velocity, the ratio of the longitudinal and transverse diffusion coefficients to the mobility. It is also found that the electron transport coefficients calculated by the two-term approximation analysis agree well with those by Monte Carlo calculation. The electron energy distributions function were analysed in argon at E/N=283, and 566 Td for a case of the equilibrium region in the mean electron energy. A momentum transfer cross section for the argon atom which was consistent with both of the present electron transport coefficients was derived over the range of mean electron energy from 10.3 to 14.5 eV, also suggested as a set of electron cross section for argon atom. The validity of the results obtained has been confirmed by a Monte Carlo simulation method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.507-508
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• 2006

$SF_6$ gas is widely used in industrial of insulation field. In this paper, $N_2$ is mixed to improve pure $SF_6$ gas characteristics. Electron transport coefficients in $SF_6-N_2$ mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results have been obtained by using the electron collision cross sections by TOF, PT, SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation. The result of Boltzmann equation and Monte Carlo Simulation has been compared with experimental data by Ohmori, Lucas and Carter. The swarm parameter from the swarm study are expected to sever as a critical test of current theories of low energy scattering by atoms and molecules.