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검색결과 555건 처리시간 0.034초

Control of Deposition Parameters in ITO Films: Figure of Merit

  • Kim, H.H.;Park, C.H.;M.J. Cho;K.J. Lim;J.H. Shin;Park, K.J.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.398-401
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    • 2001
  • Indium tin oxide films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of T/R$\sub$sh/ and T$\^$10//R$\sub$sh/ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and 8.95 (x10$\^$-3/Ω$\^$-1/), respectively.

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액상성장법으로 작성한 $\textrm{Bi}_{2-xL}\textrm{Sr}_{2}\textrm{Ca}_{1+xL}\textrm{Cu}_{2}\textrm{O}_{8+d}$ 막에서 각 원소들의 상호치환상태에 관한 연구 (A Study of the Mutual Substitution State in $\textrm{Bi}_{2-xL}\textrm{Sr}_{2}\textrm{Ca}_{1+xL}\textrm{Cu}_{2}\textrm{O}_{8+d}$ Films Prepared by Liquid Phase Epitaxial Method)

  • 신재수
    • 한국재료학회지
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    • 제9권8호
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    • pp.849-853
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    • 1999
  • 본 연구에서는 액상성장법(LPE법)으로 $Bi_2$-x(sub)$LSr_2$Ca(sub)1+x(sub)$LCu_2$O(sub)8+d (x(sub)L=0, 0.05, 0.1, 0.2) 막(film)을 작성하여 초전도특성을 알아보았고, XPS 측정으로 얻은 Sr3d과 Ca2p의 피크분해 결과와 EPMA 측정 결과를 통하여 각 layer에 있어서 원자들의 분포상태에 관하여 조사하였다. 작성한 막(film)의 c-축의 길이는 x(sub)L(융해조성비)의 증가에 따라 단조로이 증가하였고, 임계온도 T(sub)c는 x(sub)L=0.1 부근에서 최고치를 나타내고 있었다. x(sub)L의 변화에 따른 임계온도 T(sub)c와 c-축의 길이의 변화는 BiO-layer에 있는 과잉산소의 변화에 의한 것이며, SrO-layer에서 원소들의 분포상태와 결손이 초전도특성 및 결정구조에 영향을 미치고 있음을 알 수 있었다.

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$Ar/Cl_{2}/CF_{4}$ 코밀도 플라즈마를 이용한 강유전체 $YMnO_3$의 건식식각 특성연구 (Dry Etch Characteristic of Ferroelectric $YMnO_3$ Thin Films Using High Density $Ar/Cl_{2}/CF_{4}$ $PAr/Cl_{2}/CF_{4}$)

  • 박재화;김창일;장의구;이철인;이병기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.213-216
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    • 2001
  • Etching behaviors of ferroelectric YMn $O_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric YMn $O_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of YMn $O_3$ thin film is 300 $\AA$/min at Ar/C $l_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of 3$0^{\circ}C$. Addition of C $F_4$ gas decrease the etch rate of YMn $O_3$ thin film. From the results of XPS analysis, Y $F_{X}$ compunds were found on the surface of YMn $O_3$ thin film which is etched in Ar/C1/C $F_4$ plasma. The etch profile of YMn $O_3$ film is improved by addition of C $F_4$ gas into the Ar/C $l_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on YMn $O_3$.>.

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열처리조건이 초전도벌크의 임계특성에 미치는 영향 (The effects of heat treatment condition on critical characteristics of HTSC bulk)

  • 임성훈;한태희;박경국;조동언;이중근;한병성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.356-359
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    • 1997
  • The Effects of different melting temperature and holding time in the melting temperature on J$\sub$c/ of YBa$_2$Cu$_3$O$\sub$x/ based superconducting bulk using MPMG process were investigated. the value of critical current density was the largest at l120$^{\circ}C$, the melting temperature which is appointed to the mid point of (Y$_2$BaCuO$\sub$5/ + Liquid)region. With the melting temperature in which the value of J$\sub$c/ is the largest, J$\sub$c/ was again measured to see whether the holding time at this proper melting temperature has the effect on the critical characteristics. From the result above it was concluded that the melting temperature and holding time were important to improve the J$\sub$c/ and the formation of the Y$_2$BaCuO$\sub$5/. In this paper, the melting temperature obtained was l120$^{\circ}C$ and propel holding time could be obtained as 20 minute and the more holding time was not effective in the J$\sub$c/ improvement as well as the formation of Y$_2$BaCuO$\sub$5/.

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Application of a C-Type Filter Based LCFL Output Filter to Shunt Active Power Filters

  • Liu, Cong;Dai, Ke;Duan, Kewei;Kang, Yong
    • Journal of Power Electronics
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    • 제13권6호
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    • pp.1058-1069
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    • 2013
  • This paper proposes and designs a new output filter called an LCFL filter for application to three phase three wire shunt active power filters (SAPF). This LCFL filter is derived from a traditional LCL filter by replacing its capacitor with a C-type filter, and then constructing an L-C-type Filter-L (LCFL) topology. The LCFL filter can provide better switching ripple attenuation capability than traditional passive damped LCL filters. The LC branch series resonant frequency of the LCFL filter is set at the switching frequency, which can bypass most of the switching harmonic current generated by a SAPF converter. As a result, the power losses in the damping resistor of the LCFL filter can be reduced when compared to traditional passive damped LCL filters. The principle and parameter design of the LCFL filter are presented in this paper, as well as a comparison to traditional passive damped LCL filters. Simulation and experimental results are presented to validate the theoretical analyses and effectiveness of the LCFL filter.

반응표면분석법에 의한 적층 칩 바리스터의 전기적 특성 (Electrical Properties of Multilayer Chip Varistors in the Response Surface Analysis)

  • 윤중락;정태석;최근묵;이석원
    • 한국전기전자재료학회논문지
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    • 제20권6호
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    • pp.496-501
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    • 2007
  • In order to enhance sintering characteristics on the $ZnO-Pr_6O_{11}$ based multilayer chip varistors (MLVs), a response surface analysis using central composite design method were carried out. As a result, varistor voltage($V_{1mA}$), nonlinear coefficient ($\alpha$), leakage current ($I_L$) and capacitance (C) were considered to be mainly affected by sintered temperature and holding time. MLVs sintered at $1200^{\circ}C$ and above $1200^{\circ}C$ revealed poor electrical characteristics, possibly due to the reaction between electrode materials(Pd) and $ZnO-Pr_6O_{11}$ based ceramics. On the sintering temperature range $1150{\sim}1175^{\circ}C$, nonlinear coefficient ($\alpha$) and leakage current ($I_L$) were shown to be $60{\sim}69$ and below $0.3{\mu}A$, respectively. In particular, MLVs sintered at $1175^{\circ}C$, 1.5 hr and $2^{\circ}C/hr$ (cooling speed) showed stable ESD(Electrical Static Discharge) characteristics under the condition of 10 times at 8 Kv with deviation varistor voltage, and deviation nonlinear coefficient were 0.3% and 0.33% (at positive), 0.55% (at negative), respectively.

공간회로망법을 이용한 GIS내의 움직이는 도체이물질에 대한 전자계 해석 (Analysis of Electromagnetic Field by moving metal particle in GIS using SNM)

  • 임영환;박경수;최영환;최성열;고영호
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 하계학술대회 논문집 C
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    • pp.1670-1672
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    • 2001
  • In compared with air insulated switchgear GIS has a high efficiency and confidence. Insulation method using $SF_6$ gas has a very excellent insulation characteristics for high voltage equipment but has a characteristics that insulation heredity is changed for internal unequal electric field. So analysis of electromagnetic field in GIS is very important basic data for structure design and trouble diagnosis process. In compared with established method, SNM in this paper observes variation of the electromagnetic field with real time and get result very similar to measurement. In order to know the variation of electromagnetic field distribution for transient response for time and position, variations are observed when metal particles are moving fast.

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파장분할다중 방식 광전송망을 위한 초광대역 광증폭기 (Ultra-broadband Optical Amplifier for WDM Optical Transmission Networks)

  • 이영선;정재진
    • 한국전자통신학회논문지
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    • 제3권4호
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    • pp.289-294
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    • 2008
  • 인터넷 이용자가 급속히 증가함에 따라 네트워크의 각 노드에서 감당해야 할 트래픽 용량이 수십 테라급에 이를 것으로 예상하고 있다. 한 개의 광섬유를 통해 테라비트 이상의 전송을 위해서는 기존의 시분할다중 방식 외에 파장분할다중 방식을 사용해야 한다. 파장분할다중 방식의 전송 용량을 확대하기 위해서는 채널당 전송 속도 또는 채널의 수를 증가시켜야 한다. 채널의 수를 증가시키기 위해서는 채널 간격을 줄이는 방안과 전송 대역폭을 넓히는 방안이 있다. 전송 대역폭을 넓히기 위해서는 초광대역 광증폭 기술이 필요하다. 본 논문에서는 C/L band에서 사용되는 에르븀 첨가 광섬유 증폭기, 광섬유 라만 증폭기 및 S band 광증폭기들을 소개하고, 다양한 광신호 증폭기술에 대한 발전 동향을 분석하고자 한다.

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