• 전자공학회논문지A
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• 제33A권7호
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• pp.198-204
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• 1996

Electron beam lithography is one of the importnat technologies which can delineate deep submicron patterns. REcently, electron beam lithography is being applied in delineating the critical layers of semiconductor device fabrication. In this paper, we present a development simulation program for electron beam lithography and study the development profiles of resist when resist is exposed by the electron beam. Experimentally, the development parameter of positive and negative resists are measured and the data is applied to input parameter of the simulation program. Also simulation results are compared of the process results in the view of resist profiles. As a result, for PMMA and SAL 601 resist, the trend of simulation to the values of process parameters agree with real process results very well, so that the process results can be predicted by the simulation.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1727-1732
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• 2008

We present a facile, yet versatile carbon nanofabrication method using electron beam lithography and resist pyrolysis. Various resist nanopatterns were fabricated using a negative electron beam resist, SAL-601, and were then subjected to heat treatment in an inert atmosphere to obtain carbon nanopatterns. Suspended carbon nanostructures were fabricated by wet-etching of an underlying sacrificial oxide layer. Free-standing carbon nanostructures, which contain 122 nm-wide, 15 nm-thick, and 2 ${\mu}m$-long nanobridges, were fabricated by resist pyrolysis and nanomachining processes. Electron beam exposure dose effects on resist thickness and pattern widening were studied. The thickness of the carbon nanostructures was thinned down by etching with oxygen plasma. An electrical biosensor utilizing carbon nanostructures as a conducting channel was studied. Conductance modulations of the carbon device due to streptavidin-biotin binding and pH variations were observed.

• ETRI Journal
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• 제29권6호
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• pp.814-816
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• 2007

Conventional lithography methods of gold patterning are based on deposition and lift-off or deposition and etching. In this letter, we demonstrate a novel method of gold patterning using spin-coatable gold electron-beam resist which is functionalized gold nanocrystals with amine ligands. Amine-stabilized gold electron beam resist exhibits good sensitivity, 3.0 mC/$cm^2$, compared to that of thiol-stabilized gold electron beam resists. The proposed method reduces the number of processing steps and provides greater freedom in the patterning of complex nanostructures.

• 한국산학기술학회논문지
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• 제8권4호
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• pp.743-747
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• 2007

반도체 소자 제작에 있어서 회로의 pattern 형성에 이용하는 차세대 lithography 공정 기술을 위해서 전자빔 lithography 공정 기술 연구가 진행되고 있다. 본 연구에서는 Gauss 해석법과 Monte Carlo의 수치해석법을 사용하여 두께 100 nm의 PMMA (poly-methyl-methacrylate) resist에 전자 $1{\times}10^4$를 입사시키고, 입사 전자빔 에너지에 따른 PMMA 내에서의 투과 깊이를 비교하였다. 전자빔 에너지의 크기는 100eV, 300eV, 500eV, 700eV, 그리고 1000eV에 대하여 simulation을 실시하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.278-280
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• 1994

The purpose of this paper is to describe an application of plasma polymerized thin film as an electron beam resist. Plasma polymerized thin film was prepared using an interelectrod inductively coupled gas-flow-type reactor. Styrene was chosen as the monomer to be used. This thin films were also delineated by the electron-beam apparatus and the pattern in the resist was developed with RIE and plasma polymerized apparatus. The effect of charge of pressure on growth rate and etching rate of the thin films were studied. The molecular structure of thin film was investigated by FT-IR and then was discussed in relation to its quality as a resist.

• E2M - 전기 전자와 첨단 소재
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• 제7권5호
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• pp.425-429
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• 1994

In this paper, we study on the plasma polymerized styrene as a negative electron-beam resist. Plasma polymerized thin film was prepared using an interelectrode inductively coupled gas-flow type reactor. We show that polymerization parameters of thin film affect sensitivity and etching resistance of the resist. Molecular weight distribution of plasma polymerized styrene is 1.41-3.93, and deposition rates of that are 32-383[.angs./min] with discharge power. Swelling and etching resistance becomes . more improved with increasing discharge power during plasma polymerization. Etch rate by RIE is higher than that by plasma etching.

• 전자공학회논문지A
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• 제33A권6호
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• pp.144-150
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• 1996

The purpose of this paper is to develop a simulation program to predict resist prifile in electron-beam lithography, where the main issue is proximity effect. The simualtion program composes of monte-carlo simulation, exposure simulation and development simulation. In nonte-carlo simulation, the absorbed energy in the resist is calculated when one electron is incident into resist, using hybrid model on the basis of the rutherford differential scattering cross section and moller theory. In exposure simulation, the absorbed energy in the resist is calculated when electrons are incident in exposure pattern. In the program, the developed profile depending on time is obtained by string model. The 0.2$\mu$m and the 0.3$\mu$m line and space patterns are experimentally delineated and compared to the simulation results to check the relevance of the program.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.152-155
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• 1994

The purpose of this paper is to develope an electron beam resist by the plasma polymerization. Plasma co-polymerized resist was prepared using an interelectrode gas-flow-type reactor. And then delineated pattern in the resist was developed with gas flow type reactor using Ar and O$_2$ gas as etching gas. We study about the effects of discharge power and mixing rate of the copolymerized thin film. The characteristics of molecular structure of thin film was investigated by FT-lR, DSC and GPC, and then was discussed in relation to its quality as a resist.

• Advances in nano research
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• 제1권2호
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• pp.105-109
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• 2013

We report dry thermal development of negative resist polystyrene with low molecular weight. When developed on a hotplate at $350^{\circ}C$ for 30 min, polystyrene showed reasonable high contrast and resolution (30 nm half-pitch), but low sensitivity. Resist sensitivity was greatly improved at lower development temperatures, though at the cost of reduced contrast. In addition, we observed the thickness reduction due to thermal development was higher for larger remaining film thickness, implying the thermal development process is not just a surface process and the more volatile chains below the top surface may diffuse to the surface and get evaporated.

• 대한전자공학회논문지SD
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• 제41권5호
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• pp.23-36
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• 2004

밀리미터파 대역용 고속 HEMT 소자 제작 및 개발을 위하여 0.l㎛ 이하의 T-게이트 길이를 형성하기 위한 전자빔 리소그래피 공정을 분석할 수 있는 새로운 몬테 카를로 시뮬레이터를 개발하였다. 전자빔에 의한 노광 공정 모델링을 위해 전자산란에 대한 몬데 카를로 시뮬레이션에서 다층 리지스트 및 다원자 타겟 기판 구조에서 리지스트에 전이되는 에너지를 효율적으로 계산하도록 내부 쉘 전자 산란과 에너지 손실에 대해 새로이 모델링하였다. 다층 리지스트 구조에서 T-게이트 형상을 얻기 위해서 보통은 재현성 문제로 각 리지스트에 대해 각기 다른 현상액을 사용하게 되는데, 3층 리지스트 구조에서의 전자빔 리소그래피 공정을 정확하게 시뮬레이션하기 위해 각기 다른 현상 모델을 적용하였다. 본 논문에서 제안 개발된 모델을 사용하여 HEMT 소자의 전자빔 리소그래피에 의한 0.l㎛ T-게이트 형성 공정을 시뮬레이션하고 SEM 측정 결과와 비교하여 T-게이트 형성 공정을 분석하였다.