• 제목/요약/키워드: Electron-beam Evaporation

검색결과 218건 처리시간 0.029초

E-Beam 증착기법에 의해 성장된 $CdS_{1-x}Se_x$ 발광소자의 특성연구 (A Study on the Characteristics of $CdS_{1-x}Se_x$ Luminescent Devices grown by Electron Beam Evaporation Technique)

  • 양동익;박성문;라경숙;최용대
    • 한국진공학회지
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    • 제3권1호
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    • pp.111-116
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    • 1994
  • 본 연구는 CdS, CdSe 분말을 불순물, flux와 혼합하여 질소 분위기에서 소결한 후 전자빔으로 증착하여 적절한 조건에서 열처리 하였다, 이 박막의 결정구조를 X-ray 회절 실험을 통하여 조사하고 제작된 CdS1-xSex 발광 소자의 전기적 특성은 Hall 효과 측정을 이용하고 광학적특성은 광발광 및 광전 류 스펙트럼, 감도, 최대 허용소비전력, 응답시간 등을 분서하교, 발광소자로서의 기능을 검토하였다.

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Characterization of $ZrO_2$ thin films fabricated by glancing angle deposition

  • Sobahan, K.M.A;Park, Yong-Jun;HwangBo, Chang-Kwon
    • 한국광학회:학술대회논문집
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    • 한국광학회 2008년도 동계학술발표회 논문집
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    • pp.281-282
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    • 2008
  • The glancing angle deposition (GLAD) technique was used to fabricate $ZrO_2$ thin films by electron-beam evaporation. The crystal structure, cross-sectional structure, surface morphology and optical properties are characterized by X-ray diffraction meter (XRD, Rigaku, Cu $K{\alpha}$ - radiation), scanning electron microscope (SEM), and spectrophotometer, respectively.

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Y$Ba_2$$Cu_3$$O_{7-x}$ 후막의 고속 증착과 임계 전류 밀도의 두께 의존성 (High-rate growth $YBa_2$$Cu_3$$O_{7-x}$ thick films and thickness dependence of critical current density)

  • 조월렴
    • Progress in Superconductivity
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    • 제6권1호
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    • pp.13-18
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    • 2004
  • High-.ate in-situ$ YBa_2$Cu$Cu_3$$O_{7-x}$ (YBCO) film growth was demonstrated by means of the electron beam co-evaporation. Even though our oxygen pressure is low, ∼$5 ${\times}$10^{-5}$ Torr, we can synthesize as-grown superconducting YBCO films at a deposition rate of around 10 nm/s. Relatively high temperatures of around 90$0^{\circ}C$ was necessary in this process so far, and it suggests that this temperature at a given oxygen activity allows a Ba-Cu-O liquid formation along with an YBCO epitaxy. Local critical current density shows a clear correlation with local resistivity. Homogeneous transport properties with a large critical current density ($4 ∼ 5 MA/\textrm{cm}^2$ at 77K, 0T) are observed in top faulted region while it is found that the bottom part carries little supercurrent with a large local resistivity. Therefore, it is possible that thickness dependence of critical current density is closely related with a topological variation of good superconducting paths and/or grains in the film bodies. The information derived from it may be useful in the characterization and optimization of superconducting films for electrical power and other applications.

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전자빔 증발법에 의한 박막형 고온초전도체의 $CeO_2$ 버퍼층 증착 연구 (Research for Deposition of $CeO_2$ Buffer Layer on Coated Conductor by Electron Beam Evaporation)

  • 이종범;박신근;김혜진;문승현;이희균;홍계원
    • Progress in Superconductivity
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    • 제11권2호
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    • pp.123-127
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    • 2010
  • The properties of buffer layer for thermal and chemical stability in coated conductor is a very important issue. $CeO_2$ has desirable thermal and chemical stability as well as good lattice match. In this study, $CeO_2$ was deposited by electron beam deposition. The MgO(001) single crystal and LMO buffered IBAD substrate(LMO/IBAD-MgO/$Y_2O_3/Al_2O_3$/Hastelloy) were used as substrates, which have $\Delta\phi$ values of ${\sim}8.9^{\circ}$. The epitaxial $CeO_2$ films was deposited with high deposition rate of $12{\sim}16\;{\AA}/sec$. During deposition, the change of oxygen partial pressure(${\rho}O_2$) does not cause change in c-axis texture. In case of $CeO_2$ on MgO single crystal, the substrate temperature was optimized at $750^{\circ}C$ with superior $\Delta\phi$ and $\Delta\omega$ value. Otherwise, In case of LMO buffered IBAD substrate, It was optimized at $650^{\circ}C$ with increasing its deposition thickness of $CeO_2$, which was finally obtained with best $\Delta\phi$ value of $5.5^{\circ}$, $\Delta\omega$ value of $2^{\circ}$ and Ra value of 2.2 nm.