• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.1
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• pp.20-26
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• 2001

Titanium boride ($\textrn{TiB}_{x}$) films were deposited on (100) silicon substrates at the substrate temperature of $500^{\circ}C$ by means of the co-evaporation of titanium and boron evaporants during deposition. The co-evaporation method makes it possible to deposit the non-stoichiometric films with different boron-to-titanium ratio($0{\le}B/Ti \le 2.5$). The resistivity increases linearly as the boron-to-titanium ratio in the as-deposited films is increased. The surface roughness of $\textrn{TiB}_{x}$ films is changed as a function of the boron-to-titanium ratio. The XRD spectrum for pure titanium film shows a highly (002) preferred orientation. For B/Ti=0.59 ratio only a single TiB phase that shows a (111) preferred orientation is observed. However, the $\textrn{TiB}_{x}$ phase with the hexagonal structure of the $AlB_2$(C32) type appears as the boron concentration increase, and only a single $\textrn{TiB}_{x}$ phase is observed for $B/Ti \ge 2.0$ ratio. The $\textrn{TiB}_{x}$/Si samples reveal a tensile stress (3~$20{\times}^9$dyn/$\textrm{cm}^2$) in the overall composition of the films, although the magnitude of the residual stresses is depended on the nominal B/Ti ratio.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.43-49
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• 1992

RHEED apparatus which is one of the systems of surface structure analysis has been constructed.Electron beam is focused by means of magnetic lens, and the beam divergence is about $1{\times}10^{-3}$ rad. The Acceleration voltage of this RHEED apparatus is continuously variable from 0 to 20 kV. K and Cs-adsorbed structureson Si(111)$7{\times}7$ surface at room and high temperatures($200{\times}700^{\circ}C$) have been investigated by RHEED. It is observed that the K and Cs-adsorbed Si(111)surface structures at saturation coverage are Si(111)$7{\tiems}7-K$ and Si(111)$1{\tiems}1-Cs$ at room temperature, respectively. When the specimen temperature was elevated during evaporation,the $3{\times}1$ structure appears in the range of temperature between $300^{\circ}C$ and $550^{\circ}C$, and the $1{\tiems}1$ structure appears above $550^{\circ}C$ in K/Si(111)system. Also, in Cs/Si(111) system the $\sqrt{3}{\times}\sqrt{3}$ structure appears at $300^{\circ}C$, and the $\sqrt{3}{\times}\sqrt{3}+3{\times}1$ structure appears between $350^{\circ}C$ and $400^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.347-347
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• 2012

Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.290-294
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• 2000

ZnS:Mn TFEL devices were fabricated by electron-beam evaporation method and then the electro-optical properties were investigated. To investigate the capacitance which was due to oxygen vacancy at the $Ta_2O_5$ thin film, AES(Auger Electron Spectroscopy) and C-F(capacitance-frequency) measurements were used. It was found that the capacitance was decreased by annealing the $Ta_2O_5$ film in oxygen ambience. From EL emission measurement, we observed the EL emission spectrum which had the peak range from 550nm and 650nm. This emission is associated with the transition from $^4T_1(^4G)$ first excited state to $^6A_1(^6S)$ ground state in the $3d^5$ energy level configuration of $Mn^{2+}$ occurs. The threshold voltage of EL device with $Ta_2O_5$ insulator layer was found to be 24V~28V. The CIE color coordinates of these emission are X=0.5151, Y=0.4202 which is yellowish orange emitting. The EL device using $Ta_2O_5$ insulator layer can be driven with a low voltage which is beneficial to the practical application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.655-659
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• 2010

Nanoporous titanium dioxide ($TiO_2$) is very attractive material for various applications due to the high surface to volume ratio. In this study, we have fabricated nanoporous $TiO_2$ thin films on Si by anodic oxidation. 500-nm-thick titanium (Ti) films were deposited on Si by using electron beam evaporation. Nanoporous structures in the Ti films were obtained by anodic oxidization using ethylene glycol electrolytes containing 0.3 wt% $NH_4F$ and 2 vol% $H_2O$ under an applied bias of 5 V. The diameter of nanopores in the Ti films linearly increased with anodization time and the whole Ti layer could become nanoporous after anodizing for 3 hours, resulting in vertically aligned nanotubes with the length of 200~300 nm and the diameter of 50~80 nm. Upon annealing at $600^{\circ}C$ in air, the anodized Ti films were fully crystallized to $TiO_2$ of rutile and anatase phases. We believe that our method to fabricate nanoporous $TiO_2$ films on Si is promising for applications to thin-film gas sensors and thin-film photovoltaics.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.310-313
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• 2000

In this study, the Au/Ni and Au/Ni/Si/Ni layers prepared by electron beam evaporation were used to form ohmic contacts on p-type GaN. Before rapid thermal annealing, the current-voltage(I-V) characteristic of Au/Ni and Au/Ni/Si/Ni contact on p-type GaN film shows non-ohmic behavior. A Specific contact resistance as 3.4$\times$10$^{-4}$ Ω-$\textrm{cm}^2$ was obtained after 45$0^{\circ}C$-RTA. The Schottky barrier height reduction may be attributed to the presence of Ga-Ni and Ga-Au compounds, such as Ga$_4$Ni$_3$, Ga$_4$Ni$_3$, and GaAu$_2$ at the metal - semiconductor interface. The mixing behaviors of both Ni and Au have been studied by using X-ray photoelectron spectroscopy. In addition, X-ray diffraction measurements indicate that the Ni$_3$N, NiGa$_4$, Ni$_2$Si, and Ni$_3$Si$_2$ Compounds were formed at the metal-semiconductor interface.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.181.1-181.1
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• 2015

용액 공정을 이용한 Resistive random access memory (ReRAM)은 간단한 공정 과정, 대면적화, 저렴한 가격 등의 장점으로 인해 큰 관심을 받고 있으며, HfOx, TiOx, AlOx 등의 산화물이 ReRAM 절연 막으로 주로 연구되고 있다. 더 나아가 최근에는 organic 물질을 메모리 소자로 사용한 연구가 보고되고 있다. 이는 경제적이며, wearable 또는 flexible system에 적용이 용이하다. 그럼에도 불구하고, organic 물질을 갖는 메모리 소자는 기존의 산화물 소자에 비해 열에 취약하며 전기적인 특성과 신뢰성이 우수하지 못하다는 단점을 가지고 있다. 이를 위한 방안으로 본 연구에서는 AlOx - polymethylmethacrylate (PMMA) blended thin film ReRAM을 제안하였다. 이는 organic물질의 전기적 특성을 개선시킬 뿐 아니라, inorganic 물질을 wearable 소자에 적용했을 때 발생하는 crack과 같은 기계적 물리적 결함을 해결할 수 있는 새로운 방법이다. 먼저, P-type Si 위에 습식산화를 통하여 SiO2 300 nm 성장시킨 기판을 사용하여 electron beam evaporation으로 10 nm의 Ti, 100 nm의 Pt 층을 차례로 증착하였다. 그리고 PMMA 용액과 AlOx 용액을 초음파를 이용하여 혼합한 뒤, 이 용액을 Pt 하부 전극 상에서 spin coating방법으로 1000 rpm 10초, 5000 rpm 30초의 조건으로 증착하였다. Solvent 및 불순물 제거를 위하여 150, 180, $210^{\circ}C$의 온도로 30 분 동안 열처리를 진행하였고, shadow mask를 이용하여 상부 전극인 Ti를 sputtering 방식으로 100 nm 증착하였다. 150, 180, $210^{\circ}C$로 각각 열처리한 AlOx - PMMA blended ReRAM의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과 제작된 소자 전부에서 2 V이하의 낮은 동작전압, 안정된 DC endurance (>150cycles), 102 이상의 높은 on/off ratio를 확인하였고, 그 중 $180^{\circ}C$에서 열처리한 ReRAM은 더 높은 on/off ratio를 갖는 것을 확인하였다. 결론적으로 baking 온도를 최적화하였으며 AlOx - PMMA blended film ReRAM의 우수한 메모리 특성을 확인하였다. AlOx-PMMA blended film ReRAM은 organic과 inorganic의 장점을 갖는 wearable 및 system용 비휘발성 메모리소자에 적용이 가능한 경제적인 기술로 판단된다.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.133-134
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• 2009

Cold temperature development (CTD) of electron beam (EB) patterned resists and subsequent dry etching were investigated for fabrication of nano-patterned Niobium (Nb). Bulky Nb fims on GaAs substrates were deposited with EB evaporation. Line patterns on Nb cathode were fabricated by EB patterning and reactive ion etching (RIE). Size deviations of nano-sized line patterns from CAD designed patterns are dependent on the EB total exposure, but it can be improved by CTD of EB-exposed resist. Line patterns of 10 to 300 nm widths of EB-exposed resist patterns were drawn under various exposure conditions of $0.2{\mu}s$/dot (total 240,000 dot) with a constant current (50 pA). Compared with room temperature development (RTD), the CTD improves pattern resolution due to the suppression of backscattering effect. RIE with $CF_4$ was performed for formation of several nano-sized line patterns on Nb. Each EB-resist patterned samples with RTDs and CTDs were etched with two different $CF_4$ gas pressures of 5 Pa. Nb etching rate increases while GaAs (or ZEP) etching rate decreases as the chamber pressure increases. This different dependent of the etching rate on the $CF_4$ pressure between Nb and GaAs (or ZEP) has a significant meaning because selective etching of nano-sized Nb line patterns is possible without etching of the underlying active layer.

• Journal of the Korean Ceramic Society
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• v.45 no.8
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• pp.472-476
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• 2008

The surface region of commercial stainless steel 304 and 316 plates has been modified through deposition of the multi-layered coatings composed of titanium film ($0.1{\mu}m$) and gold film ($1-2{\mu}m$) by an electron beam evaporation method. XRD patterns of the stainless steel plates deposited with conductive metal films showed the peaks of the external gold film and the stainless steel substrate. Surface microstructural morphologies of the stainless steel bipolar plates modified with multi-layered coatings were observed by AFM and FE-SEM images. The stainless steel plates modified with $0.1{\mu}m$ titanium film and $1{\mu}m$ gold film showed microstructure of grains of under 100 nm diameter. The external surface of the stainless steel plates deposited with $0.1{\mu}m$ titanium film and $2{\mu}m$ gold film represented somewhat grain growth of Au grains in FE-SEM image. The electrical resistance and water contact angle of the stainless steel bipolar plates modified with multi-layered coatings were examined with the thickness of the gold film.

• Progress in Superconductivity and Cryogenics
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• v.13 no.1
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• pp.1-5
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• 2011

[ $CeO_2$ ]has been widely used for single buffer layer of coated conductor because of superior chemical and structural compatibility with $ReBa_2Cu_3O_{7-{\delta}}$(Re=Y, Nd, Sm, Gd, Dy, Ho, etc.). But, the surface of $CeO_2$ layer showed cracks because of the large difference in thermal expansion coefficient between metal substrate and deposited $CeO_2$ layer, when thickness of $CeO_2$ layer exceeds 100 nm on the biaxially textured Ni-3%W substrate. The deposition rate has been limited to be less than 6 $\AA$/sec in order to get a good epitaxy. In this research, we deposited $CeO_2$ single buffer layers on biaxially textured Ni-3%W substrate with 2-step process such as thin nucleation layer(>10 nm) with low deposition rate(3 $\AA$/sec) and thick homo epitaxial layer(>240 nm) with high deposition rate(30 $\AA$/sec). Effect of deposition temperature on degree of texture development was tested. Thick homo epitaxial $CeO_2$ layer with good texture without crack was obtained at $600^{\circ}C$, which has ${\Delta}{\phi}$ value of $6.2^{\circ}$, ${\Delta}{\omega}$ value of $4.3^{\circ}$ and average surface roughness(Ra) of 7.2 nm within $10{\mu}m{\times}10{\mu}m$ area. This result shows the possibility of preparing advanced Ni substrate with simplified architecture of single $CeO_2$ layer for low cost coated conductor.