• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.77-77
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• 2017

Titanium and its alloys offer attractive properties in a variety of applications. These are widely used for the field of biomedical implants because of its good biocompatibility and high corrosion resistance. Titanium anodizing is often used in the metal finishing of products, especially those can be used in the medical devices with dense oxide surface. Based on SAE/AMS (Society of Automotive Engineers/Aerospace Material Specification) 2488D, it has the specification for industrial titanium anodizing that have three different types of titanium anodization as following: Type I is used as a coating for elevated temperature forming; Type II is used as an anti-galling coating without additional lubrication or as a pre-treatment for improving adherence of film lubricants; Type III is used as a treatment to produce a spectrum of surface colours on titanium. In this study, we have focused on Type II anodization for the medical (dental and orthopedic) application, the anodized surface was modified with gray color under alkaline electrolyte. The surface characteristics were analyzed with Focused Ion Beam (FIB), Scanning Electron Microscopy (SEM), surface roughness, Vickers hardness, three point bending test, biocompatibility, and corrosion (potentiodynamic) test. The Ti-6Al-4V alloy was used for specimen, the anodizing procedure was conducted in alkaline solution (NaOH based, pH>13). Applied voltage was range between 20 V to 40 V until the ampere to be zero. As results, the surface characteristics of anodic oxide layer were analyzed with SEM, the dissecting layer was fabricated with FIB method prior to analyze surface. The surface roughness was measured by arithmetic mean deviation of the roughness profile (Ra). The Vickers hardness was obtained with Vickers hardness tester, indentation was repeated for 5 times on each sample, and the three point bending property was verified by yield load values. In order to determine the corrosion resistance for the corrosion rate, the potentiodynamic test was performed for each specimen. The biological safety assessment was analyzed by cytotoxic and pyrogen test. Through FIB feature of anodic surfaces, the thickness of oxide layer was 1.1 um. The surface roughness, Vickers hardness, bending yield, and corrosion resistance of the anodized specimen were shown higher value than those of non-treated specimen. Also we could verify that there was no significant issues from cytotoxicity and pyrogen test.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.3
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• pp.578-584
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• 2017

$SiO_2$ buffer layer (100 nm) has been deposited on PET substrate by electron beam evaporation. And then, IZTO (In-Zn-Sn-O) thin film has been deposited on $SiO_2$/PET substrate with different RF power of 30 to 60 W, working pressure, 1 to 7 mTorr, by RF magnetron sputtering. Structural, electrical and optical properties of IZTO thin film have been analyzed with various RF powers and working pressures. IZTO thin film deposited on the process condition of 50 W and 3 mTorr exhibited the best characteristics, where figure of merit was $4.53{\times}10^{-3}{\Omega}^{-1}$, resistivity, $4.42{\times}10^{-4}{\Omega}-cm$, sheet resistance, $27.63{\Omega}/sq.$, average transmittance (400-800 nm), 81.24%. As a result of AFM, all the IZTO thin film has no defects such as pinhole and crack, and RMS surface roughness was 1.147 nm. Due to these characteristics, IZTO thin film deposited on $SiO_2$/PET structure was found to be a very compatible material that can be applied to the next generation flexible display device.

• Radiation Oncology Journal
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• v.9 no.1
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• pp.123-130
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• 1991

A docking intraoperative electron beam applicator system, which is easily docking in the collimator for a linear accelerator after setting a sterilized transparent cone on the tumor bearing area in the operation room, has been designed to optimize dose distribution and to improve the efficiency of radiation treatment method with linear accelerator. This applicator system consisted of collimator holder with shielded metals and docking cone with transparent acrylic cylinder, A number of technical innovations have been used in the design of this system, this dooking cone gives a improving latral dose coverage at therapeutic volume. The position of $90\%$ isodose curve under suface of 8 cm diameter cone was extended $4\sim7$ mm at 12 MeV electron and the isodose measurements beneath the cone wall showed hot spots as great as $106\%$ for acrylic cone. The leakage radiation dose to tissues outside the cone wall was reduced as $3\sim5\%$ of output dose. A comprehensive set of dosimetric characteristics of the intraoperative radiation therapy applicator system is presented.

• Journal of the Korean Society of Radiology
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• v.14 no.5
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• pp.563-575
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• 2020

The purpose of this study is to evaluate the activation characteristics that occur in a linear accelerator for container security inspection. In the computer simulation design, first, the targets consisted of a tungsten (Z=74) single material target and a tungsten (Z=74) and copper (Z=29) composite target. Second, the fan beam collimator was composed of a single material of lead (Z=82) and a composite material of tungsten (Z-74) and lead (Z=82) depending on the material. Final, the concrete in the room where the linear accelerator was located contained magnetite type and impurities. In the research method, first, the optical neutron flux was calculated using the MCNP6 code as a F4 Tally for the linear accelerator and structure. Second, the photoneutron flux calculated from the MCNP6 code was applied to FISPACT-II to evaluate the activation product. Final, the decommissioning evaluation was conducted through the specific activity of the activation product. As a result, first, it was the most common in photoneutron targets, followed by a collimator and a concrete 10 cm deep. Second, activation products were produced as by-products of W-181 in tungsten targets and collimator, and Co-60, Ni-63, Cs-134, Eu-152, Eu-154 nuclides in impurity-containing concrete. Final, it was found that the tungsten target satisfies the permissible concentration for self-disposal after 90 days upon decommissioning. These results could be confirmed that the photoneutron yield and degree of activation at 9 MeV energy were insignificant. However, it is thought that W-181 generated from the tungsten target and collimator of the linear accelerator may affect the exposure when disassembled for repair. Therefore, this study presents basic data on the management of activated parts of a linear accelerator for container security inspection. In addition, When decommissioning the linear accelerator for container security inspection, it is expected that it can be used to prove the standard that permissible concentration of self-disposal.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.222-222
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• 2012

Metal oxide gas sensors based on semiconductor type have attracted a great deal of attention due to their low cost, flexible production and simple usability. However, most works have been focused on n-type oxides, while the characteristics of p-type oxide gas sensors have been barely studied. An investigation on p-type oxides is very important in that the use of them makes possible the novel sensors such as p-n diode and tandem devices. Monoclinic cupric oxide (CuO) is p-type semiconductor with narrow band gap (~1.2 eV). This is composed of abundant, nontoxic elements on earth, and thus low-cost, environment-friendly devices can be realized. However, gas sensing properties of neat CuO were rarely explored and the mechanism still remains unclear. In this work, the neat CuO layers with highly ordered mesoporous structures were prepared by a template-free, one-pot solution-based method using novel ink solutions, formulated with copper formate tetrahydrate, hexylamine and ethyl cellulose. The shear viscosity of the formulated solutions was 5.79 Pa s at a shear rate of 1 s-1. The solutions were coated on SiO2/Si substrates by spin-coating (ink) and calcined for 1 h at the temperature of $200{\sim}600^{\circ}C$ in air. The surface and cross-sectional morphologies of the formed CuO layers were observed by a focused ion beam scanning electron microscopy (FIB-SEM) and porosity was determined by image analysis using simple computer-programming. XRD analysis showed phase evolutions of the layers, depending on the calcination temperature, and thermal decompositions of the neat precursor and the formulated ink were investigated by TGA and DSC. As a result, the formation of the porous structures was attributed to the vaporization of ethyl cellulose contained in the solutions. Mesoporous CuO, formed with the ink solution, consisted of grains and pores with nano-meter size. All of them were strongly dependent on calcination temperature. Sensing properties toward H2 and C2H5OH gases were examined as a function of operating temperature. High and fast responses toward H2 and C2H5OH gases were discussed in terms of crystallinity, nonstoichiometry and morphological factors such as porosity, grain size and surface-to-volume ratio. To our knowledge, the responses toward H2 and C2H5OH gases of these CuO gas sensors are comparable to previously reported values.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.39-46
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• 2003

Sn-Cu eutectic solder bump was fabricated by electroplating for flip chip and its characteristics were studied. A Si-wafer was used as a substrate and the UBM(Under Bump Metallization) of Al(400 nm)/Cu(300 nm)/Ni(400 nm)/Au(20 nm) was coated sequentially from the substrate to the top by an electron beam evaporator. The experimental results showed that the plating ratio of the Sn-Cu increased from 0.25 to 2.7 $\mu\textrm{m}$/min with the current density of 1 to 8 A/d$\m^2$. In this range of current density the plated Sn-Cu maintains its composition nearly constant level as Sn-0.9∼1.4 wt%/Cu. The solder bump of typical mushroom shape with its stem diameter of 120 $\mu\textrm{m}$ was formed through plating at 5 A/d$\m^2$ for 2 hrs. The mushroom bump changed its shape to the spherical type of 140 $\mu\textrm{m}$ diameter by air reflow at $260^{\circ}C$. The homogeneity of chemical composition for the solder bump was examined, and Sn content in the mushroom bump appears to be uneven. However, the Sn distributed more uniformly through an air reflow.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.1
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• pp.20-26
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• 2001

Titanium boride ($\textrn{TiB}_{x}$) films were deposited on (100) silicon substrates at the substrate temperature of $500^{\circ}C$ by means of the co-evaporation of titanium and boron evaporants during deposition. The co-evaporation method makes it possible to deposit the non-stoichiometric films with different boron-to-titanium ratio($0{\le}B/Ti \le 2.5$). The resistivity increases linearly as the boron-to-titanium ratio in the as-deposited films is increased. The surface roughness of $\textrn{TiB}_{x}$ films is changed as a function of the boron-to-titanium ratio. The XRD spectrum for pure titanium film shows a highly (002) preferred orientation. For B/Ti=0.59 ratio only a single TiB phase that shows a (111) preferred orientation is observed. However, the $\textrn{TiB}_{x}$ phase with the hexagonal structure of the $AlB_2$(C32) type appears as the boron concentration increase, and only a single $\textrn{TiB}_{x}$ phase is observed for $B/Ti \ge 2.0$ ratio. The $\textrn{TiB}_{x}$/Si samples reveal a tensile stress (3~$20{\times}^9$dyn/$\textrm{cm}^2$) in the overall composition of the films, although the magnitude of the residual stresses is depended on the nominal B/Ti ratio.

• Progress in Medical Physics
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• v.16 no.2
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• pp.77-81
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• 2005

To determine the appropriate method out of various available methods to measure build-up doses, the measurements and comparisons of depth doses of build-up region including the surface dose were executed using the Attix parallel-plate ionization chamber, the Markus chamber, a cylindrical ionization chamber, and a diode detector. Based on the measurements using the Attix chamber, discrepancies of the Markus chamber were within $2\%$ for the open field and increased up to $3.9\%$ in the case of photon beam containing the contaminant electrons. The measurements of an cylindrical ionization chamber and a diode detector accord with those of the Attix chamber within $1.5\%\;and\;1.0\%$ and after those detectors were completely immersed in the water phantom. The results suggest that the parallel-plate chamber is the best choice to measure depth doses in the build-up region containing the surface, however, using cylindrical ionization chamber or diode detector would be a reasonable choice if no special care is necessary for the exact surface dose.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.52.1-52.1
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• 2011

최근에 에너지 자원의 고갈이 다가오는 상황에서 태양전지 분야가 주목받고 있으며 이에 대한 시장이 급격하게 확대되고 있다. 그러나 현재의 태양전지는 주를 이루고있는 실리콘태양전지의 경우 원재료 수급이 불안정하여 가격 변동이 심하다. 따라서 이를 대체할 2세대 태양전지인 박막형 태양전지의 연구가 활발히 이루어지고 있다. 박막형 태양전지 중에서도 주목받고 있는 것은 Cu(In,Ga)$Se_2$(CIGS)박막 태양전지이다. CIGS는 Ga의 농도에 따라 1.02~1.68eV의 다양한 에너지 밴드갭을 갖는 직접천이형 반도체 물질이다. 또한 $1{\times}10^5cm^{-1}$의 높은 광흡수계수를 가지고 있으며, $450{\sim}590^{\circ}C$의 고온공정에서도 매우 안정하여 열화현상이 거의 보이지 않아 박막형 광흡수층 재료로서 적합하다. 흡수층을 제조하는 방법은 여러 가지가 있지만, 본 연구에서는 균일성이 뛰어나고 원료사용효율이 높은 sputtering 방법을 사용하였다. 그리고 결정화하기위해서 유독기체를 사용하는 셀.렌.화. (selenization) 방법 대신 전자빔을 조사하는 방법을 채택하였다. sputtering을 통한 CIGS precursor을 제조하기위해 2~3개의 화합물target을 사용하는데, 대표적인 방법으로 동시에 sputtering하는 co-sputtering 방법과 각각의 단일 층을 쌓아 제조하는 stack형으로 분류된다. 본 연구는 CIGS precursor를 제조하기 앞서 CuGa 단일 층만을 제조하여 공정조건에 따른 박막을 제조하였다. 제조된 CuGa 단일층은 전자빔 처리에 따른 영향을 알아보기 위해 전자빔의 세기와 공정시간을 달리하여 특성을 알아보았다. 실험에서는 Cu:75wt%,Ga:25wt% 조성의 target을 사용하여 공정 압력을 각각 10~1mTorr로 변화시키며 실험을 실시하였으며 공정 power는 50W, 70W, 100W로 변화 시키며 실험을 실시하였다. 이때 실험의 초기진공은 turbo-molecular pump를 이용하여 $1{\times}10^{-6}torr$ 이하로 하였으며, Target과 기판사이의 거리는 모두 같은 조건으로 고정하여 실험을 실시하였다. 박막의 균일성을 증가시키기 위하여 5 rpm의 속도로 기판을 회전하였으며 기판 온도는 가열하지 않고 상온에서 전구체를 증착하였다. 그 후 전자빔의 세기를 고정 시킨 후 전자빔 조사 시간을 조절하여 전자빔 조사 전후의 특성을 각각 분석하였다. 전기적특성은 Hall effect, 4-point probe, 구조적 특성은 SEM,EDS, XRD, XRF 를 이용하여 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.