• Progress in Medical Physics
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• v.27 no.4
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• pp.272-276
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• 2016

To investigate the optimum x-ray tube design for the dental radiology, factors affecting x-ray beam characteristics such as tungsten target thickness and anode angle were evaluated. Another goal of the study was to addresses the anode heel effect and off-axis spectra for different target angles. MCNPX has been utilized to simulate the diagnostic x-ray tube with the aim of predicting optimum target angle and angular distribution of x-ray intensity around the x-ray target. For simulation of x-ray spectra, MCNPX was run in photon and electron using default values for PHYS:P and PHYS:E cards to enable full electron and photon transport. The x-ray tube consists of an evacuated 1 mm alumina envelope containing a tungsten anode embedded in a copper part. The envelope is encased in lead shield with an opening window. MCNPX simulations were run for x-ray tube potentials of 70 kV. A monoenergetic electron source at the distance of 2 cm from the anode surface was considered. The electron beam diameter was 0.3 mm striking on the focal spot. In this work, the optimum thickness of tungsten target was $3{\mu}m$ for the 70 kV electron potential. To determine the angle with the highest photon intensity per initial electron striking on the target, the x-ray intensity per initial electron was calculated for different tungsten target angles. The optimum anode angle based only on x-ray beam flatness was 35 degree. It should be mentioned that there is a considerable trade-off between anode angle which determines the focal spot size and geometric penumbra. The optimized thickness of a target material was calculated to maximize the x-ray intensity produced from a tungsten target materials for a 70 keV electron energy. Our results also showed that the anode angle has an influencing effect on heel effect and beam intensity across the beam.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.289-292
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• 1995

In this experiment the specimen is selected for epoxy resin used in the molding compound materials for the power semiconductors. The specimen was divided into the two parts. one is a specimen without irradiation, the other is irradiated with electron beam, of which dose is 1[Mrad], 2[Mrad], 4[Mrad], 8[Mrad] and 24[Mrad], respectively. From the analysis for the physical properties of the specimen, the carbonyl group which is asffact the electrical properties is decreased according to increase the dose of the electron beam. In the measurement of dielectric characteristics among the electrical properties, the frequency dependance of the dielectric characteristics is confirmed that its ${\beta}$-peak is represented by one peak due to attribute to the main chain below 50[$^{\circ}C$], and two peak above the temperature 100[$^{\circ}C$].

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.370-372
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• 1995

This paper mainly, describes the electrical characteristics caused by the change of structure in solid state of specimen by electron beam irradiation of high temperature-low expension type molding materials of power semiconductor element. The experiments on physical properties and electrical characteristics for the specimen irradiated electron beam are carried ont. For the investigation on physical properties, XRD analysis is used. And for the experiment of electrical characteristics, measurement of volumn resistivity is used.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2172-2174
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• 2005

MgO has been used as the material of the protecting layer for AC PDP. AC PDP is influenced by characteristics of the surface glow discharge on the MgO thin film. Because MgO thin film is practically discharge electrodes, the discharge characteristics of MgO thin film should be varied with the method of deposition. In this study, changing order and time of deposition, we use electron beam evaporation system and R.F reactive magnetron sputtering system in the MgO deposition. Particularly, after using electron beam evaporation system, we use R.F. reactive magnetron sputtering system in the MgO deposition, then we could get lower amount of charge and higher luminance efficiency than only using electron beam evaporation system.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.360-360
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• 2011

In this work, SUS310S used for valve plate assembly was electron beam (EB) welded to determine the influence of the parametric conditions on the characteristics of the weld and to minimize porosity and micro-fissures among others. The evolution in the weld geometry and microstructure was examined as a function of the process conditions such as beam current and focusing current under a constant welding speed and accelerating voltage. The integrity of the EB welds in SUS310S was examined for defects (e.g. cracking, porosity, etc.), adequate penetration depth, and tolerable weld width deviation for the various welding conditions. Optical microscopy (OM), x-ray photoelectron spectroscopy analysis (XPS), scanning electron microscopy (SEM) and 3D micro-computed tomography (Micro-CT) for the cross section analysis of the electron beam welded SUS310S were utilized. The tensile strength and hardness were analyzed for the mechanical properties of the EB weld. At the 6 kV accelerating voltage, it was determined that a satisfactory penetration depth and desirable weld width deviation requires a beam current of 30 mA and a focusing current of 0.687 A at the welding speed of 25 mm/sec.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1288-1293
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• 2007

The present study covers the design and analysis of a thermionic scanning electron microscope (SEM) column. The SEM column contains an electron optical system in which electrons are emitted and moved to form a focused beam, and this generates secondary electrons from the specimen surfaces, eventually making an image. The electron optical system mainly consists of a thermionic electron gun as the beam source, the lens system, the electron control unit, and the vacuum unit. In the design process, the dimension and capacity of the SEM components need to be optimally determined with the aid of finite element analyses. Considering the geometry of the filament, a three-dimensional (3D) finite element analysis is utilized. Through the analysis, the beam emission characteristics and relevant trajectories are predicted from which a systematic design of the electron optical system is enabled. The validity of the proposed 3D analysis is also discussed by comparing the directional beam spot radius. As a result, a prototype of a thermionic SEM is successfully developed with a relatively short time and low investment costs, which proves the adoptability of the proposed 3D analysis.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.56-63
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• 2023

In this paper, we studied the effect of electron beam irradiation on sol-gel indium-gallium-zinc oxide (IGZO) thin films under air and nitrogen atmosphere and carried out the electrical characterization of the s ol-gel IGZO thin film transistors (TFTs). To investigate the optical properties, crystalline structure and chemical state of the sol-gel IGZO thin films after electron beam irradiation, UV-Visible spectroscopy, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were carried out. The sol-gel IGZO thin films exhibited over 80% transmittance in the visible range. The XRD analysis confirmed the amorphous nature of the sol-gel IGZO films regardless of electron beam irradiation. When electron beam irradiation was conducted in a nitrogen (N₂) atmosphere, we observed an increased proportion of peaks related to M-O bonding contributed to the improved quality of the thin films. Sol-gel IGZO TFTs subjected to electron beam exposure in a nitrogen atmosphere exhibited enhanced electrical characteristics in terms of on/off ratio and electron mobility. In addition, the electrical parameters of the transistor (on/off ratio, threshold voltage, electron mobility, subthreshold swing) remained relatively stable over time, indicating that the electron beam exposure process in a nitrogen atmosphere could enhance the reliability of IGZO-based thin-film transistors in the fabrication of sol-gel processed TFTs.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.767-768
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• 2013

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.756-762
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• 1997

In this paper the change of electrical properties of transformer oil due to electron beam irradiation is investigated. The specimens are produced with a some different dose of 0.5[Mrad], 1[Mrad] and 2[Mard] except for original specimen. The physical properties of each specimen is analyzed by using the FT-IR spectrum. So it is confirmed that carbonyl groups are increased according to the increase of electron beam dose and also that the nitric compounds are disappeared. The magnitude of dielectric dissipation factor appears maximum value by the contribution of dipoles and ions in the low temperature low voltage region and it is stable due to the saturation of carriers in the high temperature high voltage region in the electric conduction characteristics. Volume resistivity is also measured one of original specimen is larger than irradiated specimen.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1195-1198
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• 2005

The improvement of efficiency is the one of the most important part in AC PDPs . To achieve high efficiency, high VUV emission efficiency and High ion induces secondary electron emission coefficient are needed. We have measured the emission spectra of vacuum ultraviolet rays and ion induced secondary electron emission coefficient of MgO protective layer in surface discharge AC-PDP with binary and ternary gas mixtures. We have investigated electro-optical characteristics of AC-PDPs to optimum gas mixture for high efficient.