• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2001년도 추계종합학술대회
• /
• pp.613-616
• /
• 2001

공 부활제로 KCI, Cl, S 및 P를 각각 첨가한 발광충을 전자 빔 방법에 의해 성장시킨 2중 절연구조의 SrS:Ce electroluminescent(EL) device를 제작하여, 공 부활제가 EL device의 휘도에 미치는 영향을 조사였다. 휘도 및 발광파장은 첨가되는 공 부활제 및 농도에 의하여 상당한 영향을 받고 있음을 알았다. 어느 공 부활제에서나 전체 휘도는 0.2 mol%에서 최고를 나타냈으며, CeCl$_3$+KCL를 첨가한 소자가 최고 850cd/$m^2$를 나타내었다. 또한 CeP를 첨가한 소자의 경우 전체 휘도는 낮았으나 청색 휘도의 비율은 가장 높았으며, 이 비율은 농도의 상승에 따라 증가했다.

• 대한의용생체공학회:의공학회지
• /
• 제17권4호
• /
• pp.479-490
• /
• 1996

To utilize collagen as an implantable biomateriall the mcct widely used bovine skin origin Type I collagen was investigated Pepsin treated, Type I atelocollagen was extracted and crosslinked by the ultraviolet(W) ray with wavelength of 254nm or by various concentrations of glutaraldehyde to produce collagen membranes. The crosslink rates of the specimens were observed by a polarized light microscope, a scanning electron microscope, and a Fourier transform infrared (FT-lR) spectrometer. The followings are concluded 1. The collagen membranes produced by both 2.5% glutaraldehyde solution and 254nm UV ray irra- diation demonstrated similar morphologies on polarized light microscopic and scanning electron microscopic views. 2. The chemical structures of the crosslinked membranes by glutaraldehyde over 2.5% in concentrations revealed similar intensities to that of the UV ray irradiated one in FT-lR investigation. 3. To obtain optimal croulink in bovine stalin origin Type I atelocollagen, 2.5% glutaraldehyde solution or UV ray irradiation with 254nm wavelength is acceptable.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2012년도 춘계학술발표대회
• /
• pp.68.1-68.1
• /
• 2012

The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.

• Bulletin of the Korean Chemical Society
• /
• 제23권9호
• /
• pp.1309-1338
• /
• 2002

The fluorescence and photoisomerization quantum yields of trans-1-(9-anthryl)-2-(4-pyridyl)ethene (t-4-APyE), 1-(10-methyl-9-anthryl)-2-(4-pyridyl)ethene (t-4-MeAPyE), and 1-(10-chloro-9-anthryl)-2-(4- pyridyl)ethene (t-4-ClAPyE) were measured in cyclohexane, acetonitrile, and methanol at room temperature.Polar solvents result in the drastic reduction of fluorescence quantum yield and increase of photoisomerization quantum yield for all three compounds. These results are probably due to the stabilization of intramolecular charge transfer (ICT) excited state in polar solvent. The higher contribution of ICT in the presence of more electron-donating methyl substituent, manifested by largest positive fluorescence solvatochromism, indicates that the pyridine ring acts as an electron acceptor. Protonation or methylation makes pyridine ring stronger electron acceptor and causes long-wavelength ground state charge transfer absorption band and complete quenching of fluorescence. The fluorescence from t-4-APyE derivatives can be switched off responding external stimuli viz. medium polarity, protonation, or methylation.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1996년도 하계학술대회 논문집 C
• /
• pp.1898-1900
• /
• 1996

The Laser aided diagnostic method makes it possible to diagnose plasma characteristics which have never been done by other one. The aim of this study is to measure the electron density profile of an arc plasma by Mach-Zenhder interferometer. The two laser beams (He-Ne and Argon Lasers), which are different in wavelength, pass across an arc plasma and meet a change of refractivity which makes fringe shifts. From this effects we could find densities of electron and neutral particle.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.195.1-195.1
• /
• 2016

Currently, as Plasma application is expanded to the industrial and medical industrial, low temperature plasma applications became important. Especially in medical and biology, many researchers have studied about generated radical species in atmospheric pressure low temperature plasma directly adapted to human body. Therefore, so measurement their plasma parameter is very important work and is widely studied all around world. One of the plasma parameters is electron density and it is closely relative to radical production through the plasma source. some kinds of method to measuring the electron density are Thomson scattering spectroscopy and Millimeter-wave transmission measurement. But most methods have very expensive cost and complex configuration to composed of experiment system. We selected Michelson interferometer system which is very cheap and simple to setting up, so we tried to measuring electron density by laser interferometer with laser beam chopping module for measurement of temporal phase difference in plasma jet. To measuring electron density at atmospheric pressure Ar plasma jet, we obtained the temporal phase shift signal of interferometer. Phase difference of interferometer can occur because of change by refractive index of electron density in plasma jet. The electron density was able to estimate with this phase difference values by using physical formula about refractive index change of external electromagnetic wave in plasma. Our guiding laser used Helium-Neon laser of the centered wavelength of 632 nm. We installed chopper module which can make a 4kHz pulse laser signal at the laser front side. In this experiment, we obtained more exact synchronized phase difference between with and without plasma jet than reported data at last year. Especially, we found the phase difference between time range of discharge current. Electron density is changed from Townsend discharge's electron bombardment, so we observed the phase difference phenomenon and calculated the temporal electron density by using phase shift. In our result, we suggest that the electron density have approximately range between 1014~ 1015 cm-3 in atmospheric pressure Ar plasma jet.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.313-314
• /
• 2005

Organic light emitting diodes(OLEDs) are widely used as one of the information display techniques. We synthesized (1,10-phenanthroline)- (8-hydroxyquinoline) [Zn(Phen)q]. We studied the improvement of OLEDs properties using Zn(phen)q. The Ionization Potential(IP) and the Electron Affinity(EA) of Zn(phen)q investigated using cyclic voltammetry(CV). The IP, EA and Eg were 7.leV, 3.4eV and 3.7eV, respectively. The PL spectrum of Zn(phen)q was yellowish green as the wavelength of 535nm. In this study, we used Zn(phen)q as electron transporting layer(ETL) inserted between emitting layer(EML) and cathode. As a result, Zn(phen)q is useful as electron transporting layer to enhance the performance of OLEDs.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.108-108
• /
• 2010

We have generated Ne-Xe plasma in dense plasma focus device with hypocycloidal pinch for extreme ultraviolet (EUV) lithography and investigated an electron temperature. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ne-Xe(30%) gas in accordance with pressure. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature of the hypocycloidal pinch plasma focus could be obtained by the optical emission spectroscopy (OES). The electron temperature has been measured by Boltzmann plot. The light intensity is proportion to the Bolzman factor. We have been measured the electron temperature by observation of relative Ne-Xe intensity. The EUV emission signal whose wavelength is about 6~16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD) and the line intensity has been detected by using a HR4000CG Composite-grating Spectrometer.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.220-220
• /
• 2011

The Ne-Xe plasmas in dense plasma-focus device with coaxial electrodes were generated for extreme ultraviolet (EUV) lithography. The influence of gas mixture ratio, Ne-Xe (1, 10, 15, 20, 25, 30, 50%) mixture gas, on EUV emission measurement, EUV intensity and electron temperature in the coaxially focused plasma were investigated. An input voltage of 4.5 kV was applied to the capacitor bank of 1.53mF and the diode chamber was filled with Ne-Xe mixture gas at a prescribed pressure. The inner surface of the cylindrical cathode was lined by an acetal insulator. The anode was made of tin metal. The EUV emission signal of the wavelength in the range of 6~16 nm has been detected by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission line was also detected by the composite-grating spectrometer of the working wavelength range of 200~1100 nm (HR 4000CG). The electron temperature is obtained by the optical emission spectroscopy (OES) and measured by the Boltzmann plot with the assumption of local thermodynamic equilibrium (LTE).

• 한국안광학회지
• /
• 제7권1호
• /
• pp.75-78
• /
• 2002

파장범위 620~820nm에서 반사가 큰 $TiO_2/SiO_2$ 33층 박박 mirror를 설계하고 전자 빔 증착 방법으로 제작하였다. 다층박막은 BK7 유리 기판에 연속적으로 증착하였다. 고반사박막 설계는 중심파장 ${\lambda}_0$ 주변에 stopband가 만들어지는 것과 같은, 고굴절률을 가지는 층($n_H$)과 저굴절률을 가지는 층($n_L$)을 반복해서 하였다. 입사각 $40^{\circ}{\pm}7^{\circ}$인 투과도 측정 스펙트럼에서 전체적으로 파장범위 620~820nm에서 99.9%의 반사를 보였다. 파장이 700~740nm에서 투과도가 큰 피크를 보였다.