• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.30-34
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• 2011

We investigated the structural, electrical and optical characteristics of thin films with ITO deposited by a low temperature RF reactive magnetron sputtering. The deposited thin films were annealed for 2 hours at various temperatures of $50^{\circ}C$, $100^{\circ}C$, $150^{\circ}C$, $200^{\circ}C$ and $250^{\circ}C$ and were analyzed by using X-ray diffractometer, scanning electron microscopy and 4 point probe. The films annealed at temperatures higher than $150^{\circ}C$ were found to be crystallized and their electrical resistance were decreased from $40{\Omega}cm$to $18{\Omega}cm$. The optical transmittance of the film annealed at $150^{\circ}C$ was increased by over 87% in the 450 nm ~ 900 nm wavelength range. Our results indicate that the films with ITO deposited at even a low temperature can show better optical and electrical properties through a proper heat treatment.

• Journal of Conservation Science
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• v.36 no.3
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• pp.162-177
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• 2020

Research was conducted to characterize the copper production and smelting process with 11 copper smelting by-products (copper slag and copper crucible) excavated from the NA and LA areas at the Gwanbuk-ri archeological site in Buyeo. Scanning electron microscopy-energy dispersive spectroscopy, wavelength dispersive X-ray fluorescence, X-ray diffraction, and Raman microspectroscopy were employed in the analysis. The research results reveal that the copper slag from Gwanbuk-ri contained silicate oxide, magnetite, fayalite, and delafossite, which are typical characteristics of crucible slag and refined slag. The outward appearance and microstructure of the slag were grouped as follows: 1. glassy matrix + Cu prill, 2. glassy matrix + Cu prill + magnetite, 3. silicate mineral matrix + Cu prill, 4. crystalline (delafossite and magnetite) + amorphous (Cu prill), 5. magnetite + fayalite, and 6. slag from slag. The copper slags from Guanbuk-ri were found to contain residues of impurities such as SiO₂, Al₂O₃, CaO, SO₄, P₂O₅, Ag₂O, and Sb₂O₃ in their microstructure, and, in some cases, it was confirmed that copper, tin and lead are alloys. These results indicate that refining of intermediate copper(including impurities) and refining of alloys of copper(including impurities) - tin and refining of copper(including impurities) - tin - lead took place during the copper production process at Gwanbuk-ri, Buyeo.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.5
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• pp.230-234
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• 2013

IR cut-off thin films consisted of ATO nanoparticles were successfully fabricated by sol-gel method. The coating solution was synthesized with organic/inorganic hybrid binder and ATO colloidal solution and ATO thin films were coated on a slide glass with the withdrawal speed of 5~40 mm/s. As the withdrawal speed increased from 5 mm/s to 40 mm/s, the thickness of coating thin films also increased from $1.05{\mu}m$ to $4.25{\mu}m$ and the IR cut-off in wavelength of 780~2500 nm increased from 49.5 % to 66.7 %. In addition, the pencil hardness of ATO thin films dried at $80^{\circ}C$ was ca. 5H and the coating films were not removed after a cross cutter tape test because of the hybrid binder synthesized with tetraethylorthosilicate and methyltrimethoxysilane. The surface morphologies, optical properties and film thickness of prepared thin films with a different withdrawal speed were measured by field emission scanning electron microscope (FE-SEM), UV-Vis spectrophotometer, and Dektak.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.267-271
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• 2010

Super hydrophilic and high transparent $TiO_2$ thin films were successfully fabricated by sol-gel method without an irradiation of UV light. In addition, surfactant Tween 80 was used for increasing the transmittance of the thin films. When the contents of Tween 80 in $TiO_2$ solution were 0.0, 1.0, 3.0, 5.0 wt%, the transmittance of $TiO_2$ thin films was ca. 74.31%, 74.25%, 79.69%, 81.99% at 550 nm wavelength, respectively. The contact angles of fabricated $TiO_2$ thin films with or without Tween 80 were from ca. $4.0^{\circ}$ to $4.5^{\circ}$. The $TiO_2$ thin films annealed over $400^{\circ}C$ showed anatase crystal structure and the photocatalytic property that decomposed methyl orange with UV irradiation. The surface morphologies, optical properties and contact angle of prepared thin films with different contents of Tween 80 were evaluated by field emission scanning electron microscope (FE-SEM), X-ray diffratometer (XRD), UV-Vis spectrophotometer and contact angle meter.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.28-34
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• 1999

We fabricated a planar ultra-violet photodetector whose ohmic and schottky contacts were respectively formed with evaporated Al and Pt on the GaN layer. To examine the applicability of the device to the UV sensor, we investigated its electrical and optical characteristics. The GaN layer on the sapphire waver had $7.8{\times}10^{16}cm^{-3}$ of doping concentnation and the $138 cm^2/V{\cdot}s$ of electron mobility and it absorbed the spectrum of the light below 325 nm wavelength. It had the responsivity of 2.8 A/W of at 325 nm, and the signal to noise ratio(SNR) of $4{\times}10^4$, and the noise equivalent power(NEP) of $3.5{\times}10^9$W under 5 V reverse bias. These results confirmed that the GaN schottky diode had a solar blind properly when it was applied to the UV photodetector.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.262-267
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• 2009

Superhydrophobic $TiO_2$ thin films were successfully fabricated on a glass substrate by wet process. Layer-by-layer (LBL) deposition and liquid phase deposition (LPD) methods were used to fabricate the thin films of micro-nano complex structure with a high roughness. To fabricate superhydrophobic $TiO_2$ thin films, the (PAH/PAA) thin films were assembled on a glass substrate by LBL method and then $TiO_2$ nanoparticles were deposited on the surface of (PAH/PAA) thin film by LPD method, Subsequently, hydrophobic treatment using fluoroalkyltrimethoxysilane (FAS) was carried out on the surface of prepared $TiO_2$ thin films. The $TiO_2$ thin film fabricated with 45 minutes immersion time on $(PAH/PAA)_{10}$ showed the RMS roughness of 65.6nm, water contact angel of $155^{\circ}$ and high transmittance of above 80% (>650nm in wavelength) after the hydrophobic treatment. The Surface morphologies, optical properties and contact angel of prepared thin films with different experimental conditions were measured by field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), UV-Vis spectrophotometer and contact angle meter.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.162-162
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• 2010

InSb has received great attentions as a promising candidate for the active layer of infrared photodetectors due to the well matched band gap for the detection of $3{\sim}5\;{\mu}m$ infrared (IR) wavelength and high electron mobility (106 cm2/Vs at 77 K). In the fabrication of InSb photodetectors, passivation step to suppress dark currents is the key process and intensive studies were conducted to deposit the high quality passivation layers on InSb. Silicon dioxide (SiO2), silicon nitride (Si3N4) and anodic oxide have been investigated as passivation layers and SiO2 is generally used in recent InSb detector fabrication technology due to its better interface properties than other candidates. However, even in SiO2, indium oxide and antimony oxide formation at SiO2/InSb interface has been a critical problem and these oxides prevent the further improvement of interface properties. Also, the mechanisms for the formation of interface phases are still not fully understood. In this study, we report the quantitative analysis of indium and antimony oxide formation at SiO2/InSb interface during plasma enhanced chemical vapor deposition at various growth temperatures and subsequent heat treatments. 30 nm-thick SiO2 layers were deposited on InSb at 120, 160, 200, 240 and $300^{\circ}C$, and analyzed by X-ray photoelectron spectroscopy (XPS). With increasing deposition temperature, contents of indium and antimony oxides were also increased due to the enhanced diffusion. In addition, the sample deposited at $120^{\circ}C$ was annealed at $300^{\circ}C$ for 10 and 30 min and the contents of interfacial oxides were analyzed. Compared to as-grown samples, annealed sample showed lower contents of antimony oxide. This result implies that reduction process of antimony oxide to elemental antimony occurred at the interface more actively than as-grown samples.

• Resources Recycling
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• v.18 no.4
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• pp.24-30
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• 2009

Rare earth based calcium aluminate phosphor ($CaAl_2O_4:Eu^{2+}$, $Nd^{3+}$) supported $TiO_2$ nanoparticles are synthesized by using sol-gel method, which are further characterized using powder X-ray diffraction (XRD), fourier transform infrared (FT-IR), diffuse reflectance UV-Visible spectroscopy (DRS UV-Vis) and transmission electron microscopy (TEM). The XRD pattern of as-prepared and sintered phosphor supported $TiO_2$ does not show the tendency to change the crystal structure from anatase to rutile phase up to $600^{\circ}C$. This indicates that the phosphor support might inhibit the densification and crystallite growth by providing dissimilar boundaries. The diffuse reflectance spectral (DRS) measurements showed shift towards longer wavelength indicating reduction in the band-gap energy as compared to free $TiO_2$. The FT-IR spectra of phosphor supported $TiO_2$ nanoparticles show shift in the peak positions to lower wavelengths. This indicates that the $TiO_2$ nanoparticles are not free, but covalently bonded to the phosphor support. TEM micrographs show presence of crystalline and spherical $TiO_2$ nanoparticles (8 - 15 nm diameter) dispersed uniformly on the surface of phosphor.

• Applied Chemistry for Engineering
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• v.23 no.5
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• pp.462-466
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• 2012

$\beta$-cyclodextrin ($\beta$-CD) polymers were prepared in a strong alkali condition solution (NaOH solution 30% (w/v)) using epichlorohydrin (EPI) as a cross-linker, and the molar ratio of EPI to $\beta$-CD was 10 : 1. The $\beta$-CD content in $\beta$-CD polymers is about 52%. In order to get the photo-responsible and pH-responsible, cinnamic acid was added to be inserted into the cavities of $\beta$-CD due to the hydrophobic interaction. The complex formation was confirmed using transmission electron microscope. The dimerization degree of complexes increased under UV irradiation at $\lambda$ = 365 nm but decreased under the UV irradiation at $\lambda$ = 254 nm. Dynamic light scattering analysis of particle sizes showed that the sizes of complexes did not change with different UV wavelength. Moreover, the complexes were pH-responsible because of the carboxyl group of cinnamic acid, but the size and zeta potential of the complex did not change in strong acid and alkali conditions.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.