• 제목/요약/키워드: Electron transfer layer

검색결과 133건 처리시간 0.027초

Layer Controlled Synthesis of Graphene using Two-Step Growth Process

  • Han, Jaehyun;Yeo, Jong-Souk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.221.2-221.2
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    • 2015
  • Graphene is very interesting 2 dimensional material providing unique properties. Especially, graphene has been investigated as a stretchable and transparent conductor due to its high mobility, high optical transmittance, and outstanding mechanical properties. On the contrary, high sheet resistance of extremely thin monolayer graphene limits its application. Artificially stacked multilayer graphene is used to decrease its sheet resistance and has shown improved results. However, stacked multilayer graphene requires repetitive and unnecessary transfer processes. Recently, growth of multilayer graphene has been investigated using a chemical vapor deposition (CVD) method but the layer controlled synthesis of multilayer graphene has shown challenges. In this paper, we demonstrate controlled growth of multilayer graphene using a two-step process with multi heating zone low pressure CVD. The produced graphene samples are characterized by optical microscope (OM) and scanning electron microscopy (SEM). Raman spectroscopy is used to distinguish a number of layers in the multilayer graphene. Its optical and electrical properties are also analyzed by UV-Vis spectrophotometer and probe station, respectively. Atomic resolution images of graphene layers are observed by high resolution transmission electron microscopy (HRTEM).

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Current Increase Effect and Prevention for Electron Trapping at Positive Bias Stress System by Dropping the Nematic Liquid Crystal on the Channel Layer of the a-InGaZnO TFT's

  • Lee, Seung-Hyun;Heo, Young-Woo;Kim, Jeong-Joo;Lee, Joon-Hyung
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.163-163
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    • 2015
  • The effect of nematic liquid crystal(5CB-4-Cyano-4'-pentylbiphenyl) on the amorphous indium gallium zinc oxide thin film transistors(a-IGZO TFTs) was investigated. Through dropping the 5CB on the a-IGZO TFT's channel layer which is deposited by RF-magnetron sputtering, properties of a-IGZO TFTs was dramatically improved. When drain bias was induced, 5CB molecules were oriented by Freedericksz transition generating positive charges to one side of dipoles. From increment of the capacitance by orientation of liquid crystals, the drain current was increased, and we analyzed these phenomena mathematically by using MOSFET model. Transfer characteristic showed improvement such as decreasing of subthreshold slope(SS) value 0.4 to 0.2 and 0.45 to 0.25 at linear region and saturation region, respectively. Furthermore, in positive bias system(PBS), prevention effect for electron trapping by 5CB liquid crystal dipoles was observed, which showing decrease of threshold voltage shift [(${\delta}V$]_TH) when induced +20V for 1~1000sec at the gate electrode.

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Metal-insulator Transition in $(Sr_{0.75},\;La_{0.25})TiO_3$ Ultra-thin Films

  • Choi, Jae-Du;Choi, Eui-Young;Lee, Yun-Sang;Lee, Jai-Chan
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.19.2-19.2
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    • 2011
  • The $(Sr_{0.75},\;La_{0.25})TiO_3$ (SLTO) ultra-thin films with various thicknesses have been grown on Ti-O terminated $SrTiO_3$(100) substrate using Laser-Molecular Beam Epitaxy (Laser MBE). By monitoring the in-situ specular spot intensity oscillation of reflection high energy electron diffraction (RHEED), we controlled the layer-by-layer film growth. The film structure and topography were verified by atomic force microscopy (AFM) and high resolution thin film x-ray diffraction by the synchrotron x-ray radiation. We have also investigated the electronic band structure using x-ray absorption spectroscopy (XAS). The ultra thin SLTO film exhibits thickness driven metal-insulator transition around 8 unit cell thickness when the film thickness progressively reduced to 2 unit cell. The SLTO thin films with an insulating character showed band splitting in Ti $L_3-L_2$ edge XAS spectrum which is attributed to Ti 3d band splitting. This narrow d band splitting could drive the metal-insulator transition along with Anderson Localization. In optical conductivity, we have found the spectral weight transfer from coherent part to incoherent part when the film thickness was reduced. This result indicates the possibility of enhanced electron correlation in ultra thin films.

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The Effect of Surface Plasmon on Internal Photoemission Measured on Ag/$TiO_2$ Nanodiodes

  • Lee, Hyosun;Lee, Young Keun;Park, Jeong Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.662-662
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    • 2013
  • Over the last several decades, innovative light-harvesting devices have evolved to achieve high efficiency in solar energy transfer. Research on the mechanisms for plasmon resonance is very desirable to overcome the conventional efficiency limits of photovoltaics. The influence of localized surface plasmon resonance on hot electron flow at a metal-semiconductor interface was observed with a Schottky diode composed of a thin silver layer on $TiO_2$. The photocurrent is generated by absorption of photons when electrons have enough energy to travel over the Schottky barrier and into the titanium oxide conduction band. The correlation between the hot electrons and the surface plasmon is confirmed by matching the range of peaks between the incident photons to current conversion efficiency (IPCE, flux of collected electrons per flux of incident photons) and UV-Vis spectra. The photocurrent measured on Ag/$TiO_2$ exhibited surface plasmon peaks; whereas, in contrast to the Au/$TiO_2$, a continuous Au thin film doesn't exhibit surface plasmon peaks. We modified the thickness and morphology of a continuous Ag layer by electron beam evaporation deposition and heating under gas conditions and found that the morphological change and thickness of the Ag film are key factors in controlling the peak position of light absorption.

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DCM 계열을 이용한 OLED의 전기적인 발광 특성에 관한 연구 (Light Emitting Characteristics of Multi-layer OLEO Fabricated with DCM)

  • 전민호;윤석원;임성택;신동명
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.57-60
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    • 2002
  • In generally, the guest-emitter doped system has been reported to give a bright electroluminescence(EL). The purpose of using doped system is to improve for increasing lifetime and efficiency, and tuning multicolor light. This indicates an enhanced electron-hole recombination rate in emitting layer. The purpose of this study is to obtain the high performance EL devices for flat panel display with red emission. We fabricated EL devices using the guest-host system. where DCM derivatives were taken as a dopant. The devices are fabricated in multilayer system with various concentration of the dopant (red light emitting dye). We measured the I-V characteristics and EL spectra from these devices. and we compared with photoluminescence(PL) quantum yield among the DCM derivatives. The emission mechanism of devices is participated in energy transfer. The energy transfer from these hosts to DCM generates luminescence spectra that vary from yellow red to red, depending on DCM derivatives. Absorption and emission spectra of organic materials composing the devices depend on the emission materials doped with the DCM derivatives. We demonstrated that the high EL efficiency can be achieved by doping host material with DCM derivatives and molecular steric structures

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Eicosanoic Acid Langmuir-Blodgett(LB) 박막을 이용한 분자 다이오드의 전기적 특성 (Electrical Properties of Molecular Diode Using Eicosanoic Acid Langmuir-Blodgett(LB) Monolayer Film)

  • 구자룡;이호식;권혁주;손병청
    • 한국응용과학기술학회지
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    • 제20권2호
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    • pp.148-153
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    • 2003
  • Electron transfer through an Langmuir-Blodgett(LB) monolayer film sandwiched between metal electrodes. We used an eicosanoic acid material and the material was very famous as a thin film insulating material. Eicosanoic acid monolayer was deposited by Langmuir-Blodgett(LB) technique and a subphase was a $CdCl_2$ solution as a 2${\times}10^{-4}$ mol/L. Also we used a bottom electrode as an Al/$Al_2O_3$ and a top electrode as a Al and Ti/Al. Here, the $Al_2O_3$ on the bottom electrode was deposited by thermal evaporation method. The $Al_2O_3$ layer was acted on a tunneling barrier and insulating layer in tunnel diode. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was about 24 ${\AA}^2$/molecule. When the positive and negative bias applied to the molecular device, the behavior shows that a tunnel switching characteristics. This result were analyzed regarding various mechanisms.

HTL/ETL 두께 비율에 따른 EL 소자의 발광 특성 (Light-emitting property of the EL device with the thickness ratio of the HTL.ETL)

  • 손철호;여철호;박정일;장선주;박종화;이영종;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.170-173
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    • 2000
  • In this study, we have investigated the light-emitting property of the EL device with the thickness ratio of the HTL/ETL, which was 500$\AA$:500$\AA$, 400$\AA$:600$\AA$, 600$\AA$:400$\AA$. The ALq$_3$ was used for the ETL. We have studied the relation of voltage, contrase, efficiency for current density. Emission was observed above 10mA/$\textrm{cm}^2$ and luminance was measured to be 1030cd/$m^2$ at a current density of 100mA/$\textrm{cm}^2$ in 500$\AA$/500$\AA$ sample. A luminance of over 2500cd/$m^2$ was also observed after the final fabrication process in 500$\AA$/500$\AA$ sample

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Mechanism of workfunction modification on HAT-CN/Cu(111) interface: ab initio study

  • Kim, Ji-Hoon;Park, Yong-Sup;Kwon, Young-Kyun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.357-357
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    • 2010
  • Using ab initio density functional theory, we study the structural and electronic properties of interface between Cu surface and highly electron withdrawing hexaazatriphenylene-hexanitrile (HAT-CN) known as an efficient hole injection layer for organic light emitting diodes (OLEDs). We calculate the equilibrium geometries of the interface with different HAT-CN coverages. Usually, some of C-N bonds located at the edge of the HAT-CN molecule are deformed toward Cu atoms resulting in the reconstruction of Cu surface. By analyzing the electron charge and the potential distributions over the interface, we observe the formation of surface dipoles, which modify the work function at the interface. Such dipole formation is attributed to two origins, one of which is a geometrical nature and the other is a bond dipole. The former is related to structural deformation mentioned above, whereas the latter is due to charge transfer between organic and metal surface.

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Visualization of Extracellular Vesicles of Prokaryotes and Eukaryotic Microbes

  • Kim, Ki Woo
    • Applied Microscopy
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    • 제48권4호
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    • pp.96-101
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    • 2018
  • The release of nanoscale membrane-bound vesicles is common in all three domains of life. These vesicles are involved in a variety of biological processes such as cell-to-cell communication, horizontal gene transfer, and substrate transport. Prokaryotes including bacteria and archaea release membrane vesicles (MVs) (20 to 400 nm in diameter) into their extracellular milieu. In spite of structural differences in cell envelope, both Gram-positive and negative bacteria produce MVs that contain the cell membrane of each bacterial species. Archaeal MVs characteristically show surface-layer encircling the vesicles. Filamentous fungi and yeasts as eukaryotic microbes produce bilayered exosomes that have varying electron density. Microbes also form intracellular vesicles and minicells that are similar to MVs and exosomes in shape. Electron and fluorescence microscopy could reveal the presence of DNA in MVs and exosomes. Given the biogenesis of extracellular vesicles from the donor cell, in situ high-resolution microscopy can provide insights on the structural mechanisms underlying the formation and release of microbial extracellular vesicles.

Influence of a TiCl4 Treatment Condition on Dye-Sensitized Solar Cells

  • Kim, Jung-Kyu;Shin, Ka-Hee;Lee, Kun-Seok;Park, Jong-Hyeok
    • Journal of Electrochemical Science and Technology
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    • 제1권2호
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    • pp.81-84
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    • 2010
  • In dye-sensitized solar cells (DSSCs), the back transfer of photo-generated electrons from FTO glass to triiodide ions in an electrolyte is an important loss mechanism, which leads to low cell efficiency. Recently, this back electron transfer was greatly suppressed by the introduction of a compact $TiO_2$ blocking layer, which was prepared by the treatment of $TiCl_4$ solution. In the present work, more detailed $TiCl_4$ treated surface conditions on FTO substrate were investigated and DSSC performances were correlated with the surface morphology as well as dark current behavior.