• Title/Summary/Keyword: Electron range

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Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

  • Byoung-Gue Min;Jong-Min Lee;Hyung Sup Yoon;Woo-Jin Chang;Jong-Yul Park;Dong Min Kang;Sung-Jae Chang;Hyun-Wook Jung
    • ETRI Journal
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    • v.45 no.1
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    • pp.171-179
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    • 2023
  • We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13㎛-0.16㎛ to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.

UNCERTAINTIES INVOLVED IN THE IONOSPHERIC CONDUCTIVITY ESTIMATION (전리층 전기전도도의 추정과 관련된 불확실성)

  • 곽영실;안병호
    • Journal of Astronomy and Space Sciences
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    • v.19 no.4
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    • pp.243-254
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    • 2002
  • Various uncertainties involved in ionospheric conductivity estimation utilizing the electron density profile obtained from the Sondrestrom incoherent scatter radar are examined. First, we compare the conductivity which is based on raw electron density and the one based on corrected electron density that takes into account the effects of the difference between the electron and ion temperatures and the Debye length. The corrected electron density yields higher Pedersen and Hall conductivities than the raw electron density does. Second, the dependence of collision frequency model on the conductivity estimation is examined. Below 110 km conductivity does not depend significantly on collision frequency models. Above 110 km, however, the collision models affect the conductivity estimation. Third, the influence of the electron and ion temperatures on the conductivity estimation is examined. Electron and ion temperatures carrying an error of about 10% do not seem to affect significantly the conductivity estimation. Fourth, also examined is the effect of the choice of the altitude range of integration in calculating the height-integrated conductivity, conductance. It has been demonstrated that the lower and upper boundaries of the integration are quite sensitive to the estimation of the Hall and Pedersen conductances, respectively.

A Simulation of Diffusion coefficients for electrons in $SF_6$-Ar Gas Mixtures (시뮬레이션에 의한 $SF_6$-Ar혼합기체의 확산계수)

  • Seong, Nak-Jin;Kim, Sang-Nam
    • Proceedings of the KIEE Conference
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    • 2006.10b
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    • pp.163-166
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    • 2006
  • Energy distribution function for electrons in $SF_6$-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range 30${\sim}$300(Td) by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2(%) and 0.5(%) $SF_6$-Ar mixtures were measured by time-of-flight(TOF) method, The results show that the deduced longitudinal diffusion coefficients and transverse diffusion coefficients agree reasonably well with theoretical for a rang of E/N values The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

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Nanoscale Protein Chip based on Electrical Detection

  • Choi, Jeong-Woo
    • 한국생물공학회:학술대회논문집
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    • 2005.04a
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    • pp.18-18
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    • 2005
  • Photoinduced electron transport process in nature such as photoelectric conversion and long-range electron transfer in photosynthetic organisms are known to occur not only very efficiently but also unidirectionally through the functional groups of biomolecules. The basic principles in the development of new functional devices can be inspired from the biological systems such as molecular recognition, electron transfer chain, or photosynthetic reaction center. By mimicking the organization of the biological system, molecular electronic devices can be realized $artificially^{1)}$. The nano-fabrication technology of biomolecules was applied to the development of nano-protein chip for simultaneously analyzing many kinds of proteins as a rapid tool for proteome research. The results showed that the self-assembled protein layer had an influence on the sensitivity of the fabricated bio-surface to the target molecules, which would give us a way to fabricate the nano-protein chip with high sensitivity. The results implicate that the biosurface fabrication using self-assembled protein molecules could be successfully applied to the construction of nanoscale bio-photodiode and nano-protein chip based on electrical detection.

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An Investigation of the Dehydroxylation of Kaolinite Using Energy-Filtering Transmission Electron Microscopy (에너지여과 투과전자현미경을 이용한 카올리나이트의 탈수반응 연구)

  • 이수정;김윤중;문희수
    • Journal of the Mineralogical Society of Korea
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    • v.12 no.1
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    • pp.23-31
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    • 1999
  • The dehydroxylation of kaolinite was investigated in detail by means of energy-filtering transmission electron microscope with both orientations parallel and perpendicular to c. The dehydroxylation could be characterized by the broad background including (0.211) band (20~24$^{\circ}$ 2$\theta$) on X-ray diffraction and by the three halo rings (d-spacing : 3.28~4.40$\AA$ (near (02,11) band), 2.41~245$\AA$ (near (20,13) band), 1.16~1.23$\AA$ (near (0.8,44) band)), and (02,11) and (20,13) spots on electron diffraction. These indicate existence of a short-range order along the a and b axes. Interplanar spacing of (001) is reduced to about 6.86$\AA$ and the sharp additional intensity maximum of about 14.2$\AA$ reveals that metakaolinite has a modulated structure along c axis. It is proposed that the modulated structure is attributed to the domains consisting of more than two-layers due to the changes of positions of the vacant octahedral sites in successive layers.

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Diffusion Coefficients for Electrons in SF6-Ar Gas Mixtures by MCS-BEq (MCSBEq에 의한 SF6-Ar혼합기체의 확산계수)

  • Kim, Sang-Nam
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.64 no.3
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    • pp.125-129
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    • 2015
  • Energy distribution function for electrons in SF6-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range 30~300[Td] by a two term Boltzmann equation and a Monte Carlo Simulation using a set of electron cross sections determined by other authors experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6-Ar$ mixtures were measured by time-of-flight(TOF) method, The results show that the deduced longitudinal diffusion coefficients and transverse diffusion coefficients agree reasonably well with theoretical for a rang of E/N values. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

The mean Energy in $SiH_4-Ar$ mixtures ($SiH_4-Ar$혼합기체의 평균에너지)

  • Kim, Sang-Nam
    • Proceedings of the KIEE Conference
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    • 2007.11c
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    • pp.155-159
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    • 2007
  • This paper calculates and gives the analysis of electron swarm transport coefficients as described electric conductive characteristics of pure Ar, pure $SiH_4$, $Ar-SiH_4$ mixture gases ($SiH_4$--0.5%, 2.5%, 5%) over the range of E/N =$0.01{\sim}300$[Td], P=0.1, 1, 5.0[Torr] by Monte Carlo the Backward prolongation method of the Boltzmann equation using computer simulation without using expensive equipment. The results have been obtained by using the electron collision cross sections by TOF, PT SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation.

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Energy Distribution Function in $SF_6-Ar$ Mixtures Gas used by Simulation (MCS-BEq 시뮬레이션에 의한 $SF_6-Ar$ 에너지 분포함수)

  • Kim, Sang-Nam
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2007.05a
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    • pp.193-196
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    • 2007
  • Energy distribution function for electrons in $SF_6-Ar$ mixtures gas used by Simulation has been analysed over the E/N range 30${\sim}$300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6-Ar$ mixtures were measured by time-of-flight (TOF) method. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

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The Influence of Electron Beam Irradiation due to Conductivity in the Low Density Polyethylene (저밀도 폴리에틸렌의 도전율에 미치는 전자선 조사의 영향)

  • 조경순;김이두;신현택;이수원;이종필;홍진웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.191-194
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    • 1998
  • In this paper, the physical and conductivity properties due to the electron beam irradiation for low density polyethylene using insulating materials of the distribution cable and ultra-high voltage cable are studied. The specimens of the low density polyethylene of thickness 100[$\mu\textrm{m}$] irradiated as each 1 [Mrad], 2[Mrad], 4[Mrad], 8[Mrad], 16[Mrad] and virgin are used in this experiment. In order to measure the conductivity properties, the micro electrometer is used, the range of temperature and app1ying voltage are 20 to 120[$^{\circ}C$], from 100 to 1000[V] respectively So. as a result of the conductivity properties, it is confirmed that the conductivity is increased nearly to 50[$^{\circ}C$], and is not changed until the crystalline melting point from the temperature over 60[$^{\circ}C$] because of the defects of morphology and the formation of many trap centers by means of electron beam irradiation

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Thermal Properties of Mn-doped LiNbO3 Crystals from Magneto-Optical Transitions

  • Park, Jung-Il
    • Journal of Magnetics
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    • v.17 no.4
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    • pp.255-260
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    • 2012
  • In this study, we determine that the electron paramagnetic resonance line-width (EPRLW) is axially symmetric about the c-axis and analyze the spin Hamiltonian with an isotopic g-factor of 1.9920 at a frequency of 9.5 GHz. It should be noted that the electron paramagnetic resonance signals are Lorentzian. Our findings show that the EPRLW decreases exponentially with an increase in the temperature; i.e., its temperature dependence in the range 300-400 K obeys Arrhenius behavior, this kind of temperature dependence indicates an off-center a motional narrowing of the spectrum when $Mn^{2+}$ impurity ions substitute for $Nb^{5+}$ ions. The specific heats follow a linear dependence suggesting a simple Debye $T^3$ behavior.