• 한국진공학회지
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• 제5권3호
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• pp.229-238
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• 1996

The electromigration phenomena and the characterizations of the conductor lifetime (Time-To-Failure, TTF) in Al-1%Si thin film interconnections under D.C. and Pulsed D.C. conditions were investigated . Meander type test patterns were fabricated with the dimensions of 21080$mu \textrm{m}$ length, 3$\mu\textrm{m}$ width, 0.7$\mu\textrm{m}$ thickness and the 0.1$\mu\textrm{m}$/0.8$\mu\textrm{m}$($SiO_2$/PSG)dielectric overlayer. The current densities of $2 \times10^6 A/\textrm{cm}^2$ and $1 \times10^7 A/\textrm{cm}^2$ were stressed in Al-1%Si thin film interconnection s under a D.C. condition. The peak current densities of $2 \times10^6 A/\textrm{cm}^2$ and $1 \times10^7 A/\textrm{cm}^2$ were also applied under a Pulsed D.C. condition at frequencies of 200KHz, 800KHz, 1MHz, and 4MHz with the duty factor of 0.5. THe time-to-failure under a Pulsed D.C.($TTF_{pulsed D.C}$) was appeared to be larger than that under a D.C. condition. It was found that the TTF under both a D.C. and a Pulsed D.C. condition. It was found that the TTF under both a D.C. and a Pulsed D.C. condition largely depends upon the appiled current densities respectively . This can be explained by a relaxation mechanism view due to a duty cycle under a Pulsed D.C. related to the wave on off. The relaxation phenomena during the pulsed off period result in the decayof excess vacancies generated in the Al-1%Si thin film interconnections because of the electrical and mechanical stress gradient . Hillocks and voids formed by an electromigration were observed by using a SEM (Scanning Electron Microscopy).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.125-128
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layer's thickness, morphology and interface with electrode. In this study, light-emitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-[1-1'-biphenyl]-4,4'-diamine).Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. And we used other buffer layer of PPy(Polypyrrole) with ITO/PPy/TPD/Alq$_3$/Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and at 225nm and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$ and at 350nm. We also studied EL spectrum in the cell structure of ITO/TPD/Alq$_3$/Al and ITO/PPy/TPD/Alq$_3$/Al and we observed the EL spectrum peak at 510nm from our cell

• Journal of Welding and Joining
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• 제33권3호
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• pp.25-31
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• 2015

Due to environmental regulations (RoHS, WEEE and ELV) of the European Union, electronics and automotive electronics have to eliminate toxic substance from electronic devices and system. Specifically, reliability issue of lead-free solder joint have an increasing demand for the car electronics caused by ELV banning. The authors prepared engine control unit and cabin electronics soldered with Sn-3.0Ag-0.5Cu (SAC305). To compare with the degradation characteristics of solder joint strength, thermal cycling test (TC), power-thermal cycling test (PTC) and series tests were conducted. Series tests were conducted for TC and PTC combined stress test using the same sample in sequence and continuously. TC test was performed at $-40{\sim}125^{\circ}C$ and soak time 10 min for 1000 cycles. PTC test was applied by pulse power and full function conditions during 100 cycles. Combined stress test was tested in accordance with automotive company standard. Solder joint degradation was observed by optical microscopy and environment scanning electron microscopy (ESEM). In addition, to compare with deterioration of bond strength of quad flat package (QFP) and chip components, we have measured lead pull and shear strength. Based on the series test results, consequently, we have validated of series test method for lifetime and reliability of Pb-free solder joint in automotive electronics.

• 상하수도학회지
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• 제32권4호
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• pp.349-355
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• 2018

This study interrogated multi-layer heterojunction anodes were interrogated for potential applications to water treatment. The multi-layer anodes with outer layers of $SnO_2/Bi_2O_3$ and/or $TiO_2/Bi_2O_3$ onto $IrO_2/Ta_2O_5$ electrodes were prepared by thermal decomposition and characterized in terms of reactive chlorine species (RCS) generation in 50 mM NaCl solutions. The $IrO_2/Ta_2O_5$ layer on Ti substrate (Anode 1) primarily served as an electron shuttle. The current efficiency (CE) and energy efficiency (EE) for RCS generation were significantly enhanced by the further coating of $SnO_2/Bi_2O_3$ (Anode 2) and $TiO_2/Bi_2O_3$ (Anode 3) layers onto the Anode 1, despite moderate losses in electrical conductivity and active surface area. The CE of the Anode 3 was found to show the highest RCS generation rate, whereas the multi-junction architecture (Anode 4, sequential coating of $IrO_2/Ta_2O_5$, $SnO_2/Bi_2O_3$, and $TiO_2/Bi_2O_3$) showed marginal improvement. The microscopic observations indicated that the outer $TiO_2/Bi_2O_3$ could form a crack-free layer by an incorporation of anatase $TiO_2$ particles, potentially increasing the service life of the anode. The results of this study are expected to broaden the usage of dimensionally stable anodes in water treatment with an enhanced RCS generation and lifetime.

• 한국인터넷방송통신학회논문지
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• 제14권5호
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• pp.215-221
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• 2014

본 논문에서는 RF 고전력 스트레스에 의한 SAW 디바이스의 신뢰성 분석을 위하여 향상된 내전력 시험시스템 및 시험방법을 제안하고 고장분석을 통해 고장메카니즘을 분석하였다. 광학현미경, SEM(Scanning Electron Microscope) 및 EDX(Energy Dispersive X-ray Spectro-scopy)장비를 이용하여 고장 분석한 결과, SAW 디바이스의 고장메카니즘은 고전류 밀도 및 고온 조건에서 줄열에 의한 Electromigration으로 분석하였다. Electromigration은 IDT전극에 void와 hillock을 생성하고, 그 결과로 전극이 단락과 단선되어 삽입손실이 증가하는 것이다. 제안된 내전력 시험시스템과 방법을 이용하여 450MHz CDMA용 SAW 필터의 가속수명시험을 수행하고, 아이링 모델과 와이블 분포를 이용하여 SAW 필터의 $B_{10}$수명은 98,500시간으로 추정하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.399-402
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layers thickness, morphology and interface with electrode. In this study, light-omitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl(1-1\`-biphenyl]-4,4'-diamine). Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. We also investigated stability of the devices using buffer layer with blend of PEI (Poly ether imide) and TPD by varying mot ratios between ITO and Alq$_3$. In current-voltage characteristics measurement, we obtained the turn-on voltage at about 6 V and observed an anomalous behavior at 3∼4 V. And we used other buffer layer of PEDT(3,4-pyrazino-3',4'-ethylenedithio-2,2',5,5'-tetrathiafulvalenium) with ITO/PEDT/TPD/Alq$_3$Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$. We also studied EL spectrum in the cell structure of ITO/(TPD+PEI)/Alq$_3$/Al.

• Nuclear Engineering and Technology
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• 제43권6호
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• pp.567-572
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• 2011

A sensitivity analysis of the methods used to evaluate the transport properties of a CdZnTe detector was performed using two different radiations (${\alpha}$ particle and gamma-ray) emitted from an $^{241}Am$ source. The mobility-lifetime products of the electron-hole pair in a planar CZT detector ($5{\times}5{\times}2\;mm^3$) were determined by fitting the peak position as a function of biased voltage data to the Hecht equation. To verify the accuracy of these products derived from ${\alpha}$ particles and low-energy gamma-rays, an energy spectrum considering the transport property of the CZT detector was simulated through a combination of the deposited energy and the charge collection efficiency at a specific position. It was found that the shaping time of the amplifier module significantly affects the determination of the (${\mu}{\tau}$) products; the ${\alpha}$ particle method was stabilized with an increase in the shaping time and was less sensitive to this change compared to when the gamma-ray method was used. In the case of the simulated energy spectrum with transport properties evaluated by the ${\alpha}$ particle method, the peak position and tail were slightly different from the measured result, whereas the energy spectrum derived from the low-energy gamma-ray was in good agreement with the experimental results. From these results, it was confirmed that low-energy gamma-rays are more useful when seeking to obtain the transport properties of carriers than ${\alpha}$ particles because the methods that use gamma-rays are less influenced by the surface condition of the CZT detector. Furthermore, the analysis system employed in this study, which was configured by a combination of Monte Carlo simulation and the Hecht model, is expected to be highly applicable to the study of the characteristics of CZT detectors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.380-380
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• 2010

Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.232-232
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• 2010

Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

• 실내환경 및 냄새 학회지
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• 제17권4호
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• pp.330-336
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• 2018

The objective of this study was to determine whether crops and fruits absorb the naturally occurring asbestos (NOA). The concentration of asbestos in various crops and fruits grown in NOA areas was analyzed and background levels of asbestos in ambient air and soil samples were assessed. Actinolite/Tremolite asbestos were detected in all soil samples. Among 21 ambient air samples, 2 samples were recorded to contain 0.0005 f/cc (fiber per cubic centimeter) but no asbestos was detected in the other samples using transmission electron microscopy (TEM). However, no evidence suggesting that the crops and fruits could be contaminated by NOA was found in this study. The excess lifetime cancer risks (ELCRs) of ABS scenarios (agricultural activities) used in this study were calculated by using the Arithmetic (AM) and Geometric mean (GM) of ELCRs. The AM and GM of ELCRs estimated from digging soil and weeding activities did not exceed $1{\times}10^{-4}$, which was defined as the general acceptable risk range for exposure. The results of this study would be informative to NOA managers and related policy makers to make plans to prevent unexpected exposure to asbestos to residents living in an NOA area.