• Polymer(Korea)
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• v.39 no.2
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• pp.353-358
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• 2015

Aqueous-based, environmentally friendly photocurrent generation has been highlighted to produce electricity by mimicking photosynthesis in nature. We fabricated a photocurrent generation system using a conjugated oligoelectrolyte (COE) assembled in lipid vesicles and a fluorescence dye, and investigated the fluorescence resonance energy transfer (FRET) between two species and the influence of FRET on the photocurrent generation. The FRET efficiency from the electron donor, COE, to the electron acceptor, the dye, increased with the dye concentrations, but the photocurrent increased and then decreased with the dye concentrations. We discussed about the role of FRET and electron shuttles over the variation of photocurrent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.111-114
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• 1999

Electroluminescence(EL) devices based on organic thin films have been attracted lots of interests in large-area light-emitting display. In this stuffy, an emissive layer was fabricated using Langmuir-Blodgett(LB) technique in organic light-emitting (OLEDs). This emissive organic material was synthesized and named PECCP[poly(3.6-N-2-ethylhexyl carbazolyl cyanoterephthalidene)] which has a strong electron donor group and an electron acceptor group in main chain repeated unit. This material has good solubility in common organic solvents such as chloroform. THF, etc, and has a good stability in air. The Langmuir-Blodgett(LB) technique has the advantage of precise control of the thickness down to the molecular scale, In particular, by varying the film thickness it is possible to investigate the metal/polymer interface. Optimum conditions for the LB film deposition are usually determined by investigating a relationship between a surface pressure $\pi$ and an effective are A occupied by one molecule on the subphase. The LB films were deposited on an indium-tin-oxide(ITO) glass at a surface pressure of 10 mN/m and dipping speed of 12 mm/min after spreading PECCP solution on distilled water surphase at room temperature, Cell structure was ITO/PECCP LB film/Alq$_3$/Al. We considered PECCP as a hole -transport layer inserted between the emissive layer and ITO. We also used Alq$_3$ as an emissive layer and an electron transport layer. We measured current-voltage(I-V) characteristics, UV/visible absorption, PL spectrum and EL spectrum of the OLEDs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.355-355
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• 2012

Si (111) 기판 위에 polystyrene (PS) bead를 사용하여 만들어진 약 100 nm 나노 구멍에 GaN나노선을 molecular beam epitaxy 법으로 성장하였다. 성장 온도와 III/V 비율 변화에 대하여 성장된 GaN 나노선의 모양과 광학적 특성은 scanning electron microscopy (SEM)와 photoluminescence (PL) 등으로 조사하였으며, InN/GaN 이종접합 및 InGaN p-n 다이오드구조를 성장하여 atomic force microscopy의 tip 접촉방법으로 전기적 특성을 조사하였다. PL 측정 결과 성장온도가 높아지면 Ga 빈자리와 관계된 3.28 eV의 donor acceptor pair (DAP) 신호와 3.42 eV의 stacking faults (SF) 결함에 기인된 발광 신호세기가 감소하는 결과를 SEM으로부터 나노선 폭 및 길이는 좁아지면서 짧아지는 것을 관측하였다. 또한 nitrogen 원자양이 증가하면서 Ga 빈자리와 관련된 3.28 eV DAP 신호가 증가하는 것을 관측하였다. 이들 결과로부터 GaN 나노선의 SF 발광 신호관련 원인에 대하여 논의 하였다. AFM을 이용한 I-V 측정으로부터 성장조건 변화에 따른 GaN 나노선 및 p-n 접합 나노선의 전도 특성을 조사하여 나노선의 소자 응용에 대한 기본적인 물리특성을 규명하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1573-1576
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• 2007

ABCV-Py, a new red fluorescent material, in which two identical electron donor (dimethylamino group) and acceptor (cyano group) moieties are linked to two independent biphenyl groups which share the same core phenyl, has been synthesized for use in OLED application. Performance of red doped electroluminescent devices using ABCV-Py as dopant were measured with various host materials, $Alq_3$, CBP, DPVBi, and p-terphenyl. The performance of device with DPVBi host material was better than those with other host materials and high doping concentration could be applied on device with ABCV-Py as dopant.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.397-399
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• 2012

Dye-sensitized solar cells (DSSCs) have received considerable attention as the most promising candidates for renewable energy systems in recent years. Among these, organic dyes which have many advantages such as large absorption coefficients, customized molecular design for desired photophysical and photochemical properties, inexpensiveness and environment-friendliness, are suitable as photosensitizers for DSSCs. We have studied on the design and synthesis of two organic dyes (BECZ 1 and BECZ 2) with a 9-ethyl-9H-carbazole core for dye-sensitized solar cells (DSSCs). Two organic dyes comprised of two 9-ethyl-9H-carbazole moiety as electron-donor, two types of cyanoacrylic acid moiety acting as acceptor. In addition, n-ethyl unit introduced for increasing the solubility and the donating power. The obtained organic dyes were comprehensively characterized by NMR, GC-MS, FAB-MS and UV/Vis spectroscopies. DSSCs sensitized by the dyes BECZ1 and BECZ2 produced ${\eta}$ value 3.31% and a ${\eta}$ value 3.21%.

• Journal of the Korean Ceramic Society
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• v.25 no.6
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• pp.571-576
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• 1988

The microstructure and electrical properties of 0.02Pb[Cd1/2W1/2)O3-0.505PbZrO3-0.475PbTiO3 with MnO2 addition have been investigated. The amount of MnO2 addition was 0, 0.2, 0.4, 0.6, 0.8, 1wt%, respectively. When MnO2 is added up to 0.2wt%, Mn3+ which is substituted for Ti4+ site make hole and act as a acceptor. When MnO2 is added over 0.2wt% Mn3+ which is substituted for Cd2+ site create electron and act as a donor. The variation of grain size show that it was rapidly increased by 0.4wt% addition of MnO2, and while that in the range of over 0.6wt% addition of MnO2 it was decreased. The solid solution range of MnO2 that assumed in this composition according to the variations of microstructure and electrical properties was 0.4-0.6wt%.

• Transactions on Electrical and Electronic Materials
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• v.9 no.2
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• pp.67-72
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• 2008

Al-doped p-type ZnO thin films were fabricated by RF magnetron sputtering on n-Si (100) and homo-buffer layers in pure oxygen ambient. ZnO ceramic mixed with 2 wt% $Al_2O_3$ was selected as a sputtering target. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are arranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-2}$, mobilities from 0.194 to $198\;cm^2V{-1}s^{-1}$ and resistivities from 0.0963 to $18.4\;{\Omega}cm$. FESEM cross section images of different parts of a p-type ZnO:Al thin film annealed at $800^{\circ}C$ show a compact structure. Measurement for same sample shows that density is $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. Photoluminescence (PL) spectra at 10 K show a shoulder peak of p-type ZnO film at about 3.117 eV which is ascribed to electron transition from donor level to acceptor level (DAP).

• Environmental Engineering Research
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• v.10 no.6
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• pp.283-293
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• 2005

Characteristics of sulfur-based autotrophic denitrification in a semi-continuous type reactor and the kinetic parameters were studied. Enriched autotrophic denitrifying culture was used for the reactor operation. Biomass growth on sulfur particles and in the liquid medium was monitored using the DAPI staining method. From the result of ion concentration changes and the biomass growth, maximum specific growth rate, ${\mu}_{max}$, and the half velocity constant, $K_M$, were estimated as $0.61\;d^{-1}$ and 3.66 mg/L, respectively. Growth yield coefficient, Y values for electron acceptor and donor were found as 0.49 gVSS/g N and 0.16 gVSS/g S. The biomass showed specific denitrification rate, ranging 0.86-1.13 gN/g VSS-d. A half-order equation was found to best simulate the denitrification process in the packed bed reactor operated in the semi-continuous mode.

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2010.03a
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• pp.49-50
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• 2010

The near-infrared absorbing donor-acceptor chromophores have been investigated by varying the electron donating and accepting molecular moiety. A series of near-infrared absorbing chromophores were offered narrow and intense absorption band in a various organic solvents. The dyes synthesised were, however, strongly bathochromic shift which extended well into the near-infrared region. The functional uses of dyes are vast in number, and it is convenient to classify them in some way. In all cases, it is the $\Pi$-chromophore that plays a major role in the functional application. "Light absorption" is of course the most commonly used property of a dye chromophore, and it can be employed directly, e.g. in light filters and optical data recording, or it can be used to drive further functional processes, e.g. fluorescence, photochromism, photosensitization.

• Korean Journal of Crystallography
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• v.11 no.4
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• pp.212-223
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• 2000

A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.