• 한국세라믹학회지
• /
• 제46권3호
• /
• pp.242-248
• /
• 2009

Forsterite is a crystalline magnesium silicate with chemical formula $Mg_2SiO_4$, which has extremely low electrical conductivity that makes it an ideal substrate material for electronics. In this study, forsterite precursors were synthesized with magnesium silicate gels from the mixture of magnesium nitrate solution and various sodium silicate solution by the geopolymer technique. Precursors and heattreated powders were characterized by thermogravimetrical differential thermal analyzer(TG-DTA), X-ray diffractometer(XRD), scanning electron microscopy(SEM), Si magic angle spinning nuclear magnetic resonance(MAS-NMR), transmission electron microscopy(TEM). As the result of analysis about the crystallization behavior by DTA, the synthesized precursors were crystallized in the temperature range of $700^{\circ}C$ to $900^{\circ}C$. The XRD results showed that the gel composition began to crystallize at various temperature. Also, it was found that the sodium orthosilicate based precursors(named as 'FO') began to crystallize at above $550^{\circ}C$. The FO peaks were much stronger than sodium silicate solution based precursors(named as 'FW'), sodium metasilicate based precursors(named as 'FM') at $800^{\circ}C$. TEM investigation revealed that the 100nm particle sized sample was obtained from FO by heating up to $800^{\circ}C$.

• 대한화학회지
• /
• 제23권5호
• /
• pp.277-285
• /
• 1979

비선형 Hammett 관계를 고찰하기 위해서 $XC_6H_4CH_2Cl\;(X=H,\;p=CH_3,\;p-NH_2,\;p-NO_2)$와 benzyl radical, cation, anion에 대해서 CNDO/2 계산을 행하였다. 이로부터 얻은 주요 결론은 다음과 같다. 1. 염화벤질은 C-Cl 결합과 고리의 $\pi$-system 간의 ${\sigma}-{\pi}$ conjugation으로 기인되는 borderline 성질을 나타내고 있다. 2. Mutual conjugation의 정도는 $\pi$-charge와 bond alternation, 그리고 interfrontier level separation narrowing 효과로 확인된다. 3. 전자공여 파라치환체는 벤질탄소의 HOMO AO 계수를 감소시키는 반면, 전자흡인 파라치환체는 벤질탄소의 LUMO AO 계수를 감소시킨다.

• 한국재료학회지
• /
• 제24권11호
• /
• pp.604-609
• /
• 2014

The thermoelectric power and dc conductivity of $La_{2/3+x}TiO_{3-{\delta}}$ (x = 0, 0.13) were investigated. The thermoelectric power was negative between 80K and 300K. The measured thermoelectric power of x = 0.13 increased linearly with increased temperatures and was represented by $S_0+BT$. The x = 0 sample exhibited insulating behavior, while the x = 0.13 sample showed metallic behavior. The electric resistivity of x = 0.13 had a linear temperature dependence at high temperatures and a T3/2 dependence below about 100K. On the other hand, the electric resistivity of x = 0 has a linear relation between $ln{\rho}/T$ and 1/T in the range of 200 to 300K, and the activation energy for small polaron hopping was 0.23 eV. The temperature dependence of thermoelectric power and the resistivity of x = 0 suggests that the charge carriers responsible for conduction are strongly localized. This temperature dependence indicates that the charge carrier (x = 0) is an adiabatic small polaron. These experimental results are interpreted in terms of spin (x = 0.13) and small polaron (x = 0) hopping of almost localized Ti 3d electrons.

• 열처리공학회지
• /
• 제7권4호
• /
• pp.307-317
• /
• 1994

The surf ace microstructure modification by $N^+$ ion implantation into 7050Al alloy and its low cycle fatigue behavior were investigated. Ion implantation method is to physically implant accelerated ions to the surface of a substrate. High dose of nitrogen($5{\times}10^{17}ions/cm^2$) were implanted into 7050Al alloy using current density of accellerating voltage of 100KeV. The implanted layers were characterized by Electron Probe-Micro Analysis(EPMA), Auger Elecron Spectroscopy(AES), X-Ray Diffraction(XRD), X-Ray Photoelectron Spectroscopy(XPS), and Transmission Electron Microscopy(TEM). The experimental results were compared with computer simulation data. It was shown that AlN was formed to 4500 ${\AA}$ deep. The low cycle fatigue life of the $N^4$ion modified material was prolonged by about three times the unimplanted one. The improved low cycle fatigue life was attributed to the formation of AlN and the damaged region on the surface by $N^+$ ion implantation.

• 한국분말재료학회지
• /
• 제4권4호
• /
• pp.298-303
• /
• 1997

The activated sintering behavior of $MoSi_2$ powder compacts with addition of 0.5 and 1.0 wt.%Ni during the sintering under As atmosphere was studied. The shrinkage was measured and the microstructures were observed by SEM (scanning electron microscopy) and BEI (backscattered electron image) along with the phase analysis by EDS during heating up to 155$0^{\circ}C$ and holding for various time at 155$0^{\circ}C$. The most of shrinkage occurred upon heating and 92% of theoretical density was attained after sintering for 1 hr at 155$0^{\circ}C$. However, little shrinkage ensued even for prolonged sintering over 1 hr at 155$0^{\circ}C$. A liquid film formed at about 135$0^{\circ}C$ along necks and grain boundaries. The polyhedral grain structure composed of $(Mo,Ni)_5Si_3$and $Ni_2Si$ across the $MoSi_2$ grain boundary developed at 155$0^{\circ}C$. It was concluded that the activated sintering of $MoSi_2$ powder by Ni led to the diffusion of Si into Ni decreasing the liquidus temperature and the enhanced diffusion of Mo and Si through such a liquid phase and/or interboundary of $(Mo,Ni)_5Si_3$.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.164.2-164.2
• /
• 2014

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of $329.7{\pm}16.9cm^2/V{\cdot}s$, and a high on-off ratio of $10^5$. The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs.

• 한국재료학회지
• /
• 제25권11호
• /
• pp.612-615
• /
• 2015

In this work, on-site corrosion behavior of heat resistant tubes of T91, used as components of a superheater in a power plant for up to 25,762 h, has been investigated using scanning electron microscopy(SEM), energy dispersive X-ray spectroscopy (EDS), and electron backscattered diffraction(EBSD), with the objectives of studying the composition, phase distribution, and evolution during service. A multi-layer structure of oxide scale was found on both the steamside and the fireside of the tube surface; the phase distribution was in the order of hematite/magnetite/spinel from the outer to the inner matrix on the steamside, and in the order of slag/magnetite/spinel from the outer to the inner matrix on the fireside. The magnetite layer was found to be rich in pores and cracks. The absence of a hematite layer on the fireside was considered to be due to the low oxygen partial pressure in the corrosion environment. The thicknesses of the hematite and of the slag-deposit layer were found to exhibit no significant change with the increase of the service time.

• 한국주조공학회지
• /
• 제19권1호
• /
• pp.38-46
• /
• 1999

Microstructural characteristics and strengthening behavior in Mg-5wt%Zn-0.6wtZr alloys have been investigated by a combination of optical, secondary electron and transmission electron microscopy, differential thermal analysis, and hardness and tensile, creep property measurements. The result have been compared with those of Mg-5wt%Zn alloys. The as-squeeze cast microstructure consisted of dendrite ${\alpha}-Mg$, interdendrite or intergranular $Mg_7Zn_3$ and fine dispersoids of $ZnZr_2$. The size of secondary solidification phases in Mg-5wt%Zn-0.6wtZr alloys was significantly smaller than that of the Mg-5wt%Zn alloys due to the existence of fine dispersoid of $ZnZr_2$ which also effected the refinement of grain size. TEM study showed that the main cause of age hardening is formation of fine rodlike ${\beta}_1\;'$ precipitates as well as fine $ZnZr_2$ dispersoids. Due to the observed microstructural characteristics mechanical propeties of Mg-5wt%Zn-0.6wtZr alloys was found to be superior to those of Mg-5wt%Zn alloys.

• Bulletin of the Korean Chemical Society
• /
• 제31권10호
• /
• pp.2967-2972
• /
• 2010

Poly-N-vinylcarbazole/polyaniline (PVK-PANI) composites are synthesized by varying target loading concentrations of aniline (0.025 - 0.1 M). The surface morphology of the composites is studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The temperature-dependent DC conductivity of PVK-PANI composite films was studied at the temperature range of 300 - 500 K. The data suggest that the conductivity increase with an increase in aniline concentration in the composite with an increase in temperature. Further based on the conductivity behavior we can suggest that the PVK-PANI composites show a semiconducting behavior with a positive temperature coefficient of resistivity (TCR). The enhanced conductivity and the positive TCR of the PVK-PANI composite films may be due to the strong interaction between PANI and PVK in the composite films.

• Bulletin of the Korean Chemical Society
• /
• 제34권1호
• /
• pp.99-106
• /
• 2013

Polyaniline-yttrium trioxide (PAni-$Y_2O_3$) composites were synthesized by the in-situ polymerization of aniline in the presence of $Y_2O_3$ The composite formation and structural changes in these composites were investigated by X-ray diffraction (XRD), Fourier transform infra red spectroscopy (FTIR), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The direct current (DC) electrical conductivity of the order of $0.51{\times}10^{-2}\;S\;cm^{-1}-0.283\;S\;cm^{-1}$ in the temperature range 300 K-473 K indicates semiconducting behavior of the composites. Room temperature AC conductivity and dielectric response of the composites were studied in the frequency range of 10 Hz to 1 MHz. The variation of AC conductivity with frequency obeyed the power law, which decreased with increasing weight percentage (wt %) of $Y_2O_3$. Studies on dielectric properties shows the relaxation contribution coupled by electrode polarization effect. The dielectric constant and dielectric loss in these composites depend on the content of $Y_2O_3$ with a percolation threshold at 20 wt % of $Y_2O_3$ in PAni. Electromagnetic interference shielding effectiveness (EMI SE) of the composites in the frequency range 100 Hz to 2 GHz was in the practically useful range of -12.2 dB to -17.2 dB. The observed electrical and shielding properties were attributed to the interaction of $Y_2O_3$ particles with the PAni molecular chains.