• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.77-78
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• 2006

We fabricated photonic crystals on GaAs and GaN substrates. After anodizing the aluminium thin film in electrochemical embient, the porous alumina was implemented to the mask for reactive ion beam etching process of GaAs wafer. And photonic crystals in GaN wafer were also fabricated using electron beam nano-lithography process. The coated PMMA thin film with 200 nm-thickness on GaN surface was patterned with triangular lattice and etched out the GaN surface by the inductively coupled plasma source. The fabricated GaAs and GaN photonic crystals provide the enhanced intensities of light emission for the wavelengths of 858 and 450 nm, respectively. We will present the detailed dimensions of photonic crystals from SEM and AFM measurements.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.189-192
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• 2001

We have studied fabrication processes that form asymmetric $\Gamma$-gate with a 0.1${\mu}{\textrm}{m}$ gate length in MMIC's(Monolithic Microwave Integrated Circuits). Asymmetric $\Gamma$-gate was fabricated using mixture of PMMA and MCB. Thus pseudomorphic high electron mobility transistor (PHEMT's) with 0.1${\mu}{\textrm}{m}$ gate length was fabricated via several steps such as mesa isolation, metalization, recess, passivation. PHEMT's has the -1.75 V of pinch-off voltage (Vp), 63 mA of drain saturation current(Idss and 363.6 mS/mm of maximum transconductance (Gm) in DC characteristics and current gain cut-off frequency of 106 GHz and maximum frequency of oscillation of 160 GHz in RF characteristics.

• Journal of Electrical Engineering and Technology
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• 제3권2호
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• pp.276-279
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• 2008

We report on the enhancement of cathode-luminescence in an $In_xGa_{1-x}N/In_yGa_{1-y}$ green light emitting diode structure using two-dimensional photonic crystals. The square lattice arrays of photonic crystals with diameter/periodicity of 200/500 nm were fabricated by electron beam lithography. Inductively coupled plasma dry etching was used to etch and define photonic crystals. Three samples with different etch depths, i.e., 170, 95, and 65 nm, were constructed. Field emission scanning electron microscope analysis shows that air holes of photonic crystal structure with inverted-cone shapes were fabricated after dry etching. Cathode-luminescence measurement indicated that up to 30-fold enhancement of cathode-luminescence intensity has been achieved.

• 한국산학기술학회논문지
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• 제5권3호
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• pp.197-203
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• 2004

나노미터 크기의 임의형상 패턴을 새기기 위하여 노광기술이 사용된다. 광노광에서 자외선과 엑스레이 같은 전자기파가 나노미터 크기로 형상을 새긴 마스크 위에 조사되면 회절현상은 필연적으로 발생하며 마스크의 상이 불명확하게 웨이퍼 위에 맺히도록 한다. 볼록렌즈만이 프리어변환기 역할을 한다고 알려져 있으며 마스크 위에 패턴의 크기가 전자기파의 파장에 비교하여 매우 클 때에도 볼록렌즈를 사용하면 프리어변환시키는 것이 가능하다. 본 논문에서 설명하는 방법으로 마스크를 준비하여 렌즈 앞에 놓고 레이저 빔으로 조사하면 프리어 평면이라 알려진 평면 위에서만 나노미터 크기의 패턴이 형성된다. 이 방법은 매우 단순한 장치로 구성되어 있고, 현재 혹은 차세대 노광인 자외선/극자외선 및 전자투사노광으로 제작한 최소선폭과 비교해 볼 때 손색이 없다. 여기서는 프리어광학을 이용하여 이론적인 연구결과를 보이고 있지만 가까운 장래에 실험결과로 이론적인 접근을 증명할 수 있을 것이다.

• 대한전자공학회논문지
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• 제26권2호
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• pp.112-117
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• 1989

본 논문은 패턴의 모양에 따라서 패턴 데이타 포멥변환시 분할되는 각종 矩形패턴을 크기에 구애됨이 없이 전자선 직접묘사 시간이 일정한 矩形단위로 전자선 직접묘사하는 방법을 제안하였다. 본 실험에서는 SEM을 사용하였으며 矩形의 크기에 따라 일정시간에 요구되는 전자선 전류를 변화시키기 위하여 집속렌즈의 공급전류를 BITMAP-IV CAD 시스템으로 제어하였다. 본방법에서는 패턴 데이타 포맵변환시 밀집된 패턴에 대한 resizing과정이 불필요하며 묘사시간에 근거한 through-put은 unit scan방식에 비하여 172배가 향상되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.17-18
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• 2005

실리콘 기판 위에 100nm의 선폭을 갖는 선들이 일정한 간격을 가지고 연속적으로 배열되어 있는 구조를 형성시켜 보았다. PMMA가 코팅되어 있는 실리콘 기판위에 전자빔으로 패턴을 하였고, 건식에칭을 통해 구조물을 형성한 후 원자 현미경으로 관찰하였다. 이러한 나노구조물의 구현은 전자빔 패터닝시에 전자빔이 실리콘 기판에 충돌할 때 나타나는 backward scattering과 proximity 효과 등의 영향으로 인해 pitch의 크기가 작아질수록 구현하기가 쉽지 않았다. 화합물반도체 단일 나노선 소자를 제작하여 소자의 전기적 특성을 측정할 때, 나노선 표면에 있는 자연산화막은 금속전극과 나노선 사이의 전기전도특성을 저해하는 요소로 알려져 있다. 이러한 자연산화막을 제거하기 위해 나노선을 건식에칭해 보았고, 원자현미경을 통해 에칭에 따른 나노선의 모양변화를 관찰하였다.

• ETRI Journal
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• 제34권6호
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• pp.950-953
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• 2012

Schottky barrier single electron transistors (SB-SETs) and Schottky barrier single hole transistors (SB-SHTs) are fabricated on a 20-nm thin silicon-on-insulator substrate incorporating e-beam lithography and a conventional CMOS process technique. Erbium- and platinum-silicide are used as the source and drain material for the SB-SET and SB-SHT, respectively. The manufactured SB-SET and SB-SHT show typical transistor behavior at room temperature with a high drive current of $550{\mu}A/{\mu}m$ and $-376{\mu}A/{\mu}m$, respectively. At 7 K, these devices show SET and SHT characteristics. For the SB-SHT case, the oscillation period is 0.22 V, and the estimated quantum dot size is 16.8 nm. The transconductance is $0.05{\mu}S$ and $1.2{\mu}S$ for the SB-SET and SB-SHT, respectively. In the SB-SET and SB-SHT, a high transconductance can be easily achieved as the silicided electrode eliminates a parasitic resistance. Moreover, the SB-SET and SB-SHT can be operated as a conventional field-effect transistor (FET) and SET/SHT depending on the bias conditions, which is very promising for SET/FET hybrid applications. This work is the first report on the successful operations of SET/SHT in Schottky barrier devices.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2003년도 추계학술대회논문집
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• pp.367-370
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• 2003

In this study, application of SAM (self-assembled monolayer) to nano replication process as an anti-adhesion layer was presented to reduce the surface energy between the nano mold and the replicated polymeric nano patterns. The electron beam lithography was used for master nano patterns and the electorforming process was used to fabricate the nickel nano stamper. Alkanethiol SAM as an anti-adhesion layer was deposited on metallic nano stamper using solution deposition method. To analyze wettability and adhesion force of SAM, contact angle and LFM (Lateral Force Microscopy) were measured at the actual processing temperature and pressure for the case of nano compression molding and at the actual UV dose for the case of nano UV molding. It was found that the surface energy due to SAM deposition on the nickel nano stamper markedly decreased and the quality of SAM on the nickel stamper maintained under the actual molding environments.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 1998년도 춘계학술대회논문집; 용평리조트 타워콘도, 21-22 May 1998
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• pp.302-307
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• 1998

In the production of semiconductor wafer, optical and electron microscopes, ion-beam, laser device must maintain their alignments within a sub-micrometer. This equipment requires a vibration free environment to provide its proper function. Especially, lithography and inspection devices, which have sub-nanometer class high accuracy and resolution, have come to necessity for producing more improved giga and tera class semiconductor wafers. This high technology equipments require very strict environmental vibration standard, vibration criteria, in proportion to the accuracy of the manufacturing, inspecting devices. The vibration criteria of high sensitive equipment should be represented in the form of exactness and accuracy, because this is used as basic data for the design of building structure and structural dynamics of equipment. The study on the evaluation of the factors affecting the permissible vibration criteria is required to design the efficient isolation system of the semiconductor manufacturing of equipment. This paper deals with the properties of the effected factor for vibration criteria of high sensitive equipment.

• Transactions on Electrical and Electronic Materials
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• 제4권4호
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• pp.26-29
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• 2003

To discover electrical properties of individual single wall nanotube(SWNT), a number of SWNT-based tubeFETs have been fabricated. The device consists of a single semiconducting SWNT on an insulating substrate, contacted at each end by metal electrodes. It presents high transconductances, and charge storage phenomenon, which is the operations of injecting electrons from the nanotube channel of a tubeFET into charge traps on the surface of the $SiO_2$ gate dielectric, thus shifting the threshold voltage. This phenomenon can be repeated many times, and maintained for the hundreds of seconds at room temperature. We will report this phenomenon as the memory effects of the SWNT, and attempt to use this property for the memory device.