• Publications of The Korean Astronomical Society
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• v.15 no.spc2
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• pp.37-44
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• 2000

Two different types of plasma probes have been developed and are currently in operation on board the KOMPSAT-l. One is the cylindrical Langmuir Probe (LP) that measures the electron density and temperature from its current-voltage characteristics in thermal plasmas, and the other is the Electron Temperature Sensor (ETS) which directly gives the information of the ambient electron temperatures. These plasma probes provide the electron properties of the local nighttime ionosphere at the KOMPSAT-l altitudes. In this paper we briefly describe the probes and the initial results obtained from these probes since the beginning of their normal operation in April, 2000.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.31-35
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• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.50-54
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• 2006

The study on discharge of the flat lamp lighting source has been requested increasingly. To improve the brightness, life time and efficiency of flat lamp, the plasma diagnosis of flat lamp lighting source is very important. When a distance of discharge electrode is 5.5mm and width is 16.5mm, we measured electron temperature and electron density with single Langmuir probe in flat lamp. Pressure conditions to test the plasma discharge from 100 Torr to 300 Torr. The power supply was PDS-4000 with frequency 20kHz and duty ratio $20\%.$ Form these experimental results, electron temperature was decreased according to increase the gas pressure and the voltage while electron density was increased.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.150-152
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• 2004

In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. The electrodeless fluorescent lamp is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. In this paper, electron temperature and electron density were measured in a radio-frequency inductively coupled plasma using a Langmuir probe method for emission characteristics. Measurement was conducted in an Ne discharge for pressure from 10 [mTorr] and input RF power 100 [W] to 150 [W]. As for the electron density, a electron temperature was more distinguished for a emission characteristic. The results of ideal may contribute to systematic understanding of a electrodeless fluorescent lamps of emission characteristics.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.167-170
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• 2004

In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. The electrodeless fluorescent lamp is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. In this paper, electron temperature and electron density were measured in a radio-frequency inductively coupled plasma using a Langmuir probe method for emission characteristics. Measurement was conducted in an Argon, Ne discharge for pressure from 1 [mTorr] and input RF power 10 [W] to 150 [W]. As for the electron density, a electron temperature was more distinguished for a emission characteristic. The results of ideal may contribute to systematic understanding of a electrodeless fluorescent lamps of emission characteristics.

• Applied Microscopy
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• v.45 no.2
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• pp.89-94
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• 2015

This article briefly reviews the results of recently reported research on high-temperature Pb-free solder alloys and the research trend for characterization of the interfacial reaction layer. To improve the product reliability of high-temperature Pb-free solder alloys, thorough research is necessary not only to enhance the alloy properties but also to characterize and understand the interfacial reaction occurring during and after the bonding process. Transmission electron microscopy analysis is expected to play an important role in the development of high-temperature solders by providing accurate and reliable data with a high spatial resolution and facilitating understanding of the interfacial reaction at the solder joint.

• Laser Solutions
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• v.11 no.4
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• pp.13-20
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• 2008

The damage threshold measurement of gold films is carried out with ultrashort-pulse laser. An enhanced two temperature model is developed to encounter the limitation of linear modeling during ultrashort pulse laser ablation. In which the electron heat capacity is calculated using a quantum mechanical approach based on a Fermi-Dirac distribution, temperature-dependent electron thermal conductivity valid beyond the Fermi temperature is adopted, and reflectivity and absorption coefficient are estimated by applying a temperature-dependent electron relaxation time. The predicted damage threshold using the proposed enhanced modelclosely agreed with experimental results, demonstrating the importance of considering transient thermal and optical properties in the modeling of ultrashort pulse laser ablation.

• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1657-1659
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• 1997

Electron temperature and electron density were measured in a radio-frequency inductively coupled plasma (RFICP) using a probe measurements. Measurement was conducted in an argon discharge for pressures from 10 [mTorr] to 40 [mTorr] and input rf power from 100 [W] to 800 [W], Ar flow rate from 5 [sccm] to 30 [sccm], Spatial distribution electron temperature and electron density were measured for discharge with same aspect ratio (R/L=2). Electron temperature and electron density were discovered depending on both pressure and power, Ar flow rate. Electron density was increased with increasing input power and in creasing pressure, increasing Ar flow rate. Radial distribution of the electron density was peaked in the plasma center. Normal distribution of the electron density was peaked in the center between quartz plate and substrate. From these results, We found out the generation mechanism of Radio-Frequency Inductively Coupled Plasma.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.7
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• pp.1211-1217
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• 2016

Discharge characteristics of inductively coupled plasma were investigated by using electrostatic probe and fluid simulation. The Inductively Coupled Plasma source driven by 13.56 Mhz was prepared. The signal attenuation ratios of the electrostatic probe at first and second harmonic frequency was tuned in 13.56Mhz and 27.12Mhz respectively. Electron temperature, electron density, plasma potential, electron energy distribution function and electron energy probability function were investigated by using the electrostatic probe. Experiment results were compared with the fluid simulation results. Ar plasma fluid simulations including Navier-Stokes equations were calculated under the same experiment conditions, and the dependencies of plasma parameters on process parameters were well agreed with simulation results. Because of the reason that the more collision happens in high pressure condition, plasma potential and electron temperature got lower as the pressure was higher and the input power was higher, but Electron density was higher under the same condition. Due to the same reason, the electron energy distribution was widening as the pressure was lower. And the electron density was higher, as close to the gas inlet place. It was found that gas flow field significantly affect to spatial distribution of electron density and temperature.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1803-1805
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• 1998

Electron temperature, electron density and electron energy distribution function were measured in Radio-Frequency Inductively Coupled Plasma(RFICP) using a probe method. Measurements were conducted in argon discharge for pressure from 10 mTorr to 40 mTorr and input rf power from 100W to 600W and flow rate from 3 sccm to 12 sccm. Spatial distribution electron temperature and electron density and electron energy distribution function were measured for discharge with same aspect ratio(R/L=2). Electron temperature was found to depend on pressure, but only weakly on power. Electron density and electron energy distribution function strongly depended on both pressure and power. Electron density and electron energy distribution function increased with increasing flow rate. Radial distribution of the electron density and electron energy distribution function were peaked in the plasma center. Normal distribution of the electron density electron energy distribution function were peaked in the center between quartz plate and substrate. These results were compared to a simple model of ICP, then we found out the generation mechanism of Radio-Frequency Inductively Coupled Plasma.