• Title/Summary/Keyword: Electron Probe

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Dry Etch Process Development for TFT-LCD Fabrication Using an Atmospheric Dielectric Barrier Discharge

  • Choi, Shin-Il;Kim, Sang-Gab;Choi, Seung-Ha;Kim, Shi-Yul;Kim, Sang-Soo;Lee, Seung-Hun;Kwon, Ho-Cheol;Kim, Gon-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1272-1275
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    • 2008
  • We present the development of dry etch process for the liquid crystal display (LCD) fabrication using a dielectric barrier discharge (DBD) system at atmospheric pressure. In this experimental work, the dry etch characteristics and the electrical properties of thin film transistor are evaluated by using the scanning electron microscopy and electric probe, and TFT-LCD panel ($300\;mm\;{\times}\;400\;mm$) is manufactured with the application of the amorphous silicon etch step in the 4 mask and 5 mask processes.

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Property of gallium doped Zinc Oxide thin film deposited with various substrate temperatures using D.C. magnetron sputtering

  • Kim, Se-Hyun;Moon, Yeon-Geon;Moon, Dae-Yong;Park, Jong-Wan;Jeong, Chang-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1351-1354
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    • 2006
  • In this paper, we study the effect of substrate temperature on property of Ga doped ZnO (GZO) thin film for transparent conductive oxide (TCO).GZO thin films have been deposited on corning glass 1737 by D.C. magnetron sputtering. We investigated the structural and electrical properties of GZO films using the X-Ray Diffractometer(XRD), Field Emission Scanning Electron Microscopy(FESEM) and 4-points probe .

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Nondestructive measurement of sheet resistance of indium tin oxide(ITO) thin films by using a near-field scanning microwave microscope (근접장 마이크로파 현미경을 이용한 ITO 박막 면저항의 비파괴 관측 특성 연구)

  • Yun, Soon-Il;Na, Sung-Wuk;Yun, Young-Wun;You, Hyun-Jun;Lee, Yeong-Joo;Kim, Hyun-Jung;Lee, Kie-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.522-525
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    • 2004
  • ITO thin films $({\sim}150\;nm)$ are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AFM). The sheet resistance of ITO thin films compared $s_{11}$ values by using a near field scanning microwave microscope.

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Surface Potential Properties of CuPc/Au Interface with Varying Temperature (CuPc/Au 계면에서의 온도 변화에 따른 표면전위 특성)

  • Lee, Ho-Shik;Park, Yong-Pil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.10
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    • pp.934-937
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    • 2008
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. So we need the effect of the substituent group attached to the phthalocyanine on the surface potential was investigated by Kelvin probe method with varying temperature of the substrate. We were obtained the positive shift of the surface potential for CuPc thin film. We observed the electron displacement at the interface between Au electrode and CuPc layer and we were confirmed by the surface potential measurement.

A Study on the Propensities of Helicon Plasma and Application for Etching (헬리콘 플라즈마 물성특성 및 식각응용에 관한 연구)

  • Lee, Byoung-Ill;Do, Hyun-Ho;Yang, Ill-Dong;Whang, Ki-Woong
    • Proceedings of the KIEE Conference
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    • 1993.11a
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    • pp.264-267
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    • 1993
  • A high plasma density of $10^{12}cm^{-3}$ can be produced at the pressure of few mTorr with R. F input power of 300-400W. A radially uniform plasma to a radius of 7cm at the substrate was produced at the pressure of 1 mTorr. The electron density and temperature were confirmed with double Langmuir probe, $\mu$-wave interferometer. It has bee found that the dispersion relation N/B=constant not be applied at the low R.F input power(<600W) but can be applied at high R.F input power(>600W).

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A Case Study on Visualization and Quantification for Microstructure of Polymer-Modified Cement Waterproofing Membrane (세공구조 화상분석 및 수치해석에 의한 폴리머시멘트의 수화반응 및 막형성 프로세스 고찰)

  • Miyauchi, Hiroyuki;Kim, Gyu-Yong;Lee, Eui-Bae;Nam, Jeong-Soo;Koo, Kyung-Mo;Lee, Tae-Gyu
    • Proceedings of the Korea Concrete Institute Conference
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    • 2010.05a
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    • pp.353-354
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    • 2010
  • The relation between polymer and cement in a polymer-modified cement waterproofing membrane was investigated by using an electron probe micro-analyzer and numerical simulation.

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Structural and Electrical Properties of Reactively Sputtered Titanium Nitride Films (DC 반응성 스퍼터링된 TiN 박막의 구조적 및 전기적 특성)

  • 류성용;오원욱;백수현;신두식;오재응;김영남;심태언;이종길
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.8
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    • pp.49-55
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    • 1992
  • We Have investigated the properties of the titanium nitrite films widely used in VLSI devices as diffusion barrier in Al-based metallization. TiN films were formed by reactive sputtering from Ti target in Ar-N$_2$ mixtures, varying deposition parameters such as N$_2$ partial pressure, substrate temperature, power, and total pressure. All the samples received the heat treatment at 45$0^{\circ}C$ for 30 min. The resulting films are characterized by mechanical stylus($\alpha$-step), x-ray diffraction(XRD), scanning electron microscopy(SEM), and four point probe method. The Tin film properties strongly depend on the deposition condition. The stoichiometry and Ti deposition rate are critically affected by nitrogen partial pressure, and the resistivity, in particular, is dependent on both the substrate temperature and sputtering power.

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Local structure and transport properties of $La_{0.7}Ca_{0.3-x}Ba_{x}MnO_3$ manganites

  • A.N.Ulyanov;Yang, Dong-Seok;Yu, Seong-Cho
    • Proceedings of the Korean Magnestics Society Conference
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    • 2003.06a
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    • pp.62-63
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    • 2003
  • Electron-phonon interaction plays a significant role in forming of colossal magnetoresistance effect (CMR). Polaron formation was observed by neutron diffraction and by extended X-ray absorption fine structure (EXAFS) analysis. Local probe as given by the EXAFS is a useful method to study the polaronic charge and its dependence on temperature and ions size. Here we present the EXAFS study of polaronic charge in $La_{0.7}Ca_{0.3-x}Ba_{x}MnO_3$ compositions.

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Reaction diffusion and formation of$Ni_3Al$ phase at the Ni-NiAl diffusion couple (Ni-NiAl 확산대에서 $Ni_3Al$ 상의 형성과 반응확산)

  • 정승부
    • Journal of Welding and Joining
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    • v.15 no.3
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    • pp.128-135
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    • 1997
  • Reaction diffusion and formation of $Ni_3Al$phase with $L1_2$ structure have been studied in temperature range of 1432K to 1573K using the diffusion couple of (Ni-40, 5at%Al)/(Ni-14, 1at%Al) and (Ni-49, 2at%Al)/ (Nickel). The layer growth of Ni$_{3}$Al pyhase in the annealed diffusion couple was measured by optical microscope and electron probe microanalyzer (EPMA). The layer growth of $Ni_3Al$phase in diffusion zone obeyed the parabolic law without any indication of grain boundary effects. The layer growth of $Ni_3Al$phase in temperature range of 1423K to 1573K was mainly controlled by the volume diffusion mechanism. The rate of layer growth of $Ni_3Al$phase was found to be colsely related to the composition of intermetallic compound NiAl phase. The activation energy for layer growth of $Ni_3Al$phase was calculated to be 127kJ/mol.

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KSTAR NBI 이온원의 수소 및 헬륨 개스에서의 방전특성

  • 김계령;박선기;오병훈;최병호
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.224-224
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    • 1999
  • KSTAR 토카막의 플라즈마 가열을 위한 NBI 장치의 대전류 이온원 방전 특성을 수소와 헬륨 개스를 사용하여 조사하였다. NBI 이온원은 빔 방향과 반대로 가속되는 전자들을 저지하는 전자덤프(electron dump), 병렬로 연결된 32개의 텅스텐 필라멘트(직경 1.5nn0, 영구자석(Nd-Fe)에 의해 만들어지는 강한 cusp 자장으로 둘러싸인 플라즈마 방전실 및 120kV의 에너지를 인가하는 가속부로 이루어지는데, 최대 빔 전류 65A에서 300초의 장시간 운전을 목표로 하고 있다. 수소와 헬륨 개스 분위기에서 안정된 플라즈마를 얻을 수 있는 필라멘트 전류의 파형을 각각 구하고, 기체압력(0.01~0.4 mbar) 및 아크 전류(100~1200A에)에 따른 플라즈마 파라메타 값들을 직경 1mm의 Langmuir probe를 이용하여 측정하였다. 또한 이온원 운전에 중요한 파라메타인 방전실 내의 플라즈마 밀도 분포와 장시간 운전 가능성에 대한 조사도 수행하였다.

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