• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1875-1878
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• 2005

It is not efficient and scarcely out of the question to use commercial expensive electron beam lithography system widely used for semiconductor fabrication process for the manufacturing application field of various devices in the small business scope. Then scanning electron microscope based electron beam machining system is maybe regarded as a powerful model can be used for it simply. To get a complete suite of thus proper system, column unit build up with electron beam gun head unit is necessarily required more than anything else to modify scanning electron microscope. In this study, various components included ceramic isolation plate and main body which are essentially constructed for electron beam gun head unit are designed and manufactured. And this electron beam gun head unit will be used for next connected study in the development step of scanning electron microscope based electron beam machining system.

• 한국레이저가공학회지
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• 제12권2호
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• pp.26-30
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• 2009

Scanning Electron Microscopy (SEM) includes high voltage generator, electron gun, column, secondary electron detector, scan coil system and image grabber. Column includes electron lenses (condenser lens and objective lens). Condenser lens generates fringe field, makes focal length and control spot size. Focal length represents property of lens. Objective lens control focus. Most of the electrons emitted from the filament, are captured by the anode. The portion of the electron current that leaves the gun through the hole in the anode is called the beam current. Electron beam probe is called the focused beam on the specimen. Because of the lens and aperture, the probe current becomes smaller than the beam current. It generate various signals(backscattered electron, secondary electron) in an interaction with the specimen atoms. In this paper, we describe the result of research to develop the core elements for low-resolution SEM.

• E2M - 전기 전자와 첨단 소재
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• 제9권7호
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• pp.660-667
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• 1996

The electron transport characteristics in $SF_6$ gas is calculated for range of E/N values from 150 -800(Td) by the Monte Carlo simulation using a set of electron collision cross sections determined by the authors. The results suggest that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients in nearly agreement with the respective experimental and theoretical for a range of E/N. The electron energy distributions function were analysed in sulphur hexaflouride at E/N:500 and 800(Td) for a case of the equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by a Time of Flight method also investigated as a set of electron collision cross section for sulphur Hexaflouride.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.88-93
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• 1999

This paper describes the electron transport characteristics in $SiH_4$ gas calculated for the range of E/n:0.5~300(Td) and Pressure:0.5, 1, 2.5(Torr) by the Monte carlo simulation and Boltzmann equation method using a set of electron collision cross sections determined by the reported results. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal and transverse diffusion coefficients, the electron ionization coefficients, characteristics energy and the electron energy distribution function. The electron energy distributions function has been analysed in $SiH_4$ at E/N: 30, 50(Td)for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Monte carlo simulation and Boltzmann equation have been compared with experimental data by ohmori ad Pollock.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.140.1-140.1
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• 2015

Currently, As Plasma application is expanded to the industrial and medical industrial, Low temperature plasma characteristics became important. Especially in Medical industrial, Low temperature plasma directly adapted to human skin, so their plasma parameter is important. One of the plasma parameters is electron density, some kinds of method to measuring electron density are Thomson scattering spectroscopy and Millimeter-wave transmission measurement. But most methods is expensive to composed of experiment system. Heterodyne interferometer system is cheap and simple to setting up, So we tried to measuring electron density by Laser heterodyne interferometer. To measuring electron density at atmospheric pressure, we need to obtain the phase shift signal. And we use a heterodyne interferometer. Our guiding laser is Helium-Neon laser which generated 632 nm laser. We set up to chopper which can make a laser signal like a pulse. Chopper can make a 4 kHz chopping. We used Needle jet as Ne plasma sources. Interference pattern is changed by refractive index of electron density. As this refractive index change, phase shift was occurred. Electron density is changed from Townsend discharge's electron bombardment, so we observed phenomena and calculated phase shift. Finally, we measured electron density by refractive index and electron density relationship. The calculated electron density value is approximately 1015~1016 cm-3. And we studied electron density value with voltage.

• Bulletin of the Korean Chemical Society
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• 제28권3호
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• pp.391-396
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• 2007

The three-dimensional structure of an inorganic crystal, CaMoO4 (space group I 41/a, a = 5.198(69) A and c = 11.458(41) A), was determined by electron crystallography utilizing a high voltage electron microscope. An initial structure of CaMoO4 was determined with 3-D electron diffraction patterns. This structure was refined by crystallographic image processing of high resolution TEM images. X-ray crystallography of the same material was performed to evaluate the accuracy of the TEM structure determination. The cell parameters of CaMoO4 determined by electron crystallography coincide with the X-ray crystallography result to within 0.033-0.040 A, while the atomic coordinates were determined to within 0.072 A.

• Applied Microscopy
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• 제38권3호
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• pp.275-278
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• 2008

Electron tomography (ET) is an electron microscopic technique for obtaining a 3-D image from any electron microscopy specimen and its application in biomedical science has been increased thanks to development of electron microscopy and related technologies during the last decade. There are few researches on ET in Korea during this period. Although the importance of ET has been recognized recently by many researchers, initial approach to electron tomographic research is not easy for beginners. The 4th International Congress on Electron Tomography (4 ICET) was held on Nov $5{\sim}8$, 2006, at San Diego. The program dealt instrumentation, reconstruction algorithm, visualization/quantitative analysis and electron tomographic presentation of biological specimen and nano particles. 1 have summarized oral presentations and analyzed the posters presented on the meeting. Cryo-electron microscopic system was popular system for ET and followed conventional transmission electron microscopic system. Cultured cell line and tissue were most popular specimens analyzed and microorganisms including bacteria and virus also constituted important specimens. This analysis provides a current state of art in ET research and a guide line for practical application of ET and further research strategies.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 E
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• pp.1803-1805
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• 1998

Electron temperature, electron density and electron energy distribution function were measured in Radio-Frequency Inductively Coupled Plasma(RFICP) using a probe method. Measurements were conducted in argon discharge for pressure from 10 mTorr to 40 mTorr and input rf power from 100W to 600W and flow rate from 3 sccm to 12 sccm. Spatial distribution electron temperature and electron density and electron energy distribution function were measured for discharge with same aspect ratio(R/L=2). Electron temperature was found to depend on pressure, but only weakly on power. Electron density and electron energy distribution function strongly depended on both pressure and power. Electron density and electron energy distribution function increased with increasing flow rate. Radial distribution of the electron density and electron energy distribution function were peaked in the plasma center. Normal distribution of the electron density electron energy distribution function were peaked in the center between quartz plate and substrate. These results were compared to a simple model of ICP, then we found out the generation mechanism of Radio-Frequency Inductively Coupled Plasma.

• E2M - 전기 전자와 첨단 소재
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• 제7권6호
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• pp.462-472
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• 1994

In this paper, electron drift velocity is experimentally measured in SF$_{6}$+N$_{2}$ Gas by induced cur-rent method and quantitaive production of electron transport coefficient is calculated by backward-prolongation of Boltzmann equation. Then electron energy distribution function and attachment coefficients are calculated. This paper can use the electron drift velocity by experimentally and the electron transport coefficient by calculated as a basic data of mixed Gas by comparing and investigating.g.

• 대한전자공학회논문지SD
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• 제45권6호
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• pp.16-21
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• 2008

본 논문은 새롭게 제안된 단일전자 소자(single-electron device) 및 회로를 이용한 새로운 형태의 홉필드 신경회로망(Hopfield neural network)을 소개한다. 홉필드 신경회로망의 전기적 모델 내부에서 가변저항으로 사용되는 단일전자 시냅스(single-electron synapse)와 비선형 활성함수(nonlinear activation function)로 사용되는 두 단의 단일전자 인버터(single-electron inverter)를 몬테-칼로(Monte-Carlo) 방식의 단일전자 회로 시뮬레이터로 동작을 검증한다.