• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.525-528
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• 1997

In this study, Eu(TTA)$_3$(phen) was synthesized and its films were prepared by vapor deposition method. Its films were characterized by UV-Vis absorption spectroscopy, Atomic Force Microscopy(AFM) and Photoluminescence(PL) measurements. Their electroluminescent(EL) characteristics were investigated by PL measurements, where a cell structure of glass substrate/ITO/Eu(TTA)$_3$(phen)/Al was employed. It was found that its films were well prepared without any decomposition and the film thickness could be controlled by adjusting the amount of Eu(TTA)$_3$(phen) in a boat. The EL spectrum of these films was almost the same as that of PL spectrum of these films.

• 마이크로전자및패키징학회지
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• 제10권1호
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• pp.1-5
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• 2003

본 연구에서는 ITO (indium tin oxide)/glass 투명기판 위에 다층구조의 OELD (organic electroluminescent devices) 소자를 진공 열증착법으로 제작하였다. 발광층 재료로서 Alq$_3$(tris-(8-hydroxyquinoline)aluminum)물질을 사용하였고, 정공수송층으로는 TPD (triphenyl-diamine) 및 $\alpha-NPD$를 사용하였다. 정공주입층 재료로서 CuPc (Copper phthalocyanine)를 사용하였다. 또한 QD2(quinacridone2) 물질을 $Alq_3$ 발광층내에 약 $10\AA$ 두께로 증착하여 발광효율 향상을 시도하였다. 제작된 모든 소자의 발광개시전압은 약 7 V 이었으며, 정공수송층으로 TPD 물질대신에 열적안정성이 우수한 $\alpha-NPD$를 사용한 경우 휘도값과 발광효율이 개선되었다. $Alq_3$ 발광층 사이에 QD2 물질을 적층한 소자에서 발광효율은 1.55 lm/W 값을 나타내어 $Alq_3$ 발광층만을 사용한 경우에 비해 약 8배 발광효율이 향상되었다.

• 센서학회지
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• 제8권1호
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• pp.10-15
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• 1999

ZnS 형광체와 BST 강유전체 박막을 절연층으로 사용한 백색방출 전계발광소자를 제작하였다. BST 박막의 제조조건으로 target의 조성비가 $Ba_{0.5}Sr_{0.5}TiO_3$이며, 기판온도가 $400^{\circ}C$, 분위기압이 30 mTorr, A:$O_2$의 비가 9:1일때 유전율이 1 kHz의 주파수에서 209를 나타내었다. 형광층으로 ZnS:Mn, ZnS:Tb 및 ZnS:Ag를 사용하였으며, 활성제 각각의 첨가량은 0.8, 0.8 및 1 wt%로 하였다. 형광층 전체의 두께가 500 nm로 하고 하부 절연층을 200 nm, 상부절연층을 400 nm로 증착하였을 때, 박막 전계발광소자의 발광문턱전압은 약 95 V 였고, 최고휘도는 150 V에서 약 $3000\;cd/m^2$이었다. 발광스펙트럼를 관찰한 결과 청색영역(450 nm), 녹색영역(550 nm) 그리고 적색영역(600 nm)의 파장에서 각각의 피이크가 나타나는 것을 관찰하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.669-672
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• 2004

The thin-film passivation technology using the poly-para-xylylene (parylene) was applied to polymer electroluminescent devices. The fabricated device shows a good luminescent characteristic of maximum 11640 cd/$m^2$. The measured lifetime was reached up to 28 hours, which means the effectiveness of the passivation. Applying the parylene thin-film passivation technique, 10${\times}$10 passive matrix display system was implemented and obtained some still images.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2006년도 전기학술대회논문집
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• pp.259-260
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• 2006

Effects of Rb doping on the aging characteristics have been studied in SrS:Ce thin film electroluminescence (EL) devices. It has been found that a luminance saturation and decrease of an EL efficiency are suppressed by Rb doping. For the SrS:Ce,Rb device, a luminance and an efficiency after 1024 h of aging at 1 kHz drive maintain at about 70% and 80% of the initial values, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.644-647
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• 2007

We have fabricated vertical type organic thin film transistor using tris-8-hydroxyquinoline aluminum $(Alq_3)$. The effects of the growth control of $Alq_3$ thin layer on the grain structure and the flatness of film surface have been investigated. In addition, we have fabricated light emitting transistor and then investigated electroluminescent properties.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.303.2-303.2
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• 2014

The oxides of group IV transition metals such as titanium, zirconium, hafnium have many important current and future application, including protective coatings, sensors and dielectric layers in thin film electroluminescent (TFEL) devices. Recently, group IV transition metal oxide films have been intensively investigated as replacements for SiO2. Due to high permittivities (k~14-25) compared with SiO2 (k~3.9), large band-gaps, large band offsets and high thermodynamic stability on silicon. Herein, we report the synthesis of new group IV transition metal complexes as useful precursors to deposit their oxide thin films using chemical vapor deposition technique. The complexes were characterized by FT-IR, 1H NMR, 13C NMR and thermogravimetric analysis (TGA). Newly synthesised compounds show high volatility and thermal stability, so we are trying to deposit metal oxide thin films using the complexes by Atomic Layer Deposition (ALD).

• 센서학회지
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• 제4권4호
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• pp.10-15
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• 1995

유기 박막 electoluminescent(EL) 소자를 제작하여 전극의 일함수에 따른 출력휘도의 의존성과 휘도-전압 특성을 측정하였다. 제작된 소자의 구조는 Indium-Tin-Oxide(ITO)/정공수송층/발광층(전자수송층)/금속전극이며, 정공수송층으로는 PMMA+TPD(0.5wt%)와 측쇄 액정 고분자 메트릭스인 MC homopolymer+TPD(0.005wt%)와 (MC/MMA)copolymer+TPD(0.005wt%)을 사용하였으며, 발광층은 $Alq_{3}$을, 금속전극으로는 Ca, Mg, Mg:Ag(10:1) 와 Al을 사용하였다. 출력특성이 전압에 따른 정류특성을 가짐을 보였으며, 소자의 문턱전압은 5볼트이고, 출력 휘도는 10 볼트에서 700 $Cd/m^{2}$이상의 휘도를 보였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1280-1283
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• 2005

A novel zinc complex, Zn(phen)q, was synthesized from 1,10-phenanthroline (phen) and 8-hydroxyquinoline (q) as organic ligands and its electroluminescent (EL) properties were characterized. The structure of Zn(phen)q was elucidated by FT-IR, UV-Vis and XPS. The complex Zn(phen)q showed thermal stability up to $300^{\circ}C$ under nitrogen flow, which was measured by TGA and DSC. The photoluminescence (PL) of the Zn(phen)q was measured from the THF solution and the solid film on quartz substrate. The PL emission of Zn(phen)q exhibited green light centered at about 505nm. The EL devices were fabricated by the vacuum deposition. The EL devices having the structure of ITO/a-NPD/Zn(phen)q/Li:Al were studied, where 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl(a-NPD) used as a hole transport layer(HTL). a-NPD has high Tg of $96^{\circ}C$ and thus makes the device thermally stable. The EL emission of Zn(phen)q exhibited also green light centered at 532nm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.306-309
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• 1989

This paper describes the Manufacturing process and electrical properties of ac thick film electroluminescent lamps which made of the mixture of ZnS:Cu,Cl phosphor powder and polymer binding materials. The phosphor layer is sandwiched between two electrodes, one of which is transparent, and is supported by a substrate. The substrate may be glass or flexible plastic or it may be metallic. In this study we manufactured suspend layer which consists of ZnS:Cu,Cl powder suspended in a NBR. As yet our results are behind other commercial product in electrical properties and brightness. However they can be improved by selection of appropriate polymer binding materials, development of blending technology.