• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1382-1384
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• 1998

Electroluminescence is occurred when phosphor is located in electric field. Object of this research show new type of powder electroluminescent device (PELD) for high brightness compared with conventional PELD. New type of PELD structured as follow ITO/phosphor + dielectric/Silver paste). To investigate optical properties of PELDs, EL spectrum, CIE coordinate system, Brightness of PELDs was measured. The suitable ratio between phosphor and dielectric in new type of PELD was 7:3(phosphor:dielectric). At 200 V 400 Hz, new type of PELD which had ratio of 7:3 was 5700 cd/$m^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.94-97
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• 2002

We report highly efficient phosphorescent-dye-doped polymeric light-emitting devices. The devices consist of a polymeric light-emitting layer comprising the phosphorescent dye, host, and matrix polymers. We patterned the phosphorescent-dye-doped polymeric layer with the LITI technique. The devices showed high efficiencies and good pattern quality to adapt to the development of full-color electroluminescent (EL) devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.578-580
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• 2002

A bright and highly monochromatic red organic electroluminescent device based on a poly(N-vinylcarbazole) host was made. The device structure consists of poly(N-vinylcarbazole) dispersed with a europium complex as an emitting layer and a hole blocking layer of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP). The EL cell exhibited just characteristic emission of europium ion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.403-406
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• 1998

Electroluminescence(EL) come from the light emission obtained by electrical excitation energy passing through a phosphor layer under applied high electrical field. The preparation and characterizations of light emitting ACPEL(alternating-current powder electroluminescent) cell based on two kinds of phosphor mixed ZnS:Mn, Cu and ZnS:Cu phosphor. Basic structure is ITO/Mixed Phosphor/insulator/Al sheet, each layer was mixed by binder, which concentration 11p for phosphor, 8p for insulator. Dielectric properties was investigated first and emission properties of P-LED based on ZnS:Mn,Cu/ZnS:Cu,Br mixture. Emission spectra exhibits two kinds of main peaks at 100V, 1kHz sinusoidal excitation.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1739-1741
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• 2000

DC current density-voltage and impedance spectroscopy studies have been performed on indium-tin-oxide(ITO)/para-sexiphenyl(6p)/aluminium organic electroluminescent device. The device exhibited a blue color emission, The turn-on voltage of the device is observed at 5V from the current density-voltage measurements. The impedance spectroscopy measurements show that a resonance frequency shift with applied DC bias is observed and a single semi-circle Cole-Cole plot is confirmed. The bias-dependent bulk resistance and bias-independent bulk capacitance is observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.116-119
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• 1997

In this paper A double-layer organic electroluminescent(EL) device was fabricated using a TPD(N,N'-dipheny] -N,N'-bis(3-methylphenyl)-[1,1'-biphenyl]-4.4'-diamine: aromatic diamine), as a hole-transport material and tris (8-hydroxy quinolinate) aluminum(Alq$_3$) as a an emiting material and its performance characteristics were investigated. structure of devices is ITO/TPD/Alq$_3$/Al. we have fabricated hole transport layer of two types. Doping material of Hole Transport material is Poly(methyl methacrylate)(PMMA) and PEI(Poly-Ether-Imide). Carrier injection from the electrodes to the doped PMMA and PEI layer through the dopants and concomitant electroluminescence from Alq$_3$were observed. Green emission with luminance of 40cd/m$^2$was achieved at a drive voltage of 30V

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.163-166
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• 1997

Electroluminescent(EL) dcvice based on organic thin layers have attracted lots of interests because of thier possible application as large-area light-emitting displays. It was known that MEH-PPV and 1, 1, 4, 4, -Tetraphenyl-1, 3-butadiene(TPB) has red and blue emission peak at 580nm and 480nm, respectively. In this study, MEH-PPV films and TPB films were prepared by spin coating and vacuum deposition method, respectively. Films of MEH-PPV and TPB double layer were also prepared by the same method. Photoluminescent(PL) characteristics of these single and doubler layers were investigated, where a cell structure of glass substrate/ITO/MEH-PPV and/or TPB/Al was employed. It was found that the photoluminescent efficiency of TPB film was higher than that of MEH-PPV film with a single layer and also with a double structure. These films have also different I-V characteristics.

• Bulletin of the Korean Chemical Society
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• v.26 no.5
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• pp.795-801
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• 2005

New PPV derivatives which contain electron-withdrawing trifluoromethyl ($CF_3$) group, poly[2-(2-ethylhexyloxy)-5-(4-trifluoro methylphenyl)-1,4-phenylenevinylene] (EH$CF_3$P-PPV), and poly[2-(2-ethylhexyloxy)-5-(3,5-bis(trifluoromethyl)-phenyl)-1,4-phenylenevinylene] (EHB$CF_3$P-PPV), have been synthesized by GILCH polymerization. As the result of the introduction of the electron-withdrawing $CF_3$ group to the phenyl substituent, the LUMO and HOMO energy levels of EH$CF_3$P-PPV (2.8, 5.1 eV) and EHB$CF_3$P-PPV (3.0, 5.3 eV) were lower than those of known poly[2-(2-ethylhexyloxy)-5-phenyl-1,4-phenylenevinylene] (EHP-PPV) (2.6, 4.9 eV). These polymers have been used as the electroluminescent (EL) layers in double layer lightemitting diodes (LEDs) (ITO/PEDOT/polymer/Al). EH$CF_3$P-PPV, and EHB$CF_3$P-PPV show maximum photoluminescence (PL) peaks at ${\lambda}_{max}$ = 550, 539 nm, and maximum EL peak at ${\lambda}_{max}$ = 545, 540 nm, respectively. The current-voltage-luminance (I-V-L) characteristics of the polymers show that turn-on voltages of EH$CF_3$P-PPV and EHB$CF_3$P-PPV are around 4.0 and 3.5 V, respectively.

• Bulletin of the Korean Chemical Society
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• v.34 no.9
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• pp.2609-2615
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• 2013

A series of fluorene-carbazole copolymers containing the pendant phosphor chromophore $Ir(absn)_2(acac)$ (absn: 2-(1-naphthyl)benzothiazole; acac: acetylacetone) were designed and synthesized via Yamamoto coupling. In the film state, these copolymers exhibited absorption and emission peaks at approximately 389 and 426 nm, respectively, which originated from the fluorene backbone. However, in electroluminescent (EL) devices, a significantly red-shifted emission at approximately 611 nm was observed, which was attributed to the pendant iridium(III) complex. Using these copolymers as a single emission layer, polymer light-emitting devices with ITO/PEDOT:PSS/polymer:DNTPD/TmPyPb/LiF/Al configurations exhibited a saturated red emission at 611 nm. The attached iridium(III) complex had a significant effect on the EL performance. A maximum luminous efficiency of 0.85 cd/A, maximum external quantum efficiency of 0.77, maximum power efficiency of 0.48 lm/W, and maximum luminance of 883 $cd/m^2$ were achieved from a device fabricated with the copolymer containing the iridium(III) complex in a 2% molar ratio.

• Korean Journal of Materials Research
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• v.23 no.8
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• pp.430-434
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• 2013

Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick $ZnSnO_x$ with a resistivity of $10{\Omega}{\cdot}cm$, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.