• Title/Summary/Keyword: Electroluminescence device

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A Study on the Characteristics of a Quantum Dots Light-Emitting Diodes Using a Mixed Layer of Quantum Dots and Hole Transport Materials (양자점과 정공 수송 물질의 혼합층을 사용한 양자점 전계발광 소자의 특성 연구)

  • Yoon, Changgi;Oh, Seongkeun;Kim, Jiwan
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.4
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    • pp.69-72
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    • 2021
  • Various studies for QLEDs using inkjet printing has been actively conducted. Multilayers in QLEDs need an orthogonal process inevitably using different solvents and it makes the inkjet printing process more difficult and expensive. Therefore, coating two layers in a single process can reduce the fabrication step, resulting in the process time. In this study, we fabricated QLEDs of standard structure using a mixture of emission layer and hole transport layer. The mixed layer was fabricated by dissolving TFB and QDs in chlorobenzene, and the maximum luminance of the device was 45,850 cd/m2. It shows the bright future of the electroluminescence devices applied with inkjet printing process.

Light Emitting Diode with Multi-step Quantum Well Structure for Sensing Applications (계단형 양자우물 구조가 적용된 센서 광원 용 발광다이오드 소자)

  • Seongmin Park;Seungjoo Lee;Jajeong Woo;Yukyung Kim;Soohwan Jang
    • Journal of Sensor Science and Technology
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    • v.32 no.6
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    • pp.441-446
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    • 2023
  • Electrical and optical characteristics of the GaN-based light-emitting diode (LED) with the improved multi-quantum well (MQW) structure have been studied for light source in bio-sensing systems. Novel GaN/In0.1GaN/In0.2GaN/In0.1GaN/GaN and Al0.1GaN/GaN/In0.2GaN/GaN/Al0.1GaN (MQW) structures were suggested, and their radiative recombination rate, light output power, electroluminescence, and external quantum efficiency were compared with those of the conventional GaN/In0.2GaN/GaN MQW structure using device simulation. The LED with the GaN/In0.1GaN/In0.2GaN/In0.1GaN/GaN MQW structure showed an excellent recombination rate of 5.57 × 1028 cm-3·s-1 that was more than one order improvement over that of the conventional LED. In addition, the efficiency droop was relieved by the suggested stepped MQW structure.

Enhanced Efficiency of Organic Electroluminescence Diode Using 2-TNATA:C60 Hole Injection Layer (2-TNATA:C60 정공 주입층을 이용한 유기발광다이오드의 성능 향상 연구)

  • Park, So-Hyun;Kang, Do-Soon;Park, Dae-Won;Choe, Young-Son
    • Polymer(Korea)
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    • v.32 no.4
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    • pp.372-376
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    • 2008
  • Vacuum deposited 4,4',4"-tris(N-(2-naphthyl)-N-phenylamino)-triphenylamine (2-TNATA), used as a hole injection (HIL) material in OLEDs, is placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in the devices. C60-doped 2-TNATA:C60 (20 wt%) film was formed via co-evaporation process and molecular ordering and topology of 2-TNATA:C60 films were investigated using XRD and AFM. The J-V, L-V and current efficiency of multi-layered devices were characterized as well. Vacuum-deposited C60 film was molecularly oriented, but neither was 2-TNATA:C60 film due to the uniform dispersion of C60 molecules in the film. By using C60-doped 2-TNATA:C60 film as a HIL, the current density and luminance of a multi-layered ITO/2-TNATA:C60/NPD/$Alq_3$/LiF/Al device were significantly increased and the current efficiency of the device was increased from 4.7 to 6.7 cd/A in the present study.

Study on Electroluminescence of the Phosphorescent Iridium(III) Complex Prepared by Ultrasonic Wave (초음파 합성법을 이용한 이리듐계 인광 물질 합성과 합성된 인광 물질의 전계 발광 특성 분석)

  • Yu, Hong-Jeong;Chung, Won-Keun;Chun, Byung-Hee;Kim, Sung-Hyun
    • Korean Chemical Engineering Research
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    • v.49 no.3
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    • pp.325-329
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    • 2011
  • $Ir(pmb)_{3}$(Iridium(III)Tri(1-phenyl-3-methylbenzimidazolin-2-ylidene-$C,C^{2'}$ ) was synthesized to develop a deep blue-emitting Ir(III) complex. We suggested the ultrasonic reactor to enhance the poor reaction yield of $Ir(pmb)_{3}$. The ultrasonic wave enhanced the reaction yield of $Ir(pmb)_{3}$ because the ultrasound helped non-soluble reactants disperse efficiently and produced free radial during the reaction. The maximum yield of $Ir(pmb)_{3}$ was 42.5%, which was 4 times higher than conventional method. Organic light emitting devices were fabricated with the synthesized mer-$Ir(pmb)_{3}$ which emitted at 405 nm. A range of host materials with large bandgaps (UGH2, mCP and CBP) were tested for developing a deep blue emitting device. In case of the device with mCP as the host material, it emitted deep blue and performed quite well relative to the other host materials tested.

Endothermic Forster Energy Transfer from DPVBi to BCzVBi in High Efficient Blue Organic Light-Emitting Diodes (고효율 청색 유기발광다이오드의 DPVBi와 BCzVBi 사이에서 발생하는 흡열 페르스터 에너지전이)

  • Kim, You-Hyun;Lee, Sang-Youn;Song, Wook;Shin, Sung-Sik;Ryu, Dae-Hyun;Wood, Richard;Yatulis, Jay;Kim, Woo-Young
    • Journal of the Korean Chemical Society
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    • v.54 no.3
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    • pp.291-294
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    • 2010
  • In this study, we demonstrated high-efficiency blue organic light-emitting diodes (OLEDs) employing BCzVBi as a blue fluorescent dye doped into blue host material, DPVBi with various concentration. The optimized blue OLED device having high-efficiency was constructed with structure of NPB (500 ${\AA}$) / DPVBi:BCzVBi-6% (150 ${\AA}$)/$Alq_3$(300 ${\AA}$) / Liq (20 ${\AA}$) / Al (1000 ${\AA}$). The maximum luminescence of blue OLED was 13200 cd/$m^2$ at 13.8 V and current density and maximum efficiency were 26.4 mA/$cm^2$ at 1000 cd/$m^2$ and 4.24 cd/A at 3.9 V, respectively. Luminous efficiency shows two times higher than comparing with non-doped BCzVBi blue OLED whereas $CIE_{x,y}$ coordinate was similar with bare DPVBi blue OLED such as (0.16, 0.19). Electroluminescence of BCzVBi-6% doped blue OLED has two major peaks at 445 nm and 470 nm whereas pure DPVBi's blue peak appears at 456 nm and it is happened through endothermic Forster energy transfer by molecule's vibration between LUMO of DPVBi as host material and LUMO of BCzVBi as dopant in device.

Fabrication and Characterization of High Luminance WOLED Using Single Host and Three Color Dopants (단일 호스트와 3색 도펀트를 이용한 고휘도 백색 유기발광다이오드 제작과 특성 평가)

  • Kim, Min Young;Lee, Jun Ho;Jang, Ji Geun
    • Korean Journal of Materials Research
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    • v.26 no.3
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    • pp.117-122
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    • 2016
  • White organic light-emitting diodes with a structure of indium-tin-oxide [ITO]/N,N-diphenyl-N,N-bis-[4-(phenylm-tolvlamino)-phenyl]-biphenyl-4,4-diamine [DNTPD]/[2,3-f:2, 2-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile [HATCN]/1,1-bis(di-4-poly-aminophenyl) cyclo -hexane [TAPC]/emission layers doped with three color dopants/4,7-diphenyl-1,10-phenanthroline [Bphen]/$Cs_2CO_3$/Al were fabricated and evaluated. In the emission layer [EML], N,N-dicarbazolyl-3,5-benzene [mCP] was used as a single host and bis(2-phenyl quinolinato)-acetylacetonate iridium(III) [Ir(pq)2acac]/fac-tris(2-phenylpyridinato) iridium(III) $[Ir(ppy)_3]$/iridium(III) bis[(4,6-di-fluoropheny)-pyridinato-N,C2] picolinate [FIrpic] were used as red/green/blue dopants, respectively. The fabricated devices were divided into five types (D1, D2, D3, D4, D5) according to the structure of the emission layer. The electroluminescence spectra showed three peak emissions at the wavelengths of blue (472~473 nm), green (495~500 nm), and red (589~595 nm). Among the fabricated devices, the device of D1 doped in a mixed fashion with a single emission layer showed the highest values of luminance and quantum efficiency at the given voltage. However, the emission color of D1 was not pure white but orange, with Commission Internationale de L'Eclairage [CIE] coordinates of (x = 0.41~0.45, y = 0.41) depending on the applied voltages. On the other hand, device D5, with a double emission layer of $mCP:[Ir(pq)_2acac(3%)+Ir(ppy)_3(0.5%)]$/mCP:[FIrpic(10%)], showed a nearly pure white color with CIE coordinates of (x = 0.34~0.35, y = 0.35~0.37) under applied voltage in the range of 6~10 V. The luminance and quantum efficiency of D5 were $17,160cd/m^2$ and 3.8% at 10 V, respectively.

Enhanced Efficiency of Organic Electroluminescence Diode Using PEDOT-PSS/NPD-$C_{60}$ Hole Injection/Transport Layers (PEDOT-PSS/NPD-$C_{60}$ 정공 주입/수송 층이 도입된 유기발광소자의 성능 향상 연구)

  • Park, Kyeong-Nam;Kang, Hak-Su;Senthilkumar, Natarajan;Park, Dae-Won;Choe, Young-Son
    • Polymer(Korea)
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    • v.33 no.5
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    • pp.407-412
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    • 2009
  • Vacuum deposited N,N-di-1-naphthyl-N,N-diphenyl-1,1'-biphenyl-4,4'-diamine (NPD) as a hole transporting (HTL) materials in OLEDs was placed on PEDOT-PSS, a hole injection layer (HIL). PEDOT-PSS was spin-coated on to the ITO glass. $C_{60}$-doped NPD-$C_{60}$(10 wt%) film was formed via co-evaporation process and the morphology of NPD-$C_{60}$ films was investigated using XRD and AFM. The J - V, L - V and current efficiency of multi -layered devices were characterized. According to XRD results, the deposited $C_{60}$ thin film was partially crystalline, but NPD-$C_{60}$ film was observed not to be crystalline, which indicates that $C_{60}$ molecules are uniformly dispersed in the NPD film. By using $C_{60}$-doped NPD-$C_{60}$ film as a HTL, the current density and luminance of multi-layered ITO/PEDOT-PSS/NPD-$C_{60}/Alq_3$/LiF/Al device were significantly increased by about 80% and its efficiency was improved by about 25% in this study.