• Title/Summary/Keyword: Electroluminescence device

검색결과 187건 처리시간 0.029초

2개의 형광 도판트를 적용한 단일발광층 유기발광소자의 광학적 특성 연구 (Study on Optical Characteristics of Organic Light-emitting Diodes Using Two Fluorescence Dopants in Single Emissive Layer)

  • 김태구;오환술;김유현;김우영
    • 한국진공학회지
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    • 제19권3호
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    • pp.184-189
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    • 2010
  • 두 가지의 형광도판트를 이용하여 제작된 단일 발광층 유기발광다이오드(OLEDs)는 ITO / NPB ($700{\AA}$) / MADN : C545T - 1.0% : DCJTB - 0.3% ($300{\AA}$) / Bphen ($300{\AA}$>) / LiF ($10{\AA}$) / Al ($1,000{\AA}$)으로 구성되었다. C545T와 DCJTB는 각각 녹색과 적색 도판트로 사용되었고, 호스트 물질인 MADN에 대해서 각각 다른 농도로 도핑하였다. 이러한 두 가지 형광도 판트를 사용한 제적화된 OLED는 8.42 cd/A의 효율과 6 V에서 $3169 cd/m^2$의 발광 휘도와 (0.43, 0.50)의 색좌표를 가졌다. 이러한 OLED 구조의 electroluminescence는 각각 C545T와 DCJTB에 따라 500 nm와 564 nm의 피크를 가졌다. 이러한 결과는 MADN에서 C545T로 C545T에서 DCJTB로 포스터 에너지 전이가 일어났음을 설명할 수 있다.

Polymer Phosphorescence Device using a New Green Emitting Ir(III) Complex

  • Lee, Chang-Lyoul;Das, Rupasree Ragini;Noh, Yong-Young;Kim, Jang-Joo
    • Journal of Information Display
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    • 제3권1호
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    • pp.6-10
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    • 2002
  • We have synthesized a new green Ir(III) complex fac-tris-(3-methyl-2-phenyl pyridine)iridium(III) $Ir(mpp)_3$ and fabricated phosphorescent polymer light-emitting device using it as a triplet emissive dopant in PVK. $Ir(mpp)_3$ showed absorption centered at 388 nm corresponding to the $^1MLCT$ transition as .evidenced by its extinction coefficient of the order of $10^3{\cdot}$ From the PL and EL spectra of the $Ir(mpp)_3$ doped PVK film, the emission maximum was observed at 523 nm, due to the radiative decay from the $^3MLCT$ state to the ground state, confirming a complete energy transfer from PVK to $Ir(mpp)_3$. The methyl substitution has probably caused a red shift in the absorption and emission spectrum compared to $Ir(mpp)_3$. The device consisting of a 2 % doped PVK furnished 4.5 % external quantum efficiency at 72 $cd/m^2$ (current density of 0.45 $mA/cm^2$ and drive voltage of 13.9 V) and a peak luminance of 25,000 $cd/m^2$ at 23.4 V (494 $mA/cm^2$). This work demonstrates the impact of the presence of a methyl substituent at the 3-position of the pyridyl ring of 2-phenylpyridine on the photophysical and electroluminescence properties.

Study on Efficiency Droop in a-plane InGaN/GaN Light Emitting Diodes

  • Song, Hoo-Young;Suh, Joo-Young;Kim, Eun-Kyu;Baik, Kwang-Hyeon;Hwang, Sung-Min;Yun, Joo-Sun;Shim, Jong-In
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.145-145
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    • 2011
  • Light-emitting diodes (LEDs) based on III-nitrides compound semiconductors have achieved a high performance device available for display and illumination sector. However, the conventional c-plane oriented LED structures are still showing several problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. The QCSE results in spatial separation of electron and hole wavefunctions in quantum wells, thereby decreasing the internal quantum efficiency and red-shifting the emission wavelength. Due to demands for improvement of device performance, nonpolar structure has been attracting attentions, since the quantum wells grown on nonpolar templates are free from the QCSE. However, current device performance for nonpolar LEDs is still lower than those for conventional LEDs. In this study, we discuss the potential possibilities of nonpolar LEDs for commercialization. In this study, we characterized current-light output power relation of the a-plane InGaN/GaN LEDs structures with the variation of quantum well structures. On-wafer electroluminescence measurements were performed with short pulse (10 us) and low duty factor (1 %) conditions applied for eliminating thermal effects. The well and barrier widths, and indium compositions in quantum well structures were changed to analyze the efficiency droop phenomenon.

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Orange Phosphorescent Organic Light-emitting Diodes Using a Spirobenzofluorene-type Phospine Oxides as Host Materials

  • Jeon, Young-Min;Lee, In-Ho;Lee, Chil-Won;Lee, Jun-Yeob;Gong, Myoung-Seon
    • Bulletin of the Korean Chemical Society
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    • 제31권10호
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    • pp.2955-2960
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    • 2010
  • Spiro-type orange phosphorescent host materials, 9-diphenylphosphine oxide-spiro[fluorene-7,9'-benzofluorene] (OPH-1P) and 5-diphenylphosphine oxide-spiro[fluorene-7,9'-benzofluorene] (OPH-2P) were successfully prepared by a lithiation reaction followed by a phosphination reaction with diphenylphosphinic chloride. The EL characteristics of OPH-1P and OPH-2P as orange host materials doped with iridium(III) bis(2-phenylquinoline)acetylacetonate ($Ir(pq)_2acac$) were evaluated. The electroluminescence spectra of the ITO (150 nm)/DNTPD (60 nm)/NPB (30 nm)/OPH-1P or OPH-2P: $Ir(pq)_2acac$ (30 nm)/BCP (5 nm)/$Alq_3$ (20 nm)/LiF (1 nm)/Al (200 nm) devices show a narrow emission band with a full width at half maximum of 75 nm and $\lambda_{max}$ = 596 nm. The device obtained from OPH-1P doped with 3% $Ir(pq)_2acac$ showed an orange color purity of (0.580, 0.385) and an efficiency of (14 cd/A at 7.0 V). The ability of the OPH-P series to combine a high triple energy with a low operating voltage is attributed to the inductive effect of the P=O moieties and subsequent energy lowering of the LUMO, resulting in the enhancement of both the electron injection and transport in the device. The overall result is a device with an EQE > 8% at high brightness, but operating voltage of less than 6.4 V, as compared to the literature voltages of ~10 V.

Fluorescent Blue Materials for Efficient Organic Light-Emitting Diode with High Color Purity

  • Choi, Kyung-Sun;Lee, Chan-Hyo;Lee, Kwan-Hee;Park, Su-Jin;Son, Seung-Uk;Chung, Young-Keun;Hong, Jong-In
    • Bulletin of the Korean Chemical Society
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    • 제27권10호
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    • pp.1549-1552
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    • 2006
  • We report a new series of blue dopants composed of both electron donating and electron accepting moieties in one molecule, based on nalidixic acid. The EL device derived from the dopant exhibits pure blue light emission (0.15, 0.14) The current efficiency is estimated to be 3.88 cd/A at 100 $cd/m^2$, which shows remarkable enhancement, compared to that of the host itself (2.5 cd/A at 100 $cd/m^2$) under the same conditions. These results demonstrate that the incorporation of a proper guest into the host in a guest-host doped system improves not only the purity of the fluorescent blue emission but also elevates its quantum efficiency, thus improving the OLED performance.

(${\alpha}-Naphthyl$ Group이 치환된 안트라센 염료의 전계발광 특성 (Electroluminescent Properties of Anthracene-Based Dye with ${\alpha}-Naphthylethenyl$ Subsituent)

  • 김홍수;이동규;남기대
    • 한국응용과학기술학회지
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    • 제16권2호
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    • pp.127-133
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    • 1999
  • New electroluminescent materials base on anthracene chromophore, [9.10-bis(${\alpha}$-naph -thylethenyl) anthracene (${\alpha}$-BNA)] were newly synthesized. The anthracene derivatives with bulky substituent possessed high melting point and they gave stable amorphous films through vacuum - sublimation methods. Three types of electroluminescent devices were fabricated with double layer and triple layer structure : ITO/TPD/emission layer/MgAg, ITO/emission layer/ OXD-7 and ITO/ TPD/ emission layer/OXD-7/MgAg, respectively. In three types of devices with the emissive layer of ${\alpha}$-BNA, efficient orange electroluminescence was observed. In the triple layer device whit a emitting layer of 20 nm thickness , maximum luminance was about 10000 cd/ $m^2$ at an applied voltage of 10v and maximum external quantum efficiency was 1.0%.

Electroluminescence Properties of Simple Anthracene Derivatives Containing Phenyl or Naphthyl Group at 9,10-position for the Blue OLED

  • Kim, Si Hyun;Lee, Song Eun;Kim, Yong Kwan;Lee, Seung Hee
    • 한국응용과학기술학회지
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    • 제34권3호
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    • pp.562-567
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    • 2017
  • The organic light-emitting diodes are fabricated with six anthracene derivatives containing simple substituents such as phenyl or naphthyl group. The device structure is as in the following: Indium tin oxide (ITO) (180 nm)/4,4-4,4',4"-tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (2-TNATA) (30 nm)/4,4'-bis[N-(1-naphthyl)-N-phenyl-1-amino] biphenyl (NPB) (20 nm)/Emitting compound (30 nm)/2,2',2"-(1,3,5-Benzinetriyl)-tris (1-phenyl-1-H-benz-imidazole) TPBi (40 nm)/lithium quinolate (Liq) (2 nm)/Al (100 nm). In the emitting layer the anthracene derivatives are used without any dopant. All the six devices show blue emissions. Among the tested diodes, the one with 9-(2-naphthyl)-10-(p-tolyl) anthracene (2-NTA) exhibited luminous efficiency, power and external quantum efficiencies of 3.26 cd/A, 0.98 lm/A, 2.8 % at $20mA/cm^2$.

Co-evaporation methode에 의한 OLED의 발광 특성 (Characteristics of OLED by co-evaporation methode)

  • 이정태;나선웅;신경;이영종;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.1046-1049
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    • 2002
  • In this study, We fabricated Organic Electroluminescence device, in order to improve the efficiency of Blue OLED in the full-color OLED. We made two sample. Sample A is that We used TPD(N,N‘-bis(3-methylphenyl)-N,N'-diphenylbenzidine} as hole transport layer(HTL), and Butyl-PBD(2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole) as emitting material layer(EML) and Alq3(8-Hydroxyquinoline, aluminum} as electron transport layer(ETL). Sample B is that we used TPD(N, N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine} as HTL and co-evaporated Butyl-PBD and Alq3 as EML. We investigated the characteristic of brightness and current-:voltage. The sample B that co-evaporated Butyl-PBD and Alq3 as EML improved characteristic of brightness and current-voltage than sample A. Maximum luminescence of sample B is $310cd/m^2$ and threshold voltage is 7V.

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All Non-Dopant RGB Composing White Organic Light-Emitting Diodes

  • Yeh, Shi-Jay;Chen, Hung-Yang;Wu, Min-Fei;Chan, Li-Hsin;Chiang, Chih-Long;Yeh, Hsiu-Chih;Chen, Chin-Ti;Lee, Jiun-Haw
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1583-1586
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    • 2006
  • All non-dopant white organic light-emitting diodes (WOLEDs) have been realized by using solid state highly fluorescent red bis(4-(N-(1- naphthyl)phenylamino)phenyl)fumaronitrile (NPAFN) and amorphous bipolar blue light-emitting 2-(4- diphenylamino)phenyl-5-(4-triphenylsilyl)phenyl- 1,3,4-oxadiazole (TPAOXD), together with well known green fluorophore tris(8- hydroxyquinolinato)aluminum $(Alq_3)$. The fabrication of multilayer WOLEDs did not involve the hard-tocontrol doping process. Two WOLEDs, Device I and II, different in layer thickness of $Alq_3$, 30 and 15 nm, respectively, emitted strong electroluminescence (EL) as intense as $25,000\;cd/m^2$. For practical solid state lighting application, EL intensity exceeding $1,000\;cd/m^2$ was achieved at current density of $18-19\;mA/cm^2$ or driving voltage of 6.5-8 V and the devices exhibited external quantum efficiency $({\eta}_{ext})$ of $2.6{\sim}2.9%$ corresponding to power efficiency $({\eta}_P)$ of $2.1{\sim}2.3\;lm/W$ at the required brightness.

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Yellow Light-Emitting Poly(p-phenylenevinylene) Derivative with Balanced Charge Injection Property

  • Kim, Joo-Hyun;Lee, Hoo-Sung
    • Bulletin of the Korean Chemical Society
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    • 제25권5호
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    • pp.652-656
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    • 2004
  • A new luminescent polymer, poly{1,4-phenylene-1,2-ethenediyl-2'-[2"-(4'"-octyloxyphenyl)-(5"-yl)-1",3",4"-oxadiazole]-1,4-phenylene-1,2-ethenediyl-2,5-bis-dodecyloxy-1,4-phenylene-1,2-ethenediyl} (Oxd-PPV), was synthesized by the Heck coupling reaction. Electron withdrawing pendant, conjugated 1,3,4-oxadiazole (Oxd), is on the vinylene unit. The band gap of the polymer figured out from the UV-visible spectrum was 2.23 eV and the polymer film shows bright yellow emission maximum at 552 nm. The electroluminescence (EL) maximum of double layer structured device (ITO/PEDOT:PSS/Oxd-PPV/Al) appeared at 553 nm. Relative PL quantum yield of Oxd-PPV film is 3.6 times higher than that of MEH-PPV film. The HOMO and LUMO energy levels of Oxd-PPV figured out from the cyclic voltammogram and the UV-visible spectrum are -5.32 and -3.09 eV, respectively, so that more balanced hole and electron injection efficiency can be expected compared to MEH-PPV. A double layer EL of Oxd-PPV has an maximum efficiency of 0.15 cd/A and maximum brightness of 464 cd/$m^2$.