• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.972-975
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• 2002

Electroluminescence(EL) devices based on organic thin layers have attracted lot of interests because of their application as display. One of the problems is red material. It offered a short life and poor emission efficiency to boot. In this study, this problem can be solved by using a multi-layer device structure. Organic electroluminescent devices which are composed of organic thin multi-layer films are fabricated. The basic structure is ITO / Emitting layer / LiP / Al EL device in which Hole transport/Electron blocking PVK layer was blending. We demonstrate the enhancement of eletroluminescence (EL) from blends of poly(3-hexylthiophene) in poly(N-vinylcarvazole). The emitting layer is consisted of a host material(PVK) and a guest emitting material(P3HT). It was showed higher EL intensity and their electro-optical properties were investigated.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.792-794
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• 1998

The TPD and the $Alq_3$ film are widely used as a hole transport layer and an emitter layer respectively, in organic electroluminescent(EL) device (ITO Glass/TPD/$Alq_3$/metal). In this structure, we fabricated two models. Model(1) having ITO glass/$Alq_3$/Al structure and model(2) having ITO Glass/TPD/$Alq_3$/Al structure were fabricated by the vacuum evaporation. The comparison between model(1) and model(2) was made about the absorbance, the wave length, the current-voltage characteristic and the ln I - $V^{(1/2)}$characteristic respectively. Electroluminescence of green and wavelength of 510[nm] were observed in both model. We observed absorbance from 320[nm] to 430[nm] in $Alq_3$ material and from 250[nm] to 400[nm] in TPD material.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.545-548
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• 2008

We report the synthesis of blue emitting materials with a new core structure containing indenopyrazine. Non-doped device using one of these materials as a blue emitter was found to exhibit high external quantumn efficiency of 4.6% and excellent color purity of (0.154, 0.078) as well as narrow emission band of 47nm FWHM.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1619-1622
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• 2005

The ultra thin hole injection layer (HIL) was deposited on an indium-tin-oxide (ITO) anode by using an ion beam assisted d eposition (IBAD) for the fabrication of an polymeric electroluminescence device for the first time. The device with the HIL deposited by IBAD has higher external quantum efficiency than the device with the HIL by conventional thermal evaporation. It is found that the deposited HIL by IBAD has high surface coverage on ITO anode in a few nm regions because the HIL prepared has high adatom mobility by ion beam energy.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1383-1385
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• 2005

We synthesized new poly(p -phenylene vinylene) (PPV) derivatives including different portions of crosslink that could interconnect the backbone of PPV for application in optoelectronic devices such as lightemitting-diodes, photovoltaic cells, and lasers. The fluorescence and electroluminescence properties of PPV including crosslink were discussed with respect of their structure and length of crosslink unit.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.948-951
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• 2003

The electroluminescence (EL) properties were studied in organic light-emitting diodes with a red fluorescent dye, 4- (dicyanomethylene)- 2- tert-butyl-6 (1,1,7,7-tetramethyljulolidyl-9-enyl)- 4H- pyran (DCJTB) doped into tris-(8-hydroxyquinoline)aluminum ($Alq_{3}$), rubrene and the mixed matrix of $Alq_3$ and rubrene. The device with DCJTB doped into the $Alq_{3}$:rubrene mixed host shows an efficient red emission from DCJTB with a negligible EL emission from $Alq_{3}$ and a lower EL onset voltage compared to the device with DCJTB doped into the $Alq_{3}$ only host. The quantum efficiency is almost temperature-independent for the device with the $Alq_3:rubrene$ mixed host. The results indicate that recombination of injected electrons and holes occurs on rubrene and subsequent energy transfer to DCJTB dominates in the device with the $Alq_{3}$:rubrene mixed host.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1047-1049
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• 2003

Stibenequinone(SQ) derivative which was electronic transportation materials in Poly(N-vinylcarbazole) (PVK)-based on organic EL and an optical characteristic of organic EL which is mentioned previously was investigated. The Photoluminescence highest pick with blending TBSQ with PVK was shifted from 439nm to 517nm. This result indicates that an energy gap of a PVK/TBSQ blended sample is less than an energy gap of PVK. According to the electrochemistry characteristic, the ionization energy(Ip) and the electro affinity(Ea) decreased from 5.79eV to 5.63eV and 2.23eV to 2.63eV, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1377-1378
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• 1998

Blue light emitting electroluminescence(EL) diodes were fabricated utilizing Coronene and some organic materials. Coronene showed photoluminescence(PL) peak at 450nm in solution with high quantum efficiency. Multi layer system was applied to fabricate EL diode utilizing Coronene. The device showed didode-like applied voltage-current relationship. And blue light emitting was observed. The decay time of device was in a scale of some seconds. The trun-on voltage of device was about 9 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.42-42
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• 2010

Deep-trenched photonic crystals passing through InGaN/GaN quantum well structural layer have been fabricated on the surface of GaN-based light emitting diode(LED) using by electron beam nanolithography. The lattice constant and hole diameter of the photonic crystals are 230nm and 140nm, respectively. The structural and electro-optical properties have been investigated by scanning electron microscope(SEM) and power-current-voltage(L-I-V). Electroluminescence from GaN-based LED with deep-trenched photonic crystal shows the higher intensity than that without photonic crystal.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2006년도 전기학술대회논문집
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• pp.259-260
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• 2006

Effects of Rb doping on the aging characteristics have been studied in SrS:Ce thin film electroluminescence (EL) devices. It has been found that a luminance saturation and decrease of an EL efficiency are suppressed by Rb doping. For the SrS:Ce,Rb device, a luminance and an efficiency after 1024 h of aging at 1 kHz drive maintain at about 70% and 80% of the initial values, respectively.