• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.231-231
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• 2015

무전해 Ni의 Metal turnover (MTO)가 증가함에 따라, Ni과 Sn-Ag-Cu솔더간 계면 금속간화합물층의 두꺼워지고, Ni-Sn-P층에 형성된 Nano void의 수가 많아지게 되어 취성파괴가 증가한다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.349-349
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• 2015

최근 고용량의 리튬이온전지 개발이 절실하다. 흑연의 용량을 뛰어넘는 고용량 음극재료로서 흑연의 10배가 넘는 이론용량을 가지는 실리콘이 차세대 음극재료로 주목받고 있다. 그러나 실리콘은 큰 부피팽창과 낮은 전기전도도와 같은 문제점을 안고 있으므로 이를 해결하는 것이 시급하다. 따라서 본 연구에서는 이러한 실리콘 음극재료의 전기전도도 향상을 위해 무전해 Ni-B 도금을 이용하여 실리콘 파우더 표면에 Ni 금속을 부분적으로 형성시켰다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1507-1510
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• 2005

This study was carried out as a part of the research on the development of a maskless and electroless process for fabricating metal micro/nanostructures by using a nanoindenter and an electroless deposition technique. $2-\mu{m}-deep$ indentation tests on Ni and Cu samples were performed. The elastic recovery of the Ni and Cu was 9.30% and 9.53% of the maximum penetration depth, respectively. The hardness and the elastic modulus were 1.56 GPa and 120 GPa for Ni and 1.49 GPa and 100 GPa for Cu. The effect of single-point diamond machining conditions such as the Berkovich tip orientation (0, 45, and $90^{\circ}$) and the normal load (0.1, 0.3, 0.5, 1, 3, and 5 mN), on both the deformation behavior and the morphology of cutting traces (such as width and depth) was investigated by constant-load scratch tests. The tip orientation had a significant influence on the coefficient of friction, which varied from 0.52-0.66 for Ni and from 0.46-0.61 for Cu. The crisscross-pattern sample showed that the tip orientation strongly affects the surface quality of the machined area during scratching. A selective deposition of Cu at the pit-like defect on a p-type Si(111) surface was also investigated. Preferential deposition of the Cu occurred at the surface defect sites of silicon wafers, indicating that those defect sites act as active sites for the deposition reaction. The shape of the Cu-deposited area was almost the same as that of the residual stress field.

• Polymer(Korea)
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• v.31 no.3
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• pp.184-188
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• 2007

Monodisperse PMMA/HDDA polymer particles were coated via electroless Ni plating using sodium hypophosphite as a reducing agent in an acidic environment. In this study, the effects of 1) the pretreatment conditions, 2) the plating temperature, 3) the plating pH, and 4) the initial pH, control of plating bath on the variation of plating rate, surface state of plated particles and plating reproducibility were investigated. It was observed that every pretreatment steps, especially conditioning and acceleration step, were very important for obtaining uniform Ni plating and the plating rate was increased with the increase of plating temperature and pH. Moreover, the initial pH control of plating bath was critical for the plating reproducibility.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.13-21
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• 1999

Flip chip assembly directly on organic boards offers miniaturization of package size as well as reduction in interconnection distances resulting in a high performance and cost-competitive Packaging method. This paper describes the investigation of alternative low cost flip-chip mounting processes using electroless Ni/Au bump and anisotropic conductive adhesives/films as an interconnection material on organic boards such as FR-4. As bumps for flip chip, electroless Ni/Au plating was performed and characterized in mechanical and metallurgical point of view. Effect of annealing on Ni bump characteristics informed that the formation of crystalline nickel with $Ni_3$P precipitation above $300^{\circ}C$ causes an increase of hardness and an increase of the intrinsic stress resulting in a reliability limitation. As an interconnection material, modified ACFs composed of nickel conductive fillers for electrical conductor and non-conductive inorganic fillers for modification of film properties such as coefficient of thermal expansion(CTE) and tensile strength were formulated for improved electrical and mechanical properties of ACF interconnection. The thermal fatigue life of ACA/F flip chip on organic board limited by the thermal expansion mismatch between the chip and the board could be increased by a modified ACA/F. Three ACF materials with different CTE values were prepared and bonded between Si chip and FR-4 board for the thermal strain measurement using moire interferometry. The thermal strain of ACF interconnection layer induced by temperature excursion of $80^{\circ}C$ was decreased with decreasing CTEs of ACF materials.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.8 s.185
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• pp.171-177
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• 2006

This study was performed as a part of the research on the development of a maskless and electroless process for fabricating metal micro/nanostructures by using a nanoindenter and an electroless deposition technique. $2-{\mu}m$-deep indentation tests on Ni and Cu samples were performed. The elastic recovery of the Ni and Cu was 9.30% and 9.53% of the maximum penetration depth, respectively. The hardness and the elastic modulus were 1.56 GPa and 120 GPa for Ni and 1.51 GPa and 104 GPa for Cu. The effect of single-point diamond machining conditions such as the Berkovich tip orientation (0, 45, and $90^{\circ}$ ) and the normal load (0.1, 0.3, 0.5, 1, 3, and 5 mN), on both the deformation behavior and the morphology of cutting traces (such as width and depth) was investigated by constant-load scratch tests. The tip orientation had a significant influence on the coefficient of friction, which varied from 0.52-0.66 for Ni and from 0.46- 0.61 for Cu. The crisscross-pattern sample showed that the tip orientation strongly affects the surface quality of the machined are a during scratching. A selective deposition of Cu at the pit-like defect on a p-type Si(111) surface was also investigated. Preferential deposition of the Cu occurred at the surface defect sites of silicon wafers, indicating that those defect sites act as active sites for the deposition reaction. The shape of the Cu-deposited area was almost the same as that of the residual stress field.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.2
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• pp.39-44
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• 2020

Recently, numerous researches are being conducted in flexible substrate to apply to wearable devices. Particularly, Conductive substrate researches that can implement the wearable devices on clothing are massive. In this study, we formed fiber substrate spraying CNT and Pd mixed solution on it and plated metal layer with electroless plating. Used SEM equipment and EDS analysis to analysis structure of the plated fiber substrate and discovered Ni layer was created. For check electrical properties, mapping was performed to check surface resistance and distribution of resistance of electroless plated fiber substrate with 4-point probe. It was confirmed that conductivity was improved as the duration of electroless plating was increased, and it was found that distribution of resistance by surface location was uniform. Changes in resistance due to mechanical stress were measured through tensile, bending, and twisting tests. As a result, it was confirmed that resistance change of flexible substrate gradually disappeared as plating time increased. Using UTM (Universal testing machine), it was analyzed mechanical properties of the electroless plated substrate with respect to changes in plating time were improved. In the case of conductive fiber substrate in which electroless plating was performed for 2 hours, tensile strength was increased by 16 MPa than fiber substrate. Based on these results, we found that Ni-CNT-Fabric flexible substrate is adequate for clothing-intergrated conductive substrate and we positively expect that this experiment shows flexible substrate can adapt to and develop not only a wearable device technology but also other fields needing flexibility such as battery, catalyst and solar cell.

• Korean Journal of Materials Research
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• v.18 no.9
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• pp.486-491
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• 2008

The effect of annealing treatment conditions on the interfacial adhesion energy between electrolessplated Ni film and polyimide substrate was evaluated using a $180^{\circ}$ peel test. Measured peel strength values are $26.9{\pm}0.8,\;22.4{\pm}0.8,\;21.9{\pm}1.5,\;23.1{\pm}1.3,\;16.1{\pm}2.0\;and\;14.3{\pm}1.3g/mm$ for annealing treatment times during 0, 1, 3, 5, 10, and 20 hours, respectively, at $200^{\circ}C$ in ambient environment. XPS and AES analysis results on peeled surfaces clearly reveal that the peeling occurs cohesively inside polyimide. This implies a degradation of polyimide structure due to oxygen diffusion through interface between Ni and polyimide, which is also closely related to the decrease in the interfacial adhesion energy due to thermal treatment in ambient conditions.

• Current Photovoltaic Research
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• v.4 no.4
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• pp.140-144
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• 2016

In this paper, core-shell structure of nickel/gold (Ni/Au) conductive layer on poly-methyl-methacrylate (PMMA) micro-ball was fabricated and its conduction property was investigated. Firstly, PMMA micro-ball was synthesized by using dispersion polymerization method. Size of the ball was $2.8{\mu}m$ within ${\pm}7%$ deviation, and appropriate elastic deformation of the PMMA micro-ball ranging from 31 to 39% was achieved under 3 kg pressure. Also, 200 nm thick Ni/Au conductive layer was fabricated on the PMMA micro-ball by uniformly depositing with electroless-plating. Adhesion of the conductive layer was optimized with help of surface pre-treatment, and the layer adhered without peeling-off despite of thermal expansion by collision with accelerated electrons. Composite paste containing core-shell structured particles well cured at low temperature of $130^{\circ}C$ while pressing the test chip onto the substrate to make electrical contact, and electrical resistance of the conductive layer showed stable behavior of about $6.0{\Omega}$. Thus, it was known that core-shell structured particle of the Ni/Au conductive layer on PMMA micro-ball was feasible to flexible electronics.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.88-93
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• 2003

무전해 Ni-P와 Sn의 반응 및 Ni-P의 결정화에 대한 P 함량의 영향을 세 가지 다른 조성의 Ni-P (P 4.6, 9, 13 $wt.\%$)를 이용하여 연구하였다. $300^{\circ}C$까지 열처리한 모든 시편에서 $Ni_3Sn_4$ intermetallic compound (IMC)가 생성되었고 이들 시편을 $450^{\circ}C$까지 열처리한 경우 Sn 두께가 $0.5{\mu}m$로 작을 때 $Ni_3Sn_4$가 모두 $Ni_3Sn_2$로 변화하였다. nanocrystal인 Ni-4.6P는 Ni (111) texture를 유지하며 결정화되었고 Sn과의 반응시 형성되는 $Ni_3Sn_4$ IMC 또한 비정질인 Ni-9P, Ni-13P 경우보다 강한 (111) texture를 가짐이 확인되었다. Ni-P 막의 P 함량이 작은 경우 $Ni_3Sn_4$ IMC는 두껍고 조밀하게 형성되는 반면 P-rich layer 두께는 작아졌다.