• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.9
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• pp.1314-1318
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• 2012

Recently, applications of plasma display to the large public display and transparent display gain much attention. With this background, we report characteristics of opposite electrodes discharge cell with long electrode gap in comparison with conventional co-planar surface discharge. The cell size of test panel is $2950{\mu}m{\times}840{\mu}m$, which corresponds to that of the display having diagonal size of 130" with XGA resolution. Electrode gap of co-planar and opposite electrode structure are $240{\mu}m$ and $500{\mu}m$ respectively. These gap dimensions provide similar driving voltage windows. Experimental results show that opposite discharge provides approximately four fold higher luminous efficacy compared with that of the surface discharge. Resulting efficacy is found to be higher than 19 lm/W in green phosphor with 10 KHz continuous pulse operation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.4
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• pp.372-376
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• 2022

Since the ZnO varistor is a semiconductor device, the internal thermal distribution during the varistor operation is recognized as an important factor in the performance and deterioration of the varistor. For an optimal varistor structure design, the thermal runaway phenomenon during the varistor operation was interpreted using the Comsol 5.2 analysis program by a finite element analysis. The maximum temperature of the center measured in the cross section of the ZnO varistor was confirmed to increase as the temperature moved from the lower electrode to the center towards the upper electrode up to 572.6 K. The electrodes are thinned so that the influence of the Schottky barrier is not great. The heat gradient balance is determined to be improved when the electrode of the hybrid form is introduced. The thickness, density, pore distribution, impurity uniformity, and particle size of the ZnO varistor are required, and it is determined that the pyrolysis gradient will be improved regardless of the electrode thickness. When these results are applied to design the ZnO varistor, the optimal structure of the ZnO varistor can be obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.175-185
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• 2023

A hybrid supercapacitor is a promising energy storage device in view of its excellent capacitive performance. Commercial three-dimensional foam nickel (Ni) can be used as an ideal framework due to an interconnected network structure. However, its application as an electrode material for supercapacitors is limited due to its low specific capacity. Herein, we report a successful growth of MnO₂ on the surface of graphene by a one-step hydrothermal method; thus, forming a three-dimensional MnO₂-graphene-Ni hybrid foam. Our results show that the mixed structure of MnO₂ with nanoflowers and nanorods grown on the graphene/Ni foam as a hybrid electrode delivers the maximum specific capacitance of 193 F·g^-1 at a current density 0.1 A·g^-1. More importantly, the hybrid electrode retains 104% of its initial capacitance after 1,000 charge-discharge cycles at 1 A·g^-1; thus, showing the potential application as a stable supercapacitor electrode.

• Bulletin of the Korean Chemical Society
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• v.19 no.1
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• pp.39-44
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• 1998

$LiCoO_2$ powder was synthesized in an aqueous solution by a sol-gel method and used as a cathode active material for a lithium ion rechargeable battery. The layered $LiCoO_2$ powders were prepared by igniting in air for 12 hrs at 600 ℃ $(600-LiCoO_2)$ and 850 ℃ $(850-LiCoO_2)$. The structure of the $LiCoO_2$ powder was assigned to the space group R bar 3 m (lattice parameters a=2.814 Å and c=14.04Å). The SEM pictures of $600-LiCoO_2$ revealed homogeneous and fine particles of about 1 μm in diameter. Cyclic voltammograms (CVs) of $600-LiCoO_2$ electrode displayed a set of redox peaks at 3.80/4.05 V due to the intercalation/deintercalation of the lithium ions into/out of the $LiCoO_2$ structure. CVs for the $850-LiCoO_2$ electrode had a major set of redox peaks at 3.88/4.13 V, and two small set of redox peaks at 4.18/4.42 V and 4.05/4.25 V due to phase transitions. The initial charge-discharge capacity was 156-132 mAh/g for the $600-LiCoO_2$ electrode and 158-131 mAh/g for the $850-LiCoO_2$ electrode at the current density of 0.2 mA/cm2. The cycleability of the cell consisting of the $600-LiCoO_2$ electrode was better than that of the $850-LiCoO_2$. The diffusion coefficient of the $Li^+$ ion in the $600-LiCoO_2$ electrode was calculated as $4.6{\times}10^{-8}\; cm^2/sec$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.520-525
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• 2000

Glucose oxidase was immobilized in polypyrrole by electrosynthesis. The enzyme had an influence on the redox properties of a complex enzyme electrode. In the cyclic voltammograms of the enazyme electrode new peaks were appeared at the potential around 0.7V vs. Ag/AgCl in additional to the typical peaks for polypyrrole. The more immobilized the stronger the peaks became. During the cycling the pH of electrolyte solution was decreased to about 4.4 The reason for that is to be the proton released from the carboxyl in the glucose oxidase in order to keep on a charge neutrality of the oxidized enzyme. This fact suggests that the new peaks in the voltammograms are caused by the redox of glucose oxidase. In the AC impedance spectrum analysis of the electrode the diffusion of electrolyte anion was limited because of chained structure of the enzyme. The faradic impedance was large since the glucose oxidase is an insulator. Therefore when glucose oxidase is entrapped the enzyme should be limited in amount. Because the growth of the polypyrrole is accompanied both charge transfer and mass transport. For the traditional electrosynthesis that means amount of enzyme present in the electrode is limited to as much as film growable.

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.74-77
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• 2000

Ta-doped PZT thin films prepared by reactive co-sputtering method could be transformed into single grained perovskite structure utilizing physical etching of Pt bottom electrode. It is found that PZT perovskite phase on damaged (111) Pt electrode by IMD was more easily crystallized than random oriented Pt electrode and less crystallized than (111) Pt electrode. This shows that amorphized Pt electrode surface by IMD process has an effect on crystallization of PZT perovskite phase. 40$\mu\textrm{m}\times40\mu\textrm{m}$ square shape single grain PZT array could be obtained utilizing the difference of incubation time for nucleation of rosettes between ion damaged Pt and (111) oriented Pt electrode. Single grained PZT thin films show low leakage current density of $1\times10^{-7}$ A/$\textrm{cm}^2$ and high break down field of 440kV/cm. The loss of remanent polarization after $10^{11}$ cycles was less than 15% of initial value.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1016-1021
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• 2002

Luminescent characteristics of FLs were studied according to the structure of electrode for LCD backlight applications. The luminance and luminous efficiency of the FLs fabricated under same conditions were measured and evaluated as functions of magnitude of applied voltage and widths of external electrode. The luminance and luminous efficiency of CCFL at 12 V were 27600 cd/$m^2$ and 35.3 lm/w, respectively The luminance of EEFLS increased as the widths of external electrode increased, and the luminous efficiency of EEFLS showed to increase to 20 mm of electrode width) and to decrease at wider than 20 m of electrode widths. The luminance and luminous efficiency of EEFL with 20 mm of electrode widths were 21600 cd/$m^2$ and 26500 cd/$m^2$, 35.6 lm/w and 34.8 lm/w at 12 V, 14 V, respectively.

• Korean Journal of Materials Research
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• v.30 no.11
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• pp.595-600
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• 2020

The photovoltaic properties of perovskite solar cells (PSCs) with a carbon electrode fabricated using different annealing processes are investigated. Perovskite formation (50 ℃, 60 min) using a hot-plate and an oven is carried out on cells with a glass/fluorine doped TiO₂/TiO₂/ZrO₂/carbon structure, and the photovoltaic properties of the PSCs are analyzed using a solar simulator. The microstructures of the PSCs are characterized using an optical microscope, a field emission scanning electron microscope, and an electron probe micro-analyzer (EPMA). Photovoltaic analysis shows that the energy conversion efficiency of the samples fabricated using the hot-plate and the oven processes are 2.08% and 6.90%, respectively. Based on the microstructure of the samples and the results of the EPMA, perovskite is formed locally on the carbon electrode surface as the γ-butyrolactone (GBL) solvent evaporates and moves to the top of the carbon electrode due to heat from the bottom of the sample during the hot plate process. When the oven process is used, perovskite forms evenly inside the carbon electrode, as the GBL solvent evaporates extremely slowly because heat is supplied from all directions. The importance of the even formation of perovskite inside the carbon electrode is emphasized, and the feasibility of oven annealing is confirmed for PSCs with carbon electrodes.

• Journal of information and communication convergence engineering
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• v.5 no.1
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• pp.42-44
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• 2007

The a-Si:H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si:H TFTs is inverted staggered. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr) $1500{\AA}$ under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these, thin films is formed with a-SiN:H ($2000{\mu}m$), a-Si:H($2000{\mu}m$) and $n^+a-Si:H$ ($500{\mu}m$). We have deposited $n^+a-Si:H$, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the $n^+a-Si:H$ layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFTs decreasing parasitic capacitance of source-drain show drain current of $8{\mu}A$ at 20 gate voltages, $I_{on}/I_{off}$ ratio of ${\sim}10^8$ and $V_{th}$ of 4 volts.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.7-12
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• 2009

TFT-LCD is the most popular type of flat display panel in the information technology field. The back light unit is a main part of the structure of a TFT-LCD panel. Occasionally, studies have shown that failures of the CCFL of the BLU occur due to the poor weld characteristics of these materials. The aim of this study was to prepare some technical data and to characterize a microjoined electrode for the CCFL. Microstructure examinations, microhardness measurements, resistance measurements and microtensile tests of the microjoined electrode were carried out. The result indicates that a large amount of grain coarsening exists in the heat-affected zone (HAZ) of the weld between the cup and the pin. This grain coarsening of the HAZ between the cup and pin is caused by the welding cycle, which may have an influence on the lowest microhardness values. Fracturing of the microjoined electrode also occurred at the HAZ close to the cup between the weld holding the cup and the pin. Additionally, no specific changes of the electrical resistance among the cup, pin, and lead wire themselves or in the microjoined electrode were observed.